退火温度对SnF2掺杂SnO2薄膜性能的影响

利用电子束蒸镀技术在石英玻璃上沉积SnF2掺杂SnO2(FTO)薄膜.研究了不同退火温度对FTO薄膜结构和光电性能的影响.研究结果表明:升高退火温度可促进FTO薄膜中晶粒逐渐变大,结晶度变好,同时薄膜在可见光范围内的透射率随着退火温度升高逐渐增加,吸收边发生蓝移,禁带宽度显著变宽,这是由于载流子浓度增加导致的Moss-Burstein效应.升高温度时,薄膜电学性能随着退火温度升高有了很大改善,700℃退火处理后得到电阻率低至2.74×101 Ω·cm、载流子浓度为2.09×1020 cm-3、迁移率为9.93 cm2·V 1·s 1的FTO薄膜.     

掺氟二氧化锡纳米粉的制备及电性能研究

以SnCl2·2H2O、HF为原料,采用共沉淀法合成了掺氟二氧化锡FTO(SnO2∶F)纳米粉。在氧化的过程中进行掺杂,使F原子更容易取代O原子,在400℃低温下蒸发得到了低电阻率的FTO纳米粉。应用SEM、XRD、EDS和压片测电阻等方法,对所获粉体进行了表征。结果表明,F的掺杂明显降低了SnO2的电阻率。当r(Sn∶F)为10∶3时,FTO纳米粉的电阻率最低,为57.2Ω/cm。     

掺氟氧化锡(SnO_2:F)纳米粉末的制备

以SnCl4.5H2O、氨水和HF酸为主要原料,用化学方法制取了掺氟氧化锡(FTO)纳米粉末。用XRD、SEM分别研究了FTO粉末的相结构和形貌,用比表面仪测定了粉末比表面积,同时测试了FTO粉末的电阻率。结果表明:FTO粉末是四方晶系金红石结构;在500℃下焙烧制取的粉末电阻率最低,为50?.m,比表面积为61.00m2/g。采用无水酒精球磨分散等步骤,可有效防止粉末团聚。     

Evolution of ZnO architecture on a nanoporous TiO2 film by a hydrothermal method and the photoelectrochemical performance

The synthesis of ZnO architecture on a fluorine-doped SnO2 (FTO) conducting glass pre-coated with nanoporous TiO2 film has been achieved by a one-step hydrothermal method at a temperature of 70 ℃.The effect of the reaction time on the morphology of the ZnO architecture has been investigated,and a possible growth mechanism for the formation of the ZnO architecture is discussed in detail.The morphology and phase structures of the as-obtained composite films have been investigated by field-emission scanning electron microscopy (FESEM) and X-ray diffraction (XRD).The results show that the growth time greatly affects the morphology of the obtained ZnO architecture.The photoelectrochemical performances of as-prepared composite films are measured by assembling them into dye sensitized solar cells (DSSCs).The DSSC based on the as-prepared composite film (2 h) has obtained the best power conversion efficiency of 1.845％.     

铜掺杂氧化锌薄膜的阻变特性

采用脉冲激光沉积法在SnO<,2>:F(FTO)衬底上制备了单一c轴取向生长的ZnO和ZnO:Cu薄膜,并对具有Au/ZnO/FTO和Au/ZnO:Cu/FTO三明治结构的器件进行了阻变特性测试.结果显示:两种器件在室温电场作用下均显示出双极可逆变阻特性;Cu掺杂使ZnO薄膜的开关比大幅增加,电流-电压曲线拟合结果显示...     

Substrate temperature effect on the photophysical and microstructural properties of fluorine-doped tin oxide nanoparticles

Transparent conducting oxide of fluorine-doped tin oxide (FTO) thin films was deposited from chemical solutions of tin chloride and ammonium fluoride using streaming process for electroless and electrochemical deposition (SPEED) at substrate temperature 450, 500, and 530 ℃ respectively. The effect of substrate temperatures on the microstructural properties such as crystallite size, dislocation density, micro strain, volume of the unit cell, volume of the nanoparticles, number of the unit cell, bond length and the lattice constants were examined using XRD technique. Only reflections from (110) and (200) planes of tetragonal SnO₂ crystal structure were obvious. The peaks are relatively weak indicating that the deposited materials constitute grains in the nano dimension. Hall measurements, which were done using van der Pauw technique, showed that the FTO films are n-type semiconductors. The most favorable electrical values were achieved for the film grown at 530 ℃ with low resistivity of 7.64×10^-4Ω·cm and Hall mobility of -9.92 cm²/(V·s).     

非晶Pr0.7Sr0.3MnO3薄膜的电阻开关性质

采用脉冲激光沉积法在SnO2:F( FTO)衬底上制备了非晶Pr0.7Sr0.3MnO3(PSMO)薄膜,并对具有Au/非晶PSMO/FTO三明治结构的器件进行了阻变特性测试.结果显示:在低电压范围扫描时,非晶PSMO薄膜的电流-电压(I-V)回线只在负电压区域呈现;随着电压的增加,薄膜的I-V回线出现在整个电压范围内...     

射频反应磁控溅射掺杂MWCNTs的SnO2薄膜NO2气敏传感器的研究

采用射频反应磁控溅射方法制备了氧化锡/多壁碳纳米管（SnO2/MWCNTs）薄膜材料,并在此基础上研制NO2气敏传感器。采用X射线衍射仪（XRD）、X光电子能谱仪（XPS）、扫描电子显微镜（SEM）来研究WO3/MWCNTs材料的表面形貌、表面化学状态、表面化学元素等材料特性,研究结果表明MWCNTs已经掺杂进SnO2材料,合成的SnO2/MWCNTs气敏传感器表现出对低浓度（甚至低于10ppb）的NO2气体有较高的灵敏度和较好的反应-恢复特性,并解释了该传感器的工作机理是基于pn结（P型MWCNTs和N型SnO2)作用的结果。     

磁控反应溅射SnO2薄膜的气敏特性研究

为研究SnO2薄膜的气敏特性,采用直流磁控反应溅射法制备了SnO2薄膜。探讨和分析了SnO2薄膜气敏元件的敏感机理。对SnO2薄膜的电阻和灵敏度的测试以及对实验结果的分析表明:SnO2薄膜厚度在150~400nm为宜,一般膜厚在250nm时较为敏感。在SnO2薄膜中掺入Pd、Pt、Ag等微量杂质可大大提高SnO2薄膜气敏元件的灵敏度,且使灵敏度的峰值向低温方向移动,增强了对H2、CO和C2H5OH等可燃气体的选择性、响应时间由3min缩短到0.5s以下。     

基于VO2/TiO2/FTO微结构的电压诱导相变存储器特性

相变存储器作为下一代具有竞争力的新型存储器,其基础和核心是相变存储介质.为了制备基于VO2薄膜的非易失性相变存储器,首先采用等离子体增强化学气相沉积法在氟掺杂二氧化锡(FTO)导电玻璃衬底上沉积一层厚度为100 nm的TiO2薄膜,再通过直流磁控溅射法制备VO2薄膜,并在TiOJFTO复合薄膜上形成VO2/TiO2/FTO微结构,用X射线衍射仪(XRD)、扫描电子显微镜(SEM)、四探针测试仪和半导体参数测试仪表征分析微结构的结晶和非易失性相变存储特性.结果表明,N2和O2的体积流量比为60∶40时,在TiO2/FTO上可生长出晶向为〈110〉的高质量VO2薄膜,在VO2/TiO2/FTO微结构两侧反复施加不同的脉冲电压,可观测到微结构具有非易失性相变存储特性,在67,68和69℃温度下的相变阈值电压分别为8.5,6.5和5.5V,相比多层膜结构的相变阈值电压降低了约37％.     

PECVD沉积微晶硅薄膜过程中氢原子对透明导电膜的影响

研究了等离子体放电过程中氢原子对单层SnO2和SnO2/ZnO双层透明导电膜的影响.发现当衬底温度超过150℃,H等离子体处理使SnO2薄膜的透光率显著降低.当在SnO2薄膜表面沉积一层ZnO时,既使ZnO膜的厚度为50nm,也可有效地抑制H原子对SnO2的还原效应,并在SnO2/ZnO双层膜上制备了转换效率为3.8%的微晶硅薄膜太阳电池.     

全无机钙钛矿纳米晶薄膜光电探测器

为改善有机-无机铅卤钙钛矿的空气稳定性,采用高温热注入法合成了两种不同尺寸的全无机钙钛矿CsPbBr3纳米晶。由于晶粒尺寸对纳米晶薄膜电学性能具有决定性的作用,研究了CsPbBr3纳米晶尺寸对薄膜光电导探测器光电响应性能的影响。结果表明:纳米片薄膜的光电流是纳米立方块薄膜的100倍,归结于二维CsPbBr3纳米片薄膜更少的晶界导致了更长的载流子扩散长度。对性能更加优异的纳米片薄膜光电探测器进行了全面的性能评价,低的噪声等效功率和高的归一化探测率表明其具有优异的弱光探测能力。     

低温制备透明SnO2:F薄膜的光电性研究

SnO2：F透明导电薄膜是一种广泛用于显示技术和能量转换技术的重要材料。本文在超声喷雾热解成膜技术基础上,对沉积装置进行了改进,同时对反应液配方进行了优化,在较低温度制备出透明SnO2：F导电薄膜。用XRD、UV／Vis、SEM、原子力显微镜分析测试方法对沉积薄膜的结构、形貌和光学、电学性质进行了研究。结果表明,在360℃积温度下制备的SnO2：F薄膜,其方块电阻为4．7Ω,(200)面择优取向明显,薄膜晶粒均匀,表面形貌有所改善,透明度有所提高。     

二氧化锡覆盖层对ITO透明导电薄膜热稳定性的改良

采用射频磁控溅射法在ITO玻璃表面沉积了一层15 nm左右的SnO2薄膜。利用霍尔效应测试仪、四探针电阻测试仪、场发射电子显微镜及紫外–可见–近红外光谱仪分析了所制薄膜的电学性质、表面形貌和光学性质。结果表明,在300~600℃退火后镀有SnO2覆盖层的ITO(SnO2/ITO)薄膜具有相对好的热学稳定性。在600℃退火后,ITO薄膜的方阻和电阻率分别为88.3Ω/□和2.5×10–3.cm,而此时,SnO2/ITO薄膜的方阻和电阻率仅为43.8Ω/□和1.2×10–3Ω.cm。最后,阐述了SnO2覆盖层提高ITO薄膜热稳定性的机制。     

X衍射法分析CVD制备SnO_2多晶膜的构成及其对气敏特性的影响

通过Ｘ光衍射图分析，确认了较低温度下ＣＶＤ法生长的非掺杂ＳｎＯ２晶膜含有较多的偏离ＳｎＯ２配位的晶体成份，从而定性地解释了该晶膜具有较高的气体敏感度的现象。     

TiO2 Coating for SnO2:F Films Produced by Filtered Cathodic Arc Evaporation for Improved Resistance to H+ Radical Exposure

Titanium dioxide thin films were deposited by filtered cathodic arc evaporation (FCAE) from a Ti target in an oxygen atmosphere onto (a) fluorine-doped tin oxide substrates SnO₂:F (FTO) and (b) glass microscope slides. The growth rate calculated from film thickness profilometry measurements was found to be approximately 0.8?nm/s. The films were highly transparent to visible light. x-Ray photoemission spectroscopy analysis of the Ti 2p electron binding- energy shift confirmed the presence of a TiO₂ stoichiometric compound. The results for the root-mean-square (RMS) surface roughness of the films deposited onto FTO substrates evaluated by atomic force microscopy suggested nanostructured film surfaces. When exposed to hydrogen plasma, TiO₂ films revealed insignificant changes in the optical spectra. The initial sheet resistance of the SnO₂:F layer was 14?Ω/sq. The deposition of the top TiO₂ layer (45?nm thick) over the FTO electrode resulted in an increase of the sheet resistance of 2?Ω/sq. In addition, the sheet resistance of the double-layer FTO/TiO₂ transparent conductive oxide (TCO) electrode increased by 1?Ω/sq as a result of H⁺ plasma exposure. Regardless of the TiO₂ film’s low conductivity, a thin protective layer could be coated onto FTO films (presumably 15?nm thick) due to their high transparency, offering high resistance to aggressive H⁺ plasma conditions. In this paper we show that ～50-nm-thick TiO₂ coating on FTO films provides sufficient protection against deterioration of transparency and conductivity due to hydrogen radical exposure.     

Dye-sensitized solar cells based on ZnO nanotetrapods

In this paper, we reviewed recent systematic studies of using ZnO nanotetrapods for photoanodes of dye-sensitized solar cells (DSSCs) in our group. First, the efficiency of power conversion was obtained by more than 3.27% by changes of conditions of dye loading and film thickness of ZnO nanotetrapod. Short-circuit photocurrent densities (Jsc) increased with the film thickness, Jsc would not be saturation even the film thickness was greater than 35 μm. The photoanode architecture had been charactered by good crystallinity, network forming ability, and limited electron-hopping interjunctions. Next, DSSCs with high efficiency was devised by infiltrating SnO2 nanoparticles into the ZnO nanotetrapods photoanodes. Due to material advantages of both constituents described as above, the composite photoanodes exhibited extremely large roughness factors (RFs), good charge collection, and tunable light scattering properties. By varying the composition of the composite photoanodes, we had achieved an efficiency of 6.31% by striking a balance between high efficiency of charge collection for SnO2 nanoparticles rich films and high light scattering ability for ZnO nanotetrapods rich films. An ultrathin layer of ZnO was found to form spontaneously on the SnO2 nanoparticles, which primarily was responsible for enhancing open-circuit photovoltage (Voc). We also identified that recombination in SnO2/ZnO composite films was mainly determined by ZnO shell condition on SnO2, whereas electron transport was greatly influenced by the morphologies and sizes of ZnO crystalline additives. Finally, we applied the composite photoanodes of SnO2 nanoparticles/ZnO nanotetrapods to flexible DSSCs by low temperature technique of "acetic acid gelation-mechanical press-ammonia activation." The efficiency has been achieved by 4.91% on ITO-coated polyethylenenaphtalate substrate. The formation of a thin ZnO shell on SnO2 nanoparticles, after ammonia activation, was also found to be critical to boosting Voc and to improving inter-particles contacts. Mechanical press, apart from enhancing film durability, also significantly improved charge collection. ZnO nanotetrapods had been demonstrated to be a better additive than ZnO particles for the improvement of charge collection in SnO2/ZnO composite photoanodes regardless of whether they were calcined.     

Comparative study between CBD and SILAR methods for deposited TiO2, CdS,and TiO2/CdS core-shell structure

TiO₂, CdS, and TiO₂/CdS core–shell structures were deposited on fluorine-doped tin oxide (FTO)-coated glass substrate using chemical methods. TiO₂ thin films were prepared by chemical bath deposition (CBD) and successive ionic layer adsorption and reaction (SILAR). SILAR was also utilized to deposit CdS film on TiO₂ thin film. The structural, surface morphology, and optical characteristics of FTO/TiO₂, FTO/CdS, and FTO/TiO₂/CdS core- shell structures were evaluated. The FTO/TiO₂ films produced by both methods conformed to anatase and rutile phase structures. Corresponding XRD pattern of the FTO/TiO₂/CdS sample exhibited one peak corresponding to hexagonal (101) for CdS. Scanning electron micrographs showed nanorod structures for the TiO₂ thin films deposited by CBD, contrary to the nanograin structure formed by SILAR. Optical results showed highly extended absorption edge to the visible region for the FTO/TiO₂/CdS structure deposited by the two methods. The TiO₂ thin films deposited by CBD exhibited higher absorption in the visible region than nanograined TiO₂ thin films deposited by SILAR because of the high surface area of the TiO₂ nanorod. Photoelectrochemical (PEC) properties of FTO/TiO₂, and FTO/TiO₂/CdS system were also examined. PEC behavior of FTO/TiO₂/CdS was compared with that of FTO/TiO₂ deposited by CBD and SILAR. The TiO₂ nanorod thin films deposited by CBD showed evidently enhanced PEC performance compared with nanograined TiO₂ thin films deposited by SILAR.     

表面等离子共振Ag-SnO2复合膜光学传感器

为了研究CuO的不同掺杂浓度对表面等离子共振角的影响,提出一种新型的棱镜耦合法Ag-SnO2(掺杂CuO)复合膜表面等离子共振光学传感器结构.采用射频反应溅射法在清洗处理后的金红石棱镜上依次制备Ag膜(50nm),SnO2膜(50nm),CuO和SnO2膜(50nm)4层膜结构,CuO的厚度依其不同的掺杂体积分数的不同而不同,经过退火实现SnO2薄膜的掺杂得到复合膜.以He-Ne激光62.8nm为入射激励光源,通过采用表面等离子共振实验方法,CuO的掺杂体积分数分别为0,0.01和0.05时,得到共振角分别为59.61°,60.52°和61.3°的结果.结果表明,CuO掺杂的体积分数越大,表面等离子共振的共振角越大.     

SnO_2纳米晶薄膜栅FET式气敏元件的研制

利用溶胶 凝胶法合成出纳米晶SnO2 薄膜 ,该薄膜可以利用化学腐蚀方法光刻腐蚀 ,因此采用传统硅平面工艺可以制作出纳米晶SnO2 薄膜栅FET式气敏元件 ,实现了制备纳米晶材料的溶胶 -凝胶工艺与硅平面工艺的兼容。对器件的测试结果表明 ,纳米晶SnO2 薄膜栅FET式气敏元件可以在常温下工作 ,元件的漏电流在乙醇气体中减小 ,掺杂镧以后 ,漏电流变化幅度增大