一种应用于IEEE 802.11 a_n的高线性度InGaP/GaAs功率放大器

A three-stage 4.8-6 GHz monolithic power amplifier(PA) compatible with IEEE 802.11a/n designed based on an advanced 2μm InGaP/GaAs hetero-junction bipolar transistor(HBT) process is presented.The PA integrates input matching and closed-loop power control circuits on chip.Under 3.3 V DC bias,the amplifier achieves a ~31 dB small signal gain,excellent wide band input and output matching among overall 1.2 GHz bandwidth,and up to 24.5 dBm linear output power below EVM 3%with IEEE 802.11a 64QAM OFDM input signal.     

Design of broadband class-F power amplifier for multiband LTE handsets applications

A broadband class-F power amplifier for multiband LTE handsets applications is developed across 2.3-2.7 GHz. The power amplifier maintains constant fundamental impedance at the output matching circuit which is operating for broadband. The nearly zero of second harmonic impedance and nearly infinity of third harmonic impedance are found for highly efficient class-F PA. The harmonic control circuits are immersed into the broadband output matching for fundamental frequency. For demonstration, the PA is implemented in InGaP/GaAs HBT process, and tested across the frequency range of 2.3-2.7 GHz using a long-term evolution signal. The presented PA delivers good performance of high efficiency and high linearity, which shows that the broadband class-F PA supports the multiband LTE handsets applications.     

基于InGaP/GaAs HBT的高效率高谐波抑制功率放大器

将基于InGaP/GaAs HBT工艺的高线性功率放大器芯片、CMOS控制芯片、输出匹配电路集成于双层基板,研制了一款工作在S波段的高效率、高谐波抑制功率放大器模组(MCM)。通过在输出匹配电路中引入多个LC谐振网络,抑制了输出信号的高次谐波分量,改善了放大器模组的线性度和效率。在电源电压4 V、静态电流220 mA、工作频率1.9～2.1 GHz条件下,其小信号增益大于34.3 dB,1 dB压缩点输出功率大于34.3 dBm,功率附加效率大于44.2%,谐波抑制比小于-55.0 dBc;采用21.6 kHzπ/4正交相移键控(QPSK)方式调制信号,功率放大器模组输出功率为34 dBm时,其误差向量幅度(EVM)小于3.1%,第一邻近信道功率比(ACPR1)小于-31 dBc,第二邻近信道功率比(ACPR2)小于-41 dBc。该放大器模组可广泛应用于卫星通信等领域。     

应用于LTE的高效率高线性功率放大器

基于2 μm InGaP/GaAs HBT工艺,设计并实现了一种用于LTE终端的高效率、高线性功率放大器.采用模拟预失真和相位补偿器抑制幅度失真和相位失真,实现了高线性度;利用二次谐波终端电容改变电路工作模式,减少时域电压电流的重叠损耗功率,提高了功率附加效率.结果 表明,在3.4V电源电压、2.8V偏置电压时,在工作...     

L波段高功率高效率功率放大器芯片设计

基于InGaP/GaAs HBT工艺,设计实现了一款L波段高功率高效率功率放大器芯片。该功率放大器利用预匹配电容与基极稳流电阻对功率放大器的基本功率单元进行设计,并对晶体管功率合成器电路进行了改进。仿真结果表明,在工作频段1 650 MHz处,小信号增益达到43.5 dB,输入输出回波小于-13 dB,饱和输出功率大于36 dBm,饱和功率附加效率大于53.8%,芯片面积仅为0.9 mm×0.7 mm。采用此改进设计后,该款芯片在较小面积内实现了较高的功率放大器效率指标。     

SiGe HBT工艺宽带功率放大器

A novel broadband power amplifier fabricated in 0.13 m SiGe HBT technology is realized.The pseudo-differential structure is proposed to avoid the influence of the bonding wire due to the AC virtual ground created at the common emitter node.A compensated matching technique is adopted in interstage matching to expand bandwidth.A multi-stage broadband matching technique is used in an input/output matching network to offer broadband impedance matching,which ensures maximum power transfer.An adaptive bias circuit could improve linearity and efficiency in wide output power level.With 2.5 V power supply,the measured results achieve 96% 3-dB bandwidth(517-1470 MHz),27.2 dB power gain,26.9 dBm maximum output power,19.7 dBm output 1 dB compression point,and 26.7% power added efficiency.     

一种简化的VBIC模型和InGaP/GaAs HBT宽带放大器设计

采用一种新的简化VBIC模型对单、多指InGaP/GaAs HBT器件进行建模.测量和模型仿真FV特性及其在多偏置条件下多频率点S参数对比结果表明,DC～9GHz频率范围内,简化后的模型可对InGaP/GaAs HBT交流小信号特性进行较好的表征.利用建立的模型设计出DC～9GHz两级直接耦合宽带放大器,该放大器增益达到19dB,输入、输出回波损耗分别低于-10dB和-8dB.     

一种简化的VBIC模型和InGaP/GaAs HBT宽带放大器设计

采用一种新的简化VBIC模型对单、多指InGaP/GaAs HBT器件进行建模．测量和模型仿真I-V特性及其在多偏置条件下多频率点S参数对比结果表明，DC～9GHz频率范围内，简化后的模型可对InGaP/GaAs HBT交流小信号特性进行较好的表征．利用建立的模型设计出DC～9GHz两级直接耦合宽带放大器，该放大器增益达到19dB，输入、输出回波损耗分别低于－10dB和－8dB．     

A highly linear power amplifier for WLAN

A three-stage power amplifier (PA) for WLAN application in 2.4-2.5 GHz is presented. The proposed PA employs an adaptive bias circuit to adjust the operating point of the PA to improve the linearity of the PA. Two methods to short the 2nd harmonic circuit are compared in the area of efficiency and gain of the PA. The PA is taped out in the process of 2 μm InGaP/GaAs HBT and is tested by the evaluation board. The measured results show that 31.5 dB power gain and 29.3 dBm P_1dB with an associated 40.4% power added efficiency (PAE) under the single tone stimulus. Up to 26.5 dBm output power can be achieved with an error vector magnitude (EVM) of lower than 3% under the 64QAM/OFDM WLAN stimulus.     

应用于C-X-Ku波段的宽带功率放大器

采用0.25μm AlGaAs/InGaAs/GaAs PHEMT工艺技术,研制出了6～18GHz三级MMIC全匹配宽带功率放大器单片.在6～18GHz的工作频率下,放大器的平均功率增益为19dB,输出功率大于33.3dBm,在10GHz处有最大输出功率34.7dBm,输入回波损耗S11低于-10dB,输出回波损耗S22低于-6dB.与报道的C-X-Ku频段宽带功率放大器相比,有较好的功率平坦度.     

一款小型化S频段高谐波抑制功率放大器的设计

为了确保卫星系统电磁兼容性满足要求,设计了一款应用于卫星测控通信系统的小型化S频段高谐波抑制功率放大器。通过在功放输出端设置谐波抑制网络改善了电路的谐波抑制性能。采用集总与分布参数元件相结合匹配形式,实现了电路的小型化设计。电路尺寸38.5 mm×28.2 mm。通过对功放腔体结构进行细化建模仿真,确保了功放电路的稳定性。实测结果表明,当工作频率为2.52 GHz时,功放1 dB压缩点大于31 dBm,谐波抑制度大于61 dBc,功率附加效率高于35%,1 dB带宽大于320 MHz。与国内外同类产品相比,该功放在谐波抑制性能等方面具有明显优势。     

A broadband Doherty power amplifier with harmonic suppression

In this paper, the design and implementation of the broadband, Doherty power amplifier (DPA) with 2nd and 3rd harmonics suppression, with theoretical analysis is presented. In the proposed structure a novel harmonic suppressed Wilkinson power divider used in DPA, which results in harmonic suppression with high level of attenuation. Moreover the proposed DPA has major advantages in terms of the linearity and works on a wideband frequency range (2.1–2.7 GHz) with minimum 40% drain efficiency (DE). The linearity of the proposed DPA is increased extremely, which significant improvement (7 dBm) is achieved from the main amplifier. In the proposed DPA, the main and the auxiliary amplifiers are implemented using Class-AB and Class-C topology respectively with equal MRF6S27015N MOTOROLA transistors in LDMOS technology.     

利用ADS设计基于MESFET的宽带功率放大器

文章介绍了一种在无法获取器件大信号模型的情况下采用小信号法设计宽带功率放大器的方法.基于微波砷化镓场效应管,采用小信号设计方法,利用ADS软件,依据宽带功率放大器的各项指标来同步进行电路的设计、优化和仿真,设计出了满足预期期望值的宽带功率放大器.     

一种宽带的InGaP/GaAs HBT 再生频率分频器

A dynamic divide-by-two regenerative GaP/GaAs heterojunction bipolar transistors （HBTs） frequency divider （RFD） is presented in a 60-GHz-fT Intechnology. To achieve high operation bandwidth, active loads instead of resistor loads are incorporated into the RFD. On-wafer measurement shows that the divider is operating from 10 GHz up to at least 40 GHz, limited by the available input frequency. The maximum operation frequency of the divider is found to be much higher than fT/2 of the transistor, and also the divider has excellent input sensitivity. The divider consumes 300.85 mW from 5 V supply and occupies an area of 0.47 × 0.22 mm^2.     

A modified class-F power amplifier with miniaturized harmonic control circuit

In this paper, a modified class-F power-amplifier (PA) for GSM applications is designed, simulated and tested. In this design, novel symmetrical meandered lines compact microstrip resonant cell (SMLCMRC), is proposed as a new harmonics control circuit (HCC), which resulted in size compression, power added efficiency (PAE) enhancement, power gain improvement, and better linearization in the PA. In this work both of the conventional class-F amplifier and proposed amplifier with SMLCMRC is designed at 1.8 GHz. The measurements show that the proposed PA with SMLCMRC has 72.54% maximum PAE, 17.13 dB gain and the 1 dB compression point (P1dB) is about 35.1 dBm. These results show, 16.5% improvement in PAE, 1.33 dB increment in gain and 1.1 dB improvement in linearity operating range of proposed amplifier compared to the conventional PA.     

应用于TD-SCDMA移动终端的单片InGaP/GaAs HBT功率放大器

报道了用于TD-SCDMA移动终端的高效率、高线性度HBT功率放大器的研制. 该单片功率放大器采用两级放大结构,内部集成了输入匹配、级间匹配网络以及有源偏置电路,总芯片面积仅为0.91mm×0.98mm. 该功率放大器采用单电源3.4V供电,在高、低功率模式下,PAE分别为43%和16%,增益达到了28.5以及24dB. 当输入QPSK调制信号时,在低输出功率以及高输出功率状态下,1.6MHz/3.2MHz中心频偏处,ACPR分别低于-45dBc/-56dBc 和-39dBc/-50dBc. 本芯片尺寸小,电压稳定性高,性能优越,为低成本化的大规模生产提供了可能性.