正交读出方式体全息光栅通信波长衍射特性

为了寻求高质量和高密度的密集波分复用器件,采用了在双掺铟铁的铌酸锂晶体中透射式记录/正交式读出方案制作体全息光栅的方法,对体全息光栅衍射特性进行理论分析和实验验证。利用波长为532nm的激光记录尺寸比为1:1的体全息光栅,然后用中心波长为1550nm的红外通讯波长成功读出,取得了波长选择性为0.5nm的波长衍射特性数据。同时,利用2维耦合波理论的闭形式解析解得到了该体全息光栅衍射效率随波长的变化关系。结果表明,实验结果与理论预期相符合,这一方法对制作体全息光栅密集波分复用器件的实用化是有帮助的。     

正交读出方式体全息光栅通信波长衍射特性

为了寻求高质量和高密度的密集波分复用器件,采用了在双掺铟铁的铌酸锂晶体中透射式记录/正交式读出方案制作体全息光栅的方法,对体全息光栅衍射特性进行理论分析和实验验证.利用波长为532nm的激光记录尺寸比为1:1的体全息光栅,然后用中心波长为1550nm的红外通讯波长成功读出,取得了波长选择性为0.5nm的波长衍射特性数据.同时,利用2维耦合波理论的闭形式解析解得到了该体全息光栅衍射效率随波长的变化关系.结果表明,实验结果与理论预期相符合,这一方法对制作体全息光栅密集波分复用器件的实用化是有帮助的.     

密集型多重体全息光栅波长解复用技术

阐述了光折变多重体全息光栅作为滤波器实现波长解复用的原理,分析了滤波器的波长和角度选择特性,对器件设计中要考虑的问题进行了讨论。提出了实现多重体全息光栅波长解复用的实验方案和实用化要解决的问题。     

体全息波分复用器件波长选择性实验

为了研究体全息光栅波分复用器件的波长选择性,采用532 nm绿光透射式记录的方法在一块双掺铟铁立方型铌酸锂晶体中先后记录了具有不同光栅尺寸比的有限尺寸体全息光栅,用光通信波段红外可调谐激光器对这些光栅分别进行了正交式读出.光栅尺寸比为4∶3,4∶2和5∶2时得到的波长选择性曲线的3 dB带宽分别为0.48 nm,0.45 nm和0.43 nm,对应的布拉格中心波长均与理论预测值吻合得很好.表明在用通信波长对体全息光栅进行读出时,随着光栅尺寸比的增大,波长选择性曲线的3 dB带宽会减小.通过选择合适的光栅尺寸比可以明显改进体全息光栅波分复用器件的波长选择性,从而达到密集波分复用的需求.     

密集型多重体全息光栅波长解复用技术

阐述了光折变多重体全息光栅作为滤波器实现波长解复用的原理,分析了滤波器的波 长和角度选择特性,对器件设计中要考虑的问题进行了讨论。提出了实现多重体全息光栅波长解复用的实验方案和实用化要解决的问题。     

阵列波导光栅的应用前景

阵列波导光栅是高速大容量DWDM光通信系统的光键器件，是目前研究、开发与应用的热点，简要介绍了AWG滤波器，复用／解复用器，光波长信道选择器，光插／分复用器，多波长光源和多波长接收器的应用前景。     

新型直波导阵列波导光栅的设计与仿真

提出了一种基于直波导的新型阵列波导光栅(AWG).与常规阵列波导光栅器件相比,该方法简化了器件结构与制备工艺,有望提高器件成品率,降低器件制作成本.器件的输入/输出耦合器采用自聚焦平板波导(GISLAB),其输入/输出均为平端面.阵列波导采用直波导取代常规AWG的弯曲波导,可采用光敏平板波导材料通过两次紫外写入实现.采用半矢量光束传输法对器件进行模拟,结果表明该器件可以实现多波长的解复用,其解复用的信道间隔为3.2 am,输出光谱非均匀性约为1.6 dB.     

基于阵列波导光栅的波分复用器件

阵列波导光栅波分复用／解复用器有N个输入端口和N个输出端口,能同时传输N^3路不同的光信号,除具有波分复用和解复用功能外,能灵活地与其它光器件组成多波长光源、光路分插复用器、光路交叉连接器、波长路由器等波分复用器件,在光通信网络中有广泛的应用前景。     

阵列波导光栅在光纤通信网络中的应用

基于集成光学的N×N阵列波导光栅(AWG)是波分复用传输网络最成功的光滤波器之一,是光子网络的关键基础元件,它可用于光信号的复用、解复用、光路上/下分插复用、光交叉连接,波长路由等。 波长N×N复用/解复用器 N×NAWG具有波长间隔小、信道数多、串音较低、输出平坦等特点,是较为理想的波分复用全光器件。该复用器由N个输入/输出波导,两个会聚的平板波导和在相邻波导之间路径长度差△L恒定的阵列波导构成。输入光射入第一个平板波导并激励阵列波导,光通过阵列波     

全色铬酸盐明胶全息记录新材料

通过在明胶层中引入新型多色光敏剂及光化学增感助剂,成功研制出了三基色感光度达30 mJ/cm2、衍射效率大于85%和分辨率大于5 000 lines/mm的全色铬酸盐明胶全息记录新材料.对其配方构成、光谱响应曲线、三基色感光灵敏度、反射体全息光栅的光谱选择性、透射体全息光栅的角度及波长选择性等特性进行了报道,对其在真彩色全息显示、角度复用波长复用全息存储等的初步应用结果作了简要的介绍.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.