Dielectric properties of NaF-B2O3 glasses doped with certain transition metal ions

Dielectric constant ε, loss tan δ, a.c. conductivity Σ and dielectric breakdown strength of NaF-B₂O₃ glasses doped with certain transition metal ions (viz. Cu²⁺, VO²⁺, Ti⁴⁺ and Mn⁴⁺) are studied in the frequency range 10²-10⁷ Hz and in the temperature range 30–250°C. The values of ε, tan δ, Σ_a.c. are found to be the highest for Cu²⁺ doped glasses and the lowest for Mn⁴⁺ doped glasses. Activation energy for a.c. conduction and the value of dielectric breakdown strength are found to be the lowest for Cu²⁺ doped glasses and the highest for Mn⁴⁺ doped glasses. With the help of infrared spectra, increase in the values of ε and tan δ of these glasses with frequency and temperature are identified with space charge polarization. An attempt has been made to explain a.c. conduction phenomenon on the basis of quantum mechanical tunneling model (QMT)/carrier barrier hopping model.     

Electrical properties of thermally evaporated tellurium thin films

Results of dielectric and conduction properties of vacuum evaporated tellurium (Te) thin film capacitors (Al-Te-Al) have been reported in the frequency range 1–100 kHz at various temperatures (303–423 K). Loss factor (tanδ) which shows a maximum with frequency increases with rise of temperature and tanδ _max shift towards high frequency region. The large values of capacitance and dielectric constant (ɛ′) in the low frequency region indicate the possibility of an interfacial polarization mechanism.I-V characteristics show ohmic, space charge limited (SCLC) and thermionic emission conduction mechanisms to operate at low, intermediate and high voltages respectively. Various transport parameters have been calculated. It has been observed that the Schottky type of conduction is predominant in the high field region and the Schottky barrier height has been determined. The Hall coefficient, Hall mobility and carrier concentration are also discussed.     

Acoustic investigations on PbO-Al2O3-B2O3 glasses doped with certain rare earth ions

Elastic moduli (Y, η), Poisson’s ratio (σ), microhardness (H) and some thermodynamical parameters such as Debye temperature (θ_D), diffusion constant (D _i),latent heat of melting (ΔH _m) etc of PbO-Al₂O₃-B₂O₃ glasses doped with rare earth ions viz. Pr³⁺, Nd³⁺, Sm³⁺, Eu³⁺, Tb³⁺, Dy³⁺, Ho³⁺, Er³⁺ and Yb³⁺, are studied as functions of temperatures (in the temperature range 30–200°C) by ultrasonic techniques. All these parameters are found to increase with increasing atomic numberZ of the rare earth ions and found to decrease with increasing temperature of measurement. From these results (together with IR spectra of these glasses), an attempt is made to throw some light on the mechanical strength of these glasses.     

Electric and dielectric properties of solution-gas interface-grown PbS films

Dielectric properties andI–V characteristics of solution-gas interface-formed PbS thin-film capacitors (Al/PbS/Al) of various thicknesses have been studied in the frequency range 10-10⁶ Hz at various temperatures (300–443 K). Current-voltage (I–V) characteristics show space-charge-limited conduction. Dielectric constant (ε) increases with increasing film thickness and temperature and decreases with increase of frequency. The loss factor (tanδ) peaks observed in tanδ vs frequency and tanδ vs temperature reveal relaxation effect from dipolar orientation. These maxima shift to higher-temperature region with increasing frequency. The large increase in capacitance (C) and dielectric constant (ε) towards low-frequency (f) region indicates the possibility of an interfacial polarization mechanism in this region.     

Microstructure and dielectric properties of BaTiO3-based X7R ceramics

The relationship between the microstructures and dielectric properties of BaTiO₃-based X7R ceramics has been investigated at different calcination temperatures. The XRD and SEM results show that calcinations of BaTiO₃ raw powders increase the grain size and stabilize the tetragonality (c/a ratio) of the ceramics. The grain growth caused by the calcination prevents the doped ions from diffusing into the interior of the grains, and then increases the volume fraction of the tetragonal phased core. This process greatly increases the dielectric constant by improving the ferroelectricity. As a result, the relaxation mechanism of the domain reorientation generates high loss tangent. The BaTiO₃ ceramics with X7R specifications were prepared at the calcination temperature of 1200 °C and the sintering temperature of 1240 °C, whose dielectric properties were ɛ _r ≥ 4500, Δɛ _r/ɛ _r25 ≤ ± 10%(−55∼125 °C), tanδ ≤ 0.012(25 °C), respectively.     

Dielectric, elastic, anelastic and conductivity behaviour of ferroelectromagnetic composites, Ni0·5Zn0·5Fe1·95O4?δ + Ba0·8Pb0·2TiO3

Ferroelectromagnetic composites with compositions, X Ni_0·5Zn_0·5Fe_1·95O_4−δ + (1 − X) Ba_0·8Pb_0·2TiO₃, in which X varies as 0, 0·005, 0·010, 0·015, 0·020, 0·040, 0·060, 0·080 and 1 in mole %, were prepared by conventional ceramic double sintering process. The presence of two phases was confirmed by X-ray diffraction. The temperature variation of dielectric constant, ɛ′, dielectric loss, tan δ, d.c. conductivity, a.c. conductivity, elastic and anelastic behaviour of ferrite-ferroelectric composites were studied in the temperature range 30–350°C. The a.c. conductivity measurements on these composites in the frequency range 100 Hz-1 MHz at room temperature reveal that the conduction mechanism is due to small polaron hopping. The dielectric and elastic data were discussed in the light of phase transitions.     

Ferroelectric phase transition in Ba5RTi3Nb7O30 [R=Nd, Eu, Gd] ceramics

Polycrystalline samples of Ba₅RTi₃Nb₇O₃₀ [R=Nd, Eu, Gd], were prepared using high-temperature solid-state reaction technique. Preliminary X-ray structural analysis of the compounds shows the formation of single phase compounds (orthorhombic crystal system) at room temperature. Detailed studies of dielectric properties (ɛ, tanδ,σ) as a function of frequency (400 Hz to 10 kHz) and temperature (30° to 380°C) show that these compounds exhibit diffuse ferroelectric phase transition.     

Structural and dielectric properties of Li2O–ZnO–BaO–B2O3–CuO glasses

Glass samples of the system (15Li₂O–30ZnO–10BaO–(45 − x)B₂O₃–xCuO where x = 0, 5, 10 and 15 mol%) were prepared by using the melt quenching technique. A number of studies, viz. density, differential thermal analysis, FT-IR spectra, a.c. conductivity and dielectric properties (constant εφ, loss tan δ, a.c. conductivity, σ_ac, over a wide range of frequency and temperature) of these glasses were carried out as a function of copper ion concentration. The analysis of the results indicate that the density increases while molar volume decreases with increasing of copper content indicates structural changes of the glass matrix. The glass transition temperature, T _g, and crystallization temperature, T _c, increase with the variation of concentration of CuO referred to the growth in the network connectivity in this concentration range, while glass-forming ability parameter (T _c − T _g) decreases with increasing CuO content, indicates an increasing concentration of copper ions that take part in the network-modifying positions. The FT-IR spectra evidenced that the main structural units are BO₃, BO₄, and ZnO₄. The structural changes observed by varying the CuO content in these glasses and evidenced by FTIR investigation suggest that the CuO plays a network modifier role in these glasses while ZnO plays the role of network formers. The dielectric constant decreased with increase in temperature and CuO content. The variation of a.c. conductivity with the concentration of CuO passes through a maximum at 5 mol%. In the high temperature region, the a.c. conduction seems to be connected with the mixed conduction viz., electronic conduction and ionic conduction.     

Development and characterization of a high dielectric constant paste based on BaTiO3 for use in thick-film capacitors

Results of measurements on a thick-film capacitor based on a paste of mixed ferroelectric phases made out of crystallization from a glassy phase are presented. This material can be used as a high dielectric constant paste for designing capacitors in hybrid circuits. The tanδ is observed to decrease with rise in temperature.     

Microwave properties of vanadium borate glasses

A.c. conductivity, dielectric constant and loss, and variation with temperature (302–373 K) for four different compositions of V₂O₅-B₂O₃ glasses were reported at 9.586 GHz microwave frequency. The quality factor (Q) and attenuation factor (α being the important parameters in the microwave range of applications were also studied. The change in the dielectric constant and loss was observed with composition of V₂O₅. The maximum loss was found to be at 15V₂O₅ mol‰ The peak was observed in loss with temperature.     

New Pb-Based 1222 Cuprates, (Pb0.5B0.5)Sr2(RE2−x−y Ce x Sr y )Cu2O z (RE = Pr, Nd, Sm, Eu, Gd, Dy, Ho, Er, Tm, Yb, and Y)

New Pb-based layered cuprates with the 1222 structure have been synthesized in the (Pb_0.5B_0.5)Sr₂ (RE_2−x−y Ce _x Sr _y )Cu₂O _z (RE = Pr, Nd, Sm, Eu, Gd, Dy, Ho, Er, Tm, Yb, and Y) systems. The almost-single-phase samples in the systems can be obtained for a nominal composition of x=0.7 and y=0.1. The crystal structure of the samples has a tetragonal symmetry, the lattice parameters of a and c are increasing with increasing the ionic radius of RE element. Despite treatment under high O₂ pressure of 100 atm, the samples are semiconductors with the transport process characteristic of three-dimensional variable range hopping conduction.     

Relative permittivity and dielectric loss tangent of substrate materials for high-Tc superconducting film

We measure the relative permittivity _r and dielectric loss tangent tan of substrate materials for high-T _c superconducting films at 18–300 K and at 5–10 GHz using the cavity-resonator method. The materials measured are single crystals of MgO, LaAlO₃, YAlO₃, LaSrGaO₄, NdGaO₃, sapphire, and ZrO₂ ceramic. The _r values are 10–30 and become almost constant below about 50 K. The tan values decrease with decreasing temperature and are below 1×10^–5 at 77 K except for those of NdGaO₃ and ZrO₂ ceramic. This suggests that the tan values of MgO, LaAlO₃, YAlO₃, LaSrGaO₄, and sapphire do not limit the quality factors of microwave passive components fabricated using high-T _c superconducting films. It is also demonstrated that the tan of the substrate material is strongly affected by impurities.     

Dielectric properties of SrTiO3 single crystals subjected to high electric fields and later irradiated with X-rays orγ-rays

The dielectric constant (K), loss (tanδ), and hence conductivity (σ) of SrTiO₃ single crystals have been measured in the frequency region 10²–10⁷ Hz and in the temperature range 30°–350° C. Quenching, subjecting the crystals to high electric fields (a.c. or d.c.) and X-ray orγ-ray irradiation, or a combination of these treatments, is found to bring about interesting changes in these properties. An attempt is made to understand the results.     

Electrical properties and scaling behaviour of Sm<Superscript>3 + </Superscript> doped CaF<Subscript>2</Subscript>-bismuth borate glasses

The electrical properties for 20Bi₂O₃–60B₂O₃ (20−x)–CaF₂–xSm₂O₃ glasses (0 ≤ x ≤ 2) were measured in the temperature range 297 K up to 629 K and in the frequency range 0·1–100 kHz. The d.c. and a.c. conductivity values and the dielectric loss (tan δ) values were found to increase with increasing Sm₂O₃ content, whereas the activation energy of conductivities and the dielectric constant decreased. These results were attributed to the introduction of the rare earth ions; promote the formation of a high number of non-bridging oxygen atoms, which facilitate the mobility of charge carriers. The frequency dependence of the a.c. conductivity follows the power law σ _ac(ω) = Aω ^s . The frequency exponent (s) values (0·64 < s < 0·8) decrease with increasing temperature. This suggested that the a.c. conduction mechanism follows the correlated barrier hopping model (CBH). The dielectric constant (ε ^′) and dielectric loss (tan δ values) were found to increase with increasing temperature and increasing Sm₂O₃ concentration in the glass. The a.c. conductivities as a function of frequency at different temperatures of a given glass superimposed onto a master curve (Roling scaling model). Furthermore, we have performed to scale the data as a function of composition. Two master curves were obtained, which suggested that there are differences in dominant charge carriers between glasses having Sm₂O₃ concentration ≥1 and glass of Sm₂O₃ concentration <1.     

Studies of structural and electrical properties of Pb(Li1/4Eu1/4Mo1/2)O3 ceramics

Polycrystalline sample of Pb(Li_1/4Eu_1/4Mo_1/2)O₃ was prepared by usual ceramic route. X-ray diffraction, SEM and EDAX were used to check the formation, homogeneity and elements present in the compound. The measurement of dielectric constant (ɛ), dielectric loss (tanδ), hysteresis loop parameters (e.g. spontaneous polarization) as function of frequency and temperature suggest that the compound is a ferroelectric one and has a ferro-paraelectric phase transition at 112 ± 2°C. The measurement of dc resistivity both as function of biasing electric field and temperature of the compound suggests that the compound has negative temperature coefficient (NTC) of resistance above 100°C.     

Variation of electrical properties in sepiolite during dehydration

The dielectric constant (K), loss (tanδ) andac conductivity of a sepiolite sample have been measured as a function of frequency in the range 10²-10⁷ Hz and in the temperature region 30–400°C. Thedc conductivities of hot pressed pellets were measured in the temperature range 30–550°C.K and tanδ of these samples decrease with increasing frequency. Results of these measurements have been correlated with the structural transformation accompanying dehydration, making use ofdta, ir and x-ray data. The moderately large value of activation energy (∼ 2·2 eV) in the intrinsic range suggests that the conduction process is most probably associated with ions.     

Effect of Mn substitutions on dielectric properties of high dielectric constant BaTiO<Subscript>3</Subscript>-based ceramic

The effects of Mn added during processing on the dielectric properties and microstructure of the BaTiO₃-based ceramic materials system were discussed. Experiments show that a proper content of Mn can significantly increase dielectric constant (ε) and reduce the dielectric loss (tanδ) in BaTiO₃-based X7R ceramic materials. The results attribute to the reaction: . When the system doped with 0.046mol% MnCO₃ was sintered at 1240 °C for 4 h, the ε, tanδ and TCC were 5800, 1.6%, 0 ± 10% at 1 KHz respectively.     

Oxygen-ion diffusion and electrical conduction of La2Mo2?2 x Fe x O9?δ systems

Based on the novel oxygen ion conductor La₂Mo₂O₉, a series of Fe-doped samples of La₂Mo_2−x Fe _x O_9−δ (x = 0, 0.025, 0.05, 0.1) was prepared by conventional solid-state reaction method. The structure, phase transition, oxygen ion diffusion and electrical conductivity were studied with X-ray diffraction (XRD), differential scanning calorimeter (DSC), direct current (dc) resistivity, and dielectric relaxation (DR) measurements. One DR peak associated with the short-distance diffusion of oxygen vacancies was observed in both temperature and frequency spectra. The activation energy for oxygen ion diffusion in Fe-doped La₂Mo₂O₉ samples was smaller than that in un-doped samples. Fe doping can increase the ionic conductivity of La₂Mo_2−x Fe _x O_9−δ samples as well as the ionic transference number in the temperature range from 680°C to 400°C in comparison with the un-doped samples, although the electronic conductivity slightly increases. It is found that because of the small solubility of Fe₂O₃ in La₂Mo₂O₉ (<5%), Fe doping cannot suppress the phase transition that occurred around 570°C, but 2.5% K doping at La site at the same time (e.g. in sample La_1.95K_0.05Mo_1.95Fe_0.05O_9−δ ) can completely suppress this phase transition and increase conductivity at lower temperatures.     

Effect of praseodymium substitution on the growth and properties of Y1−x Pr x Ba2Cu3O7−δ (o <x < 0·4) single crystals

In the present paper, a modified self-flux technique has been successfully employed for the growth of pure and praseodymium substituted (partially) large single crystals of high temperature superconducting Y_1−x Pr _x Ba₂Cu₃O_7−δ (x = 0·0,0·2,0·4). Typical sizes of the platy and bulky crystals of pure YBCO(123) material are ≈ 2 × 2 × 0·1 mm³ and 4 × 1 × 1 mm³, respectively. In case of Pr-substitution, the typical sizes of platy and bulky crystals of Y_0·8Pr_0·2Ba₂Cu₃O_7−δ and Y_0·6Pr_0·4Ba₂Cu₃O_7−δ materials are ≈ 2 × 3 × 0·1 mm³ and 5 × 1 × 1 mm³ and ≈ 1 × 1·5 × 0·1 mm³ and 7 × 0·2 × 0·1 mm³, respectively. The morphology and growth habit of the as-grown single crystals and the critical transition temperature (T _c) of the oxygenated crystals were found to depend on the Pr-content. Paper presented at the poster session of MRSI AGM VI, Kharagpur, 1995     

Correlation Between Superconducting Transition Temperature and Bond Length Ba–O in High-Tc Cuprate Superconductors

A well-known correlation of the maximum superconducting transition temperature (T _c,max) with ionic radius of rare earths and Y (R) in the series RBa₂Cu₃O_{7 –} is converted to the intrinsic correlation of T _c,max with bond length between Ba and oxygen in CuO₂ plane, being valid not only for RBa₂Cu₃O_{7 –} but also for other cuprate superconductors containing BaO plane such as HgBa₂CaCu₂O_{6 +} . It is pointed out that this correlation places a constraint on possible mechanisms inducing the high-T _c superconductivity.