Modeling on oxide dependent 2DEG sheet charge density and threshold voltage in AlGaN/GaN MOSHEMT

We have developed a physics based analytical model for the calculation of threshold voltage, two dimensional electron gas (2DEG) density and surface potential for AlGaN/GaN metal oxide semiconductor high electron mobility transistors (MOSHEMT). The developed model includes important parameters like polarization charge density at oxide/AlGaN and AlGaN/GaN interfaces, interfacial defect oxide charges and donor charges at the surface of the AlGaN barrier. The effects of two different gate oxides (Al₂O₃ and HfO₂) are compared for the performance evaluation of the proposed MOSHEMT. The MOSHEMTs with Al₂O₃ dielectric have an advantage of significant increase in 2DEG up to 1.2×10¹³ cm^-2 with an increase in oxide thickness up to 10 nm as compared to HfO₂ dielectric MOSHEMT. The surface potential for HfO₂ based device decreases from 2 to -1.6 eV within 10 nm of oxide thickness whereas for the Al₂O₃ based device a sharp transition of surface potential occurs from 2.8 to -8.3 eV. The variation in oxide thickness and gate metal work function of the proposed MOSHEMT shifts the threshold voltage from negative to positive realizing the enhanced mode operation. Further to validate the model, the device is simulated in Silvaco Technology Computer Aided Design (TCAD) showing good agreement with the proposed model results. The accuracy of the developed calculations of the proposed model can be used to develop a complete physics based 2DEG sheet charge density and threshold voltage model for GaN MOSHEMT devices for performance analysis.     

Modeling and analysis of self-similar traffic source based on fractal-binomial-noise-driven Poisson process

~~Modeling and analysis of self-similar traffic source based on fractal-binomial-noise-driven Poisson process1. Will E L, Murad S T, Walter W, et al. On the self-similarity nature of Ethernet traffic (extended version). IEEE/ACM Transactions on Networking…     

Two-Dimensional Static Numerical Modeling and Simulation of AlGaN/GaN HEMT

考虑AlGaN/GaN材料的自发、压电极化效应和量子效应,通过泊松方程、薛定谔方程和流体力学方程组的数值自洽求解方法,对AlGaN/GaN HEMT的二维静态模型与模拟问题进行了研究,得到了器件区域的导带图、二维电子气分布、电子温度特性、直流输出和转移特性,并对模拟结果进行了分析与讨论.     

一种具有N埋层的AlGaN/GaN高电子迁移率晶体管

为了进一步提高GaN HEMT器件的击穿电压,并保持低的导通电阻,文中提出了一种具有N型GaN埋层的AlGaN/GaN HEMT.该埋层通过调整器件的电场分布,降低了高场区的电场峰值,从而降低器件关断时的泄漏电流.该埋层使得栅漏之间的横向沟道电场分布更加均匀,提高了器件的击穿电压.通过Sentaurus TCAD仿真发...