低温烧结制备(Ba_(0.9)Ca_(0.1))(Zr_(0.15)Ti_(0.85))O_3无铅压电陶瓷

采用溶胶-凝胶法制备出(Ba0.9Ca0.1)(Zr0.15Ti0.85)O3(简称BCT-BZT)粉体,并采用两段式传统烧结法用较低的烧结温度(1 290℃)制备了该无铅压电陶瓷,运用热重差示扫描测量法分析了反应过程。X射线衍射测试结果表明,BCT-BZT粉体和陶瓷均是典型的钙钛矿结构,根据谢乐公式计算出粉体的晶粒尺寸约为32nm。此外,室温下利用TF Analyzer 2000铁电分析仪测得该陶瓷的介电常数高达6 134,居里温度约为95℃,最大压电系数d33达到263pm/V。利用此方法制备的BCT-BZT无铅压电陶瓷,其烧结温度与固相反应法相比降低了约200℃左右,同时还保持了良好的压电性能,从而降低了烧结成本,有利于实现该陶瓷的大规模工业化生产。     

直接反应烧结法制备(Ba_(1-x)Ca_x)(Ti_(0.85)Zr_(0.15))O_3陶瓷的微观结构和电性能研究

采用直接反应烧结法制备了(Ba1-x Ca x)(Ti0.85Zr0.15)O3无铅压电陶瓷,分析了不同的Ca含量时陶瓷的晶相结构、微观结构、密度及电性能。结果表明,采用直接反应烧结法制备的(Ba1-x Ca x)(Ti0.85Zr0.15)O3无铅压电陶瓷具有纯的钙钛矿相结构;微观结构致密,晶粒大小比较均匀,陶瓷样品出现较大的直径收缩率(25%左右);随着Ca含量的增加陶瓷的居里温度略微降低,室温介电常数出现较大增加,压电常数变大,其中x=0.15时压电性能最好,d33为208 pC/N。     

高压电常数(Ba_(0.85)Ca_(0.15))(Ti_(0.9)Zr_(0.1-x)Sn_x)O_3陶瓷结构与性能研究

采用传统固相法制备了(Ba0.85Ca0.15)(Ti0.9Zr0.1-x Snx)O3(CBTZS-x)无铅压电陶瓷,研究了不同Sn含量(x=0~0.1)对CBTZS-x陶瓷相结构、介电以及压电性能的影响。实验结果表明:所有样品均为纯钙钛矿结构;随着Sn含量增加,室温下样品逐渐由三方和四方相共存结构转变为四方相结构,且三方-四方相转变温度T R-T和居里温度TC均逐渐减小,当x=0.04时,TR-T更接近于室温,此时表现出优异的压电性能;样品的剩余极化强度Pr和矫顽场Ec随着x增加均呈现出减小的趋势,而相对介电常数εr则逐渐增大。当x=0.04时,CBTZS-x材料的综合性能最佳:d33=665pC/N,kp=55.6%,εr=4520,Pr=12.5μC/cm2,Ec=1.6 kV/cm,表明该陶瓷材料具有很好的应用前景。     

制备工艺对(Ba0.85Ca0.15)(Ti0.9Zr0.1)O3无铅压电陶瓷结构与性能的影响

采用液相混合与固相烧结相结合的方法制备了(Ba_0.85Ca_0.15)(Ti_0.9Zr_0.1)O₃ (BCTZ) 无铅压电陶瓷, 系统研究了烧结保温时间对其相结构、介电、压电和铁电性能的影响以及电学性能随温度的变化。研究结果表明: 制备的陶瓷样品具有单一的四方钙钛矿结构。当烧结温度为1540℃时, 随着保温时间的延长, 样品晶粒尺寸变大, 居里温度(T_c)升高, 压电性能提高, 电致伸缩性能下降。当保温时间为24 h时, BCTZ陶瓷综合性能最为优异: T_c ~90℃, tanδ < 0.05, k_p ~ 0.46, d₃₃ ~ 540 pC/N, P_s ~17 μC/cm²。陶瓷电学性能随温度变化测试结果又表明, BCTZ陶瓷的电学性能具有很强的温度依赖性, 随着温度的升高其电学性能逐渐下降。     

(Ba0.85Ca0.15)(Ti0.9Zr0.1-xSnx)O3无铅压电陶瓷的相结构与压电性能

钙锆共掺钛酸钡陶瓷(BCZT)具有优异的介电性能和压电性能, 是一类具有发展潜力的无铅压电陶瓷, 但其压电性能仍无法与铅基陶瓷媲美。为提高压电性能, 本研究对陶瓷材料进行Sn元素掺杂改性((Ba_0.85Ca_0.15)- (Ti_0.9Zr_0.1-xSn_x)O₃, x=0.02~0.07))。晶体结构分析证实所有组分的陶瓷无杂相, 处于正交相与四方相两相共存状态, 并具有较大的c/a; 显微结构分析发现所有陶瓷都很致密, 且平均晶粒尺寸随着Sn含量的增加而增大。当x=0.04时, 陶瓷最致密, 且室温处于准同型相界附近, 因此拥有最佳的电学性能: d₃₃=590 pC•N ^-1, k_p=52.2%, tanδ=0.016, ε ^T₃₃=5372, d ^*₃₃=734 pm•V ^-1, IR=57.8 GΩ•cm。本研究表明: Sn掺杂的BCZT基无铅压电陶瓷具有优异的压电性能, 有望在换能器、机电传感器和驱动器等方面得到应用。     

(Na,K)0.5Bi0.5TiO3无铅压电陶瓷的结构与性能研究

研究了K0.5Bi0.5TiO3(KBT)含量对Na0.5Bi0.5TiO3-K0.5Bi0.5TiO3(BNKT)无铅压电陶瓷的显微组织结构及压电性能的影响规律,结果表明随KBT含量增加,BNKT无铅压电陶瓷的晶胞参数增大,密度减小,晶粒尺寸减小,居里温度从326℃升高到360℃,压电常数、介电常数和介电损耗增加,机械品质因数下降;KBT含量为0.15mol的(Na0.85K0.15)0.5Bi0.5TiO3无铅压电陶瓷位于准同型相界处,具有较佳的压电性能.     

Sb_2O_3掺杂对(Na_(1-x)K_x)_(0.5)Bi_(0.5)TiO_3无铅压电陶瓷性能的影响

采用传统工艺制备了(Na0.84K0.16)0.5Bi0.5TiO3压电陶瓷,研究掺杂离子Sb3+对(Na0.84K0.16)0.5Bi0.5TiO3微观结构和电性能的影响。结果表明烧结温度在1160℃时,样品密度达到最大值5.85g/cm3;X射线衍射(XRD)分析所有陶瓷样品均为钙钛矿相,Sb2O3的掺杂只改变晶胞体积或产生铋离子空位或钠离子空位,不形成异相;掺杂量在0.4%~0.6%时介电常数先增加后减小,介电损耗呈现增大趋势;掺杂0.5%的Sb2O3时,d33最大为142pC/N。     

CuO掺杂的(Na_(0.66)K_(0.34))NbO_3无铅压电陶瓷性能研究

采用传统工艺制备了CuO掺杂的无铅压电陶瓷(Na0.66K0.34)NbO3,研究了CuO掺杂对其压电、介电、铁电等性质的影响。实验结果显示,CuO掺杂促进了晶粒生长,降低了样品的烧结温度,适量掺杂能够显著提高陶瓷样品的密度。当掺杂量为0.5%(摩尔分数)时,样品的密度为4.26g/cm3,品质因子Qm提高到400,介电损耗tanδ降低至0.8%。实验结果还显示,CuO掺杂使得陶瓷变硬,起到硬性添加剂的作用。随着CuO掺杂量的增加,样品的居里点(TC)、正交-四方相变温度(TT-O)、压电常数d33以及机电耦合系数kp均明显降低,而矫顽场显著增加。对于不掺杂的(Na0.66K0.34)NbO3陶瓷,其d33高达107pC/N,该陶瓷优异的压电性能表明,除了具有准同型相界结构的(Na0.5K0.5)NbO3外,(Na0.66K0.34)NbO3也是一种具有研究潜力的无铅压电陶瓷组分。     

RTGG法制备(Na_(0.84)K_(0.16))_(0.5)Bi_(0.5)TiO_3无铅压电织构陶瓷的研究

以NaCl-KCl熔盐法制备出了片状的Bi4Ti3O12微晶模板,选用此模板分别采用干法和湿法流延工艺结合RTGG技术制备了(Na0.84K0.16)0.5Bi0.5TiO3无铅压电织构陶瓷。研究了不同工艺条件下获得的织构陶瓷烧结行为、织构度、显微组织结构和电性能的变化规律。结果表明,(Na0.84K0.16)0.5Bi0.5TiO3织构陶瓷的烧成温度范围只有10~20℃,其介电性能、压电性能呈现明显的各向异性,沿垂直于流延方向织构陶瓷的各种电学性能均明显优于平行于流延方向的电学性能,两种流延方法在1150℃烧结所得的(Na0.84K0.16)0.5Bi0.5TiO3织构陶瓷在显微组织结构和电性能方面均表现出最强的各向异性,该织构陶瓷的压电常数d33=134pC/N。     

BaZrO3掺杂对(K0.49Na0.51)0.98Li0.02(Nb0.77Ta0.18Sb0.05)O3无铅压电陶瓷的结构与电性能的影响

采用固相反应法制备了(K_0.49Na_0.51)_0.98Li_0.02(Nb_0.77Ta_0.18Sb_0.05)O₃-xBaZrO₃ (NKNLST-xBZ, x = 0~0.020 mol)无铅压电陶瓷, 系统研究了BaZrO₃的掺杂量对陶瓷的压电、介电、机电和铁电性能的影响。结果表明: 随着BaZrO₃掺杂量x的增加, 陶瓷的晶体结构由正交相向四方相转变, 在x=0.005~0.008区间出现正交相与四方相两相共存的区域, 在此区域内陶瓷的晶粒变得细小且均匀, 介电损耗tanδ大幅降低, 压电常数d₃₃和平面机电耦合系数k_p增加。该体系陶瓷的介电常数ε T 33 /ε0则随着BaZrO₃的增加持续增加, 相变温度则向低温方向移动。当x=0.005时, 该组成陶瓷具有最佳的综合性能: 压电常数d33=372 pC/N, 平面机电耦合系数kp=47.2%, 介电损耗tanδ=3.1%, 以及较高的介电常数ε^T₃₃ /ε₀=1470和居里温度T_c=208℃。     

退火温度对Pb(Zr_(0.53)Ti_(0.47))O_3薄膜结构及其性能的影响

采用sol-gel法在Pt/Ti/SiO_2/Si衬底上制备Pb(Zr_(0.53)Ti_(0.47))O_3薄膜.利用X射线衍射仪(XRD)和原子力显微镜(AFM)对其晶格结构和微观形貌进行了表征,通过改变退火温度制得了具有单一钙钛矿结构的Pb(Zr_(0.53)Ti_(0.47))O_3薄膜.然后将该薄膜与环氧树脂形成复合结构材料.对其铁电性能以及复合材料的阻尼性能进行了测试,结果表明,退火温度的升高有利于改善薄膜的铁电性能,在750℃下退火的Pb(Zr_(0.53)Ti_(0.47))O_3薄膜,其剩余极化值2Pr达到了68.6μC/cm~2, 矫顽场强2E_c达到158.7kV/cm;同时退火温度的升高还有利于薄膜致密度的提高,对复合材料的阻尼性能也有一定的改善,当退火温度达到800℃,复合材料的阻尼损耗因子达到最大值,阻尼温域最宽,阻尼性能最好.     

稀土氧化物Eu_2O_3掺杂对CaCu3Ti_4O_(12)陶瓷微结构及介电特性的影响

以稀土氧化物Eu_2O_3为添加剂,采用固相反应法制备了不同掺杂比例(质量比:x=0,0.2%,0.5%,1%)的CCTO陶瓷样品,利用SEM、XRD、4294A型高精密阻抗分析仪等测试手段对样品的微观结构、介电性能和交流电阻率进行了测试分析.掺杂之后样品的晶格结构并未发生改变,但是样品内部相对晶相含量和晶粒平均尺寸减小,同时掺杂阻碍了样品内部晶界处富铜相的生成;纯CCTO的XRD图谱中分别出现了CuO、TiO_2和CaCO_3杂相,掺杂样品的图谱中并未出现上述杂相;样品的介电性能与相同组分材料内部的相对晶相含量,晶粒平均尺寸和晶界处富铜相有很大关系.Eu_2O_3掺杂提高了样品介电性能的频率和温度稳定性.当掺杂量为0.2%和0.5%时,样品的介电性能得到较好改善效果.样品在低频40Hz和高频3.5MHz的交流电阻率测量结果很好的验证了Eu_2O_3掺杂导致的微结构变化对样品介电性能的影响.     

铁电（Pb_（0．925）La_（0．075））（Zr_（0．65）Ti_（0

本文对射频磁控溅射制备的（Ｐｂ＿（０．９２５）Ｌａ＿（０．０７５）－（Ｚｒ＿（０．６５）Ｔｉ＿（０．３５））＿（０．９８１）Ｏ＿３薄膜作了ＸＰＳ全扫描和窄扫描能谱分析。结果表明，薄膜的表面缺Ｐｂ是形成ＴＺＯ相的主要原因；随着退火温度的升高，薄膜中钙钛矿相的形成导致各元素的结合能发生位移。     

Structural,dielectric, impedance and ferroelectric properties of lead-free Bi(Fe0.85Dy0.15)O3 ceramic

Nowadays, several research groups are extensively trying to develop by synthesizing and characterizing single/co-doped single-phase bismuth ferrite (BFO) in order to get a highly efficient eco-friendly multifunctional devices. In this process, this report is an attempt to provide the detailed studies of structural, dielectric, impedance and ferroelectric properties of Bi(Fe_0.85Dy_0.15)O₃ ceramic fabricated via the solid-state reaction method. Analysis of X-ray diffraction (XRD) data confirms a single phase of orthorhombic symmetry. The average crystallite (particle) size is found to be in the order of?~?41 nm. The field emission scanning electron microscopy (FE-SEM) spectrum shows a homogeneous grain distribution of the sample. The elemental composition examined by means of energy dispersive X-ray spectroscopy (EDXS) shows the existence of constituent elements of the sample. The electrical measurements and analysis, carried out using a computer-controlled phase sensitive multimeter (PSM) in a frequency range of 1 kHz–1 MHz at different sets of temperature (25–325 °C), provide many interesting features to explain further conduction mechanism. The dielectric analysis exhibits high value of dielectric constant (?_r) and small value of dielectric loss (tanδ). Due to the effect of electronic and space charge polarization, the ?_r value falls with an increasing frequency. The frequency–temperature dependence of impedance and electrical modulus analysis reveals the presence of semiconductor nature and non-Debye type of relaxation process in the sample. The analysis of ac-conductivity (σ_ac) with respect to frequency and temperature obeys the universal Jonscher’s power law. The electric polarization study shows an enhancement in ferroelectric property of the material. Hence, based on the significant enhancement in electrical and ferroelectric properties of the Bi(Fe_0.85Dy_0.15)O₃ material, the material may be considered for some applications.

     

Sintering temperature-induced electrical properties of (Ba0.90Ca0.10)(Ti0.85Zr0.15)O3 lead-free ceramics

Effects of the sintering temperature on the microstructure and electrical properties of (Ba_0.90Ca_0.10)(Ti_0.85Zr_0.15)O₃ (BCTZ) lead-free piezoelectric ceramics have been studied, where these ceramics were prepared by the conventional oxide-mixed method at varied sintering temperatures from 1300 °C to 1500 °C. These BCTZ ceramics exhibits a phase transition from a rhombohedral phase to the coexistence of rhombohedral and tetragonal phases with an increase of sintering temperature. With an increase of sintering temperature, their relative density and average grain size gradually increase, and electrical properties are improved greatly. These BCTZ ceramics sintered at ～1440 °C have optimum electrical properties: d₃₃ ～ 442 pC/N and k_p ～ 48.9%, making it a promising material for lead-free piezoelectric ceramics.     

(Ba1-xCax)(Ti0.82Zr（0.18）)O3陶瓷结构与介电性能研究

采用固相反应法制备了(Ba1-xCax)(Ti0.82Zr0.18)O3(BCZT,0≤x≤0.26)陶瓷,研究了Ca2+掺杂对BCZT陶瓷微观结构和介电性能的影响.结果表明:当Ca2+掺杂量为0.16时,BCZT陶瓷出现第二相CaTiO3,其四方率c/a随Ca2+掺杂量的增加先减小再增大,当Ca2+掺杂量为0.06时达到最小值1.00276.通过容差因子和晶格参数的计算确认了Ca2+已进入到A位;随Ca2+掺杂量的增加,晶粒得到细化,居里温度向低温方向移动,介电峰被压低并展宽,且逐渐呈现铁电弥散性.     

(1-x)(Mg0.9Zn0.1)TiO3-x(Ca0.61La0.26)TiO3系微波介质陶瓷的改性研究

实验研究了(1-x)(Mg0.9 Zn0.1)TiO3-x(Ca0.61La0.26)TiO3(MZCLT)系陶瓷的微观结构和微波介电性能.目的是通过(Ca0.61 La0.26)TiO3协调(Mg0.9Zn0.1)TiO3陶瓷的谐振频率温度系数.MZCLT陶瓷的主晶相为(Mg0.9Zn0.1)TiO3和Ca0.61L...     

Effect of Zr doping on the microstructure and electric properties of BaHf0.1Ti0.9O3 ceramics

Pure and Zr-doped barium titanate hafnate (BaHf_0.1Ti_0.9O₃, short for BHT) ceramics were prepared by conventional solid state reaction method. The microstructures, dielectric and ferroelectric properties of BaHf_0.1Ti_0.9-x Zr _x O₃ (x = 0, 0.02, 0.04, 0.10) ceramics have been investigated. From the X-ray diffraction patterns it is indicated that Zr⁴⁺ ions have entered the unit cell maintaining the tetragonal perovskite structure of solid solution and the lattice constant of Zr-doped BHT ceramics increases with the increase of Zr content. There is an obvious difference between the grain shape of pure BHT ceramics and that of Zr-doped BHT ceramics. The temperature dependences of dielectric constant indicated that all of the three phase transition temperatures increase after doped zirconium. It is found that well-behaved hysteresis loops can be observed in pure and Zr-doped BHT ceramics. The remanent polarization (2P _r) and the coercive electric field (2E _C) of BaHf_0.1Ti_0.9-x Zr _x O₃ ceramics gradually decrease as the Zr content increases from 2 to 10 mol %.