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1.
SiCN thin films and Cu/SiCN/Si structures were fabricated by magnetron sputtering. And some samples underwent the rapid thermal annealing(RTA) processing. The thin-film surface morphology, crystal structure and electronic properties were characterized by atomic force microscopy(AFM), X-ray diffractometry(XRD), Fourier transform infrared transmission(FTIR) and four-point probe(FPP) analyses. The results reveal the formation of complex networks among the three elements, Si, C and N, and the existence of different chemical bonds in the SiCN films, such as Si-C, Si-N, C-N and C=N. The as-deposited SiCN thin films are amorphous in the Cu/SiCN/Si structures and have good thermal stability, and the SiCN thin films are still able to prevent the diffusion reaction between Cu and Si interface after RTA processing at 600 ℃ for 5 min. 相似文献
2.
Characterization of NiCo composite silicides by 10 nm-Ni50Co50 alloy films with additional annealing
We fabricated 10 nm-Ni50Co50 alloy films into a single crystal and a polycrystalline silicon substrate, and applied silicidation annealing to these substrates
at 600 °C to 1100 °C for 40 s. To test the thermal stability of the processed silicide layers, we examined the change in their
physical properties after an additional 30-min annealing at the given rapid thermal annealing (RTA) temperatures. To characterize
the physical properties of the silicide layers, we used a four-point probe, an x-ray diffractometer (XRD), a transmission
electron microscope, a scanning electron microscope, an Auger electron spectroscope, and an atomic force microscope. The silicide
layer formed only through RTA showed low resistance (20 Ω/sq) at up to 1100 °C and 900 °C for the single crystal and for the
polycrystalline silicon substrate, respectively. Sheet resistance after the additional 30-min annealing was low, and did not
differ significantly before and after the additional annealing for the single crystal substrate, but it became high at all
temperatures for the polycrystalline substrate. The XRD confirmed the formation of the NiSi (or Ni(Co)Si) phase, in which
there were no changes after the additional annealing. The thickness of the RTA-formed silicide layers varied from 11 nm to
13 nm, 20 nm and 28 nm, depending on whether the temperature was 700 °C or 1000 °C, for both the single and the polycrystalline
substrates. The thickness of the silicide layers tended to increase from 22 nm to 25 nm, 48 nm and 82 nm after the additional
30-min annealing. Auger depth profiling also confirmed changes in thickness with the additional annealing. The surface roughness
was no greater than 10 nm in all cases, even with the additional annealing. We verified that the nano-silicide layer formed
with the proposed nano-NiCo alloy films satisfied the requirements for the nano-CMOS process. 相似文献
3.
Thermally-evaporated 10 nm-Ni/1 nm-Ir/(poly)Si structures were fabricated in order to investigate the thermal stability of
Ir-inserted nickel silicide after additional annealing. The silicide samples underwent rapid thermal annealing at 300 ° C
to 1200 ° C for 40 s, followed by 30 min annealing at the given RTA temperatures. Silicides suitable for the salicide process
were formed on the top of the single crystal and polycrystalline silicon substrates, mimicking actives and gates. The sheet
resistance was measured using a four-point probe. High resolution x-ray diffraction and Auger depth profiling were used for
phase and chemical composition analysis, respectively. Transmission electron microscope and scanning probe microscope were
used to determine the cross-section structure and surface roughness. The silicide, which formed on single crystal silicon
substrate with surface agglomeration after additional annealing, could defer the transformation of Ni(Ir)Si to Ni(Ir)Si2 and
was stable at temperatures up to 1200 °C. Moreover, the silicide thickness doubled. There were no outstanding changes in the
silicide thickness on polycrystalline silicon. However, after additional annealing, the silicon-silicide mixing became serious
and showed high resistance at temperatures >700 °C. Auger depth profiling confirmed the increased thickness of the silicide
layers after additional annealing without a change in composition. For a single crystal silicon substrate, the sheet resistance
increased slightly due to the significant increases in surface roughness caused by surface agglomeration after additional
annealing. Otherwise, there were almost no changes in surface roughness on the polycrystalline silicon substrate. The Ir-inserted
nickel monosilicide was able to maintain a low resistance in a wide temperature range and is considered suitable for the nano-thick
silicide process. 相似文献
4.
The structural, surfacial and nanoscale mechanical properties evolution of Ti-Ni-Cu thin films, prepared by the co-sputtering of TiNi and Cu targets during rapid thermal annealing (RTA) were investigated. Crystallization took place in a few seconds at 480 °C. With increasing annealing time (up to 180 s), roughness increased dramatically, and was far more prominent than in films crystallized by conventional thermal annealing (CTA). Although RTA is energy efficient due to the lower annealing time, the film roughness is less ideal than CTA, which may prove limiting in specific applications. The surface and subsurface chemical states of Ti, Ni and Cu was similar for RTA and CTA processed materials, demonstrating they are exposed to comparable redox potentials during annealing. Using X-ray absorption spectroscopy (XAS), it was found that the RTA (180 s) and CTA (1 h) films possessed longer range order. The evolution of nanoscale mechanical properties of the RTA films during rapid thermal annealing was also studied. 相似文献
5.
Ji-cheng Zhou You-zhen Li Di-hui Huang 《Journal of Materials Processing Technology》2009,209(2):774-778
One of the most important processes in Cu metallization for ultra large scale integrated circuits (ULSI) is to fabricate better diffusion barrier. In this paper, Ta/Ta-N films were fabricated by dc magnetron reactive sputtering (DCMS) in N2/Ar ambient, then Cu/Ta/Ta-N/Si multi-structures were prepared in suite. The thin-film samples were rapid thermal annealed (RTA) at variational temperatures in N2 ambient. Alpha-Step IQ Profiler, four-point probe (FPP) sheet resistance measurer, atomic force microscope (AFM), scanning electron microscope (SEM), X-ray diffraction (XRD) and tape test were used to characterize the microstructure and diffusion properties of the thin-films. The results show that the nanoscale Ta/Ta-N thin-films have smooth surface, and the thermal stability and barrier performance are good. After 600 °C/300 s RTA, Ta (40 nm)/Ta-N (60 nm) thin-films can effectively block against Cu diffusion and keep good adhesion strength with Cu films. After higher temperature RTA process, Cu atoms penetrated through the barrier and reacted with silicon, the barrier fail. 相似文献
6.
Chaun-Gi Choi Chang-Jung Kim Dae-Sung Yoon Joon-Sung Lee Won-Jong Lee Kwang-soo No 《Metals and Materials International》1998,4(1):83-87
Lanthanum doped lead titanate (PLT) thin films consisting of different La concentrations were fabricated on Pt/Ti/SiO2/Si using sol-gel method. The films were dried at 440°C for 5 min and fired at 600°C using rapid thermal annealing (RTA) for
1min. The preferred orientation (texturing) and the morphology of the PLT film were changed with La concentration and a possible
cause of the texturing has been discussed. The effects of La doping to the Lead titanate films on the dielectric constants,
P-E hysteresis loop and pyroelectric coefficient were measured and discussed. 相似文献
7.
Ludovic Sarakha Thomas Bégou Antoine Goullet J. Cellier Angélique Bousquet E. Tomasella T. Sauvage Philippe Boutinaud Rachid Mahiou 《Surface & coatings technology》2011
CaTiO3:Pr3+ is a phosphor of great interest for electroluminescence application owing to its intense red emission characterized by CIE coordinates very close to those of the NSTC “ideal red”. In this paper, thin films of CaTiO3:Pr3+ are deposited by radiofrequency sputtering technique in pure argon and post-treated by Rapid Thermal Annealing (RTA). The influence of the deposition pressure (0.125–4.5 Pa) and annealing conditions on the optical and electrical properties of the thin films is investigated. The chemical composition of the as-deposited films, checked by Rutherford Backscattering Spectroscopy (RBS), is close to that of the ceramic target used for the deposition. The crystal structure is confirmed to be orthorhombic by X-ray diffraction. We highlight an improvement of the optical and electrical properties of the films after RTA treatment. Moreover, a net gain is obtained by comparison with conventional thermal treatment procedures in classical furnaces, especially for the reduction of electrical defect densities. 相似文献
8.
Ta2O5 thin films were deposited by DC reactive magnetron sputtering followed by rapid thermal annealing(RTA). Influence of sputtering pressure and annealing temperature on surface characteristics, microstructure and optical property of Ta2O5 thin films were investigated. As-deposited Ta2O5 thin films are amorphous. It takes hexagonal structure (δ-Ta2O5) after being annealed at 800 ℃. A transition from δ-Ta2O5 to orthorhombic structure (L-Ta2O5) occurs at 900-1 000 ℃. Surface roughness is decreased after annealing at low temperature. Refractive index and extinction coefficient are decreased when annealing temperature is increased. 相似文献
9.
《中国有色金属学会会刊》2021,31(12):3772-3784
Cu−0.15Zr (wt.%) alloy with uniform and fine microstructure was fabricated by rapid solidification followed by hot forging. Evolution of microstructure, mechanical properties and electrical conductivity of the alloy during elevated-temperature annealing were investigated. The alloy exhibits good thermal stability, and its strength decreases slightly even after annealing at 700 °C for 2 h. The nano-sized Cu5Zr precipitates show significant pinning effect on dislocation moving, which is the main reason for the high strength of the alloy. Additionally, the large-size Cu5Zr precipitates play a major role in retarding grain growth by pinning the grain boundaries during annealing. After annealing at 700 °C for 2 h, the electrical conductivity of samples reaches the peak value of 88% (IACS), which is attributed to the decrease of vacancy defects, dislocations, grain boundaries and Zr solutes. 相似文献
10.
利用溶胶凝胶工艺在Pt电极上沉积了PZT薄膜,选用传统退火及其快速退火工艺制备两种Pt基底(CTA-Pt和RTA-Pt),并采用X射线衍射广角及其ù扫描技术分别研究了Pt电极退火工艺对溶胶凝胶PZT结构及其织构演化的影响.研究结果显示:在传统退火工艺制备Pt电极上沉积的薄膜为(111)择优取向,而在快速退火工艺制备Pt电极上沉积的薄膜表现为(100)织构;分析表明PZT薄膜的织构演化可能与Pt电极在不同退火工艺下的内应力差异有关. 相似文献
11.
Hsin Wang Govindarajan Muralidharan Donovan N. Leonard J. Allen Haynes Wallace D. Porter Roger D. England Michael Hays Gopal Dwivedi Sanjay Sampath 《Journal of Thermal Spray Technology》2018,27(3):371-378
Multilayer, graded ceramic/metal coatings were prepared by an air plasma spray method on Ti-6Al-4V, 4140 steel and graphite substrates. The coatings were designed to provide thermal barriers for diesel engine pistons to operate at higher temperatures with improved thermal efficiency and cleaner emissions. A systematic, progressive variation in the mixture of yttria-stabilized zirconia and bondcoat alloys (NiCoCrAlYHfSi) was designed to provide better thermal expansion match with the substrate and to improve thermal shock resistance and cycle life. Heat transfer through the layers was evaluated by a flash diffusivity technique based on a model of one-dimensional heat flow. The aging effect of the as-sprayed coatings was captured during diffusivity measurements, which included one heating and cooling cycle. The hysteresis of thermal diffusivity due to aging was not observed after 100-h annealing at 800 °C. The measurements of coatings on substrate and freestanding coatings allowed the influence of interface resistance to be evaluated. The microstructure of the multilayer coating was examined using scanning electron microscope and electron probe microanalysis. 相似文献
12.
采用射频磁控溅射法在Si衬底上制备新型栅介质SrHfON薄膜。采用X射线衍射(XRD)仪、高分辨透射电镜(HRTEM)和X射线光电子谱(XPS)分析退火对SrHfON薄膜的界面形态、薄膜的结构和电学性能的影响。结果表明,SrHfON薄膜经900℃退火后仍保持非晶态,表现出良好的热稳定性。SrHfON薄膜与Si衬底的界面主要由HfSixOy和SiO2组成。以SrHfON薄膜为栅介质的MOS电容结构具有较小的漏电流密度,并且漏电流密度随着退火温度的升高而减小。在外加偏压(Vg)为+1V时样品在沉积态和900℃退火后的漏电流密度分别为4.3×10-6和1.2×10-7A/cm2。研究表明,SrHfON薄膜是一种很有希望替代SiO2的新型栅介质材料。 相似文献
13.
We have fabricated hybrid bulk heterojunction solar cells with blends of MEH-PPV (poly[2-methoxy,5-(2-ethylhexoxy)-1,4-phenylene vinylene]) and nano-CdS as electron donor and electron acceptor, respectively. The effect of thermal annealing was investigated with impedance spectroscopy (IS) and capacitance–voltage (C–V) characteristic measurements on devices. The IS and C–V characteristic manifested very different before and after thermal annealing. We performed equivalent circuit to explain the effect of thermal annealing. The thermal treatment of nanocrystal–polymer films is seen to aid in the formation of a continuous network for electron transport between nanorods, and hence improves devices performance. The method based on the IS is available to probe the microstructure of hybrid bulk heterojunction solar cells before and after thermal annealing, and therefore detect the mechanism for the annealing improvements. 相似文献
14.
Evaporated multilayer sandwich structure of Au/NiPc/Al was fabricated by thermal evaporation technique. The electrical conductivity of Au/NiPc/Al device has been measured both as prepared and after annealing at 623 K for 2 h. Under forward bias conditions, ohmic and SCLC conductions were identified at low and higher voltages respectively. After annealing, a strong rectifying effect was observed. The potential barrier height and the depletion region width for annealed sample were calculated as 0.96 eV and 70 nm, respectively. Hole and trap parameters for as prepared and after annealing devices, also, were evaluated. 相似文献
15.
利用控制In气氛下的热处理工艺成功地制备了CdZnTe:In。不同In压下(Cd,Zn分压保持在平衡分压)的热处理实验结果表明:热处理后样品的电阻率可从6.75×10^5Ω·cm提高到10^8~10^1010Ω·cm;并且随着In压的增加,导电类型逐渐由p型转变为n型。热处理后样品的电阻率变化特征可以由In的扩散和施主缺陷InCd、受主缺陷VCd之间的补偿作用来很好地解释。利用扩散理论建立了CdZnTe:In的电阻率物理模型。利用热处理后样品的电阻率数据,计算了在873,973和1073K时In原子在CZT晶体中的有效扩散系数DIn,分别为3.455×10^-11,2.625×10^-10和5.17×10^-9cm^2/s。将扩散数据经过拟合后得到了DIn的表达式:1.35exp(-1.85eV/kT)cm^2/s(873~1073K)。 相似文献
16.
Single-wafer rapid thermal processing, which has become indispensable in the present-day manufacture of integrated circuits,
has replaced batch furnace processing to satisfy device and production requirements for reduced thermal budget, process uniformity,
high throughput, ease of process development, and low manufacturing cost. To meet the requirements for critical applications,
rapid thermal annealing (RTA) techniques have been developed. For example, RTA is used to form ultrashallow junctions in complementarymetal-oxide
semiconductor transistors with 10-nm-scale gate lengths. This paper discusses approaches to realize the needed rapidity and
uniformity in RTA processes, some of which combine radiative, convective, and conductive heat transfer, to control the rapid
thermal cycling of silicon wafers for various processes requiring peak temperatures in the range of 200°C to 1,350°C.
A.T. Fiory is with the Department of Physics at the New Jersey Institute of Technology in Newark, New Jersey. 相似文献
17.
In Sung Kim Soon Jong Jeong Jae Sung Song Pan Seok Shin 《Metals and Materials International》2002,8(6):577-582
The present study describes the dielectric properties of RF sputtered Ta2O5 thin films as a function of the buffer layer and annealing condition. The buffer layers were Ti or TiO2. And the thin film was annealed in various conditions. The X-ray pattern results showed that the phase of the RF sputtered
Ta2O5 thin films was amorphous and this state was kept stable to RTA (rapid thermal annealing) even at 700°C. Measurements of the
electrical and dielectric properties of the reactive sputtered Ta2O5 fabricated in two simple metal insulator semiconductor (MIS) structures, (Cu/Ta2O5/Ti/Si/Cu and Cu/Ta2O5/TiO2/Si/Cu) indicated that the amorphous Ta2O5 grown on Ti possesses a high dielectric constant (30–70) and high leakage current (10−1–10−4 A/cm2), whereas a relatively low dielectric constant (−10) and low leakage current (−10−10 A/cm2) were observed in the amorphous Ta2O5 deposited on the TiO2 buffer layer. In addition, the leakage current mechanisms of the two amorphous Ta2O5 thin films were investigated by plotting the relation of current density (J) vs. applied electric field (E). The Ta2O5/Ti film exhibited three dominant conduction mechanism regimes contributed by the Ohmic emission at low electrical field,
by the Schottky emission at intermediate field and by the Poole-Frenkel emission at high field. In the case of Ta2O5/TiO2 film, the two conduction mechanisms, the Ohmic and Schottky emissions, governed the leakage current density behavior. The
conduction mechanisms at various electric fields applied were related to the diffusion of Ta, Ti and O, followed by the creation
of vacancies, in the rapid thermal treated capacitors. 相似文献
18.
We prepared SOI (silicon-on-insulator) wafer pairs of 2000 Å-SiO2/Si(100) and 560 å-Si3N4/Si(100) by CFA (Conventional electric Fumace Annealing), RTA (Rapid Thermal Annealing), and FLA (Fast Linear Annealing) at different annealing temperatures for each annealing process. We measured the bonding area and the bonding strength for the respective processes. It was demonstrated that the measured bonding area was close to 100% above 450°C for RTA, and 400°C for CFA. The maximum bond strength of the SiO2/Si3N4 wafer pair was 2344, 2300, and 195 mJ/m2 for CFA, FLA, and RTA, respectively. We clearly demonstrated that the FLA method is far superior in producing high-quality directly bonded Si wafer pairs with SiO2 and Si3N4films compared to the CFA and RTA methods. 相似文献
19.
Ioan Vida-Simiti Dorel Nemes Nicolaie Jumate Gyorgy Thalmaier Niculina Sechel 《JOM Journal of the Minerals, Metals and Materials Society》2012,64(10):1143-1147
Anodic aluminum oxide (AAO) membranes with highly ordered nanopores serve as ideal templates for the formation of various nanostructured materials. The procedure of the template preparation is based on a two-step self-organized anodization of aluminum. In the current study, AAO templates were fabricated in 0.3?M oxalic acid under the anodizing potential range of 30?C60?V at an electrolyte temperature of ~5°C. The AAO templates were analyzed using scanning electron microscopy, x-ray diffraction, Fourier-transform infrared spectroscopy, and differential thermal analysis. The as obtained layers are amorphous; the mean pore size is between 40?nm and 75?nm and increases with the increase of the anodization potential. Well-defined pores across the whole aluminum template, a pore density of ~1010?pores/cm2, and a tendency to form a porous structure with hexagonal symmetry were observed. 相似文献
20.
The CoSb3/electrode thermoelectric (TE) joints were fabricated with the insertion of Ti foil by spark plasma sintering (SPS). The interfacial microstructure evolution and reliability of joints were investigated during accelerated thermal aging. After thermal aging, a multi-layer structure, which was composed of intermetallic compounds (IMCs), was observed at the CoSb3/Ti interface. The growth kinetics of IMC layers was studied. The theoretic life of CoSb3/electrode joints was predicted using the growth rate of IMC layers. The shear strength of aged CoSb3/electrode joints was also tested and the results showed the joints had sufficient strength for keeping the reliability of TE device. Scanning electron microscopy (SEM) showed that, in the aged sample, all fracture occurred inside of the IMC layers, while the fracture occurred in the Ti layer or Ti/TiSb interface in the un-aged sample. The results of four-probe tests showed that the electrical contact of CoSb3/electrode joint was good. 相似文献