硅中浅杂质A~+态远红外Fourier光谱

文中报导了硅中受主杂质A~+态的远红外光电导Fourier光谱的实验结果,并提出了解释实验结果的A_2~+A~-模型。     

硅中量子产额增益谱的计算(英文)

This paper presents theoretically calculated results of the quantum yield of silicon, which are in better agreement with experimental measurements than other published results. Considering the geometry of the interaction between the impact particle and the target particle on the base of classical view, we have developed a new expression for impact ionization. The distribution probability of carriers generated by photons has been given in this paper with fine results.     

中子辐照硅中少子寿命的衰退(英文)

Disordered regions(DR) produced by neutron irradiation are highly effective for the degradation of minority carrier lifetime in silicon. In this paper we analyze the properties of the DR in detail, calculate the occupancies of defect states and the bending height of the energy band by means of the effectively generalizing of Schokly-Read-Hall statistical recombination theory to the DR, and present the self-consistent formulas for calculating degradation of minority carrier lifetime in the region, including the influences of defect concentration, band bending height, quasi -Fermi level as well as excess carrier density on the minority carrier lifetime. Finally, we make a comparision between the calculation results from the disordered region model and the point defect model and experimental results with detailed discussions.     

硅中Mo-B络合物性质的理论研究(英文)

Recently, considerabl experimental studies have become available for the 3d transition metal-group ⅢA acceptor complex pair in silicon. Our experimental investigations on 4d transition metal impurities in silicon showed that the interstitial 4d atoms are also easy to move in silicon and to form complexes with other point defects. We have studied the electronic states of the substitutional boron-interstitial molybdenum complex in silicon. The self consistent field calculations were performed by using the SW-Xα theory within the framework of the Watson-sphere-terminated molecular-cluster method. Based on the obtained charge distribution of the system, there is no clear indication to show a transfer of one electron from Mo to B as assumed in the ionic model which has been generally accepted in describing the interaction between a substitutional ⅢA group acceptor atom and an interstitial TM atom.     

硅中氢杂质的研究

介绍了硅中氢杂质的基本性质，氢杂质和氧原子的作用，以及氢原子对其它杂质和缺陷电学性能的影响，几时指出了目前研究中有待解决的问题。     

硅中氢杂质的研究

介绍了硅中氢杂质的基本性质 ,氢杂质和氧原子的作用 ,以及氢原子对其它杂质和缺陷电学性能的影响 ,同时指出了目前研究中有待解决的问题。     

量子棒中杂质极化子的内部激发态

通过坐标变换把量子棒的哈密顿量由椭球边界变为球形边界.采用线性组合算符和么正变换方法研究了量子棒中弱耦合杂质极化子的第一内部激发态能量、激发能量和从第一内部激发态到基态跃迁频率随量子棒的横向和纵向有效受限长度、库仑束缚势、椭球的纵横比的变化关系.结果表明:它们随库仑束缚势的增加而增大,随纵横比和有效受限长度的增加而减少.表现出量子棒珍奇的量子尺寸限制效应.     

钴溅射在硅中引进的深能级(英文)

Co has already been shown to have promissing properties with respect to self-aligned silicide technology. In view of its importance, is is essential to understand the behaviour of Co in Si. The purpose of this work is to report a detailed study of the deep level behaviour of Co in Si. Deep levels in N-type and P-type, due to Co-sputtering and RTP(Rapid Thermal Processing) at various temperature, were investigated by using DLTS technique. It has been found that Co-related defect levels at (Ec-0.20eV), (Ec-0.34eV), (Ec-0.36eV), (Ec-0.41eV) and (Ec-0.45eV) are produced only for N-type material. The concentration of defects is rather small and ranges from 2×1010 to 1×1011 cm-3. These defect levels can be attributed to Co atoms or to Co in combination with RTP-step and Co-defect complexes.     

SiC中受主激发态对杂质电离的影响

对Al掺杂4H-SiC中激发态对杂质电离的促进作用,与温度和掺杂浓度的关系进行了系统研究.发现促进作用随掺杂浓度的提高而增强,并且温度越高,随掺杂浓度的增加提高得越迅速;促进作用随温度的变化存在一峰值,并且随掺杂浓度的提高,峰值位置逐渐向温度高的方向移动.研究了激发态数目与杂质电离关系,发现当温度或掺杂浓度很低时(T＜200 K或NA＜1.0×1014 cm-3),无需考虑激发态对电离的影响;当温度很高时(＞800 K),只需考虑较少的激发态(一般3个即可),而在其他情况则需考虑的激发态多一些.     

低温下硅的光伏效应(英文)

<正> We diffused gold into Si wafers of good quality (Ln≥324μm) and obtained 6 samples with NAa = 7.94×1012 -6.96×1015cm-3. The minority carrier lifetime of each sample was measured with the photovoltage method and compareed with the calculated value, showing that maximum deviation is 4 times between them.     

引入杂质激发态因素的SiC MOSFET反型层电荷模型

引入杂质激发态因素,建立新的SiC MOSFET反型层电荷模型.利用数值方法求解一维泊松方程,研究激发态对反型层电荷的影响.结果显示,在杂质激发态的作用下,反型层的电子面密度降低,并且杂质激发态主要影响SiC MOSFET的亚阈区特性.杂质激发态对SiC MOSFET反型层电荷的影响依赖于温度、掺杂浓度和杂质电离能.存在激发态影响最大的温度点,且其随掺杂浓度和电离能的增加而提高.     

用高灵敏度激光腔内吸收光谱方法研究分子高振动态的高分辨光谱

描述了激光腔内吸收光谱的工作原理并通过建立的光谱仪对这种方法的可靠性作了探讨.实验表明光谱仪的探测灵敏度极限可达10～(-10)cm～(-1).用该光谱仪测量和分析了HDO分子的(500)带高分辨振转光谱,拟合得到了振转参数.     

硅/硅直接键合的界面杂质

用SIMS和扩展电阻测试研究了常规p~+/n和n~+/n硅/硅键合界面的杂质O,H,C,N,Fe,Ni以及掺杂原子B,P的行为。经1 100℃ 1小时键合后,界面的H消失;O,C,N稳定;重金属杂质Fe,Ni仍在界面附近;掺杂原子B,P的扩散小于2μm。     

代位金属原子在含吸杂源硅中的扩散(英文)

The presence of metallic contaminations such as Au, Cu, Ti, Ni, etc. during silicon device processing often causes junction breakdown and soft reverse voltage breakdown. It is an important technique to getter the metallic atoms from certain regions by localizing them in other parts in the wafer.Based on the conclusions summarized by Ourmazd that gettering may be understood in terms of two basic processes: the interaction of self-intersti-tials with impurities and the influence of strain in enhancing impurity drift, a series of diffusion equations has bsen set up to describe the diffusion of substitutional metallic atoms in Si with getters and has been used to calculate the Au diffusion in Si with P-doped and Ar+-implanted backside getters. The theoretical results ars in reasonable agreement with the reported experimental data.     

激发态上钠原子的相干囚禁

对Ｖ型三能级原子系统与双激光场同时共振产生的能级相干效应进行了研究。计算了各能级上的粒子数分布，实验观测到在相干驻波场中的钠原子被囚禁在激发态上的现象。对比和分析有无干涉效应存在时３Ｓ１／２，Ｆ＝２态上布居数的变化情况。     

光激励微型硅谐振器研究

本文介绍了一种可以形成新型光纤传感器的微型硅谐振器，其基本原理是微型硅谐振器在调制光的光热作用下产生谐振，被测物理参数使谐振频率发生改变．文中给出了用单晶硅制作桥型微谐振器的方法，研究了微型谐振器在光激励下产生振动的机理．     

Photothermal Activation of Shallow Dopants Implanted in Silicon

Dopant impurities were implanted at high dose and low energy (10¹⁵ cm⁻², 0.5–2.2 keV) into double-side polished 200 mm diameter silicon wafers and electrically activated to form p–n junctions by 10 s anneals at temperatures of 1,025, 1,050, and 1,075°C by optical heating with tungsten incandescent lamps. Activation was studied for P, As, B, and BF₂ species implanted on one wafer side and for P and BF₂ implanted on both sides of the wafer. Measurements included electrical sheet resistance (Rs) and oxide film thickness. A heavily boron-doped wafer, which is optically opaque, was used as a hot shield to prevent direct exposure to lamp radiation on the adjacent side of the test wafer. Two wafers with opposing orientations with respect to the shield wafer were annealed for comparison of exposure to, or shielding from, direct lamp illumination. Differences in sheet resistance for the two wafer orientations ranged from 4% to 60%. n-Type dopants implanted in p-type wafers yielded higher Rs when the implanted surface was exposed to the lamps, as though the effective temperature had been reduced. p-Type dopants implanted in n-type wafers yielded lower Rs when the implanted surface was exposed to the lamps, as though the effective temperature had been increased. Effective temperature differences larger than 5°C, which were observed for the P, B, and BF₂ implants, exceeded experimental uncertainty in temperature control.     

二项式叠加态与激发相干叠加态的产生

考虑原子与腔场在大失谐悟上的相互作用，本文研究了如何利用态选择测量技术来产生二项式叠加态和激发相干叠加态，这两种量子加态在一定极限或参数选择下都可变成客观可区分量子叠加态。     

On the Possibility of Ramsey Interference in Germanium Doped with Shallow Impurities

Semiconductors - The dynamics of the formation and decay of coherent states of shallow impurity centers in crystalline germanium resonantly excited by a pair of laser pulses, following one another...     

MOCVD生长纯度GaAs中起支配作用的剩余浅杂质研究

<正> 一、引言 众所周知,高纯外延材料是器件制作的基础。但是,在实际工艺过程中,尽管采用高纯源,总不免有不同种类、不同含量的杂质进入外延层。这就是非有意掺杂。MOCVD生长纯度GaAs中非有意掺杂元素主要来源于TMG。在AsH_3-TMG体系MOCVD生长GaAs中,非有意掺杂载流子浓度随As/Ga比变化,并存在由p至n型导电类型的变化。由于AsH_3分压成为导电类型变化的界限,那末,在外延层中起支配作用的电活性杂质就是起着两性杂质作用的Ⅳ族元素。本文根据对不同纯度TMG的比较,结合对外延层的理化分析,认为起支配作用的是C和Si。文中建立了简单的热力学模型,用实验数据确定平衡常数,获得了载流子浓度和类型随输入As/Ga比变化的解析公式,并与实验结果符合良好。生长的GaAs电参数为:N=9×10~(14)cm~(-3),μ=5100cm~2/V·S。