双层盾构公路隧道内线缆布设方法研究及应用

盾构隧道受空间布局的限制,对于机电系统种类繁多的光电缆如何合理综合布设,一直是值得关注的热点.文章通过对南京纬三路过江通道项目线缆布设方法的探讨和应用,总结出典型双层公路盾构隧道内线缆合理布设的方法,可供类似盾构隧道以及管廊等有空间局限性的项目借鉴.     

单总线技术在航空相机温控系统中的应用

航空成像设备通常需要对温度敏感区进行分区控制。以往的温度传感器多采用热敏电阻,它易损坏,长时间使用后需重新标定,狭小空间下的多传感器布线非常复杂,保证模拟信号远距离测量的精度在技术实现上也比较困难。提出了采用一种基于单总线技术的新型数字温度传感器DS18820U的测温系统。实验结果表明,基于DS18820U的单总线传感器网络具有测量精度高,测温范围宽,布线少,无需标定等特点,特别适合航空成像设备在空间受限,多传感器远距离布线特点下的温度组网测量。     

舰载无人机光电任务载荷试验方法研究

根据舰载无人机光电任务载荷的组成形式,探讨了光学载荷、红外载荷和激光雷达等任务传感器的性能指标.考虑到复杂海面大气条件下光电传感器受环境条件影响显著的特点,设计了舰载无人机光电任务载荷的外场试验方案,包括沿海试验阵地布设、静态和动态试验程序设计以及后期试验数据处理等.     

数码相机电源管理的单芯片方案

电问题是数码相机设计者 必须面对的难题之一。数码相机中包含有光电成像元件（ＣＣＤ或ＣＭＯＳ传感器）及其驱动电路、高密度模拟及逻辑电路、ＬＣＤ显示及背光驱动电路等,这些部件的供电要求各不相同,往往需要很多组各不相同的供电电压及偏置电压,而为整个系统提供电力的只能是一个简单的电池组。电池组的输出电压单一而且会在一定范围内变动,无法直接为系统内各部分电路供电,往往需要通过各种电源管理电路进行功率变换,转换到系统所需的各种工作电压。另一方面,数码相机内的空间十分狭小,留给电源管理电路的空间非常有限,这就…     

车载电子设备方舱布线工艺

布线工艺对电子设备方舱电气性能有着重要的影响,针对布线所要考虑的走线轨迹、电缆长度和电缆布设绑扎防护问题,结合工程实践提出了电缆布设"定长定轨"工艺设计方法,并介绍了电缆布设绑扎防护工艺,改变了传统的布线生产工艺方式电缆制作的滞后性,有效提高了布线施工效率和布线质量。     

基于数字化布线模型和工艺的电装总装实施

三维(3D)布线技术是结构工艺数字化样机设计及应用的重要组成部分.文中运用3D布线设计和3D工艺设计技术进行雷达产品线缆布线模型设计和工艺设计.依据3D布线模型和3D布线工艺开展布线装配实施,将雷达产品基于实物的电装生产方式转换成为基于模型的总装生产模式,达到精准、快速生产的目的 .     

基础设施不可等闲视之——泛达统一物理基础设施数据网络构建策略白皮书（下）

布线的潜在影响 结构化布线系统可在数据中心10—15年生命周期内进行更新及更换。有效的线缆管理被认为是数据中心网络基础设施可靠性的关键。然而，布线与设施系统之间的关系常被忽略。这主要在于结构化布线系统应沿着设施系统路径进行成功部署。     

拱桥吊杆的光纤光栅监测与健康诊断

对拱桥吊杆内力监测光纤光栅(FBG)传感器的波长与应变和温度的关系进行了理论分析,通过标定试验,得到了FBG应变与温度灵敏系数.在四川峨边大渡河拱桥关键性吊杆中成功布设了FBG应变和温度传感器,提出并实施了现役拱桥吊杆FBG传感器的布设工艺以及布设后吊杆的修复方法.利用布设好的FBG传感器成功监测了车辆荷载下吊杆应变历程和温度变化过程、同一车辆荷载对不同长度吊杆的影响.监测结果表明:FBG传感器能够准确地监测车辆荷载大小和温度变化以其可能存在的损伤.     

纤维智能复合筋及其智能吊杆传感器特性研究

提出在玻璃纤维智能复合筋(GFRP)中布设光纤光栅(OFBG),研制出了GFRP-OFBG传感器.通过位伸试验发现,GFRP-OFBG传感器极限应变约为裸OFBG的1.6倍,接近钢铰线极限应变的75%;通过标定试验,得到了它的应变灵敏度系数.对GFRP-OFBG传感器在吊杆中的布设工艺进行了探索,形成了自监测智能吊杆,并进行了试验,结果表明,GFRP-OFBG传感器能够很好地表征吊杆受力情况,测试结果与实际值非常吻合.     

基于EMVA1288标准的图像传感器辐照效应参数测试系统的研制

提出了光电图像传感器辐照效应参数测试需要解决的问题,简述了光电图像传感器参数测试国际标准(EMVA1288)的原理和要求,建立了基于EMVA1288国际标准的光电图像传感器辐照效应测试系统,并进行了辐照试验验证.验证试验表明:该系统能对光电图像传感器辐照前后的时域、空域和光谱类参数进行测试,较好地解决了光电图像传感器辐照效应测试难题,如测试效率、数据可比对、兼容和拓展性等,具有较好的推广应用前景.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.