回味经典——SPENDOR SP100R扬声器

自上个世纪80年代末90年代初音响逐渐为更多的中国消费者接受以来，已经有越来越多的音响品牌开始进入中国市场，其中不乏成绩骄人者。这中间来自英国的多个音响品牌甚为发烧友所喜欢，诸如Mission（美声）、B＆W、Wharfedale（乐富豪）、AudioLab、Linn（莲）、Cyrus（赛乐士）、Ruark（威武）、Tannoy（天朗）、Harbeth（雨后初晴）、ProAc（贵族）、Cambridge Audio（剑桥）、Roksan（乐圣）、KFF、AE、Naim（名）、Quad（国都）、Spendor（思奔达）等。其中Spendor是最让笔者难以忘怀的品牌，直到今天笔者亦以为该品牌最能称为“英国声”的代表。     

F原子与胺类分子反应的可见化学发光研究

在交叉分子束装置上，进行了F原子与胺类分子（甲胺、乙胺、正丙胺、正丁胺）反应的可见化学发光实验研究，依次观察到了HF（3，0）、（4，0）、（5，1）、（6，2）、（7，3）、（8，4），HCF（A－X）和CN（A，B－X）的发射光谱．除F原子与甲胺的反应外，其余反应还观察到TCH（A－X）发射谱．依据产物光谱强度随反应物和反应压力的变化，对F原子与胺类分子反应的动力学过程进行了分析．     

第二代ConnX基带DSP引擎，满足LTE／4G无线手机及基站算法需求

Tensilica发布第二代基带引擎ConnX BBE16，用于LTE（长期演进技术）及4G基带SoC（片上系统）的设计。ConnX BBE16的16路MAC（乘数累加器）架构经过特别优化，以满足无线DSP（数字信号处理）算法需求，包括：OFDM（正交频分复用）、FFT（快速傅氏变换）、FIR（有限脉冲响应）、IIR（无限脉冲响应）以及矩阵运算。     

05年医疗芯片市场超20亿美元，年复合增长11％

市场调查机构iSuppli报告显示，2005年第二季（Q2）全球NAND型快闪存（Flash）市场产值达到22．72亿美元，比Ql增长10．3％，更比2004年Q2增长46．2％，前7大供应商分别为三星电子Samsung Electronics）、东芝（Toshiba）、现代（Hynix）、瑞萨（Renesas）、意法半导体（STM）、英飞凌（Infineon）与美光（Micron），囊括Q2全球NAND型Flash市场占有率．     

世界寻呼机市场扑朔迷离

悉，按寻呼机使用总数排列，美国排名第一，中国内地居世界第二位，第三至第八全分别是日本、韩国、台湾、香港、加拿大和新加坡。按寻呼机普及率排列，新加坡居首位（3％），其次是香港（20％）、韩国（19％）、台湾（14％）、美国（12％）、科威特（10．5％）、阿联酋（9％）     

肝癌患者血清瘦素表达及其临床意义

目的探讨肝癌患者血清瘦素（Leptin）的变化及其意义。方法研究分肝癌组（104例）、肝癌术后组（86例）及正常对照组（100例），采用全自动生化分析仪检测各组血清中总胆固醇（TC）、甘油三酯（TG）、碱性磷酸酶（ALP）及总胆红素（STB）等生化指标并用放射免疫法检测Leptin及甲胎蛋白（AFP）。结果与正常对照组相比，肝癌组血清TG、TC、ALP、STB、Leptin、AFP及肝癌术后组TG、Leptin、AFP含量均显著升高（P〈0．05），同时与肝癌组相比，肝癌术后组Leptin、AFP含量明显降低（P〈O．05），TC、TG、ALP、STB含量无明显改变。Leptin与TC、TG呈正相关，而与AFP、ALP、STB无相关性。结论Leptin参与肝癌的发生发展，其作用机制可能与促进肝癌组织新生血管形成有关。     

丝网印刷出现气泡的原因

丝网印刷出现气泡（矽眼）现象的原因多样化，但最主要集中在胶头、钢缝。 油墨三个方面。下面举出几个最可能产生气泡（矽眼）的原因： （1）胶头形状不合适，太平或弧形不对。 （2）胶头中心点（最高点）印在图案上，形成空气排不出，产生气泡。 （3）胶头发粘、破损、油污引起胶头印刷不良。     

赤壁

投资号称超过6亿元人民币的《赤壁》无疑是今年最受期待的国产大制作影片之一，该片于去年4月开拍，整个拍摄过程历时8个半月，堪称目前为止投资规模最大的华语电影。同时，除了吴宇森担纲导演外，由梁朝伟（周瑜）、金城武（诸葛亮）、张丰毅（曹操）、林志玲（小乔）、张震（孙权）、胡军（赵云）、赵薇（孙尚香）等两岸三地著名影星组成的演员阵容也是极尽豪华，令这部影片创下了多个华语电影之最，早在影片开拍之前就已经成为万众瞩目的焦点。     

基于芴和2，4-二氟苯的寡聚物的合成与表征

为了对比不同分子结构的芴类寡聚物在光物理性质上的差异，将9，9-二（十二烷基）-芴（F1）和2，4-二氟苯硼酸通过Suzuki偶联反应合成并表征了一系列寡聚物：2．（2，4-二氟苯）-9，9-二（十二烷基）-芴（FF1）、2，7-二（2，4-二氟苯）-9，9-二（十二烷基）-芴（FF2）、二-（2-（2，4-二氟苯基）．9，9-二（十二烷基）-芴）-7-（2，4-二氟苯）-9，9-二（十二烷基）-芴（FF3）以及1-溴-3，5-二（2-（2，4-二氟苯）9，9-二（十二烷基）．芴）-苯（FF4）。依照F1，FF1，FF2和FF3的次序，由π-π跃迁导致的最大紫外吸收依次红移，而寡聚物FF4的最大紫外吸收相对于寡聚物FF3要蓝移，其薄膜的最大荧光发射相比于寡聚物FF3要红移。这说明分子的线形、支化结构和由此引起的聚集态结构的变化对其光物理性能都有重要影响。密度泛函理论计算和实验结果基本-致。通过光降解实验还发现含氟寡聚物具备较好的光稳定性。     

深圳地铁：中国第一个实现互联互通的地铁TETRA网络

运营概况 深圳市拥有一个庞大的城市地铁交通网络。截至2012年底，深圳地铁建有5条线路：罗宝线（1号线）、蛇口线（2号线）、龙岗线（3号线）、龙华线（4号线）以及环中线（5号线），呈网络化运营，全长共计178公里，为这个总人口数达到1322万人，     

Al/sub 2/O/sub 3/-Ge-on-insulator n- and p-MOSFETs with fully NiSi and NiGe dual gates

High-/spl kappa/ Al/sub 2/O/sub 3//Ge-on-insulator (GOI) n- and p-MOSFETs with fully silicided NiSi and germanided NiGe dual gates were fabricated. At 1.7-nm equivalent-oxide-thickness (EOT), the Al/sub 2/O/sub 3/-GOI with metal-like NiSi and NiGe gates has comparable gate leakage current with Al/sub 2/O/sub 3/-Si MOSFETs. Additionally, Al/sub 2/O/sub 3/-GOI C-MOSFETs with fully NiSi and NiGe gates show 1.94 and 1.98 times higher electron and hole mobility, respectively, than Al/sub 2/O/sub 3/-Si devices, because the electron and hole effective masses of Ge are lower than those of Si. The process with maximum 500/spl deg/C rapid thermal annealing (RTA) is ideal for integrating metallic gates with high-/spl kappa/ to minimize interfacial reactions and crystallization of the high-/spl kappa/ material, and oxygen penetration in high-/spl kappa/ MOSFETs.     

Wideband frequency and in situ characterization of ultra thin ZrO2 and HfO2 films for integrated MIM capacitors

High-κ dielectrics are promising candidates to increase capacitor integration densities but their properties depend on manufacturing process and frequency because relaxation and resonance mechanisms occur. Complementary characterization protocols are needed to analyze high-κ insulator behaviour from DC to microwave frequencies. The extraction of Plasma Enhanced Atomic Layer Deposition HfO₂ and ZrO₂ complex permittivity was performed up to 5 GHz using dedicated test vehicles allowing an in situ characterization as a function of dielectric thickness. The measurement procedure was thus validated, highlighting the potentiality of these two dielectrics to cover a wide range of frequencies.     

High mobility NMOSFET structure with high-/spl kappa/ dielectric

High-/spl kappa/ NMOSFET structures designed for enhancement mode operation have been fabricated with mobilities exceeding 6000 cm/sup 2//Vs. The NMOSFET structures which have been grown by molecular beam epitaxy on 3-in semi-insulating GaAs substrate comprise a 10 nm strained InGaAs channel layer and a high-/spl kappa/ dielectric layer (/spl kappa//spl cong/20). Electron mobilities of >6000 and 3822 cm/sup 2//Vs have been measured for sheet carrier concentrations n/sub s/ of 2-3/spl times/10/sup 12/ and /spl cong/5.85/spl times/10/sup 12/ cm/sup -2/, respectively. Sheet resistivities as low as 280 /spl Omega//sq. have been obtained.     

Tuning the dipole at the High-κ/SiO2 interface in advanced metal gate stacks

Combining two different electrical characterisation methods on the same MOS capacitors, we demonstrate that the flat band voltage of High-κ metal gate stack is determined by a dipole at the High-κ/SiO₂ interface. Meanwhile, roll-off of flat band voltage, occurring for thin SiO₂ inter layer, is also associated to a dipole variation at this same interface. We have measured its value and we show that this dipole is highly influenced by the High-κ material in contact with the SiO₂. Moreover, we also demonstrate its strong dependence on the process conditions. Finally, for a same metal gate and depending on the High-κ in contact with SiO₂, we show that this dipole can induce up to 1.7 eV variation in the gate effective work function. However, controlling the dipole magnitude remains a strong issue especially for the thinnest EOT.     

Enhancing light-extraction efficiency of OLEDs with high- and low-refractive-index organic–inorganic hybrid materials

High- and low-refractive-index hybrid materials were prepared by an in situ acid-free sol–gel process for internal and external light-extraction layers in organic light-emitting diodes (OLEDs). A random copolymer of methyl methacrylate (MMA) and 3-(trimethoxysilyl) propyl methacrylate (MSMA), poly(MMA-co-MSMA), which was capped with trialkoxysilane in MSMA units, was used as a precursor. The precursor was further reacted with titanium(IV) isopropoxide (TTIP) and tetraethyl orthosilicate (TEOS) to synthesize the high- and low-refractive-index hybrid materials, respectively, in which TiO₂ and SiO₂ nanoparticles were well dispersed, respectively, in the polymer matrix. After the reactions with TTIP and TEOS, the refractive index increased to 1.81 and decreased to 1.44 from 1.50 of the precursor, respectively. The luminance, power, and current efficiency of the OLED with an external light-extraction layer were enhanced by 21.3, 28.6, and 29.1%, respectively, those of the OLED with an internal light-extraction layer were increased by 62.4, 76.9, and 59.2%, respectively, and those of the device with combined ELEL and ILEL were enhanced by 62.7, 77.2, and 59.3%, respectively, when compared to values for the reference OLED without an internal or external light-extraction layer. These results indicate that high- and low-refractive-index materials are desirable for enhancement in light-extraction efficiency, and they can provide practical solutions for various applications such as OLED displays and lighting.     

Bistable light-detection devices

The effect of optical feedback in light-amplifier radiation detectors is discussed, with spectral reference to bistable operation. High- and low-impedance systems are considered and the operating characteristics of a number of such detectors are presented.     

基于集总元件的多级高低通移相器设计

本文分析了多级高低通滤波器型移相器的带宽特性，在移相量较小时，使用单级滤波器来实现，中等移相量要用三级，移相量大时，需要五级。在此基础上，设计加工了P 波段五位移相，并给出了调试和测试结果。     

高速差分过孔的仿真分析

高速差分信号传输中也存在着信号完整性问题。差分过孔在频率很高的时候会明显地影响差分信号的完整性,现介绍差分过孔的等效RLC模型,在HFSS中建立了差分过孔仿真模型并分析了过孔尤其过孔长度对信号完整性的影响。     

影响全息光刻图形质量的因素

使用矩阵转换方法,对全息光刻中全息掩模衍射效率进行了数值模拟计算,讨论了记录介质显影前后特性的改变和再现时全息掩模复位精度对光刻图形质量的影响,并找出了影响图形质量的主要因素.在此基础上设计了实验系统,最后得到了分辨率基本上只受初始光掩模分辨率限制的光刻图形.     

The matrix Riccati equation for scattering from stratified chiralspheres

Angular scattering from radially stratified spherical chiral objects is investigated. Based on the principles of invariant embedding, we formulate a matrix Riccati equation that can be used to examine basic scattering properties of spherical chiral structures with radial inhomogeneities in permittivity, permeability, and chirality. High- and low-frequency limits as well as weak reflection and constant impedance cases for this equation are examined. We show that in the limit of large radii of curvature, this formulation yields the planar result