紫外-真空紫外光谱辐照度校准系统

为了适应紫外探测技术的迅速发展,满足对紫外光源和紫外探测器校准的需求,建立了紫外-真空紫外光谱辐照度校准装置。装置由标准光源（氘灯）、标准探测器（增强型硅光二极管探测器）、紫外单色仪、真空仓等组成。装置采用双标准比对的方式对被测仪器和器件进行校准。即用标准光源和标准探测器分别对被检紫外光源和被检探测器进行量值传递。校准的光谱范围为110~400 nm。对探测器校准的不确定度最大为12%（k=2）,对光源的校准不确定度最大为20%（k=2）。     

Extreme ultraviolet lithography

Current microlithography used in high-volume integrated circuit manufacturing employs some form of optical projection technology. The most advanced tools use deep-ultraviolet (DUV) radiation having a wavelength of 248 nm and are used to print 250-nm features. These tools will likely be extended for use at the 180-nm generation and perhaps below. New DUV tools using 193-nm radiation are actively under development and are expected to be used for 130-nm generation and perhaps even 100-nm generation. Extending these DUV optical projection tools for manufacturing in the 100-200-nm region will be paced by the development of new high numerical aperture imaging systems and highly complex phase shift masks. For future generations of integrated circuits with minimum feature sizes below 100 nm, 193-nm tools will have great difficulty meeting all manufacturing requirements. This paper describes an alternate optical approach, for sub-100-nm generations, based on extreme ultraviolet radiation at around 13 nm, called extreme ultraviolet lithography (EUVL). This approach uses a laser-produced plasma source of radiation, a reflective mask, and a 4× reduction all-reflective imaging system. The technology is currently in the engineering development phase for an alpha machine. This paper reviews its current status and describes the basic modules or building blocks of a generic EUVL exposure tool     

极端远紫外光刻技术

半导体器件与集成电路的不断小型化要求特征尺寸越来越小 ,极端远紫外光刻是 5种下一代光刻技术候选者之一 ,它的目标是瞄准 70纳米及 70纳米以下的特征尺寸光刻。本文从极端远紫外光源、极端远紫外光学系统、反射掩模、光刻胶、光刻机等方面对极端远紫外光刻技术进行了分析论述 ,并且对它的应用前景进行了简要分析     

半导体泵浦全固态紫外激光器

报道了LD泵浦Nd:YAG,经过KTP和LBO晶体中的倍频、和频,产生355nm紫外激光的全固态调Q激光器.当泵浦功率为100W,脉冲频率5kHz时,产生的1064nm基频光功率为20W,绿光功率为5.62W,输出450mW的紫外激光脉冲,转换效率为8%.     

Surface ultraviolet irradiance from OMI

The Ozone Monitoring Instrument (OMI) onboard the NASA Earth Observing System (EOS) Aura spacecraft is a nadir-viewing spectrometer that measures solar reflected and backscattered light in a selected range of the ultraviolet and visible spectrum. The instrument has a 2600-km-wide viewing swath, and it is capable of daily, global contiguous mapping. We developed and implemented a surface ultraviolet (UV) irradiance algorithm for OMI that produces noontime surface spectral UV irradiance estimates at four wavelengths (305, 310, 324, and 380 nm). Additionally, noontime erythemal dose rate and the erythemal daily dose are estimated. The OMI surface UV algorithm inherits from the surface UV algorithm developed by NASA Goddard Space Flight Center for the Total Ozone Mapping Spectrometer (TOMS). The OMI surface UV irradiance products are produced and archived in HDF5-EOS format by Finnish Meteorological Institute. The accuracy of the surface UV estimates depend on UV wavelength and atmospheric and other geolocation specific conditions ranging from 7% to 30%. A postprocessing aerosol correction can be applied at sites with additional ground-based measurements of the aerosol absorption optical thickness. The current OMI surface UV product validation plan is presented.     

Recent advances in ultraviolet photodetectors

In recent years, ultraviolet (UV) photodetectors (PDs) have received much attention in the various field of research due to wide range of industrial, military, biological and environmental applications. In this paper, a special focus is given to the unique advantages of different UV PDs, current device schemes and demonstrations, novel structures and new material compounds which are used to fabrication of PDs. Additionally, we investigate numerous technical design challenges and compare characteristics of the various PD structures developed to date. Finally, we conclude this review paper with some future research directions in this field.     

Vacuum ultraviolet anti-Stokes Raman lasers

Anti-Stokes Raman laser schemes in atomic sulphur and selenium are studied, allowing conversion of laser lines out of the 350- 178 nm range into the 200-130 nm range. The necessary population inversion with respect to the atomic metastable¹S0levels is produced by photodissociation of the molecules COS and COSe with F2and ArF laser radiation, respectively. Anti-Stokes laser radiation at 167.5 and 158.7 nm for Se and at 182.0, 148.7, and 148.3 nm for S has been generated. Threshold pump energies of 0.1-20 μJ and output energies up to 5 μJ have been observed. At present, the systems are operated at low pump energies, just above threshold. It is expected that by the use of much higher pump energies and by further improvement of system parameters, output energies in the mJ range at MW peak powers will be possible for the VUV transitions.     

CdS紫外探测器的研究

针对制导等应用领域对紫外探测器的需求,介绍了一种CdS半导体紫外探测器研制过程及取得的进展,叙述了器件的工作原理和制作工艺,并针对器件的响应率及量子效率等性能进行了测试,测试结果表明,该器件在探测波长410 nm的光线时,量子效率最高达到了44.5%。     

An ultraviolet gas-loaded free-electron laser

By loading the wiggler cavity of a free-electron laser (FEL) with hydrogen gas, it is possible to tune the FEL to below 130 nm, just above the electronic resonance of molecular hydrogen. The change in wavelength results from the refractive index of the gas, which alters the phase velocity of the wave and so modifies the synchronism condition. Using the parameters of the wiggler on the beamline of the Stanford Superconducting Accelerator, this FEL can be tuned from 500 to 130 nm with a pressure ranging from 0 to 55 torr. The calculated electronic gain varies between 5.6 and 11% over this wavelength interval, comparable to the gain in vacuum     

日盲紫外光通信硬件设计

根据紫外光在大气层中具有的传输特性,提出了一种利用日盲紫外光进行语音通信的设计方案.用紫外光进行通信,关键在于能够对语音信号进行低比特率的编码压缩并调制成紫外光信号,这是紫外通信区别于其它通信方式的重要特征.本设计采用以IR2159为核心器件的频率调制电路成功地对紫外光进行调制,用光电倍增管接收以及CD4046为核心的鉴频电路解调;讨论了该系统设计中语音编码、解码关键器件CT8020、TLV320AIC1107与主机80C51的控制关系;最后给出了一次户外紫外信号传输与接收的实验记录与分析.     

Non-line-of-sight ultraviolet single-scatter path loss model

A novel non-line-of-sight ultraviolet single-scatter path loss model for coplanar geometries is proposed on the basis of spherical coordinate system. In comparison with the classical single-scatter analytical model based on the prolate-spheroidal coordinate system, it is of a simple integral form which only depends on the variables of the zenith and receiver elevation angles. Additionally, analytical approximation for the proposed single-scatter path loss model is presented. Numerical examples on path loss are presented for various system geometries. Correspondingly, the results are verified with the classical single-scatter analytical model, which demonstrates the validity of our path loss model and the reasonability of the analytical approximation.     

直流电泳式紫外氦-镉激光器

氦-镉激光器的主要输出波长是4416A和3250A。4416A激光处于蓝紫光区,对于探测器和记录材料比较灵敏,在全息、光电记录、医疗等较氦-氖6328A激光器有其独特用处。3250A紫外激光比4416A激光的优点尤为突出,对于光化学反应、生物、医疗以及其他激发荧光的科研中可望得到广泛的应用。我们在研制4416A激光的基础上,根据实际应用的需要,试制成功了3250A紫外激光器。     

A quasi-continuous-wave deep ultraviolet laser source

We have developed a quasi-CW, deep ultraviolet source producing >250 mW of 205-nm radiation. The source consists of a 100-MHz, mode-locked, 15-W, 1047-nm master-oscillator/power-amplifier, a synchronously pumped optical parametric oscillator, and three nonlinear conversion stages.     

GaN基紫外探测器发展概况

基于宽禁带半导体材料的GaN基紫外探测器由于具有探测波长可调、工艺兼容性好、结构可多型化等优点,已成为近年来的研究热点。介绍了四种不同结构类型的紫外探测器:光导型、肖特基势垒、金属-半导体-金属、p-i-n结,并回顾了GaN基紫外探测器的的研究历程。     

CdS肖特基紫外探测器的研制

基于微电子平面工艺,采用电子束蒸发Pt方法,制备了基于CdS材料的肖特基紫外探测器。对该器件的I-V特性、光谱响应率、量子效率等参数进行了测试,结果表明器件具有良好的整流特性,室温零偏压下光谱响应范围250~500 nm,在500 nm波长处达到最大光谱响应率0.285 A/W,量子效率为75.3%。并根据热电子发射理论对测试结果进行了计算得到理想因子为1.024,肖特基势垒高度为0.859 eV。     

Volume ultraviolet preionization from bare sparks

Volumetric photoionization in CO2-laser gas mixtures by UV emission from bare sparks was studied in two ways: by spectroscopic emission and absorption measurements, and by direct collection of photoionized electrons. The physical processes were understood sufficiently to permit prediction of initial electron distributions in arbitrary geometries of CO2, N2, He gas mixtures containing known concentrations of ionizable impurity.     

HPLC法测去甲氧基姜黄素纳米脂质载体中药物的含量

目的:建立HPLC法测去甲氧基姜黄素纳米粒脂质载体(NLC)中药物含量的方法。方法:采用HPLC法测定纳米脂质载体(NLC)中药物的含量。结果表明去甲氧基姜黄素在420nm处有最大吸收,浓度在2.04至52.5mg·mL-1时与吸光度呈良好的线性关系,回归方程为:Y=121.29C X-296.19,r=0.9997(n=6);平均回收率为99.19%,RSD为0.79%。结论:本方法操作简单,且稳定性、准确度和精密度均符合要求,可用于NLC制剂中去甲氧基姜黄素含量的测定。     

Molecular photodissociation by an ultraviolet photon

The laser has greatly expanded the study of photodissociation dynamics. By generating large concentrations of fragments using monochromatic light, the laser enables the measurement of their final state distribution. This distribution over translational, vibrational, and rotational states combined with the conservation of energy and linear and angular momentum allows us, in principle, to calculate the forces acting in the excited state. A review of experimental results so far obtained shows that: 1) for diatomics the quantum states of the dissociated atoms can now be directly determined, 2) for triatomics the excess of photon energy over dissociation energy appears in comparable amounts in vibrational and translational energy with rotational energy often substantial as well (ICN and H2S are exceptions), 3) in complex molecules optical energy is absorbed in one part of the molecule and utilized in another with resulting intramolecular transfer of energy.     

Characterisation of ultraviolet nanoimprint dedicated resists

We have developed a new resist material, named NILTM105, for the purpose of ultraviolet curing nanoimprint lithography. Its capability for micro- and nano-scale features patterning has been experimentally analyzed and compared to two other commercially available UV-NIL resists (AMONIL-MMS4 proposed by AMO GmbH, Germany and PAK-01 from Toyo Gosei, Japan). Using 3D-atomic force microscopy, cross section scanning electron microscopy, CD-SEM and ellipsometric measurements, the suitability of this resist for a reliable replication of the mold features was confirmed. Besides, detailed study of the residual thickness and features height variation as a function of pattern size and density has proven that the three investigated resists can flow over distances on the millimeter range. Finally, the etch resistance of the home-developed material was characterized under several plasmas conditions. It was found out that the etch rates values are compatible with the use of this resist as a masking layer during transfer steps.