Application of CMOS charge-sensitive preamplifier in triple-GEM detector

1 Introduction With novel materials and advanced technique of printed circuit board (PCB) and micro-electronics be- ing used in MPGD, over the past two decades, great progress has been made in MPGD[1], and as a new type of MPGD, the GEM[2] detector was developed during the late 1990s. Standard GEM from CERN is a thin, two-side copper-coated Kapton foil, perforated with a high density of holes etched using a photolitho- graphic process. The diameter of these holes is about 70 μm (ext…     

A novel radiation imaging sensor based on self-activated pixels

A new position sensitive detector for charged particles and X-rays is proposed based on pixels containing MOS transistors as preamplifiers. The output of the preamplifiers is shorted to strip buses to obtain two-dimensional information with readout requirements similar to a strip detector. The total pixel capacitance is low enough (20-40 fF) to allow a large potential increase at the pixel that collected the charge. The nonlinearity introduced by the large voltage rise effectively switches on the transistors of this pixel and leaves all the other pixels of the same line at a low transconductance state, resulting in an excellent noise performance     

CMOS low-noise switched charge sensitive preamplifier for CdTe andCdZnTe X-ray detectors

CdTe and CdZnTe X-ray detector arrays for imaging and spectroscopy provide low capacitance current sources with low leakage currents. The optimal shaping time for low-noise operation is relatively high in CMOS analog channels that provide the readout for these detectors. The shaper is centered at lower frequencies, and thus the 1/f noise from the electronics is the main noise source that limits the resolution of the channel. The optimal dimensions of the input stage MOSFET are determined by this noise. In this paper a design criterion for the optimization of the resolution and the power consumption in a 1/f noise dominated readout is introduced. A readout based on CMOS switched charge sensitive preamplifier without feedback resistor has been designed and fabricated in the CMOS 2-μ low-noise analog process provided by MOSIS. This design provides high sensitivity and the possibility to integrate a large number of channels with low power consumption. Measurements of the performance of a first prototype chip are presented     

A versatile 16-channel front-end integrated circuit for semiconductor radiation detectors

A CMOS front-end integrated circuit consisting of 16 identical analog channels is proposed for semiconductor radiation detectors. Each of the 16 channels has a low noise charge sensitive amplifier, a pulse shaper, a peak detect and hold circuit and a discriminator, while analog voltage and channel address are routed off the chip. It can accommodate both electron and hole collection with selectable gain and peaking time. Sequential and sparse readout, combining with self-trigger and external trigger, makes four readout modes. The circuit is implemented in a 0.35 μm DP4M (double-poly-quad-metal) CMOS technology with an area of 2.5×1.54 mm2 and power dissipation of 60 mW. A single channel chip is tested with Verigy 93000. The gain is adjustable from 13 to 130 mV·fC–1 while the peaking time varies between 0.7 and 1.6 μs. The linearity is more than 99% and the equivalent noise charge is about 600e.     

Design and test results of a low-noise readout integrated circuit for high-energy particle detectors

A low-noise readout integrated circuit for high-energy particle detector is presented.The noise of charge sensitive amplifier was suppressed by using single-side amplifier and resistors as source degeneration.Continuous-time semi-Gaussian filter is chosen to avoid switch noise.The peaking time of pulse shaper and the gain can be programmed to satisfy multi-application.The readout integrated circuit has been designed and fabricated using a 0.35 μm double-poly triple-metal CMOS technology.Test results show the functions of the readout integrated circuit are correct.The equivalent noise charge with no detector connected is 500–700 e in the typical mode,the gain is tunable within 13–130 mV/fC and the peaking time varies from 0.7 to 1.6 μs,in which the average gain is about 20.5 mV/fC,and the linearity reaches 99.2%.     

GERO: a general SCA-based readout ASIC for micro-pattern gas detectors with configurable storage depth and on-chip digitizer

The paper presents GEneral Read Out(GERO), a general readout ASIC based on a switched capacitor array for micro-pattern gas detectors. It aims at providing general readout electronics for low-to-medium event-rate gas detectors with high sampling frequency, configurable storage depth, and data digitalization. The first prototype GERO chip integrates 16 channels and was fabricated using a 0.18-lm CMOS process. Each channel consists of a sampling array working in a ping-pong mode, a storage array with a 1024-cell depth, and 32 Wilkinson analog-todigital converters. The detailed design and test results are presented in the paper.     

CMOS APS数字模组辐射环境中的屏蔽加固

对互补金属氧化物半导体（CMOS）有源像素传感器（APS）数字模组的辐射耐受性进行了研究,设计并制造了屏蔽加固结构。利用蒙特卡罗模拟软件对屏蔽结构的材料、挡板尺寸以及前挡板开孔孔径进行了设计和计算,并对所设计屏蔽结构的屏蔽性能,加固前后传感器模组的工作寿命以及辐射损伤模式进行了实验研究。实验结果表明:所设计屏蔽结构能够使APS的工作寿命提高约1倍;屏蔽后,主板的受照剂量率约为无屏蔽时的1/3,但其工作寿命仅提高约1倍,这可能是由于模组上各器件的耐辐射性能以及受照剂量存在差异导致的;当辐照总剂量小于50?Gy时暗电流几乎无变化,当总剂量大于150?Gy后APS各像素的暗电流逐渐增大。      

A 64-Channel Wide Dynamic Range Charge Measurement ASIC for Strip and Pixel Ionization Detectors

In this paper we report a 64-channel application specified integrated circuit (ASIC) for the readout of parallel plate strip and pixel ionization detectors. The detectors measure the intensity and the geometrical characteristics of a hadron beam for hadrontherapy cancer treatments. The ASIC is based on a current to frequency converter followed by a counter. It uses a charge balancing integration technique to obtain a dynamic range in excess of$10^5$with a nonlinearity of less than 1%. The ASIC has been designed in a CMOS 0.8$mu m$technology and it has been used for the readout of both strip ionization detectors for beam calibration and pixel detectors for beam monitoring during treatment. A new version of the chip in CMOS 0.35$mu m$technology which allows bipolar input currents has been designed and is currently under test.     

ASD/BLR及其测试平台的设计

ASD/BLR是稻草管探测器读出系统的核心电路,具有很强的功能,详细了解该电路的工作原理,是用好ASD/BLR的基础,对于采用稻草管探测器的读出系统是非常有意义的.给出了ASD/BLR的测试方法及其测试电路的原理.     

硅像素探测器读出芯片的设计

针对应用在高能物理实验的硅像素探测器,设计了一种基于时间过阈技术的像素阵列读出芯片。芯片采用商用的130 nm CMOS工艺进行流片,共有30×10个像素单元,像素单元的面积为50 μm×250 μm。测试结果表明,像素单元电路的等效噪声电荷低于100e^-,积分非线性优于4.2%,基本实现了设计的功能。     

Semiconductor drift detectors for X- and gamma-ray spectroscopy and imaging

The semiconductor drift detectors (SDDs) show basic advantages, in terms of spectroscopic resolution and detection rate, with respect to other semiconductor detectors. These advantages are strictly related to the very low values of the output capacitance of these devices. In this paper the working principles and the performance of the SDDs are presented and the most recent devices (“droplet type” SDDs and monolithic arrays of SDDs) are introduced. The requirements of front-end electronics for the readout of the SDDs signals are then discussed and the most recent implementations (pulsed-reset preamplifiers, multi-channel ASIC readout circuits) are introduced. Some relevant applications of SDDs in the field of X-ray spectroscopy for material analysis and for nuclear physics experiments, and in the field of gamma-ray imaging, are presented as a conclusion.     

A DC-coupled, high sensitivity bolometric detector system for theinfrared telescope in space

The performance of an AC bridge readout system that has been developed for use on the infrared telescope in space is described. The AC bridge readout provides excellent DC stability, allowing observing strategies well suited to spaceborne observations. The ability to modulate the optical signal slowly allows the use of highly sensitive, long time-constant bolometers. At 300 mK, the bolometers have an electrical noise equivalent power of 3×10^-17 W/√Hz. The total noise of the differential signal, including amplifier noise, is less than 8×10^-17 W/√Hz at frequencies as low as 35 mHz     

用于CBM-TOF超级模块探测器质量控制的分布式数据读出方法

高压缩重子物质(Compressed Baryonic Matter,CBM)实验装置飞行时间谱仪利用由多气隙电阻板室(Multi-gap Resistive Plate Chamber,MRPC)探测器构建的超级模块实现高密度、高精度的粒子飞行时间测量,该超级模块可支持高达320通道的高精度时间测量能力,数据率高达6 Gbit·s~(-1)。为实现超级模块探测器的性能评估,提出一种基于千兆以太网的分布式数据读出方法,利用片上系统技术实现读出节点的千兆网络传输能力。测试结果表明,针对单条数据传输路径,原型读出模块在全链路情况下,能实现约467 Mbit·s-1的综合数据传输速率。读出方案中事例组装、命令发送、状态显示等功能均运行正常。     

带增益的气体探测器读出ASIC的研制

设计了用于带增益的气体探测器比如GEM、RPC等读出的ASIC,实现对探测器信号的放大、成形和对后续实时采样ADC的驱动电路.电荷增益和成形时间可调,有利于探测器不同增益下性能的研究,也扩展了芯片的应用范围.由于成形电路引入的噪声变得显著,在低电荷增益下,ENC会随增益下降而增加.芯片采用Chartered 0.35μm2P4M CMOS工艺,论文介绍了芯片的详细设计和仿真结果.     

RG64—High Count Rate Low Noise Multichannel ASIC With Energy Window Selection and Continuous Readout Mode

We report on the performance of a low noise and high count rate readout ASIC with binary architecture and energy window selection for X-ray imaging applications using semiconductor detectors. The ASIC called RG64 is designed in 0.35 mum CMOS process and its total area is 3900times5000 mum². The core of RG64 consists of 64 readout channels. Each channel is built of a charge sensitive amplifier with a second order shaper of peaking time 75 ns, two independent discriminators with an 8-bit offset correction circuit and two independent 20-bit counters with RAM memory buffers. The ENC of the circuit reaches the value of about 126 el. rms with 1 pF input load and 5 mW power consumption per single channel. The mean gain in the multichannel ASIC is about 50 muV/el., with the dispersion from channel to channel of 0.9% (on one sigma level). The deviation of the effective threshold voltage spread for given energy can be reduced to less than 7 el. rms (calculated to the charge sensitive amplifier input). High count rate measurements have been performed up to 2 Mcps of average rate of input pulses, both for AC and DC coupled silicon strip detectors with X-ray photons of energy 8.04 keV. The RG64 can operate both in the continuous readout mode and in the readout mode separate from exposure.     

Conception and design criteria of a novel silicon device for themeasurement of position and energy of X-rays

In this paper we present the working principle and the design criteria of the Controlled-Drift Detector, a novel device suitable for the simultaneous measurement of energy and two-dimensional position of X-rays. In the Controlled-Drift Detector the pixel structure typical of a charge-coupled device and the fast readout typical of a silicon drift detector are joined. When the radiation is to be detected, suitable potential barriers are generated to prevent the drift of the signal electrons that are confined within a matrix of integration wells. The potential barrier which prevents the drift is selectively removable to allow the fast transport of the confined signal electrons to the readout electrodes by means of a static drift field. In principle such a device can achieve excellent energy resolution and readout times of some tens of microseconds. Three different confining mechanisms that allow control of the drift of the stored electrons are studied, and their advantages and drawbacks are discussed. First prototypes of the Controlled-Drift Detector are currently in production     

A compact readout system for multi-pixel hybrid photodiodes

The excellent properties of the recently developed multi-pixel hybrid photodiodes (M-HPD) will be easier to exploit following the development of the new hybrid read-out circuits described in this paper. This system will enable all of the required read-out functions to be accommodated on a single board into which the M-HPD is plugged. The design and performance of a versatile system is described in which a trigger-signal, derived from the common-side of the silicon anode in the M-HPD, is used to trigger the readout of the 61-anode pixels in the M-HPD. The multi-channel amplifier section is based on the use of a new, commercial VLSI chip, whilst the read-out sequencer uses a chip of our own design. The common anode signal is processed by a fast amplifier and discriminator to provide a trigger signal when a single event is detected. In the prototype version, the serial analogue output data-stream is processed using a PC-mounted, high speed ADC. Results obtained using the new read-out system in a compact gamma-camera and with a small muon tracking-chamber demonstrate the low-noise performance of the system. The application of this read-out system in other position-sensitive or multi-anode photomultiplier tube applications are also described     

Low-Power Amplifier-Discriminators for High Time Resolution Detection

Low-power amplifier-discriminators based on a so-called NINO architecture have been developed with high time resolution for the readout of radiation detectors. Two different circuits were integrated in the NINO13 chip, processed in IBM 130 nm CMOS technology. The LCO version (Low Capacitance and consumption Optimization) was designed for potential use as front-end electronics in the Gigatracker of the NA62 experiment at CERN. It was developed as pixel readout for solid-state pixel detectors to permit minimum ionizing particle detection with less than 180 ps rms resolution per pixel on the output pulse, for power consumption below 300 muW per pixel. The HCO version (High Capacitance Optimization) was designed with 4 mW power consumption per channel to provide timing resolution below 20 ps rms on the output pulse, for charges above 10 fC. Results presented show the potential of the LCO and HCO circuits for the precise timing readout of solid-state detectors, vacuum tubes or gas detectors, for applications in high energy physics, bio-technologies or medical imaging.     

辐射导致CMOS图像传感器暗电流随机电报信号

针对空间和核工业应用中辐射引起CMOS图像传感器产生暗电流随机电报信号（DC RTS）问题,对0.18 μm CMOS图像传感器进行不同能量质子、γ射线的辐照试验,辐照后对DC RTS特征参数进行分析。试验结果表明：由于位移损伤和电离总剂量效应产生的RTS缺陷不同,两种DC RTS在台阶、最大跳变幅度、平均时间等参数存在差异。相比于位移损伤产生的DC RTS,电离总剂量产生的DC RTS具有跳变幅度小、平均时间长的波动特点,导致此类DC RTS难以检测分析。像素积分期间传输栅电压会对电离总剂量诱发的DC RTS产生影响。上述工作为深入认识CMOS图像传感器DC RTS现象、探索相关抑制技术提供重要参考。     

基于FELIX的微结构气体探测器读出电子学系统设计

微结构气体探测器因其精度高、面积大等优点,在粒子物理实验中得到了非常广泛的应用。微结构气体探测器的未来应用将面临ASIC种类多、通道数多、数据量大等问题,给读出电子学系统的设计带来了很大的挑战,已成为微结构气体探测器进一步发展应用的瓶颈。FELIX系统具有数据带宽大、通道数多等特点,可很好解决这一问题。基于FELIX的电子学系统由完成探测器信号数字化的前端电子学模块、完成数据汇总的GBT模块、完成数据读出的FELIX系统、完成数据处理的数据处理终端组成,可完成10 240路半数字通道读出或4 096路模拟通道读出。该系统与Micromegas探测器一起实现宇宙线径迹探测,验证了该系统的通用性和兼容性,为微结构气体探测器的应用需求提供了一个通用的解决方案。