Dielectric confinement on exciton binding energy and nonlinear optical properties in a strained Zn1-xinMgxinSe/Zn1-xoutMgxoutSe quantum well

The band offsets for a Zn1-xinMgxin Se/Zn1-xoutMgxout Se quantum well heterostructure are determined using the model solid theory.The heavy hole exciton binding energies are investigated with various M...     

Optical Gain of V—groove Zn1—xCdxSe／ZnSe Quantum Wires

The subband structures, distributions of electron and hole wave functions, state density, optical gain spectra, and transparency carrier density of the V-groove Zn 1-x Cd x Se/ZnSe quantum wires are investigated theoretically using four band effective-mass Hamiltonian, which takes into account the effects of the valence band anisotropy and the band mixing. The biaxial strain effect for quantum wires is included in the calculation. The compressive strain in the Zn 1-x Cd x Se wire region increases the energy separation between the uppermost subbands. The optical gain with xy -polarized light is enhanced, while optical gain with z -polarized light is strongly decreased. The xy -polarized optical gain spectrum has a peak at around 2.541 eV, with the transparency carrier density of 0.75×10 18 cm -3 . The calculated results also show that the strain tends to increase the quantum confinement and enhance the anisotropy of the optical transitions.     

Effect of a magnetic field on the energy levels of donor impurities in the ZnO parabolic quantum well

Energy levels of a donor impurity in the ZnO parabolic quantum well under the magnetic field are investigated using the variational method.The binding energy of the ground state,the energies of 2p±state and 1 s→2p±transition energies of a hydrogenic donor in the ZnO parabolic quantum well are numerically calculated as a function of the strength of magnetic field for different parabolic potential fields.The results show that the external magnetic field has an obvious influence on the binding energies and the 1 s→2p±transition energies of a hydrogenic donor.The Is to 2p±transition energy increases linearly with the strength of magnetic field,but the Is to 2p_ transition energy decreases when the strength of magnetic field increases for the small field strength. Compared to the GaAs parabolic well,the donors are more tightly bound to the ZnO parabolic well and the influence of external magnetic field on the binding energy of a donor is much stronger in the ZnO parabolic well.     

Zone-center optical phonons in wurtzite InAlN crystal

An experimental study of the optical phonons is presented for InAlN epilayers lattice-matched with GaN by means of Raman scattering,and theoretical simulations are done to investigate the zone-center optical phonons of InAlN alloy by using the modified random element isodisplacement(MREI)model.The calculated findings show that the LO and TO branches of InAlN crystal both exhibit nonlinear properties.A comparison is made between the theoretical results and the experimental data,and it shows that they are both consistent for the A 1 (LO)phonons of InAlN epilayers.     

Quantum entanglement in a system of Bose-Einstein condensate interacting with Schrdinger cat state

Under the condition of resonance,the entanglement of field-atom is investigated using the quantum reduced entropy.The effects of the initial field intensity,the interaction intensity between the optical field and atoms and that among BoseEinstein condensate(BEC) atoms on the evolution of the quantum entanglement are discussed.The results indicate that when the strength of the light field is strong enough,the system of the Schr¨odinger cat state optical field interacting with BEC atoms is always at the entan...     

应变纤锌矿ZnO/MgxZn1-xO量子点中离子施主束缚激子的光学性质

Within the framework of the effective-mass approximation and the dipole approximation, considering the three-dimensional confinement of the electron and hole and the strong built-in electric field(BEF) in strained wurtzite Zn O/Mg0:25Zn0:75O quantum dots(QDs), the optical properties of ionized donor-bound excitons(D+, X)are investigated theoretically using a variational method. The computations are performed in the case of finite band offset. Numerical results indicate that the optical properties of(D+, X) complexes sensitively depend on the donor position, the QD size and the BEF. The binding energy of(D+, X) complexes is larger when the donor is located in the vicinity of the left interface of the QDs, and it decreases with increasing QD size. The oscillator strength reduces with an increase in the dot height and increases with an increase in the dot radius. Furthermore, when the QD size decreases, the absorption peak intensity shows a marked increment, and the absorption coefficient peak has a blueshift. The strong BEF causes a redshift of the absorption coefficient peak and causes the absorption peak intensity to decrease remarkably. The physical reasons for these relationships have been analyzed in depth.     

Magneto-polaron induced intersubband optical transition in a wide band gap Ⅱ–Ⅵ semiconductor quantum dot

Effects of LO-phonon contribution on the electronic and the optical properties are investigated in a Cd0:8Zn0:2Se/ZnSe quantum dot in the presence of magnetic field strength. The magneto-polaron induced hydrogenic binding energy as a function of dot radius in the wide band gap quantum dot is calculated. The oscillator strength and the spontaneous lifetime are studied taking into account the spatial confinement, magnetic field strength and the phonon contribution. Numerical calculations are carried out using variational formulism within the single band effective mass approximation. The optical properties are computed with the compact density matrix method. The magneto-polaron induced optical gain as a function of photon energy is observed. The results show that the optical telecommunication wavelength in the fiber optic communications can be achieved using CdSe/ZnSe semiconductors and it can be tuned with the proper applications of external perturbations.     

Effective mass of the ground state of the strong-coupling exciton in a quantum well

The properties of the effective mass of the ground state of the exciton, for which the electron (hole) is strongly coupled with interface-optical (IO) phonons but weakly coupled with bulk-longitudinal-optical (LO) phonons in a quantum well, are studied by means of Tokuda’s improved linear combination operator and a modified second Lee-Low-Pines transformation method. The results indicate that the contributions of the interaction between the electron (hole) and the different phonon branches to the effective ...     

Nonlinear Optical Response of Conjugated Polymer to Electric Field

The organic π-conjugated polymers are of major interest materials for the use in electro-optical and nonlinear optical devices. In this work, for a selected polyacetylene chain, the optical absorption spectra in UV/Vis regime as well as the linear polarizabilitiy and nonlinear hyperpolarizability are calculated by using quantum chemical ab initio and semiempirical methods. The relationship of its optical property to electric field is obtained. Some physical mechanism of electric field effect on molecular optical property is discussed by means of electron distribution and intramolecular charge transfer.     

Optical Gain of V-groove Zn1-xCdxSe/ZnSe Quantum Wires

The subband structures, distributions of electron and hole wave functions, state density, optical gain spectra, and transparency carrier density of the V-groove Zn1-xCdxSe/ZnSe quantum wires are investigated theoretically using four band effective-mass Hamiltonian, which takes into account the effects of the valence band anisotropy and the band mixing. The biaxial strain effect for quantum wires is included in the calculation. The compressive strain in the Zn1-xCdxSe wire region increases the energy separation between the uppermost subbands. The optical gain with xy-polarized light is enhanced, while optical gain with z-polarized light is strongly decreased. The xy-polarized optical gain spectrum has a peak at around 2.541 Ev, with the transparency carrier density of 0.75×1018　cm-3. The calculated results also show that the strain tends to increase the quantum confinement and enhance the anisotropy of the optical transitions.     

Correlation between dark current RTS noise and defects for AIGalnP multiple-quantum-well laser diode

The correlation model between dark current RTS noise and defects for A1GalnP multiple-quantum-well laser diode is derived. Experimental results show that dark current RTS noise caused carrier number fluctuations at the interface of the heterojunction in the active region. According to this correlation model, the defect types are determined, and the defects＇ energy levels are quantitatively determined. The comer frequency of RTS noise power spectral density is analyzed. The experimental results are in good agreement with the theoretical. This result provided an effective method for estimating the deep-level traps in the active region of A1GaInP multiple quantum well laser diode.     

Tris（8—Hydroxyquinoline）Aluminum／2—（4—Biphenylyl）—5—（4—Tertbutylphenyl）—1,3,3—O—xadiazole Organic Multiple Quantum Wells for Electroluminescent Devices

Organic multiple quantum wells(OMQWs) consisting of alternating layers of organic materials have been fabricated from tris(8-hdroxyquinoline) aluminum(Alq)and 2-(4-biphenylyl)-5-(4-tertbutylphenyl)-1,3,3-oxadiazole(PBD)by a multisource-type high-vacuum organic molecular deposition.From the small-angle X-ray diffraction patterns of Alq/PBD OMQWs,a periodically layered structure is confirmed through the entire stack.The Alq layer thickness in the OMQWs was varied from 1 nm to 4 nm.From the optical aborption, photoluminescence and electroluminescence measurements,it is found that the exciton energy shifts to higher energy with decreasing Alq layer thickness,The changes of the exciton energy could be interpreted as the confinement effects of exciton in the Alq thin layers.Narrowing of the emission spectrum has also been observed for the electroluminescent devices(ELDs)with the OMQWs structure at room temperature.     

Investigation of Mach-Zehnder interferometer properties based on PLC technology

We report investigations of three types of silica-based thermo-optic modulating Mach-Zehnder interferometers (MZIs). They are widely used in optical communication and quantum photonics. Three types of MZIs are fabricated. The waveguide structure and fabrication process are paid special attention. The power consumption is less than 250 mW for all MZIs. The polarization dependent loss (PDL) at the same attenuation using the upper heater is less than that using the lower heater for the three types of MZIs. In addition, it is found that the PDL at the same attenuation increases gradually for π, 2π and 0 phase differences. The measured response time of the three types of MZIs is less than 1.8 ms.     

Linear and Nonlinear Optical Absorptions in Semiparabolic Quantum Wells

By using the compact density matrix approach and iterative procedure, a detailed procedure for the calculation of the linear and nonlinear optical absorption coefficients was given in the electric-field-biased semi parabolic quantum wells(QWs). The simple analytical formulas for the linear and nonlinear optical absorption coefficients in the systems are also deduced. Numerical result on typical GaAs materials shows that,the linear and nonlinear optical absorption coefficients sensitively depend on the applied electric field and the confined potential frequency of the semiparabolic QWs systems as well as the incident optics beam intensity.     

Electrically driven uniaxial stress device for tuning in situ semiconductor quantum dot symmetry and exciton emission in cryostat

Uniaxial stress is a powerful tool for tuning exciton emitting wavelength, polarization, fine-structure splitting (FSS), and the symmetry of quantum dots (QDs). Here, we present a technique for applying uniaxial stress, which enables us in situ to tune exciton optical properties at low temperature down to 15 K with high tuning precision. The design and operation of the device are described in detail. This technique provides a simple and convenient approach to tune QD structural symmetry, exciton energy and biexciton binding energy. It can be utilized for generating entangled and indistinguishable photons. Moreover, this device can be employed for tuning optical properties of thin film materials at low temperature.     

Energy transfer in organic multilayer quantum well structure and its application to OLEDs

We fabricate a series of samples and OLEDs with organic multilayer quantum well structure, which consist of alternate PBD and Alq3. Both PBD and Alq3 are electron-transporting materials, and PBD is used as potential barrier layer, while Alq3 is used as potential well layer and emitting layer. Compared with double-layer structure, the luminescent characteris- tics of organic samples and diodes with quantum well structure are investigated and the quantum well structure helps the energy transfer between well layer and barrier layer. The quantum well structure makes carriers disperse in the different well layers and then increases the number of excitons to enhance the efficiency of the recombination.     

Effect of p-d exchange with an itinerant carrier in a GaMnAs quantum dot

Hydrogenic acceptor binding energy as a function of dot radius in a GaMnAs/Ga_0.6Al_0.4As quantum dot is calculated including the exchange interaction of Mn alloy content with an itinerant carrier.Calculations are performed by varying its dot radius,for various Mn alloy contents in GaMnAs quantum dot within a single band effective mass approximation using variational method.The spin polaronic energy of the acceptor impurity for different Mn²⁺ is evaluated for different dot radii using a mean field theory in the presence of magnetic field strength.The magnetization is computed in the influence of magnetic field and the Mn ions.The effective g-factor of the valence band electron with the inclusion of effects of Mn ion impurities is found in the influence of the magnetic field.The exchange coupling constant is calculated for various magnetic field strengths.The results show that the p-d exchange interaction in the GaMnAs/Ga_0.6Al_0.4As quantum dot has a strong dependence on spatial confinement,effect of magnetic field strength and the Mn alloy content.Our results are in good agreement with the other investigators.     

Thermal and Transmission Properties of UV Nonlinear Optical Material—ZnCd（SCN）4 Crystal

Zinc cadmium thiocyanate(ZCTC),ZnCd(SCN)4, has been discovered as a UV second-order nonlinear optical coorination crystal.Its thermal and transmission properties are reported.The thermal decomposition is characterized by using the X-ray powder diffraction (XRPD) and infared (IR) spectroscopy at roon temperature.The absorptions of intrinsic ions and ZCTC in a solution state are discussed as well as transmission properties of the ZCTC crystal.An effective method of reducing the surface reflection loss of ZCTC crystal is introduced.     

Optically Powered Pressure Sensor with Optical Fiber Link

An optically powered sensor for measuring pressure which is linked by optical fiber is developed in new scheme.Its pulse positio modulation(PPM)optical signal and op-tical supply power for electronics in probe are transmitted via a single optical fiber.The opti-cal power is carried by a 1300nm laser diode(LD)and the sensing data are carried by a 850nm LED.The remote ptobe uses all CMOS chips and particular modulations(PPM and PWM).Its electrical consumption including signal manipulation and LED driven current from optically converted is less than 100μW.The laser diode supplies 5mW optical power into fhe fiber.A Photodetector converts suffichently this power into electrical power to drive the whole probe operation.The optically powered distance gets up to 500m.The novel sen-sor combines optical fiber and electronies technology into a system.Because of using the prin-ciple of ratio measurement between measured and reference signals.as well as light feedback,the system is available with high reliab,outstanding accuracy and repeatability.     

Substrates and interlayer coupling effects on Mo1-xWxSe2 alloys

Two-dimensional(2D) transition metal dichalcogenides alloys are potential materials in the application of photodetectors over a wide spectral range due to their composition-dependent bandgaps. The study of bandgap engineering is important for the application of 2D materials in devices. Here, we grow the Mo1-xWxSe2 alloys on mica, sapphire and SiO2/Si substrates by chemical vapor deposition(CVD) method. Mo1-x Wx Se2 alloys are grown on the mica substrates by CVD method for the first time. Photoluminescence(PL) spectroscopy is used to investigate the effects of substrates and interlayer coupling force on the optical bandgaps of as-grown Mo1-xWxSe2 alloys. We find that the substrates used in this work have an ignorable effect on the optical bandgaps of as-grown Mo1-xWxSe2. The interlayer coupling effect on the optical bandgaps of as-grown Mo1-xWxSe2 is larger than the substrates effect. These findings provide a new way for the future study of the growth and physical properties of 2D alloy materials.