纳米 SiO 2/ LiClO 4/ PVDF2 HFP复合凝胶聚合物电解质的制备及其电化学性能

为了解决液态电解质锂离子电池存在的安全性问题 , 以偏氟乙烯和六氟丙烯的共聚物( PVDF2 HFP)为基体 , 通过加入高氯酸锂(LiClO 4) 、 增塑剂(碳酸丙烯酯和碳酸二甲酯) 、 纳米二氧化硅等 , 制备出了具有高电导率的复合凝胶聚合物电解质。用 X射线衍射仪测试聚合物电解质的结构 , 用交流阻抗法测定其电导率 , 用线性伏安扫描法研究了该聚合物电解质体系的电化学稳定性 , 并以其为电解质制备成锂离子电池进行充放电测试。结果- 3表明 , 在 20℃ 时复合凝胶聚合物电解质的电导率最高可达 7. 56×10 S/ cm , 该电解质在 41 6 V 以下电化学窗口稳定 , 以其为电解质的锂离子电池具有良好的电化学性能 , 说明纳米 SiO 2/ LiClO 4/ PVDF2 HFP复合凝胶聚合物电解质能满足锂离子电池的应用。     

PVDF-HFP基复合多孔聚合物电解质膜的研制

聚偏氟乙烯-六氟丙烯共聚物(PVDF-HFP)多微孔膜在锂离子电池领域中具有很好的应用前景.采用Bellcore制膜法,用纳米材料对PVDF-HFP为基质的聚合物微孔膜材料进行了改性.利用XRD,SEM,交流阻抗等测试手段对电解质膜的晶体结构、微观形貌、电化学性能等进行了表征.结果表明:改性后聚合物电解质膜的孔隙率增加、结晶度降低,PVDF-HFP/SiO2和PVDF-HFP/Al2O3聚合物电解质隔膜的电导率(20℃)分别达到2.762×10-3S/cm和3.517×10-3S/cm,相应的离子迁移数分别为0.80和0.82.     

聚醚侧链型聚硅氧烷对含氟聚合物凝胶锂离子电解质膜性能的影响

通过浸没沉淀相转化法制备了具有类似孔结构的聚醚侧链型聚硅氧烷(PDMS-g-(PPO-PEO))改性的聚偏氟乙烯(PVDF)和聚偏氟乙烯-六氟丙烯(PVDF-HFP)多孔骨架,经电解液活化后得到凝胶电解质膜,研究了PDMS-g-(PPO-PEO)对含氟聚合物凝胶电解质膜性能的影响。由改性PVDF和PVDF-HFP骨架被电解液活化制备的聚合物凝胶电解质膜,离子电导率分别达到2.2×10-3和1.7×10-3S/cm,综合分析凝胶电解质膜中电解液稳定性和膜的电化学性能发现,PDMS-g-(PPO-PEO)对PVDF骨架的改性效果明显优于PVDF-HFP骨架,共混改性后PVDF可代替PVDF-HFP作为隔膜作为锂离子电池凝胶电解质膜。     

PVDF-HFP基凝胶电解质用于LiNi0.5Co0.2Mn0.3O2三元正极锂离子电池

以聚偏氟乙烯-六氟丙烯(Poly(vinylidene fluoride-hexafluoropropylene),PVDF-HFP)为聚合物基体,新戊二醇二丙烯酸酯(Neopentyl glycol diacrylate,NPGDA)为交联剂,在引发剂偶氮二异丁腈(2,2′-Azobis(2-methylpropionitrile),AIBN)的作用下通过室温现场聚合法制备凝胶电解质用于锂离子电池。探索不同质量比PVDF-HFP/NPGDA对凝胶电解质性能和LiNi_(0.5)-Co_(0.2)Mn_(0.3)O_2三元正极锂离子电池性能的影响。结果表明,当质量比为1∶1时,凝胶电解质具有较高的离子电导率,为8.45mS·cm~(-1),锂离子迁移数为0.78,电化学窗口为4.5V。在电流密度30mA·g~(-1)恒流充放电,首次放电比容量为143mAh·g~(-1),循环50次后仍高达135.3mAh·g~(-1)。电流密度为300mA·g~(-1)时,放电比容量为100.2mAh·g~(-1)。     

PVDF-HFP/LLTO复合锂离子电池隔膜的电化学性能研究

通过溶剂热合成法合成了平均粒径为69.4nm的钙钛矿型快锂离子导体-钛酸镧锂(LLTO),以聚偏氟乙烯-六氟丙烯(PVDF-HFP)为基体材料,掺杂不同含量的LLTO纳米颗粒,利用静电纺丝法制备PVDF-HFP/LLTO复合锂离子电池隔膜。考察分析了LLTO的含量对复合纳米纤维膜的表面形貌、热学性能及电化学性能的影响。研究结果表明,当LLTO的质量掺入量为15%时,该复合隔膜的电解液吸液率为249%,可达到商业隔膜(140%)的1.8倍,离子电导率达2.483×10~(-3)mS/cm;组装成电池后,首次放电比容量高达213mAh/g,显示出优异的电化学性能。     

含PVDF-HFP多孔骨架和交联PEG的锂离子凝胶膜制备与性能

锂离子导电膜是锂离子电池的核心材料,研究了以可溶胀聚合物多孔膜作为骨架、在其孔道内填充凝胶结构而制备的锂离子导电膜.首先采用溶液相转化法制备了聚(偏氟乙烯-六氟丙烯)(PVDF-HFP)多孔膜,然后将多孔膜浸入含有锂盐、聚乙二醇二丙烯酸酯(PEGDA)和过氧化苯甲酰的碳酸酯溶液吸收电解液,再加热引发PEGDA中双键交联得到具有多孔骨架和交联PEG的锂离子凝胶聚合物电解质膜(Li-GPEM).失重、力学和及电化学性质分析表明,所制备的Li-GPEM的电导率为2.25mS/cm,综合性能优于PVDF-HFP多孔膜吸附液态锂盐溶液的体系和共混凝胶膜体系.     

一种基于Al2O3纳米纤维骨架的锂硫电池用凝胶聚合物电解质(英文)

锂硫电池作为一种极具前景的二次电池系统受到了广泛关注.然而,传统液态电解质中多硫化锂的穿梭效应阻碍了其发展.在本工作中,我们制备了用于锂硫电池的功能性凝胶电解质.该电解质由聚偏氟乙烯-六氟丙烯(PVDF-HFP)和连续γ-Al₂O₃三维骨架组成. PVDF-HFP提供锂离子传输路径,使电解质具有良好的柔性; γ-Al₂O₃为路易斯酸,可通过与多硫化锂之间的路易斯酸碱相互作用抑制穿梭效应.而且, γ-Al₂O₃与路易斯碱TFSI-有相互作用,可促进锂盐解离,提高锂离子迁移数.此外,部分γ-Al₂O₃可以与LiF反应形成锂离子导体LiAlO₂和Li₃AlF₆来提高离子电导率.使用该凝胶电解质的锂硫电池在正极容量保持和负极形貌方面展现出良好的稳定性.该项研究为制备高能量锂硫电池的多功能凝胶电解质提供了一种有前景的策略.     

PEO/PPC/Nano TiO_2-PMMA复合聚合物电解质膜的制备及性能

以聚甲基乙撑碳酸酯(PPC)和聚氧化乙烯(PEO)为基体材料,添加经聚甲基丙烯酸甲酯(PMMA)接枝改性的纳米TiO2(nano TiO2-PMMA),采用溶液浇铸法制备了锂离子电池PEO/PPC/TiO2-PMMA复合聚合物电解质(CPE)膜。用热重分析、红外光谱、交流阻抗、扫描电镜等方法研究了nano TiO2-PMMA对复合聚合物电解质膜的电化学性能影响。结果表明,当TiO2的接枝率为8.0%时,PEO/PPC/TiO2-PMMA复合聚合物电解质膜具有良好的电化学性能:室温离子电导率达到1.3×10-5 S/cm,电化学稳定窗口达到4.5V以上,锂离子迁移数为0.49。     

基于三维芳纶纳米纤维骨架的柔性高压复合电解质膜及其固态锂金属电池

聚合物电解质在锂金属电池中的应用受限于锂枝晶生长、电化学不稳定性及较低的离子电导率.为解决这些问题,本文通过向三维多孔芳纶纳米纤维(ANF)中填充聚环氧乙烷(PEO)-双三氟甲基磺酰亚胺锂(LiTFSI)电解质,制备了基于三维芳纶纳米纤维网络骨架的柔性ANF/PEO-LiTFSI复合电解质薄膜.由于其独特的构造及离子在三维ANF/PEO-LiTFSI界面中的连续输运,该复合电解质膜具有比PEO-LiTFSI电解质膜更高的力学强度(10.0 MPa)、热稳定性、电化学稳定性(60℃下达4.6 V)和离子电导率,以及较强的抑制锂枝晶能力.基于该复合电解质的固态LiFePO4/Li电池表现出优异的循环性能(在0.4 C下充放电百次后的容量达130 mA h g-1、保持率为93%).该研究提供了一种基于三维骨架设计和制备高性能电解质的有效方法,有望应用于固态锂金属电池.     

锂离子电池用固态偏氟乙烯-六氟丙烯共聚物电解质的研究进展

固体聚合物电解质具有质轻、安全、易加工等优点,在锂离子电池中具有极大的应用价值.综述了以偏氟乙烯-六氟丙烯(PVDF-HFP)共聚物为基的聚合物电解质的研究工作,介绍了PVDF-HFP固体电解质的制备方法,分析了影响此聚合物电解质性能的因素,并讨论了PVDF-HFP电解质的改性措施,对今后的发展方向作了简要展望.     

Structural and optical properties of AlxOy/Pt/AlxOy multilayer absorber

We report on the microstructure and optical properties of Al_xO_y–Pt–Al_xO_y interference-type multilayer films, deposited by electron beam (e-beam) deposition onto corning 1737 glass, silicon (1 1 1) and copper substrates. The structural properties were investigated by Rutherford backscattering spectrometry, X-ray diffraction, scanning electron microscopy, energy dispersive X-ray spectroscopy and atomic force microscopy. The optical properties were extracted from specular reflection/transmission, diffuse reflectance and emissometer measurements. The stratification of the coatings consists of a semi-transparent middle Pt layer sandwiched between two layers of Al_xO_y. The top and bottom Al_xO_y layers were non-stoichiometric with no crystalline phases present. The Pt layer is in the fcc crystalline phase with a broad size distribution and spheroidal shape in and between the rims of Al_xO_y. The surface roughness of the stack was found to be comparable to the inter-particle distance. The optical calculations confirm a high solar absorptance of ∼0.94 and a low thermal emittance of ∼0.06 for the multilayer stack, which is attributed not only to the optimized nature of the multilayer interference stacks, but also to the specific surface morphology and texture of the coatings. These optical characteristics validate the spectral selectivity of the Al_xO_y–Pt–Al_xO_y interference-type multilayer stack for use in high temperature solar-thermal applications.     

Synthesis of a new perovskite Pb(Li14Nb34)O3

A high-pressure technique was adopted to obtain perovskite-type $\text{Pb(Li}{}_{\mathrm{<mtext>1</mtext><mtext>4</mtext>}}\text{Nb}{}_{\mathrm{<mtext>3</mtext><mtext>4</mtext>}}\text{)}\text{O}{}_3$. A new perovskite $\text{Pb(Li}{}_{\mathrm{<mtext>1</mtext><mtext>4</mtext>}}\text{Nb}{}_{\mathrm{<mtext>3</mtext><mtext>4</mtext>}}\text{)}\text{O}{}_3$ was characterized to have a cubic symmetry with $\text{a}{}_{\mathrm{<mtext>o</mtext>}}\text{= 4.069}\text{A}\text{?}$; Li and Nb ions in the B-site of perovskite lattice may be in a random arrangement.     

Optimization of AlxOy/Pt/AlxOy multilayer spectrally selective coatings for solar-thermal applications

Spectrally selective Al_xO_y/Pt/Al_xO_y multilayer absorber coatings were deposited onto corning 1737 glass, Si (111) and copper substrates using electron beam (e-beam) vacuum evaporator at room temperature. The employment of ellipsometric measurements and optical simulation was proposed as an effective method to optimize and deposit multilayer solar absorber coatings. The optical constants (n and k) measured using spectroscopic ellipsometry, showed that both Al_xO_y layers, which used in the coatings, were dielectric in nature and the Pt layer was semi-transparent. The optimized multilayer coatings exhibited high solar absorptance α ∼ 0.94 ± 0.01 and low thermal emittance ? ∼ 0.06 ± 0.01 at 82 °C. The Rutherford backscattering spectroscopy (RBS) data of Al_xO_y/Pt/Al_xO_y multilayer absorber indicated the Al_xO_y layers present in the coating were nearly stoichiometry. The scanning electron microscope analysis (SEM) result indicated that the average diameter and inter-particles distance of Pt grains were statistically about 146 ± 0.17 nm and 6-10 ± 0.2 nm respectively.     

Bulk crystalline BaPb34Bi14O3: A ceramic superconductor

The preparation conditions of the high T_C ceramic superconductor Ba(Pb,Bi)O₃ is correlated with the superconducting transition. Transition onsets of all materials are similar, but transition widths and transition completeness is strongly dependent on firing temperature. Only materials prepared over a narrow temperature range, resulting in a nearly ideal weight loss, have a complete and narrow transition.     

Electrostriction in Pb (Zn13Nb23)O3

The electrostriction in $\text{Pb (Zn}{}_{\mathrm{<mtext>1</mtext><mtext>3</mtext>}}\text{Nb}{}_{\mathrm{<mtext>2</mtext><mtext>3</mtext>}}\text{)}\text{O}{}_3$ crystals has been investigated using a strain gauge method. In the ferroelectric phase below 140 C, the strain vs the electric field shows a hysteresis, which is ascribed to the effect of ferroelectric domains. A quadratic relation holds between the strain x and the electric polarization P as x = QP² above about 170 C in the paraelectric phase. Values of the electrostrictive Q coefficients are determined from the measurements near 190 C, as Q₁₁ = 1.6·10^?2m⁴/C², Q₁₂ = ?0.86·10^?2m⁴/C², and Q₄₄ = 0.85·10^?2m⁴/C².     

Magnetic,electrical and thermal studies on the V1−xMox02

The monoclinic-to-tetragonal structure transition of oxides V_1?xMo_x0₂ with $\text{0≤}\text{x}\text{≤0.20}$ has been studied by means of DTA, X-ray diffraction, magnetic susceptibility (powder samples) and electrical conductivity (single crystals) measurements within the temperature region 80 K to 400 K. A linear decrease of the transition temperature of 11 K per atom % Mo was observed. The magnetic susceptibility of the low temperature phase was found to be temperature independent paramagnetic for all preparations. Electrical conductivity measurements on the same phase showed crystals with $\text{x}\text{? 0.04}$ to be semiconducting, while a metallic behavior was observed in the region $\text{0.10 ?}\text{x}\text{? 0.14}$.     

n-PbTep+−Pb1−xSnxTe heterojunctions prepared by a modified hot wall technique

$\text{n-PbTe}\text{p}{}^{\mathrm{+}}\text{?}\text{Pb}{}_{\mathrm{1?x}}\text{Sn}{}_{\mathrm{x}}\text{Te}$ heterojunctions with a long wavelength spectral cutoff (λ_c ≈ 6 μm) were prepared using the double-channel hot wall technique. The electrical and photoelectrical properties of the heterojunctions at 77, 197 and 300 K were investigated. Detectors with R_oA equal to 170 Ω cm² and a quantum efficiency of 25–40% were obtained. Reasons for the shift of the long wavelength spectral cutoff of the heterojunctions towards shorter wavelengths are given.     

Core-current-enhanced domain-wall pinning in nanocrystalline Fe/sub 73.5/Cu/sub 1/Nb/sub 3/Si/sub 15.5/B/sub 7/ ribbon

We have studied the influence of surface fields H/sub p/ (generated by either direct or alternating core current) on soft magnetic properties of amorphous and nanocrystalline Fe/sub 73.5/Cu/sub 1/Nb/sub 3/Si/sub 15.5/B/sub 7/ ribbon. While in an amorphous ribbon the coercive field H/sub c/ decreases with H/sub p/, in the same optimally annealed ribbon (H/sub c/=1.3 A/m, M/sub m//spl ap/M/sub s/) H/sub c/ increases with H/sub p/ for all the explored types of H/sub p/ (static and dynamic with different phases with respect to that of the magnetizing field H). The unexpected increase of H/sub c/ in nanocrystalline ribbon is associated with the influence of H/sub p/ on the surface and main (inner) domain structure. Here, we develop a model that takes into account this influence and explains the experimental results.     

Reactive plasma deposited SixCyHz films

Si_xC_yH_z films have been prepared at 200°C by reactive plasma deposition from SiH₄ and CH₄ diluted in helium in a tubular reactor. These films have a ratio s (equal to $\text{Si}\text{(}\text{Si+C}\text{))}$ ranging from 0.2 to 0.8, a refractive index ranging from 1.96 to 2.6 and an optical energy band gap in the range 2.7-2.2 eV. The total quantity of hydrogen in the film is 40% when s=0.5. Infrared analysis shows that these films have large fractions of homonuclear bonds and that this material is best described as a polymer. Mass spectrometric measurements of the gaseous products formed in the SiH₄-CH₄-He plasma have been performed and the results are related to the composition of the deposited layers.     

Interfacial microstructure of NiSix/HfO2/SiOx/Si gate stacks

Integration of NiSi_x based fully silicided metal gates with HfO₂ high-k gate dielectrics offers promise for further scaling of complementary metal-oxide- semiconductor devices. A combination of high resolution transmission electron microscopy and small probe electron energy loss spectroscopy (EELS) and energy dispersive X-ray analysis has been applied to study interfacial reactions in the undoped gate stack. NiSi was found to be polycrystalline with the grain size decreasing from top to bottom of NiSi_x film. Ni content varies near the NiSi/HfO_x interface whereby both Ni-rich and monosilicide phases were observed. Spatially non-uniform distribution of oxygen along NiSi_x/HfO₂ interface was observed by dark field Scanning Transmission Electron Microscopy and EELS. Interfacial roughness of NiSi_x/HfO_x was found higher than that of poly-Si/HfO₂, likely due to compositional non-uniformity of NiSi_x. No intermixing between Hf, Ni and Si beyond interfacial roughness was observed.