共查询到20条相似文献,搜索用时 46 毫秒
1.
L. K. V. LOU T. E. MITCHELL A. H. HEUER 《Journal of the American Ceramic Society》1978,61(9-10):392-396
Impurity phases in commercial hot-pressed Si3 N4 were investigated using transmission electron microscopy. In addition to the dominant, β-Si3 N4 phase, small amounts of Si2 N2 O, SiC, and WC were found. Significantly, a continuous grain-boundary phase was observed in the ∼ 25 high-angle boundaries examined. This film is ∼ 10 Å thick between, β-Si3 N4 grains and ∼ 30 Å thick between Si2 N2 O and β-Si3 N4 grains. 相似文献
2.
Jun-Qi Li Fa Luo Dong-Mei Zhu Wan-Cheng Zhou 《Journal of the American Ceramic Society》2007,90(6):1950-1952
The influence of phase formation on the dielectric properties of silicon nitride (Si3 N4 ) ceramics, which were produced by pressureless sintering with additives in MgO–Al2 O3 –SiO2 system, was investigated. It seems that the difference in the dielectric properties of Si3 N4 ceramics sintered at different temperatures was mainly due to the difference of the relative content of α-Si3 N4 , β-Si3 N4 , and the intermediate product (Si2 N2 O) in the samples. Compared with α-Si3 N4 and Si2 N2 O, β-Si3 N4 is believed to be a major factor influencing the dielectric constant. The high-dielectric constant of β-Si3 N4 could be attributed to the ionic relaxation polarization. 相似文献
3.
Jianren Zeng Yoshinari Miyamoto Osamu Yamada 《Journal of the American Ceramic Society》1991,74(9):2197-2200
Fine Si3 N4 -SiC composite powders were synthesized in various SiC compositions to 46 vol% by nitriding combustion of silicon and carbon. The powders were composed of α-Si3 N4 , β-Si3 N4 , and β-SiC. The reaction analysis suggested that the SiC formation is assisted by the high reaction heat of Si nitridation. The sintered bodies consisted of uniformly dispersed grains of β-Si3 N4 , β-SiC, and a few Si2 N2 O. 相似文献
4.
Sintering kinetics of the system Si3 N4-Y2O3 -Al2 O3 were determined from measurements of the linear shrinkage of pressed disks sintered isothermally at 1500° to 1700°C. Amorphous and crystalline Si3 N4 were studied with additions of 4 to 17 wt% Y2 O3 and 4 wt% A12 O3 . Sintering occurs by a liquid-phase mechanism in which the kinetics exhibit the three stages predicted by Kingery's model. However, the rates during the second stage of the process are higher for all compositions than predicted by the model. X-ray data show the presence of several transient phases which, with sufficient heating, disappear leaving mixtures of β ' -Si3 N4 and glass or β '-Si3 N4 , α '-Si3 N4 , and glass. The compositions and amounts of the residual glassy phases are estimated. 相似文献
5.
The creep rate in MgO-fluxed hot-pressed Si3 N4 is calculated by means of a model which assumes a solution-precipitation mechanism, and by using the kinetic data for the dissolution rate of β-Si3 N4 in an Mg-Si-O-N glass (which was obtained in independent experiments). Despite simplifying assumptions, the predictions match quite favorably with experimental measurements of creep in hot-pressed Si3 N4 . 相似文献
6.
Branko Matovic Georg Rixecker Fritz Aldinger 《Journal of the American Ceramic Society》2004,87(4):546-549
This paper deals with the densification and phase transformation during pressureless sintering of Si3 N4 with LiYO2 as the sintering additive. The dilatometric shrinkage data show that the first Li2 O- rich liquid forms as low as 1250°C, resulting in a significant reduction of sintering temperature. On sintering at 1500°C the bulk density increases to more than 90% of the theoretical density with only minor phase transformation from α-Si3 N4 to β-Si3 N4 taking place. At 1600°C the secondary phase has been completely converted into a glassy phase and total conversion of α-Si3 N4 to β-Si3 N4 takes place. The grain growth is anisotropic, leading to a microstructure which has potential for enhanced fracture toughness. Li2 O evaporates during sintering. Thus, the liquid phase is transient and the final material might have promising mechanical properties as well as promising high-temperature properties despite the low sintering temperature. The results show that the Li2 O−Y2 O3 system can provide very effective low-temperature sintering additives for silicon nitride. 相似文献
7.
Using a recently developed first-principles supercell method that includes the electron and core-hole interaction, the XANES/ELNES spectra of Si- L 2,3 , Si- K , and N- K edges in α-Si3 N4 , β-Si3 N4 , spinel c -Si3 N4 , and Si2 N2 O were calculated and compared. The difference in total energies between the initial ground state and the final core-hole state provides the transition energy. The calculated spectra are found to be in good agreement with the experimental measurements on β-Si3 N4 and c -Si3 N4 . The differences in the XANES/ELNES spectra for the same element in different crystals are explained in terms of differences in local bonding. The use of orbital-decomposed local density of states to explain the measured spectra is shown to be inadequate. These results reaffirm the importance of including the core-hole effect in any XANES/ELNES spectral calculation. 相似文献
8.
The densification behavior of Si3 N4 containing MgO was studied in detail. It was concluded that MgO forms a liquid phase (most likely a magnesium silicate). This liquid wets and allows atomic transfer of Si3 N4 . Evidence of a second-phase material between the Si3 N4 grains was obtained through etching studies. Transformation of α- to β-Si3 N4 during hot-pressing is not necessary for densification. 相似文献
9.
Ellen Y. Sun Kathleen B. Alexander Paul F. Becher Shyh-Lung Hwang 《Journal of the American Ceramic Society》1996,79(10):2626-2632
Interfacial microstructures in βP-Si3 N4 ( w )-Si-Al-Y-O-N-glass systems were investigated by systematically varying the nitrogen content and the Al:Y ratio of the glass matrix. High-resolution and analytical transmission electron microscopy (HREM and AEM) studies revealed that the interfacial microstructure is a function of the glass composition. No interfacial phases were formed in glasses with low Al:Y ratios and in glasses with high Al:Y ratios and low nitrogen content, whereas epitaxial growth of an interfacial layer (100–200 μm thick) on the βP-Si3 N4 ( w ) occurred in a glass matrix with high Al:Y ratio and high nitrogen content. The interfacial layer was identified to be a β'-SiAION phase. Interfaces containing the SiAION layer exhibited high debonding energy compared to Si3 N4 ( w )–glass interfaces. HREM studies indicated that the lattice-mismatch strain in the SiAION layer was relieved by dislocation formation at the SiAION–Si3 N4 ( w ) interface. The difference in interfacial debonding energy was, hence, attributed to the local atomic structure and bonding between the glass-β-Si3 N4 and the glass–β'-SiAION phases. This observation was clear evidence of the strong influence of glass chemistry on the interfacial debonding behavior by altering the interfacial microstructure. 相似文献
10.
Jiang-Tao Li Lin Mei Yun Yang Zhi-Ming Lin 《Journal of the American Ceramic Society》2009,92(3):636-640
Silicon nitride (Si3 N4 ) was synthesized by a selective combustion reaction of silicon powder with nitrogen in air. The α/β-Si3 N4 ratio of the interior product could be tailored by adjusting the Si3 N4 -diluent content in the reactant mixtures. The synthetic β-Si3 N4 showed a well-crystallized rod-like morphology. Mechanical activation greatly enhanced the reactivity of silicon powder, and the slow oxidation of silicon at the sample surface promoted the combustion reaction in air. The formation mechanism of Si3 N4 was analyzed based on a proposed N2 /O2 diffusion kinetic model, and the calculated result is in good agreement with the experimental phenomenon. 相似文献
11.
C. Greskovich 《Journal of the American Ceramic Society》1981,64(2):31-C-
The development of microstructure in hot-pressed Sia N4 was studiehd for a typical Si3 N4 powder with and without BeSiN2 as a densification aid. The effect of hot-pressing temperature on density, α- to β-Si3 N4 conversion and specific surface area showed that BeSiN2 appears to increase the mobility of the system by enhancing densification, α- to β-Si3 N4 transformation, and grain growth at temperatures between 1450° and 1800°. These processes appear to occur in the presence of a liquid phase. 相似文献
12.
KOHJI NOBUGAI SHIGEKI YABE FUMIKAZU KANAMARU 《Journal of the American Ceramic Society》1984,67(7):146-C
Thin films of amorphous Si3 N4 were prepared by the rf-sputtering method, and the effects of titanium and chlorine additives on its crystallization were examined. When Ti-doped amorphous Si3 N4 was heated, TiN precipitated at >1100°C; the TiN precipitates promoted the conversion of amorphous Si3 N4 to β-Si3 N4 . Chlorine led to preferential conversion of amorphous Si3 N4 to α-Si3 N4 . 相似文献
13.
IRVIN C. HUSEBY† HANS L. LUKAS GÜNTER PETZOW 《Journal of the American Ceramic Society》1975,58(9-10):377-380
The 1780°C isothermal section of the reciprocal quasiternary system Si3 N4 -SiO2 -BeO-Be3 N2 was investigated by the X-ray analysis of hot-pressed samples. The equilibrium relations shown involve previously known compounds and 8 newly found compounds: Be6 Si3 N8 , Be11 Si5 N14 , Be5 Si2 N6 , Be9 Si3 N10 , Be8 SiO4 N4 , Be6 O3 N2 , Be8 O5 N2 , and Be9 O6 N2 . Large solid solubility occurs in β-Si3 N4 , BeSiN2 , Be9 Si3 N10 , Be4 SiN4 , and β-Be3 N2 . Solid solubility in β-Si3 N4 extends toward Be2 SiO4 and decreases with increasing temperature from 19 mol% at 1770°C to 11.5 mol% Be2 SiO4 at 1880°C. A 4-phase isotherm, liquid +β-Si3 N4 ( ss )Si2 ON2 + BeO, exists at 1770°C. 相似文献
14.
K. HIRAGA M. HIRABAYASHI S. HAYASHI T. HIRAI 《Journal of the American Ceramic Society》1983,66(8):539-542
Microstructures of Si3 N4 -TiN composites prepared by chemical vapor deposition (CVD) were investigated by the multibeam imaging technique using a 1 MV electron microscope. High-resolution images showed a number of fibrous TIN crystallites dispersed in the matrix of CVD β-Si3 N4 . Crystallographic orientation relations between β-Si3 N4 and TiN were determined directly from the observed images in the subcell scale. The fibrous axis of TiN is parallel to the (110) direction of the NaCl structure and lies along the c axis of the hexagonal β-Si3 N4 crystal. Domain boundaries, planar faults, nonplanar faults, and dislocations were found in the CVD β-Si3 N4 matrix near the TiN crystallites. The origin of the structure defects is briefly discussed in connection with the formation of TiN crystallites in the matrix. 相似文献
15.
Fengxia Li Li Fu Xiaojian Ma Changhui Sun LianCheng Wang Chunli Guo Yitai Qian Yitai Qian 《Journal of the American Ceramic Society》2009,92(2):517-519
Starting from Si powder, NaN3 and different additives such as N -aminothiourea, iodine, or both, Si3 N4 nanomaterials were synthesized through the nitridation of silicon powder in autoclaves at 60°–190°C. As the additive was only N -aminothiourea, β-Si3 N4 nanorods and α-Si3 N4 nanoparticles were prepared at 170°C. If the additive was only iodine, α-Si3 N4 dendrites with β-Si3 N4 nanorods were obtained at 190°C. However, when both N -aminothiourea and iodine were added to the system of Si and NaN3 , the products composed of β-Si3 N4 nanorods and α, β-Si3 N4 nanoparticles could be prepared at 60°C. 相似文献
16.
The subsolidus phase diagram of the quasiternary system Si3 N4 -AlN-Y2 O3 was established. In this system α-Si3 N4 forms a solid solution with 0.1Y2 O3 : 0.9 AIN. The solubility limits are represented by Y0.33 Si10.5 Al1.5 O0.5 N15.5 and Y0.67 Si9 A13 ON15 . At 1700°C an equilibrium exists between β-Si3 N4 and this solid solution. 相似文献
17.
L. J. BOWEN T. G. CARRUTHERS R. J. BROOK 《Journal of the American Ceramic Society》1978,61(7-8):335-359
The rates of densification and phase transformation undergone by α-Si3 N4 during hot-pressing in the presence of Y2 O3 , Y2 O3 −2SiO2 , and Li2 0−2Si02 as additives were studied. Although these systems behave less simply than MgO-doped Si3 N4 , the data can be interpreted during the early stages of hot-pressing as resulting from a solution-diffusion-reprecipitation mechanism, where the diffusion step is rate controlling and where the reprecipitation step invariably results in the formation of the β-Si3 N4 phase. 相似文献
18.
Zhaohui Wang Egil Skybakmoen Tor Grande 《Journal of the American Ceramic Society》2009,92(6):1296-1302
A thorough analysis of a silicon nitride (Si3 N4 )-bonded SiC sidelining material from a Hall-Heroult electrolysis cell is reported. Phase composition before and after chemical degradation of the material is obtained by quantitative analysis using Rietveld refinement of X-ray diffraction data and chemical analysis. The main degradation products as a result of the oxidation of Si3 N4 binder phase are Si2 ON2 in the upper part and Na2 SiO3 in the lower part of the sidelining. The microstructure of α-Si3 N4 (needle) and β-Si3 N4 (shell) as well as the degradation products Si2 ON2 (fiber) and Na2 SiO3 (flake) were revealed by electron microprobe analysis. Chemical reactions and degradation mechanisms are proposed based on the presented findings. The degradation in the lower part is more severe than that in the upper part because Na diffusion from the cathode enhances the oxidation of Si3 N4 . The degradation changes the physical properties of Si3 N4 -bonded SiC such as density and porosity. 相似文献
19.
Naoto Hirosaki Yoshinobu Yamamoto Toshiyuki Nishimura Mamoru Mitomo Junichi Takahashi Hisanori Yamane Masahiko Shimada 《Journal of the American Ceramic Society》2002,85(11):2861-2863
Phase relationships in the Si3 N4 –SiO2 –Lu2 O3 system were investigated at 1850°C in 1 MPa N2 . Only J-phase, Lu4 Si2 O7 N2 (monoclinic, space group P 21 / c , a = 0.74235(8) nm, b = 1.02649(10) nm, c = 1.06595(12) nm, and β= 109.793(6)°) exists as a lutetium silicon oxynitride phase in the Si3 N4 –SiO2 –Lu2 O3 system. The Si3 N4 /Lu2 O3 ratio is 1, corresponding to the M-phase composition, resulted in a mixture of Lu–J-phase, β-Si3 N4 , and a new phase of Lu3 Si5 ON9 , having orthorhombic symmetry, space group Pbcm (No. 57), with a = 0.49361(5) nm, b = 1.60622(16) nm, and c = 1.05143(11) nm. The new phase is best represented in the new Si3 N4 –LuN–Lu2 O3 system. The phase diagram suggests that Lu4 Si2 O7 N2 is an excellent grain-boundary phase of silicon nitride ceramics for high-temperature applications. 相似文献
20.
Tzer-Shin Sheu 《Journal of the American Ceramic Society》1994,77(9):2345-2353
The in situ β-Si3 N4 /α'-SiAlON composite was studied along the Si3 N4 –Y2 O3 : 9 AlN composition line. This two phase composite was fully densified at 1780°C by hot pressing Densification curves and phase developments of the β-Si3 N4 /α'-SiAlON composite were found to vary with composition. Because of the cooperative formation of α'-Si AlON and β-Si3 N4 during its phase development, this composite had equiaxed α'-SiAlON (∼0.2 μm) and elongated β-Si3 N4 fine grains. The optimum mechanical properties of this two-phase composite were in the sample with 30–40%α', which had a flexural strength of 1100 MPa at 25°C 800 MPa at 1400°C in air, and a fracture toughness 6 Mpa·m1/2 . α'-SiAlON grains were equiaxed under a sintering condition at 1780°C or lower temperatures. Morphologies of the α°-SiAlON grains were affected by the sintering conditions. 相似文献