White-light emitting thin-film electroluminescent device usingmicromachined structure

A white-light emitting electroluminescent (EL) device with newly developed ZnS:Pr, Ce, F phosphor layer was fabricated inside a micromachined well having four-sided Si mirrors, prepared by anisotropic wet etching of Si (100) wafer. Highly luminant EL was achieved using the Si micromirrors. Furthermore, the EL device utilizing the metallized mirrors incorporated into the glass substrates also exhibited enhanced brightness when compared to the conventional face-emitting EL device     

The development of chelate metal complexes as an organicelectroluminescent material

The chelate metal complexes, such as tris(8-hydroxyquinolinate)aluminum (Alq₃), have excellent electroluminescent (EL) properties. Several chelate metal complexes were developed and the experimental rule of molecular design for use in an organic EL device was found. When the chelate metal complex has the structure of an inner complex sell, the EL device is fabricated by conventional vacuum-vapor deposition. This rule was applied to some chelate metal complexes, and, as a result, various complex materials could be obtained. RGB (red, green, and blue) emission was achieved using only chelate metal complexes, after successfully obtaining high-luminance blue-emitting materials, such as azomethine-zinc complex. This shows that the chelate metal complexes can be applied to full-color flat displays as an emitting material. As for durability, when Bis(10-hydroxybenzo[h]quinolinato)beryllium (BeBq₂) was used as an electron transport layer, a lifetime (initial luminance: 500 cd/m ²) of more than 3500 h, which is a practical level, was achieved in running tests. Thus, it seems that chelate metal complexes are a strong candidate as an organic EL material in practical use     

以Ta2O5为电子加速层的MEH-PPV的发光

以Ta2O5为加速层,制备了结构为ITO/Ta2O5/MEH-PPV/Ta2O5/Al的电致发光(EL)器件.通过对器件的EL特性、发光波形随驱动电压变化关系等的研究发现,器件的发光性质和发光机理与固态类阴极射线发光现象一致.研究结果表明,固态类阴极射线发光是一种普遍现象,用具有加速电子能力的Ta2O5作为加速层的EL...     

Temperature dependences of electroluminescent characteristics inthe devices fabricated with novel triphenylamine derivatives

In this paper, we investigated the temperature dependences of the electroluminescent (EL) characteristics of two-layer devices fabricated using four hole-transporting materials based on triphenylamine, and a typical emitting material, tris (8-quinolinolato) aluminum. The thermal stability of the organic EL devices is clearly seen to depend on the glass transition temperature (T_g) of the hole-transporting material. The EL device with a pentamer of triphenylamine exhibits uniform light emission in a continuous operation up to 155°C without breakdown. A lowering of the “turn-on voltage” for light emission and an increase of luminous efficiency with increasing temperature are found in the devices. Excellent durability of continuous operation is also achieved at high temperatures. Our results indicate that the linear linkage of triphenylamine provides the high T_g material and the high device performance at high temperatures     

短波长谐振腔发光二极管外延及性能研究

利用金属有机化学气相沉积（MOCVD）方法生长650 nm谐振腔半导体发光二极管（RCLED）,利用光致发光（PL）谱和电致发光（EL）谱研究了其发光特性.由于上、下布拉格反射镜的影响,导致其PL强度只有普通LED的1/20;EL谱纯度有了很大提高,半峰宽（FWHM）由普通LED的20 nm降到4 nm以下.最好的器件测试结果表明,可以在60 mA、2.71 V下,实现1.45 mW以上发射功率,最窄FWHM在3 nm.     

顶部发射绿色磷光OLED的制备与瞬态性能研究

用磷光材料Ir(ppy)3制备了高效率顶部发射绿色有机发光二极管(OLED),器件的结构为:ITO/Ag/NPB/Ir(ppy)3(5wt%):TPBI/TPBI/LiF/Al。研究发现与传统的无微腔结构器件相比顶部发射器件的性能有大幅度提高,其最大效率为18cd/A。通过使用F-P腔,器件的电致发光(EL)寿命由7.6μs降低为7.1μs,有效地缓解了效率随电流密度增大而下降的问题。顶部发射器件EL共振的主峰位于505nm处,发射光谱半峰宽(FWHM)窄化为23nm,色纯度为(x=0.122,y=0.671),发射光随探测角度变化较小。最后,分析了其瞬态光电性能变化原因。     

基于ZnS/SiO2量子点的EL器件及宽谱发射

将ZnS/SiO2量子点与PVP在甲醇溶液中充分混合作为活性层材料,通过匀胶方法制备了ITO//ZnS/SiO2∶PVP//Al结构的电致发光(EL)薄膜器件。器件的EL光谱由510～560nm波段的绿光发射和相对较弱的蓝紫光(400nm左右)发射组成,通过对发光光谱的分析发现,上述两个区域的发射均来自ZnS的缺陷能级。其中,绿色发光峰来源于较低能态的缺陷能级;而高能区域的蓝色发光则是由于高能态的缺陷能级俘获电子的几率增大,在这过程中,PVP形成的能级阶梯有效增加了高能态缺陷能级俘获电子的几率,提升了高能波段的发光效率,相应地,器件的色坐标也随之从(0.37,0.42)变化到(0.30,0.34),趋于白光发射。     

一种新结构中ZnSe薄膜电致发光特性研究

用电子束蒸发的方法制备了一种新的ITO／SiO2／ZnSe／SiO2／Al薄膜电致(TFEL)发光器件。在交流电压驱动下,其有2个发光峰,分别位于466nm和560nm。通过研究器件(PL)激发(PLE)谱、光致发光、EL发光以及EL发光强度随驱动电压和频率的变化发现,器件的发光来源于ZnSe的带边发射和自激活发光中心。器件的发光机理与一般的无机电致发光有所不同。这里,SiO2作为电子加速层,ZnSe作为发光层,电子在SiO2层中的高电场作用下被加速到很高的能量,然后直接碰撞激发ZnSe分子使其发光。这种发光现象被称为固态类阴极发光。     

MgO界面层对n-ZnO纳米棒/p-GaN异质结LED光电性能的影响

为了较好地实现n-ZnO的电致发光(EL),利用水热法在p-GaN外延片上制备了ZnO纳米棒阵列,构造了n-ZnO纳米棒/p-GaN异质结LED原型器件,并研究了MgO界面层对器件光电性能的影响。结果表明,n-ZnO纳米棒/p-GaN异质结器件具有明显的二极管整流效应。室温、正向偏压下,n-ZnO纳米棒/p-GaN异质结LED仅在430nm附近具有单一的发光峰,而n-ZnO纳米棒/MgO/p-GaN异质结LED的电致发光光谱由一个从近紫外到蓝绿光区的宽发光带组成。结合光致发光(PL)谱和Anderson能带模型,深入分析了n-ZnO纳米棒/p-GaN异质结的载流子复合机制。     

有机小分子掺杂的聚合物共混发光二极管

报道了用可溶性发光材料聚（２,５－二丁氧基苯）做发光材料,分别与母体聚合物聚乙烯基咔唑（ＰＶＫ）和聚甲基丙烯酸甲脂（ＰＭＭＡ）共混,并掺杂电子传输材料叔丁基联苯基苯基口恶二唑和空穴传输材料二胺衍生物作发光层,用铟锡氧化物和铝分别作正负电极,制作了两种蓝紫光有机／聚合物单层发光器件。通过比较两种器件的器件特性,发现以ＰＭＭＡ做母体的器件比用ＰＶＫ做母体的器件有更好的稳定性,器件开启电压为１０Ｖ左右,发光峰值波长均位于４２４ｎｍ,电致发光效率可达２．９％,比用ＰＶＫ做母体的器件效率高一倍多。     

Enhancing the brightness of thin-film electroluminescent displaysby improving the emission process

AC thin film electroluminescent (ACTFEL) devices emit light laterally in addition to conventional surface emission. Because of the waveguiding in ACTFEL devices, lateral emission is stronger than surface emission. However, the former is ignored for displays. This note demonstrates that mirrors can be fabricated into substrates to reflect upward the lateral emission, which can then be summed with surface emission for displays. Use of standard silicon and thin film technology has demonstrated that the reflected lateral emission is a factor of three brighter than conventional surface emission. hence the effective efficiency of out-coupling the light has been improved for an ACTFEL device     

650纳米谐振腔发光二极管外延生长及性能研究

采用金属有机化学气相淀积（MOCVD）方法生长了波长为650nm的谐振腔发光二极管（RCLED）。为提高界面生长质量,降低压降,采用AlGaInP材料系制作上DBRs。利用光致发光谱（PL）与电致发光谱（EL）研究了其发光特性。得到的器件在20mA注入电流下光功率平均为0.5mW,压降2.2V,光谱半峰宽（FWHM）约10nm。     

Epitaxy and Characteristics of Resonant Cavity LEDs at 650 nm

Resonant-cavity light-emitting diodes (RCLED) at 650 nm wavelength were grown by metal organic chemical vapor deposition. In order to improve the interface quality and reduce the device voltage, an AlGaInP material system has been chosen to grow the top DBRs. The emission properties of the RCLED were characterized by measuring PL and EL spectra. The average emission power of the device is 0.5 mW at 20 mA and 2.2 V, and its spectrum full width at half maximum is about 10 nm.     

Effect of a critical percolation threshold in purified short carbon nanotube-polymer/ZnS:Cu,Cl composite on electroluminescence

AC driven inorganic electroluminescence (EL) of the carbon nanotube (CNT)-polymer/phosphor composite was fabricated to investigate the effect of the critical percolation threshold by CNT concentration on EL performance. In order to control the appropriate CNT condition in EL device, CNTs were shortened by cryogenic crushing and purified by thermal treatment. Among various CNT concentrations in the composite film, the critical percolation threshold can be found to be 0.0925 wt.% by fitting conductivity data of the composite film. Near the critical percolation threshold of a CNT concentration, the EL performances of the composite EL were greatly increased compared to the reference EL. The tunneling barrier thickness at the ZnS–Cu_xS contact could become thin to induce more charge carrier tunneling into ZnS host lattice by the local field enhancement of CNTs, resulting in increased electron–hole recombination to produce more light emission.     

High brightness visible (660 nm) resonant-cavity light-emittingdiode

Visible (660 nm) resonant-cavity light-emitting (RCLEDs) have been fabricated. The top-emitting devices employed two AlGaAs-AlAs-Bragg mirrors and GaInP-AlGaInP quantum-well active layers. The device performance was characterized as a function of the device diameters, ranging from 24 to 202 μm. The larger devices exhibited a nearly linear increase of output power with injected current with 8.4-mW emission at 120 mA. A maximum external efficiency of 4.8% was measured at 4 mA on the 84-μm aperture devices. All devices exhibited a narrow emission at 659-661 nm with a linewidth around 3 nm. The results show that RCLED's are promising low-cost light sources for plastic fiber transmission as well as display applications     

ZnO量子点／SiO2复合器件的可调控电致发光研究

在不同浓度的SiO2乙醇溶液中制备了一系列ZnO量子点／SiO2复合材料,通过匀胶方法将其制备成复合薄膜器件。器件的电致发光（EL）随着SiO2浓度的增加逐渐蓝移。通过实验,探索了发生蓝移的机制。选取一种ZnO量子点／SiO2复合材料均匀混入不同质量的纯SiO2后,测试结果表明,该蓝移现象不是SiO2自身发光引起的。通...     

Solid- and gas-source “hybrid” Si molecular beam epitaxy for a Si1−xGex/Si single quantum well electroluminescent device

A p-i-n diode for a Si_1−xGe_x/Si single quantum well (SQW) electroluminescent (EL) device was successfully fabricated by solid-source (SS) and gas-source (GS) “hybrid” Si molecular beam epitaxy (MBE). First, the undoped SQW layer was grown on a p-type Si(100) substrate by GSMBE using disilane (Si₂H₆) and germane (GeH₄). Then the n-type Si contact layer was regrown by SSMBE after transferring the sample through the air. A (2 × 1) reconstruction was observed on a GSMBE-prepared Si surface even after the sample was exposed to air for 15 h. The excellent quality of the EL p-i-n device was shown by the sharpest emission lines, ≈5.5 meV, ever reported in the EL spectra of an SiGe system. Linear polarization along the SQW plane was also observed for no-phonon replica of EL.     

Metal-anode-dependent spectra and efficiency in blue top-emitting organic light-emitting devices

In this study, the blue top-emitting organic light-emitting devices (TEOLEDs) with different metal anodes are fabricated. The effect of different anode materials on the spectra and efficiency of blue TEOLEDs is studied. We demonstrate that Al is a more suitable anode material for blue TEOLEDs due to its larger phase shift on reflectance (PSR) than the other common metal materials, such as Ag and Au. The influence of light outcoupling layer (LOL) on the transmittance and PSR of cathode is also investigated to obtain the optimum condition for devices. Angle-independent electroluminescence (EL) spectra are obtained in blue TEOLEDs for each metal anode but the device with Al anode possesses higher efficiency and much thicker organic layers, which is beneficial to the lifetime of the device. These results offer a practicable platform for the realization of TEOLEDs based full-color displays and lightings.     

Enhancement and stability of luminescence in thin-film light-emitting devices based on heterostructure of ladder-type poly (p-phenylene)

The microcavity thin-film light-emitting devices were fabricated, which use two organic material layers, ladder-type poly(p-phenylene) (LPPP) and (8-hydroxyquimalin) aluminum (Alq₃), sandwiched between two injecting electrodes. With the ribbon-type macromolecule structure, the LPPP exhibits higher thermal and chemical stability than its linear analog. The broad photoluminescence (PL) and electroluminescence (EL) emission means LPPP can be tuned over the full visible region. LPPP was the emitting layer and the cavity transporter. Alq₃ was the electron transporter. The investigation on EL and PL properties of the devices indicated that the microcavity effect has been achieved by adjusting the thickness of organic light-emitting layers. The experimental results showed that directional emission and net emission were efficiently enhanced. The heavily born-doped diamond electrode in place of the metal electrode aluminum can also greatly improve the stability of the devices.     

Organic EL cells using alkaline metal compounds as electroninjection materials

Organic electroluminescent (EL) devices with multilayer structure were fabricated using alkaline metal compounds as the electron injection materials. We found that the EL cells using the alkaline metal compounds reduce the driving voltage and increase the quantum EL efficiency. In addition, these cells are made with good reproducibility compared with the cells using aluminum and lithium alloy cathode