1-V电源65nm GP CMOS工艺下一款十位80MS/s 1.6mW逐次逼近型模数转换器

This paper presents a 10-bit 80-MS/s successive approximation register(SAR) analog-to-digital converter (ADC) suitable for integration in a system on a chip(SoC).By using the top-plate-sample switching scheme and a split capacitive array structure,the total capacitance is dramatically reduced which leads to low power and high speed.Since the split structure makes the capacitive array highly sensitive to parasitic capacitance,a three-row layout method is applied to the layout design.To overcome the charge leakage in the nanometer process,a special input stage is proposed in the comparator.As 80 MS/s sampling rate for a 10-bit SAR ADC results in around 1 GHz logic control clock,and a tunable clock generator is implemented.The prototype was fabricated in 65 nm 1P9M (one-poly-nine-metal) GP(general purpose) CMOS technology.Measurement results show a peak signal-to-noise and distortion ratio(SINAD) of 48.3 dB and 1.6 mW total power consumption with a figure of merit(FOM) of 94.8 fJ/conversion-step.     

一种用于逐次逼近ADC的高能效高线性度开关电容时序

提出了一种用于逐次逼近模数转换器的高能效高线性度开关电容时序。相较于典型的基于V_CM的开关原理,该开关时序可减少37%的开关能量,并具有更高的线性度。该开关时序已应用于1V,10位300kS/s的SAR ADC,并在0.18μm标准CMOS工艺下成功流片。测试结果表明,在1V电源电压下,此SAR ADC的SNDR为55.48dB,SFDR为66.98dB,功耗为2.13μW,品质因数到达14.66fJ/c-s。DNL和INL分别为0.52/-0.47 LSB和0.72/-0.79 LSB,并且与静态非线性模型一致,最大INL出现在 V_FS/4处和3V_FS/4处。     

一种基于时域比较器高SFDR的6-bit 20-MS/s 逐次逼近模数转换器

This paper presents a 6-bit 20-MS/s high spurious-free dynamic range(SFDR) and low power successive approximation register analog to digital converter(SAR ADC) for the radio-frequency(RF) transceiver frontend, especially for wireless sensor network(WSN) applications.This ADC adopts the modified common-centroid symmetry layout and the successive approximation register reset circuit to improve the linearity and dynamic range. Prototyped in a 0.18-μm 1P6M CMOS technology,the ADC performs a peak SFDR of 55.32 dB and effective number of bits(ENOB) of 5.1 bit for 10 MS/s.At the sample rate of 20 MS/s and the Nyquist input frequency,the 47.39-dB SFDR and 4.6-ENOB are achieved.The differential nonlinearity(DNL) is less than 0.83 LSB and the integral nonlinearity(INL) is less than 0.82 LSB.The experimental results indicate that this SAR ADC consumes a total of 522μW power and occupies 0.98 mm~2.     

A 10-bit 2.5-MS/s SAR ADC with 60.46 dB SNDR in 0.13-μm CMOS technology

This paper presents a 10-bit 2.5-MS/s successive-approximation-register (SAR) analog- to-digital-converter (ADC) design for micro controller unit of signal process system. Because of the proposed new segmented architecture of 7 MSBs-plus-3 LSBs capacitor–resistor hybrid digital-to-analog-converter using a thermometer decoder for the most significant 5 MSBs, this design achieves superior static nonlinearity and dynamic performance of SNDR, SFDR. Utilizing the proposed deviation calibration technique, the discharging and charging via substrate resulting from deviation of the comparator’s common-mode voltage is cancelled. The ADC is fabricated in a standard 1P5M 0.13-μm CMOS technology. The peak DNL and INL are +0.18/?0.20-LSB, +0.30/?0.25 LSB respectively while the ENOB is 9.52-bit around all process–voltage–temperature corner analysis. At a 2.3-V supply voltage and a 2.5-MS/s sampling rate, the ADC achieves a SNDR of 60.46 dB, SFDR of 75.32 dB while the power dissipation is 0.191-mW, that resulting in a figure of merit of 98.45 fJ/c-s. The die of ADC measures 0.51 × 0.20 mm² resulting in area efficiency of 122.6 μm²/code and compared with the benchmark SAR ADCs, this work is the most area efficient design.     

A digital calibration technique for an ultra high-speed wide-bandwidth folding and interpolating analog-to-digital converter in 0.18-μm CMOS technology

A digital calibration technique for an ultra high-speed folding and interpolating analog-to-digital converter in 0.18-μm CMOS technology is presented.The similar digital calibration techniques are taken for high 3-bit flash converter and low 5-bit folding and interpolating converter,which are based on well-designed calibration reference, calibration DAC and comparators.The spice simulation and the measured results show the ADC produces 5.9 ENOB with calibration disabled and 7.2 ENOB with calibration enabled for high-frequency wide-bandwidth analog input.     

一种基于电阻型数模转换器每级输出3位的6-bit 410-MS/s单通道异步逐次逼近模数转换器

该设计采用SMIC 65-nm CMOS工艺,实现了一款可应用于超宽带通信领域的单通道低功耗6位410-MS/s异步逐次逼近模数转换器(SAR ADC)。通过采用电阻型数模转换器、每级输出3位数字码字结构,以及改进的异步控制逻辑,该ADC在370-MS/s采样率时,无杂散动态范围(SFDR)达到41.95-dB,信号噪声失真比(SNDR)达到28.52-dB。在采样率为410MS/s时,该设计仍能达到40.71-dB的SFDR和30.02-dB的SNDR。通过动态比较器的使用,实现了低功耗设计。测试结果表明,在410-MS/s采样率下,电路总功耗为2.03mW,对应的品质因子(FOM)为189.17fJ/step。     

A 1.2-V 19.2-mW 10-bit 30-MS/s pipelined ADC in 0.13-μm CMOS

A 10-bit 30-MS/s pipelined analog-to-digital converter(ADC) is presented.For the sake of lower power and area,the pipelined stages are scaled in current and area,and op amps are shared between the successive stages. The ADC is realized in the 0.13-μm 1-poly 8-copper mixed signal CMOS process operating at 1.2-V supply voltage. Design approaches are discussed to overcome the challenges associated with this choice of process and supply voltage, such as limited dynamic range,poor analog characteristic device...     

A 1 V 186-μW 50-MS/s 10-bit subrange SAR ADC in 130-nm CMOS process

This paper presents a 10-bit 50-MS/s subrange successive-approximation register (SAR) analog-to-digital converter (ADC) composed of a 4-bit SAR coarse ADC and a 6-bit SAR fine ADC. In the coarse ADC, multi-comparator SAR architecture is used to reduce the digital logic propagation delay, and a traditional asynchronous SAR ADC with monotonic switching method is used as the fine ADC. With that combination, power dissipation also can be much reduced. Meanwhile, a modified SAR control logic is adopted in the fine ADC to speed up the conversion and other techniques, such as splitting capacitors array, are borrowed to reduce the power consumption. Fabricated with 1P8M 130-nm CMOS technology, the proposed SAR ADC achieves 51.6-dB signal to noise and distortion ratio (SNDR) and consumes 186 μ W at 50 MS/s with a 1-V supply, resulting in a figure of merit (FOM) of 12 fJ/conversion-step. The core area is only 0.045 mm².     

A 1.1-mW 10-bit 50-MSample/s hybrid two-step ADC in 0.13-µm CMOS technology

This paper presents a hybrid two-step analog-to-digital converter (ADC) that employs a successive approximation register (SAR) ADC and a time-to-digital converter (TDC)-based ADC as coarse and fine converters, respectively. By exploiting the respective advantages of the SAR and TDC architectures, the two-step ADC is realized without a high-gain amplifier for high linearity of a multiplying digital-to-analog converter. Thus, the proposed architecture can implement a low-power ADC without compromising operational speed. In addition, two digital error corrections are used to compensate for TDC error and the final ADC output, respectively. A 10-bit 50 MS/s ADC is fabricated in a 0.13-μm complementary metal–oxide–semiconductor process and occupies a 0.12-mm² die area. Furthermore, it consumes only 1.1 mW and achieves a signal-to-noise distortion ratio and spurious-free dynamic range of 53.67 and 60 dB, respectively, resulting in a 53.7 fJ/conversion-step at a 25-MHz full-scale input.     

A low power high gain UWB LNA in 0.18-μm CMOS

A low power high gain differential UWB low noise amplifier (LNA) operating at 3-5 GHz is presented.A common gate input stage is used for wideband input matching; capacitor cross coupling (CCC) and current reuse techniques are combined to achieve high gain under low power consumption. The prototypes fabricated in 0.18-μm CMOS achieve a peak power gain of 17.5 dB with a -3 dB bandwidth of 2.8-5 GHz, a measured minimum noise figure (NF) of 3.35 dB and -12.6 dBm input-referred compression point at 5 GHz, while drawing 4.4 mA from a 1.8 V supply. The peak power gain is 14 dB under a 4.5 mW power consumption (3 mA from a 1.5 V supply). The proposed differential LNA occupies an area of 1.01 mm~2 including test pads.     

A 1.2-V, 84-dB Σ△ ADM in 0.18-μm digital CMOS technology

A low power and low voltage∑△analog-to-digital modulator is realized with digital CMOS technology, which is due to full compensated depletion mode capacitors.Compared with mixed signal technology,this type of modulator is more compatible for pure digital applications.A pseudo-two-stage class-AB OTA is used in switchedcapacitor integrators for low voltage and low power.The modulator is realized in standard SMIC 0.18μm 1P6M digital CMOS technology.Measured results show that with 1.2 V supply voltage and a 6 MHz sample clock,the dynamic range of the modulator is 84 dB and the total power dissipation is 2460μW.     

A 1.4-V 25-mW 600-MS/s 6-bit folding and interpolating ADC in 0.13-μm CMOS

A 600-MSample/s 6-bit folding and interpolating analog-to-digital converter(ADC) is presented.This ADC with single track-and-hold(T/H) circuits is based on cascaded folding amplifiers and input-connection-improved active interpolating amplifiers.The prototype ADC achieves 5.55 bits of the effective number of bits(ENOB) and 47.84 dB of the spurious free dynamic range(SFDR) at 10-MHz input and 4.3 bit of ENOB and 35.65 dB of SFDR at 200-MHz input with a 500 MS/s sampling rate;it achieves 5.48 bit of ENOB a...     

A 1.4-V 25-Mw 600-MS/s 6-bit folding and interpolating ADC in 0.13-μm CMOS

A 600-MSample/s 6-bit folding and interpolating analog-to-digital converter (ADC) is presented. This ADC with single track-and-hold (T/H) circuits is based on cascaded folding amplifiers and input-connection-improved active interpolating amplifiers. The prototype ADC achieves 5.55 bits of the effective number of bits (ENOB) and 47.84 dB of the spurious free dynamic range (SFDR) at 10-MHz input and 4.3 bit of ENOB and 35.65 dB of SFDR at 200-MHz input with a 500 MS/s sampling rate; it achieves 5.48 bit of ENOB and 43.52 dB of SFDR at 1-MHz input and 4.66 bit of ENOB and 39.56 dB of SFDR at 30. 1-MHz input with a 600-MS/s sampling rate. This ADC has a total power consumption of 25 mW from a 1.4 V supply voltage and occupies 0.17 mm~2 in the 0.13-μm CMOS process.     

A 30-mW 8-b 125-MS/s pipelined ADC in 0.13-μm CMOS

An 8-b pipelined ADC constructed in 0.13-μm CMOS is described. This ADC uses a dual-supply technique to yield 8-b performance at a sampling rate of 125 MS/s while consuming 30 mW from 1.8-V and 1.2-V supplies. Active area is 0.4 mm². Numerous challenges associated with this choice of process technology were overcome, such as limited dynamic range, copper metallization and the effects of gate oxide leakage.     

A 1-GS/s 6-bit folding and interpolating ADC in 0.13-μm CMOS

A 1-GS/s 6-bit two-channel time-interleaved folding and interpolating analog-to-digital converter (ADC) is presented in this article. For low voltage applications, input-connection-improved active interpolating amplifiers and cascaded folding amplifiers have been applied. A single front-end track-and-hold (T/H) circuit is used to avoid the sampling-time mismatches between the channels. When supplied with 1.4 V, the circuit achieves signal-to-noise-plus-distortion ratio (SNDR) of 30.74 dB and spurious free dynamic range (SFDR) of 36.91 dB and consumes a power of 66 mW with 500-MHz input and 1-GS/s sampling rate. Differential nonlinearity (DNL) and integral nonlinearity (INL) are 0.57 and 0.81 LSB, respectively. The figure of merit (FoM) is 1.75 pJ/conversionstep. The ADC circuit is prototyped in 0.13-μm CMOS process and occupies a core area of 0.45 mm².     

A 6.25 Gb/s equalizer in 0.18μm CMOS technology for high-speed SerDes

This paper presents a 0.18μm CMOS 6.25 Gb/s equalizer for high speed backplane communication. The proposed equalizer is a combined one consisting of a one-tap feed-forward equalizer （FFE） and a two-tap half-rate decision feedback equalizer （DFE） in order to cancel both pre-cursor and post-cursor ISI. By employing an active-inductive peaking circuit for the delay line, the bandwidth of the FFE is increased and the area cost is minimized. CML-based circuits such as DFFs, summers and multiplexes all help to improve the speed of DFEs. Measurement results illustrate that the equalizer operates well when equalizing 6.25 Gb/s data is passed over a 30-inch channel with a loss of 22 dB and consumes 55.8 mW with the supply voltage of 1.8 V. The overall chip area including pads is 0.3 × 0.5 mm^2.