Tribological Behavior of Mo5Si3-Particle-Reinforced Silicon Nitride Composites

The tribological behavior of Mo₅Si₃-particle-reinforced silicon nitride (Si₃N₄) composites was investigated by pin-on-plate wear testing under dry conditions. The friction coefficient of the Mo₅Si₃–Si₃N₄ composites and Si₃N₄ essentially decreased slowly with the sliding distance, but showed sudden increase for several times during the wear testing. The average friction coefficient of the Si₃N₄ decreased with the incorporation of submicrometer-sized Mo₅Si₃ particles and also as the content of Mo₅Si₃ particles increased. When the Mo₅Si₃–Si₃N₄ composites were oxidized at 700°C in air, solid-lubricant MoO₃ particles were generated on the surface layer. Oxidized Mo₅Si₃–Si₃N₄ composites showed self-lubricating behavior, and the average friction coefficient and wear rate of the oxidized 2.8 wt% Mo₅Si₃–Si₃N₄ composite were 0.43 and 0.72 × 10⁻⁵ mm³ (N·m)⁻¹, respectively. Both values were ∼30% lower than those for the Si₃N₄ tested in an identical manner.     

Design, Fabrication, and Characterization of Silicon Nitride Particle-Reinforced Silicon Nitride Matrix Composites by Chemical Vapor Infiltration

Silicon nitride particle-reinforced silicon nitride matrix composites were fabricated by chemical vapor infiltration (CVI). The particle preforms with a bimodal pore size distribution were favorable for the subsequent CVI process, which included intraagglomerate pores (0.1–4 μm) and interagglomerate pores (20–300 μm). X-ray fluorescence results showed that the main elements of the composites are Si, N, and O. The composite is composed of α-Si₃N₄, amorphous Si₃N₄, amorphous SiO₂, and a small amount of β-Si₃N₄ and free silicon. The α-Si₃N₄ transformed into β-Si₃N₄ after heat treatment at 1600°C for 2 h. The flexural strength, dielectric constant, and dielectric loss of the Si₃N_4(p)/Si₃N₄ composites increased with increasing infiltration time; however, the pore ratios decreased with increasing infiltration time. The maximum value of the flexural strength was 114.07 MPa. The dielectric constant and dielectric loss of the composites were 4.47 and 4.25 × 10⁻³, respectively. The present Si₃N_4(p)/Si₃N₄ composite is a good candidate for high-temperature radomes.     

Reaction-Bonding Preparation of Si3N4/MoSi2 and Si3N4/WSi2 Composites from Elemental Powders

Si₃N₄/MoSi₂ and Si₃N₄/WSi₂ composites were prepared by reaction-bonding processes using as starting materials powder mixtures of Si-Mo and Si-W, respectively. A presintering step in an At-base atmosphere was used before nitriding for the formation of MoSi₂ and WSi₂; the nitridation in a N₂-base atmosphere was followed after presintering with the total stepwise cycle of 1350°C × 20 h +1400°C × 20 h +1450°C × 2 h. The final phases obtained in the two different composites were Si₃N₄ and MoSi₂ or WSi₂; no free elemental Si and Mo or W were detected by X-ray diffraction.     

Dissolution Kinetics of β-Si3N4 in an Mg-Si-O-N Glass

The rate of dissolution of β-Si₃N₄ into an Mg-Si-O-N glass was measured by working with a composition in the ternary system Si₃N₄-SiO₂-MgO such that Si₂N₂O rather than β-Si₃N₄ was the equilibrium phase. Dissolution was driven by the chemical reaction Si₃N₄(c)+SiO₂( l )→Si₂N₂O(c). Analysis of the kinetic data, in view of the morphology of the dissolving phase (Si₃N₄) and the precipitating phase (Si₂N₂O), led to the conclusion that the dissolution rate was controlled by reaction at the crystal/glass interface of the Si₃N₄, crystals. The process appears to have a fairly constant activation energy, equal to 621 ±40 kJ-mol⁻¹, at T=1573 to 1723 K. This large activation energy is believed to reflect the sum of two quantities: the heat of solution of β-Si₃N₄ hi the glass and the activation enthalpy for jumps of the slower-moving species across the crystal/glass interface. The data reported should be useful for interpreting creep and densification experiments with MgO-fluxed Si₃N₄.     

Compressive Creep and Oxidation Resistance of an Si3N4 Material Fabricated in the System Si3N4-Si2N2O-Y2Si2O7

The compressive creep behavior and oxidation resistance of an Si₃N₄/Y₂Si₂O₇ material (0.85Si₃N₄+0.10SiO₂+0.05Y₂O₃) were determined at 1400°C. Creep re sistance was superior to that of other Si₃N₄ materials and was significantly in creased by a preoxidation treatment (1600°C /120 h). An apparent parabolic rate constant of 4.2 × 10⁻¹¹ kg²·m-⁴·s⁻¹ indicates excellent oxidation resistance.     

Densification and Mechanical Properties of Titanium Diboride with Silicon Nitride as a Sintering Aid

Titanium diboride (TiB₂) was hot-pressed at a temperature of 1800°C, and silicon nitride (Si₃N₄) was added as a sintering aid. The amount of Si₃N₄ that was added had a significant influence on the sinterability and mechanical properties of the TiB₂. When a small amount (2.5 wt%) of Si₃N₄ was added, the Si₃N₄ reacted with titania (TiO₂) that was present on the surface of the TiB₂ powder to form titanium nitride (TiN), boron nitride (BN), and amorphous silica (SiO₂). The elimination of TiO₂ suppressed the grain growth effectively, which led to an improvement in the densification of TiB₂. The formation of SiO₂ also was deemed beneficial for densification. The mechanical properties-especially, the flexural strength-were enhanced remarkably through these improvements in the sinterability and microstructure. On the other hand, when a large amount (greaterthan equal to5 wt%) of Si₃N₄ was added, the mechanical properties were not improved much, presumably because of the extensive formation of a glassy Si-Ti-O-N phase at the grain boundaries.     

Evaluation of Brazed Silicon Nitride Joints: Microstructure and Mechanical Properties

Sintered Si₃N₄ has been bonded to itself and to AISI 316 steel by the active-metal brazing route. A commercial Ag-35Cu-1.6Ti filler has been used with joining taking place during a 30 min hold at 850°C under vacuum. Si₃N₄/ Si₃N₄ joints have been produced with strength distribution (average bend strength = 773.5 MPa, Weibull modulus = 11.2) similar to that of the monolithic ceramic. Direct brazing of the Si₃N₄ to AISI 316 steel was unsuccessful. However, reliably strong (bend strength of 250–400 MPa) ceramic/ steel joints with 20 × 20 mm² cross sections were fabricated by using Cu, Mo, or Nb interlayers. The most potent inter-layer used in this work was Mo, whose coefficient of thermal expansion matches best that of the ceramic.     

Microstructure and Properties of Self-Reinforced Silicon Nitride

Problems associated with manufacturing Si₃N₄/SiC-whisker composites have been overcome by developing selfreinforced Si₃N₄ with elongated β-Si₃N₄ grains formed in situ from oxynitride glass. This Si₃N₄–Y₂O₃–MgO–SiO₂–CaO-based material has a flexure strength >1000 MPa and fracture toughness >8 MPa·m^½. The optimum combination of mechanical properties has been obtained with Y₂O₃:MgO ratios ranging from 3:1 to 1:2, CaO contents ranging from 0.1 to 0.5 wt%, and Si₃N₄ contents between 90 and 96 wt%.     

Mechanical Properties of Si3N4-SiC Three-Layer Composite Materials

The effects of microstructure and residual stress on the mechanical properties of Si₃N₄-based three-layer composite materials were investigated. The microstructure of each layer was controlled by the addition of two differently sized silicon carbides: fine SiC nanoparticles (∼200 nm) or relatively large SiC platelets (∼20 µm). When the SiC nanoparticles were added, the average grain size of Si₃N₄ was reduced because of the inhibition of grain growth by the particles. On the other hand, when the SiC platelets were added, the microstructure of Si₃N₄ was not much changed because of the large size of the platelets. Three-layer composites were fabricated by placing the Si₃N₄/SiC-nanoparticle layers on the surface of the Si₃N₄/SiC-platelet layer. The residual stress was controlled by varying the amount of SiC added. The mechanical properties of three-layer composites with various combinations of microstructure and residual stress level were investigated.     

Control of Composition and Structure in Laminated Silicon Nitride/Boron Nitride Composites

Based on a biomimetic design, Si₃N₄/BN composites with laminated structures have been prepared and investigated through composition control and structure design. To further improve the mechanical properties of the composites, Si₃N₄ matrix layers were reinforced by SiC whiskers and BN separating layers were modified by adding Si₃N₄ or Al₂O₃. The results showed that the addition of SiC whiskers in the Si₃N₄ matrix layers could greatly improve the apparent fracture toughness (reaching 28.1 MPa·m^1/2), at the same time keeping the higher bending strength (reaching 651.5 MPa) of the composites. Additions of 50 wt% Al₂O₃ or 10 wt% Si₃N₄ to BN interfacial layers had a beneficial effect on the strength and toughness of the laminated Si₃N₄/BN composites. Through observation of microstructure by SEM, multilevel toughening mechanisms contributing to high toughness of the laminated Si₃N₄/BN composites were present as the first-level toughening mechanisms from BN interfacial layers as crack deflection, bifurcation, and pull-out of matrix sheets, and the secondary toughening mechanism from whiskers in matrix layers.     

Formation of Reaction-Bonded Silicon Nitride from Silane-Derived Silicon Powders: Nucleation and Growth Mechanisms

The nucleation and growth of Si₃N₄ on silane-derived Si powders was investigated with transmission electron microscopy and FTIR spectroscopy. Thermogravimetric analysis (TGA) was also used to monitor the process through different stages of the reaction. The FTIR and TEM results provide clear evidence that the nucleation of crystalline Si₃N₄ coincides with the onset of rapid nitridation. Electron diffraction indicates that Si₃N₄ forms heteroepitaxially on the Si powder surfaces, with Si (111) || Si₃N₄(0001) and Si     || Si₃N₄     . Also, flat interfaces between the Si and Si₃N₄ (compared to the initial spherical surface of the Si powders) indicate that a significant rearrangement of the particle surface occurs during the initial stages of nitridation. The results reported here demonstrate that the rapid, low-temperature nitridation observed with silane-derived powders is possible because the Si/vapor surfaces are not covered with a continuous Si₃N₄ product layer. The measured nitridation rates are comparable to Si evaporation rates, which suggests that Si vaporization is rate limiting. This is significantly different from conventional RBSN, where nitridation is limited by solid-state diffusion through a Si₃N₄ product layer.     

Relationship between Microstructure and Mechanical Performance of a 70% Silicon Nitride–30% Barium Aluminum Silicate Self-Reinforced Ceramic Composite

The abnormal grain growth of β-Si₃N₄ was observed in a 70% Si₃N₄–30% barium aluminum silicate (70%-Si₃N₄–30%-BAS) self-reinforced composite that was pressureless-sintered at 1930°C; Si₃N₄ starting powders with a wide particle-size distribution were used. The addition of coarse Si₃N₄ powder encouraged the abnormal growth of β-Si₃N₄ grains, which allowed microstructural modification through control of the content and size distribution of β-Si₃N₄ nuclei. The mechanical response of different microstructures was characterized in terms of flexural strength, as well as indentation fracture resistance, at room temperature. The presence of even a small amount of abnormally grown β-Si₃N₄ grains improved the fracture toughness and minimized the variability in flexural strength.     

Influence of Planetary High-Energy Ball Milling on Microstructure and Mechanical Properties of Silicon Nitride Ceramics

The influence of ball-milling methods on microstructure and mechanical properties of silicon nitride (Si₃N₄) ceramics produced by pressureless sintering for a sintering additive from MgO–Al₂O₃–SiO₂ system was investigated. For planetary high-energy ball milling, the mechanical properties of Si₃N₄ ceramics were evidently improved and a homogeneous microstructure developed. In contrast, some exaggerated elongated grains were developed due to the local enrichment of sintering additives in the specimen prepared by general ball milling. For Si₃N₄ ceramics produced by planetary ball milling, flexure strength of 1.06 GPa, Vickers hardness of 14.2 GPa, and fracture toughness of 6.6 MPa·m^0.5 were achieved. The differences in the mechanical properties of Si₃N₄ ceramics produced by different processing seem to arise mainly from the changes in microstructural homogenization and sinterability. The planetary high-energy ball-milling process provides a good route to mix starting powders for developing ceramics with uniform microstructure and promising mechanical properties.     

Carbothermic Synthesis of Monodispersed Spherical Si3N4/SiC Nanocomposite Powder

The synthesis and structure of a monodispersed spherical Si₃N₄/SiC nanocomposite powder have been studied. The Si₃N₄/SiC nanocomposite powder was synthesized by heating under argon a spherical Si₃N₄/C powder. The spherical Si₃N₄/C powder was prepared by heating a spherical organosilica powder in a nitrogen atmosphere and was composed of a mixture of nanosized Si₃N₄ and free carbon particles. During the heat treatment at 1450°C, the Si₃N₄/C powder became a Si₃N₄/SiC composite powder and finally a SiC powder after 8 h, while retaining its spherical shape. The composition of the Si₃N₄/SiC composite powder changed with the duration of the heat treatment. The results of TEM, SEM, and selected area electron diffraction showed that the Si₃N₄/SiC composite powder was composed of homogeneously distributed nanosized Si₃N₄ and SiC particles.     

Reaction and Formation of Crystalline Silicon Oxynitride in Si–O–N Systems under Solid High Pressure

Oxidized amorphous Si₃N₄ and SiO₂ powders were pressed alone or as a mixture under high pressure (1.0–5.0 GPa) at high temperatures (800–1700°C). Formation of crystalline silicon oxynitride (Si₂ON₂) was observed from amorphous silicon nitride (Si₃N₄) powders containing 5.8 wt% oxygen at 1.0 GPa and 1400°C. The Si₂ON₂ coexisted with β-Si₃N₄ with a weight fraction of 40 wt%, suggesting that all oxygen in the powders participated in the reaction to form Si₂ON₂. Pressing a mixture of amorphous Si₃N₄ of lower oxygen (1.5 wt%) and SiO₂ under 1.0–5.0 GPa between 1000° and 1350°C did not give Si₂ON₂ phase, but yielded a mixture of α,β-Si₃N₄, quartz, and coesite (a high-pressure form of SiO₂). The formation of Si₂ON₂ from oxidized amorphous Si₃N₄ seemed to be assisted by formation of a Si–O–N melt in the system that was enhanced under the high pressure.     

Role of Si2N2O in the Passive Oxidation of Chemically-Vapor-Deposited Si3N4

The results of two-step oxidation experiments on chemically-vapor-deposited Si₃N₄ and SiC at 1350°C show that a correlation exists between the presence of a Si₂N₂O interphase and the strong oxidation resistance of Si₃N₄. During normal oxidation, k _p for SiC was 15 times higher than that for Si₃N₄, and the oxide scale on Si₃N₄ was found by SEM and TEM to contain a prominent Si₂N₂O inner layer. However, when oxidized samples are annealed in Ar for 1.5 h at 1500°C and reoxidized at 1350°C as before, three things happen: the oxidation k _p increases over 55-fold for Si₃N₄, and 3.5-fold for SiC; the Si₃N₄ and SiC oxidize with nearly equal k _p's; and, most significant, the oxide scale on Si₃N₄ is found to be lacking an inner Si₂N₂O layer. The implications of this correlation for the competing models of Si₃N₄ oxidation are discussed.     

Effect of Sintering Additives on Microstructure and Mechanical Properties of Porous Silicon Nitride Ceramics

Porous silicon nitride (Si₃N₄) ceramics with about 50% porosity were fabricated by pressureless sintering of α-Si₃N₄ powder with 5 wt% sintering additive. Four types of sintering aids were chosen to study their effect on the microstructure and mechanical properties of porous Si₃N₄ ceramics. XRD analysis proved the complete formation of a single β-Si₃N₄ phase. Microstructural evolution and mechanical properties were dependent mostly on the type of sintering additive. SEM analysis revealed the resultant porous Si₃N₄ ceramics as having high aspect ratio, a rod-like microstructure, and a uniform pore structure. The sintered sample with Lu₂O₃ sintering additive, having a porosity of about 50%, showed a high flexural strength of 188 MPa, a high fracture toughness of 3.1 MPa·m^1/2, due to fine β-Si₃N₄ grains, and some large elongated grains.     

Interface Nanostructure of Brazed Silicon Nitride

Nanomorphologies and crystallographic orientations of the brazed interface of silicon nitride (Si₃N₄) were analyzed via high-resolution transmission electron microscopy. When Si₃N₄ was brazed using an Ag-Cu-Ti alloy, titanium nitride (TiN) nanoparticles were formed adjacent to the ceramic as reaction products, and these nanoparticles were commonly accompanied by C-phase material. The structure of Si₃N₄/TiN interface was wavy on an atomic scale, which was considered to provide anchoring points that offered high mechanical strength. The TiN nanoparticles extended along the [0001] axis of Si₃N₄. The orientation relationship between TiN and ß-Si₃N₄ was, as determined from the observed lattice images, that the [110] direction of TiN was parallel to the [0001] direction of Si₃N₄. The nature of the crystallographic relationships and interface nanomorphologies were also discussed.     

Crystal Structure of Lu4Si2O7N2 Analyzed by the Rietveld Method Using the Time-of-Flight Neutron Powder Diffraction Pattern

The crystal structure of a lutetium silicon oxynitride (Lu₄Si₂O₇N₂) was analyzed by the Rietveld method using time-of-flight (TOF) neutron powder diffraction data. The compound crystallizes in a monoclinic cell, space group P 2₁/ c (No. 14-1) with a = 7.4243(1), b = 10.2728(1), c = 10.6628(1) Å, and β= 109.773(1)° at 297 K. One nitrogen atom in Lu₄Si₂O₇N₂ occupies the bridging site between the two Si atoms, and the other one is statistically situated at the terminal sites of Si₂O₅N₂ ditetrahedra. In the local structure, Si₂O₅N₂ ditetrahedra consist of SiO₃N and SiO₂N₂ tetrahedral units sharing the N atom. Lu atoms are in sixfold, sevenfold (×2) and eightfold coordinations of O/N atoms. X-ray powder diffraction data were also analyzed with the model obtained by the neutron diffraction.     

Molten-Salt Corrosion of Silicon Nitride: I, Sodium Carbonate

Corrosion of Si₃N₄ under thin films of Na₂CO₃ was investigated at 1000°C. Pure Si₃N₄ and Si₃N₄ with various additives were examined. Thermogravimetric analysis and morphology observations lead to the following detailed reaction mechanism: (I) decomposition of Na₂CO₃ and formation of Na₂SiO₃, (II) rapid oxidation, and (III) formation of a protective silica layer below the silicate and a slowing of the reaction. For Si₃N₄ with Y₂O₃ additions, preferential attack of the grain-boundary phase occurred. The corrosion of pure Si and SiC was also studied for comparison to Si₃N₄. The corrosion mechanism generally applies to all three materials. Silicon reacted substantially faster than Si₃N₄ and SiC.