合成鱼骨外形氮化镓纳米棒

通过氨化射频溅射工艺生长Ga2O3薄膜,在石英衬底上成功地合成了六方GaN纳米棒.用X射线衍射(XRD)、扫描电镜(SEM)、高分辨率透射电镜(HRTEM)和光致发光光谱(PL)对生成的产物进行了分析.合成的纳米棒中有部分一维线状结构表面有规则的突起,呈现鱼骨外形.这种具有青鱼骨外形的纳米棒由六方单晶GaN纳米晶粒沿轴向错落排列而成.室温下观察到GaN纳米棒的黄光发射峰发生了大尺度的蓝移.     

合成鱼骨外形氮化镓纳米棒

通过氨化射频溅射工艺生长 Ga2 O3薄膜 ,在石英衬底上成功地合成了六方 Ga N纳米棒 .用 X射线衍射(XRD)、扫描电镜 (SEM)、高分辨率透射电镜 (HRTEM)和光致发光光谱 (PL)对生成的产物进行了分析 .合成的纳米棒中有部分一维线状结构表面有规则的突起 ,呈现鱼骨外形 .这种具有青鱼骨外形的纳米棒由六方单晶 Ga N纳米晶粒沿轴向错落排列而成 .室温下观察到 Ga N纳米棒的黄光发射峰发生了大尺度的蓝移     

In2O3纳米线制备及其特性

使用管式加热炉成功地制备出In2O3纳米线.通过扫描电子显微镜可以看到样品为In2O3纳米线;X射线衍射分析证实该材料是立方结构的In2O3;X射线光电子谱分析发现该In2O3中存在大量氧缺陷;光致发光谱研究显示制得的In2O3纳米线有比较强的发光现象,主要集中在紫外光谱区.同时对反应的气相-固相(V-S)生长机理和In2O3的光致发光机理进行了详细分析.     

In2O3纳米线制备及其特性

使用管式加热炉成功地制备出In2O3纳米线.通过扫描电子显微镜可以看到样品为In2O3纳米线;X射线衍射分析证实该材料是立方结构的In2O3;X射线光电子谱分析发现该In2O3中存在大量氧缺陷;光致发光谱研究显示制得的In2O3纳米线有比较强的发光现象,主要集中在紫外光谱区.同时对反应的气相-固相(V-S)生长机理和In2O3的光致发光机理进行了详细分析.     

纳米氧化铟和稀土共掺杂二氧化硅薄膜的结构和光学性质研究

用溶胶-凝胶法制得了In2O3纳米颗粒与Eu3 共掺的SiO2薄膜.使用X-射线衍射证实体系中形成了In2O3纳米颗粒,其数密度可以通过改变铟的掺杂浓度来进行良好的控制.在薄膜的光致发光光谱中观察到Eu3 离子的5Do-7FJ(J:O-4)特征发射峰,In2O3纳米颗粒的掺入使Eu3 的光致发光得到显著增强.通过光致发光激发光谱的测量进一步研究了In2O3纳米颗粒对Eu3 的光致发光增强的机制.     

Growth and Optical Properties of ZnO Films and Quantum Wells

研究了用MOCVD法在蓝宝石(Al2O3)(0001)和(1120)衬底上制备ZnO薄膜时的生长特性.详细研究了采用Al2O3(0001)衬底时生长温度与压力的影响.由于存在比较大的晶格失配,一般容易得到ZnO纳米结晶,不容易获得既平坦且质量又好的ZnO薄膜.生长温度对薄膜-衬底界面的生长模式有很大的影响;而生长压力对ZnO纳米结晶的形状有决定性作用.通过适当控制生长温度及压力,可以得到ZnO薄膜或不同形状的纳米结构.当采用Al2O3(1120)衬底时,由于晶格失配较小,能保持平坦层状生长,临界膜厚远远大于采用Al2O3(0001)衬底的结果.在Al2O3(1120)衬底上制作了ZnO/MgZnO量子阱并研究了其光学特性.观察到了量子化能级间以及在载流子间的跃迁引起的发光.由压电效应引起的内建电场约为3×105V/cm.同时发现采用低温低压生长可以增大ZnO中受主杂质浓度,有利于获得p型ZnO.     

CNT阵列选择性生长在金属／绝缘体／半导体基底上的高效方法在FED的应用

通过使用氩气作为传输气体在金属／绝缘体／半导体（MDS）基底上，利用热量分解存在挥发性催化剂的不固定碳氢化合物的气压CVD工艺，生长多壁碳纳米管（CNT）阵列，特别是Si／SiO2，Ti／SiO2／Si，AL2O3矩阵／Ni催化剂已经在FED应用中已被研究。结果表明，CNT生长的选择性和CNT的包装密度可以在一定的条件下控制。在所研究的表面类型中，已经获得了高密度的垂直生长和更适于定向生长的低密度CNT阵列，还有在Ni晶体上的Al2O3纳米微孔中的单个CNT。     

Cu_2O不同形貌的研究进展

近年来,Cu2O形貌控制合成的研究受到了广泛关注。首先,介绍了Cu2O一维、二维、三维结构中不同形貌的最新研究成果,分析了不同形貌的合成机理,并对各形貌的进一步研究趋势进行了探讨。然后,着重评述了Cu2O纳米笼、纳米骨架结构的研究进展,指出此类形貌的合成中主要涉及到氧化刻蚀作用和奥斯特瓦尔德熟化机理。最后,总结了Cu2O不同形貌研究的现状,指出了今后研究的方向,并提出了未来关于Cu2O形貌研究中主要的两大类趋势,即具有更多晶面的非传统型多面体结构以及具有更大比表面积、更高开放程度的纳米笼和纳米骨架结构。     

用纳米棒ZnO作模板生长无支撑的AlN纳米晶

用金属有机物气相外延在纳米棒ZnO模板上沉积AlN薄膜.SEM测试表明该薄膜形成了一种倾倒纳米棒的表面.而GIXRD测试进一步证实它是纤锌矿结构的AlN,晶粒尺度约为12nm,接近于ZnO纳米棒的直径(30nm).这意味着纳米棒结构的ZnO能限制AlN的横向生长.此外,高温下用H2刻蚀ZnO直接在生长中实现了外延层的剥离.最终得到了无支撑的AlN纳米晶,完整无破损的区域约为1cm×1cm.定义这个生长机制为"生长-刻蚀-合并"过程.     

离子诱导气溶胶成核过程的研究

离子诱导成核是大气气溶胶形成的重要路径之一。大气中团簇离子的形成,主要由宇宙射线电离空气产生的初级离子与H2O、H2SO4、HNO3、NH3、有机物等物质发生的离子-分子反应而产生。成核是团簇离子生长和蒸发相互竞争的一个过程,团簇离子生长到临界核尺寸时,便可自发生长。研究表明临界核大小约1.6 nm,对应的粒子的质量数在5000 amu以上。离子诱导生成的气溶胶粒子对气候的影响以及离子诱导成核在大气成核事件中是否占主要作用还存在很大争议,这需要进行进一步的外场观察、理论模拟、实验室研究来充分弄清离子诱导成核机理。     

Sn掺杂对(In0.95-xSnxFe0.05)2O3薄膜的结构、电学及磁特性的影响

我们利用脉冲激光沉积的方法制备了一系列(In0.95-xSnxFe0.05)2O3 (x=0~0.09)薄膜,并在其中发现了室温铁磁性。X射线衍射结果表明锡与铁离子已掺入氧化铟晶格。随着锡的掺入,样品内的载流子浓度得到了很大的提高,但相应的铁磁性却几乎没有变化。我们认为氧空位相关的束缚磁极化子模型能够跟好的解释我们的铁掺杂氧化铟薄膜中的铁磁耦合的机制,而载流子传导的RKKY相互作用则不适用于这一系统。     

Effects of surface passivation during atomic layer deposition of Al2O3 on In0.53Ga0.47As substrates

In this work we investigate the effect of different III-V surface passivation strategies during atomic layer deposition of Al₂O₃. X-ray photoelectron spectroscopy indicates that bare As-decapped and sulfur passivated In_0.53Ga_0.47As present residual oxides on the surface just before the beginning of the Al₂O₃ deposition while the insertion of a Ge interface passivation layer results in an almost oxide free Ge/III-V interface. The study of the initial growth regimes, by means of in situ spectroscopic ellipsometry, shows that the growth of Al₂O₃ on Ge leads to an enhanced initial growth accompanied by the formation of Ge-O-Al species thus affecting the final electrical properties of the stack. Alternatively, deposition on decapped and S-passivated In_0.53Ga_0.47As results in a more controlled growth process. The sulfur passivation leads to a better electrical response of the capacitor that can be associated to a lower oxide/semiconductor interface trap density.     

The syntheses and microstructures of tabular SrTiO3 crystal

In the present paper, the microstructures of SrTiO₃ particles obtained in two different methods were examined by scanning electron microscopy (SEM) and X-ray diffraction pattern (XRD). The two synthesis techniques included a conventional mixed solid method and a molten salt synthesis method (MSS), which proceeded through two steps. In the first, precursor Sr₃Ti₂O₇ particles were synthesized. Tabular SrTiO₃ crystals were synthesized via the superposition of the SrTiO₃ basic cell on the interface of Sr₃Ti₂O₇ particles. The microstructures of SrTiO₃ particles synthesis in those two ways were quite different. The microstructures of SrTiO₃ obtained by MSS method were high purity and obviously tabular in structure. Oriented growth faces included typical (0 0 1), (1 0 0), (1 1 0), etc. The mechanism of the oriented growth of tabular SrTiO₃ could be considered as the superposition of coordination polyhedron Ti–O₆ octahedron basic cell on the interface of Sr₃Ti₂O₇ particles.     

用第一性原理研究Sn掺杂 Ga1.375In0.625O3的电子结构和导电性

用第一性原理计算了Sn 替位Ga1.375In0.625O3化合物的Ga 原子(Ga1.25In0.625Sn0.125O3)和Sn 替位Ga1.375In0.625O3化合物的In原子(Ga1.375In0.5Sn0.125O3)的结构、电子能带和态密度。Ga1.25In0.625Sn0.125O3半导体材料比Ga1.375In0.5Sn0.125O3材料具有大的晶格参数和强的Sn–O离子键。在Sn掺杂 Ga1.375In0.625O3化合物中,Sn 原子优先取代In 原子。Sn掺杂 Ga1.375In0.625O3化合物显示n型导电性, 杂质能带主要由Sn 5s 态组成。Ga1.375In0.5Sn0.125O3化合物的光学带隙大于Ga1.25In0.625Sn0.125O3化合物的光学带隙。 Ga1.25In0.625Sn0.125O3 具有小的电子有效质量和大的电子迁移率,Ga1.375In0.5Sn0.125O3 具有多的相对电子数和好的导电性。     

Mechanism of selective Si3N4 etching over SiO2 in hydrogen-containing fluorocarbon plasma

This paper describes the mechanism of selective Si₃N₄ etching over SiO₂ in capacitively-coupled plasmas of hydrogen-containing fluorocarbon gas, including CHF₃, CH₂F₂ and CH₃F. The etch rate of Si₃N₄ and SiO₂ is investigated as a function of O₂ percentage in all plasma gases. Addition of O₂ in feed gases causes plasma gas phase change especially H density. The SiO₂ etch rate decreases with increase of O₂ percentage due to the decline of CF_x etchant. The Si₃N₄ etch rate is found to be strong correlated to the H density in plasma gas phase. H can react with CN by forming HCN to reduce polymer thickness on Si₃N₄ surface and promote the removal of N atoms from the substrate. Thus the Si₃N₄ etch rate increases with H intensity. As a result, a relative high selectivity of Si₃N₄ over SiO₂ can be achieved with addition of suitable amount of O₂ which corresponds to the maximum of H density.     

Co3O4/Fe2O3异质结复合材料的制备及其紫外光光电探测性能

分别采用旋涂法和水热法在FTO衬底上制备Co₃O₄种子层和Co₃O₄薄膜,再在Co₃O₄薄膜上水热生长Fe₂O₃纳米棒,获得了高质量的Co₃O₄/Fe₂O₃异质结复合材料。通过改变Fe₂O₃前驱体溶液浓度来改变异质结复合材料中Fe₂O₃组分的含量。结果表明,Fe₂O₃纳米棒覆盖在呈网状结构的Co₃O₄薄膜上,随着Fe₂O₃前驱体溶液浓度即Fe₂O₃组分含量的增加,Co₃O₄/Fe₂O₃异质结复合材料对紫外光的响应逐渐增强,当Fe₂O₃前驱体溶液浓度为0.015mol/L时,异质结复合材料有着很好的光电稳定性,并表现出较高的响应率(12.5mA/W)和探测率(4.4×10¹⁰Jones)。     

Effects of excess Bi concentration, buffered Bi2O3 layer, and Ta doping on the orientation and ferroelectricity of chemical-solution-deposited Bi3.25La0.75Ti3O12 films

Effects of excess Bi concentration, buffered Bi₂O₃ layer, and Ta doping on the orientation and ferroelectricity of chemical-solution-deposited (CSD) Bi_3.25La_0.75Ti₃O₁₂ (BLT) films on Pt/SiO₂/Si(100) were studied. The optimum concentration of excess Bi added to the BLT films to achieve a larger remanent polarization (2Pr) was 10 mol.%. The buffered Bi₂O₃ layers could reduce the temperature for c-axis-oriented growth of BLT films from 850°C to 700°C. However, two-step annealing, i.e., first annealed at 650°C and then annealed at a temperature of 700–850°C, could effectively suppress the c-axis-oriented growth and thus improve the 2Pr of BLT films. The improvement of the 2Pr of BLT films can be explained in terms of the large polarization along the a-axis orientation and buffered Bi₂O₃ layers, which compensate the BLT films for Bi evaporation during annealing. The Ta doping can induce two contrary effects on the 2Pr of BLT films. For the (Bi_3.25La_0.75)(Ti_3−xTa_x)O₁₂ (BLTTx) films with x=0.005, the effect of a decrease of oxygen vacancies would be dominant, resulting in the improvement of 2Pr. Because the Ta concentration (x) in the BLTTx films exceeds 0.01, the effect of a decrease of grain size would become dominant, resulting in the degradation of 2Pr.     

Intermetallic compounds formed during the interfacial reactions between liquid In-49Sn solder and Ni substrates

The interfacial reactions between liquid In-49Sn solder and Ni substrates at temperatures ranging from 150°C to 450°C for 15 min to 240 min have been investigated. The intermetallic compounds formed at the In-49Sn/Ni interfaces are identified to be a ternary Ni₃₃In₂₀Sn₄₇ phase using electron-probe microanalysis (EPMA) and x-ray diffraction (XRD) analyses. These interfacial intermetallics grow with increasing reaction time by a diffusion-controlled mechanism. The activation energy calculated from the Arrhenius plot of reaction constants is 56.57 kJ/mol.     

Influence of the metal electrode on the characteristics of thermal Ta2O5 capacitors

The effect of various electrodes (Al, W, TiN) deposited by evaporation (Al) and sputtering (W, TiN) on the electrical characteristics of thermal thin film (15-35 nm) Ta₂O₅ capacitors has been investigated. The absolute level of leakage currents, breakdown fields, mechanism of conductivity, dielectric constant values are discussed in the terms of possible reactions between Ta₂O₅ and electrode material as well as electrode deposition process-induced defects acting as electrically active centers. The dielectric constant values are in the range 12-26 in dependence on both Ta₂O₅ thickness and gate material. The results show that during deposition of TiN and Al a reaction that worsens the properties of Ta₂O₅ occurs while there is not an indication for detectable reduction of Ta₂O₅ when top electrode is W, and the leakage current is 5-7 orders of magnitude lower as compared to Al and TiN-electroded capacitors. The high level of leakage current for TiN and Al gate capacitors are related to the radiation defects generated in Ta₂O₅ during sputtering of TiN, and damaged interface at the electrode due to a reaction between Al and Ta₂O₅, respectively. It is demonstrated that the quality of the top electrode affects the electrical characteristics of the capacitors and the sputtered W is found to be the best. The sputtered W gate provides Ta₂O₅ capacitors with a good quality: the current density <7 × 10⁻¹⁰ A/cm² at 1 V (0.7 MV/cm, 15 nm thick Ta₂O₅). W deposition is not accompanied by an introduction of a detectable damage leading to a change of the properties of the initial as-grown Ta₂O₅ as in the case of TiN electrode. Damage introduced during TiN sputtering is responsible for current deterioration (high leakage current) and poor breakdown characteristics. It is concluded that the sputtered W top electrode is a good candidate as a top electrode of storage capacitors in dynamic random access memories giving a stable contact with Ta₂O₅, but sputtering technique is less suitable (favorable) for deposition of TiN as a metal electrode due to the introduction of radiation defects causing both deterioration of leakage current and poor breakdown characteristics.     

Characterization and ellipsometric investigation of high-quality ZnO and ZnO(Ga2O3) thin alloys by reactive electron-beam co-evaporation technique

High-quality ZnO(Ga₂O₃) thin films have been co-evaporated by reactive electron-beam evaporation in an oxygen environment. The effect of Ga₂O₃ on the structural and optical properties has been investigated. X-ray diffraction (XRD) measurements have shown that the ZnO(Ga₂O₃) alloys are c-axis-oriented. The alloy containing 28% of Ga₂O₃ showed the best crystallinity. Photoluminescence on ZnO(28%Ga₂O₃) reveals an enhancement of the ultraviolet near band edge emission at 380 nm while the intensity of the deep-level emissions weakens. A reduction of the oxygen vacancies as well as the reduction of the zinc interstitials with gallium may explain this effect. Thus, the possibility of transitions of electron in the conduction band to a deep acceptor level due to zinc interstitials may decrease. Finally, ellipsometric measurements show that the optimum weight concentration of gallium oxide in the alloys is 28%, thus correlating with the XRD and photoluminescence measurements.