非晶壳层SixN/SiyC包覆硅量子点的微结构表征

通过磁控溅射技术和1100℃的高温后退火处理,在富硅碳化硅薄膜中形成高密度小尺寸的硅量子点,硅量子点的结构由X射线光电子能谱和高分辨透射电镜进行表征,结果表明,在高温退火过程中,碳化硅薄膜发生了相分离,硅和碳的化学结合态在热力学的驱动下形成稳定的Si-Si键和Si-C键,同时,氮原子钝化了分解过程中形成的Si悬挂键,在硅量子点的表面形成SixN/SiyC非晶壳层。这种非晶壳层包覆量子点的结构配置非常有利于形成稳定的超小硅量子点 （1-3 nm）,此结构的量子效应所产生的光吸收了从绿光到紫外光的光谱范围,大幅度提高光伏太阳能电池的光电转换效率。     

量子计算研究现状与未来发展

量子计算乃至更为广泛的量子信息,是基于量子力学原理发展出来的概念与技术体系,涉及信息的本质及其处理。量子计算利用量子叠加、量子纠缠等资源进行信息编码和处理,已被证明在若干问题上具有相对于经典计算的极大优势,在实用化后将对信息及相关科技产生深远影响。本文概要回顾了量子计算的发展历史,如量子计算思想与概念的形成、重要理论及算法的发展以及应用情况;梳理总结了代表性的量子计算技术路线及其发展态势,如超导量子计算、分布式超导量子计算、光量子计算、囚禁离子量子计算、硅基量子计算及若干其他体系。着眼不同技术路线面临的共性问题,对我国量子计算领域未来发展提出建议：注重战略规划和布局,培养高水平研究团队,加强基础研究、核心技术、关键设备的自主研发。     

纳米硅量子点的自组织形成及其量子效应

用减压气相淀积法(LPCVD)，在二氧化硅以及石英基板上自组织形成了高密度的(10^11cm^-2)纳米尺寸的半球状硅单晶粒(硅量子点)，并进一步利用自组织生成的硅量子形成具有悬浮栅极的MOS单元，验证了硅量子点的量子效应。     

一种新颖的硅量子点-金复合纳米粒子的制备和表征

利用电化学刻蚀法制备的硅量子点的还原特性,通过调整硅量子点与氯金酸的量的比例,可控合成了包含有不同尺寸金纳米颗粒的复合纳米粒子,并通过实验证明了硅量子点与金纳米颗粒的结合。在电化学刻蚀制备硅量子点的同时,通过微波辅助法可以迅速地在硅量子点表面有效地修饰上一部分羧基、羟基或者烷基链,从而间接预先对这种复合纳米粒子进行修饰。这种新型的纳米复合材料具有硅量子点的荧光性质的同时,还具有各种尺寸纳米金的光学性质,具有广阔的应用前景和研究价值。     

纳米硅量子线的发光特性研究

利用脉冲激光蒸发或高温物理升华的方法,制备出纯度极高、直径分布均匀(13nm左右)的硅的一维量子线.光致发光(PL)测量显示,在313.5nm激光激发下,室温下硅量子线具有红绿蓝三色发光.对硅量子线进行氧化处理后,随氧化时间的增加,红光PL峰发生蓝移,而绿、蓝峰没有移动.红光PL与量子尺寸限制效应有关,而绿、蓝光PL来源于表层氧化硅中的缺陷发光.     

美国生产出99.9999%最高纯度硅可为量子计算铺路

正继去年获得纯度高达5个9(99.9998%)的硅后,美国国家标准与技术研究院的团队又一次刷新纪录:他们使用一项相对简单的技术,生产出了可能是目前纯度最高的硅,该材料99.9999%以上的成分为硅28,仅有不到百万分之一为不确定的同位素硅29。许多量子计算方案需要同位素纯硅,比如用作衬底,在其上嵌入量子位(存储信息的量子比特)。项目负责人、该研究院物理测量实验室量子工序和计量学组的乔希·波默罗伊表示,"眼下面临的真正挑战是如     

周期性梯度富硅SiNx薄膜的微结构与发光特性

采用磁控共溅射结合快速光热退火技术在单晶硅和石英衬底上制备了含硅量子点的周期性梯度富硅SiN_x薄膜(梯度薄膜)和单层富硅SiN_x薄膜(单层薄膜)。采用Raman光谱、掠入射X射线衍射(GIXRD)、透射电子显微镜(TEM)、傅里叶变换红外(FTIR)光谱和光致发光(PL)光谱分析了薄膜的结构特性、键合特性和发光特性。Raman光谱、GIXRD和TEM结果表明, 梯度薄膜和单层薄膜中的硅量子点晶化率分别为41.7%和39.2%; 梯度薄膜的硅量子点密度是单层薄膜的5.4倍。FTIR光谱结果显示两种薄膜均为富硅氮化硅薄膜, 梯度薄膜的硅含量小于单层薄膜。PL光谱结果表明梯度薄膜中的辐射复合缺陷少于单层薄膜。     

Ⅱ-Ⅵ族化合物半导体量子结构材料和器件的研究与发展

简要介绍了量子结构材料与器件中的基本概念,重点介绍了量子结构的定义和量子尺寸效应的能带裁剪工程。以II-VI族化合物半导体为例,介绍了量子尺寸效应对于激子束缚能的影响。以此为基础,综述了II-VI族化合物半导体量子阱、量子点等量子结构材料以及量子结构器件在光电探测、发光器件与太阳能电池领域的研究现状,并总结了II-VI族化合物半导体量子结构材料与器件的发展趋势。     

硅基低维红外探测薄膜材料的研究概况

Si基探测器与硅读出电路的单片集成不仅使光电芯片在性能上得到重要改善,还可极大地降低成本.在对量子阱、量子点原理描述的基础上,综述了它们应用于薄膜红外探测材料的研究进展,提出了近期工作的重点.     

Ⅱ-Ⅵ族化合物半导体量子结构材料和器件的研究与发展

简要介绍了量子结构材料与器件中的基本概念,重点介绍了量子结构的定义和量子尺寸效应的能带裁剪工程.以Ⅱ-Ⅵ族化合物半导体为例,介绍了量子尺寸效应对于激子束缚能的影响.以此为基础,综述了Ⅱ-Ⅵ族化合物半导体量子阱、量子点等量子结构材料以及量子结构器件在光电探测、发光器件与太阳能电池领域的研究现状,并总结了Ⅱ-Ⅵ族化合物半导...     

Atomic-scale cellular model and profile simulation of Si etching: Formation of surface roughness and residue

Formation mechanisms for profile anomalies such as surface roughness and residue have been investigated numerically and experimentally for Si etching in Cl₂/O₂ plasmas. The numerical simulation employed an atomic-scale cellular model (ASCeM) based on the Monte Carlo algorithm, which reproduced the feature profile evolution experimentally observed during etching at increased O₂ concentrations. A comparison between simulation and experiment indicated that the local surface oxidation induces surface roughness at the bottom of the feature during etching; then, synergistic effects between surface oxidation and ion scattering in microstructural features on roughened surfaces increase the surface roughness, which in turn causes a number of significant residues or micropillars on bottom surfaces of the feature. In practice, in roughened microstructural features, geometrical shadowing effects for neutral oxygen suppress the surface oxidation at the local feature bottom, where the energetic ion incidence is increased owing to ion scattering on sidewalls of the local feature.     

Preparation of Co-passivated porous silicon by stain etching

Co-passivated porous silicon (CPS) was prepared by stain etching. CPS samples prepared at different etching stages have different morphologies. All these morphologies are significantly different from those of conventional porous silicon (PS) etched in none cobalt-etching solution. The experimental results indicate that Co atoms only exist in a very thin layer on CPS surface, where Co atoms are well-distributed and Co atoms have hardly diffused into the substrate. Compared with the formation mechanism of conventional PS, there are two routes to generate holes in the formation of CPS, and there is NO₂ gas evolved from etching solution in a certain condition during the etching.     

干法刻蚀制作场发射阴极阵列

利用离子束刻蚀(IBE)和反应离子刻蚀(RIE)等干法刻蚀方法来制造带栅极的场发射阴极阵列。本文描述了其制作的流程工艺,并对制作中的一些关键问题和技术进行了讨论。采用SF6作为反应气体的RIE用来制作硅尖,而用CF4 H2为反应气体的RIE用来清除SiO2,离子束刻蚀用来形成栅极。采用干法刻蚀,可以制造出栅极开口小的场发射阴极阵列。     

Hydrogen plasma etching of silicon dioxide in a hollow cathode system

Chemical etching of various materials has been observed when hydrogen plasmas are used in material processing. In the case of the deposition of diamond films the preferential etching of sp² bonded carbon is considered to be of fundamental importance. A few papers have been published which have indicated that etching by hydrogen ions is different to that by hydrogen atoms. In this paper we describe the etching of silicon dioxide by hydrogen which was plasma-activated in a molybdenum-lined RF hollow cathode. The etch rate was seen to be thermally activated but decreased with increasing plasma power. The addition of a few percentage of helium increased the etch rate. The application of a − 50 V bias to the sample holder almost doubled the etch rate indicating the importance of ion bombardment for the chemical reaction. At high plasma powers and substrate temperatures in excess of 450 °C a thin molybdenum deposit was formed on the quartz samples.     

Effect of porous silicon stain etched on large area alkaline textured crystalline silicon solar cells

This work shows the effects of porous silicon stain etched on alkaline textured antireflection coatings of large area monocrystalline silicon solar cells. The texturization process has been produced by immersion of the silicon wafers in different carbonate-based solutions. The porous silicon layers were formed by stain etching in a HNO₃/HF aqueous solution before or after the texturization process. We study the effects of different alkaline and acidic solutions and the etching times on the solar cell parameters and the surface reflectance of the device. We have found that the average reflectance of the surface is lowered when the porous etching is combined with the texturization in the alkaline solution. However, the solar cell characteristics are not improved.     

A systematic study of DRIE process for high aspect ratio microstructuring

Various MEMS devices like Accelerometers, Resonators, RF- Filters, Micropumps, Microvalves, Microdispensers and Microthrusters are produced by removing the bulk of the substrate materials. Fabrications of such Microsystems requires the ability to engineer precise three-dimensional structures in the silicon substrate. Fabrication of MEMS faces multiple technological challenges before it can become a commercially viable technology. One key fabrication process required is the deep silicon etching for forming high aspect ratio structures. There is an increasing interest in the use of dry plasma etching for this application because of its anisotropic etching behavior, high etch speed, good uniformity and profile control, high aspect ratio capabilities without having any undesired secondary effects i.e. RIE lags, Loading, microloading, loosing of anisotropic nature of etching as aspect ratio increases, micro-grass and even etch stalling. Developing a DRIE micro-machining process requires a thorough understanding of all plasma parameters, which can affect a silicon etching process and their use to suppress the secondary effects. In this paper our intention is to investigate the influence of etching gas flow, etching gas pressure, passivation gas pressure, ICP coil power, Platen power and etch and passivation time sequence on etch rate and side wall profile. Parameter ramping is a powerful technique used to achieve the requirements of high aspect ratio microstructures (HARMS) for MEMS applications by having high etch rate with good profile/CD control. The results presented here can be used to rationally vary processing parameters in order to meet the microstructural requirements for a particular application.     

两步法腐蚀硅锥阴极阵列的工艺研究

详细研究了利用硅的各向异性腐蚀、各向同性腐蚀制备硅锥阴极阵列的工艺。采用快速腐蚀与缓蚀削尖两步工艺，制备出了均匀、尖锐的硅锥阵列。其阵列密度可达106／cm2，硅锥曲率半径可做到20nm。     

Vapor-solid-solid Si nano-whiskers growth using pure hydrogen as the source gas

This paper describes the growth mechanism and structure of Si whiskers grown on a Si substrate in a tungsten hot filament chemical vapor deposition reactor with pure hydrogen as source gas using a two step process. In the first step, atomic hydrogen etched the silicon surface, forming silicon hydrides that react with tungsten from the filament. The resulting silicide particles deposited on the silicon surface forming a mesh-like pattern. The particles work as an etching mask against hydrogen radical etching of the silicon surface and inverted-pyramids or V-groove-shaped surface texture were obtained. In the second step the filament current was reduced and whiskers grew onto the substrate due to the interaction of the silicon hydrides with the particles and subsequent precipitation of saturated Si. The whiskers were found to have tungsten silicide particles on their tip, suggesting the whisker growth was through the Vapor-Solid-Solid (VSS) mechanism. A balance between the hydrogen radical etching effect and the supply of silicon hydride from the etching reaction on the silicon surface is crucial for the growth of dense silicon whiskers.     

Characterization of stain etched p-type silicon in aqueous HF solutions containing HNO3 or KMnO4

Stain etching of p-type silicon in hydrofluoric acid solutions containing nitric acid or potassium permanganate as an oxidizing agent has been examined. The effects of etching time, oxidizing agent and HF concentrations on the electrochemical behavior of etched silicon surfaces have been investigated by electrochemical impedance spectroscopy (EIS). An electrical equivalent circuit was used for fitting the impedance data. The morphology and the chemical composition of the etched Si surface were studied using scanning electron microscopy (SEM) and energy dispersive X-ray (EDX) techniques, respectively. A porous silicon layer was formed on Si etched in HF solutions containing HNO₃, while etching in HF solutions containing KMnO₄ led to the formation of a porous layer and simultaneous deposition of K₂SiF₆ inside the pores. The thickness of K₂SiF₆ layer increases with increasing the KMnO₄ concentration and decreases as the concentration of HF increases.