基于AMBE～2000^TM的高质量语音通信系统

介绍了AMBE-2000^TM声码器语音压缩解压芯片的工作原理及其应用；给出了语音通信系统中AMBE-2000^TM与PCM编解码器AD73311的A／D-D／A接口电路。该系统可以在低速率下保持声音自然、语音清晰，并且在选择语音速率和误码率中提供了很高的灵活性，能实现全双工、实时语音压缩解压等功能，此外还具有低成本、低功耗等优点。因此在卫星通信、数字移动通信、保密通信、语音邮件等方面都有广泛的应用。     

专用语音处理芯片AC48105在低速语音编码设备中的应用

AC48105是以色列AudioCodes公司生产的一种专用语音处理芯片，可用于完成低比特率的语音压缩编码解压和传真等功能.该芯片内含5路相互独立的复用信道，可以传输语音、传真和数据信息，带有的16位DSP内核可提供多种语音编码格式。文中结合该芯片在低速语音编码设备中的应用，详细介绍了其工作模式及配置方法。     

基于DSP的数字语音压缩系统

给出了基于TMS320C6711 DSP和G.729A语音压缩标准的实时语音压缩和解压系统的设计方案,并给出了系统的软、硬件设计.在TMS320C6711高速平台上实现数字语音信号的实时输入、压缩、解压、输出,只需要移植应用程序,就可以实现其他语音功能的扩展.     

TTS语音单元的无损压缩与按需解压缩技术

以波形拼接式维吾尔语音合成系统研发为背景,在已建立的维吾尔语最小发音单位音节和音素作为合成基元的语音库基础上,对语料库中的所有音节、音素进行无损压缩,选择了运算速度快,便于实现的哈夫曼压缩。在解压过程中只解压人们所需的语音单元,而不需要解压整个语料库。实验结果表明,通过哈夫曼压缩算法对语料库进行压缩和解压,减小了语料库的占用空间,同时解压后的语音不失真,解压速度快。     

AMBE-2000^TM声码器在数字加密电话中的应用

介绍了DVSI公司生产的AMBE-2000TM声码器语音压缩解压芯片的应用方法.结合实例给出了语音通信系统中AMBE-2000TM声码器与PCM编解码器AD73311AR的A/D-D/A接口电路,同时给出了该声码器与主机DSP数字信号处理器TMS320F2812的串行接口电路.最后介绍了整个话机的工作过程.     

PCI9052板卡语音处理器设计研究

本文提出了一种基于PCI总线的语音处理器的实现方案,硬件电路主要通过双口RAM和PCI9052芯片与上层处理器完成信息交换。硬件采用“MCU+双口RAM+JAMBE2000+PCI9052+AD/DA”架构,MCU主要完成数字语音数据处理的功能;双口RAM主要完成与其他单元数据交换的功能;PCI9052芯片完成接口转换等功能;语音压缩芯片完成数字语音的数据压缩、解压功能;A/D、D/A转换器完成语音数据的A/D、D/A变换;放大器电路主要完成语音模拟信号的处理过程,即业务数据处理。本文详细阐述了接口芯片的应用、特点以及芯片的主要功能等,并研究了PCI结构在配置相关软件过程中的具体开发。PCI芯片能够有效地实现PCI总线与本地总线之间的迅速转变,证实该芯片具备优良的PCI接口技术,便于开发者开发及应用。     

基于DSP和MATLAB的语音数据采集和处理系统

目前迅速发展的数字信号处理器已在数据采集、通信及多媒体等领域中得到广泛的应用。本系统采用TI公司16位定点高速芯片TMS320C5410和专用语音采集芯片TLC320AD50进行数据采集和相关滤波、压缩处理，并将最终的数据流经串口送入计算机。在计算机中使用MATLAB控制串口接收数据并完成解压、回放、编码、通信仿真等处理。     

小波变换在图像压缩与解压硬件中的应用

讲述了利用小波变换对视频图像进行压缩和解压的原理。并从原理和应用角度对基于小波变换原理的视频图像压缩与解压芯片ADV611进行了介绍。给出了关于ADV611芯片在图像压缩中的应用实例和效果图。     

语音采集压缩在 Windows Mobile 移动终端的研究与实现

文中研究了语音采集压缩技术在Windows Mobile中的应用,使用Windows API封装的录音函数采集语音,采用G.726语音压缩编码技术压缩,最后,基于微软最新的mobile 6.0平台在智能手机中实现.实验结果表明,压缩后的语音数据量是先前的1/8,而且通过解压后的语音质量和原来的基本一致,从而为语音在移动智能终端上的结合提供了一种较好的方法.     

数字语音处理软件及其接口电路设计

语音模块是一些数字终端的重要组成部分。文中讨论了笔者研发的语音模块中数字语音处理软件及其接口电路设计，涉及到语音数据的压缩与解压、接口电路及信今系统的开发，以及多主流程软件设计等方面的内容。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.