量子点的原子力显微镜测试结果分析:数学形态学的实现

提出了从原子力显微镜(AFM)照片中分割出量子点的算法,可以利用程序自动地统计照片中量子点的各种数据.该算法基于数学形态学的方法,包括三个步骤:首先根据照片中每个局部最高点的dynamics值,利用标记分水岭分割方法初步将每个量子点分开;第二步根据量子点的定义,从每个区域中提取出量子点;第三步,为了防止分割过程中将部分衬底一起提取,利用量子点的高度-面积分布,将多余衬底滤去.该算法具有快速、对噪声不敏感的特点,能准确地提取量子点的高度、横向尺寸、体积等数据.     

半导体量子点自组织生长过程的控制

对控制半导体量子点的自组织生长进行了研究.在对平均场模型和非平均场模型计算机模拟结果分析的基础上,提出了利用隔离单元抑制量子点的熟化生长的方法来控制量子点的大小,并对生长过程进行了计算机模拟.结果表明通过将衬底表面的吸附原子海分割成一个个独立的隔离单元可以抑制量子点熟化生长,调节量子点的生长速度,达到制备大小均匀、排列有序的半导体量子点阵列的目的.     

半导体量子点自组织生长过程的控制

对控制半导体量子点的自组织生长进行了研究.在对平均场模型和非平均场模型计算机模拟结果分析的基础上,提出了利用隔离单元抑制量子点的熟化生长的方法来控制量子点的大小,并对生长过程进行了计算机模拟.结果表明通过将衬底表面的吸附原子海分割成一个个独立的隔离单元可以抑制量子点熟化生长,调节量子点的生长速度,达到制备大小均匀、排列有序的半导体量子点阵列的目的.     

半导体量子点自组织生长过程的控制

对控制半导体量子点的自组织生长进行了研究. 在对平均场模型和非平均场模型计算机模拟结果分析的基础上，提出了利用隔离单元抑制量子点的熟化生长的方法来控制量子点的大小，并对生长过程进行了计算机模拟. 结果表明通过将衬底表面的吸附原子海分割成一个个独立的隔离单元可以抑制量子点熟化生长，调节量子点的生长速度，达到制备大小均匀、排列有序的半导体量子点阵列的目的.     

一种从激光雷达点云中提取建筑物模型的方法

提出了针对机载激光雷达点云的建筑物三维模型提取方法.首先通过滤波从点云中提取数字地形模型(DTM),再从数字表面模型(DSM)中剔除DTM影响,得到正规化数字表面模型(nDSM);然后通过高程滤波和双边滤波从nDSM中得到建筑物区域;在建筑物几何形状约定下,将建筑物分"层"处理,通过边缘探测与规格化算法得到每"层"建筑物的边缘;边缘点坐标构成了建筑物三维模型的基础.该方法借助数学形态学易于计算机处理的优点,能较为快速、准确地提取建筑物三维模型,适合大规模、快速、对精度要求不高的lidar数据提取.最后通过数据验证了该方法的可行性及有效性.     

GaSb量子点液相外延生长

采用改进的快速推舟液相外延技术在GaAs衬底上成功地生长了GaSb量子点材料.通过原子力显微镜观测了不同生长参数下GaSb量子点材料的形貌(形状、尺寸、密度、尺寸分布均匀性等).分析了不同衬底、不同生长源配比、生长源与衬底的不同接触时间等生长条件参数对GaSb量子点生长的影响.研究表明在GaAs衬底上、富镓生长源配比以及较短的生长源和衬底接触时间下更易获得高质量的GaSb量子点.上述生长条件的摸索和研究对于GaSb量子点器件应用具有重要意义.     

Ge/Si量子点的生长研究进展

要有效应用SK模式生长的Ge量子点,必须实现Ge量子点的位置可控并且进一步缩小Ge量子点的尺寸.阐释了这方面的研究进展,特别对图形衬底生长Ge量子点,利用Si表面的自组织性在错切割的邻晶面衬底上生长有序Ge岛,表面杂质诱导成岛这三个方面的进展加以介绍分析.     

GaAs图形衬底上InAs量子点生长停顿的动力学蒙特卡罗模拟

采用动力学蒙特卡罗模拟方法对GaAs图形衬底上自组织生长InAs量子点的停顿过程进行了研究.用衬底束缚能的表面分布模拟衬底图形,考察生长之后的停顿时间对量子点形成的影响.结果表明,合适的停顿时间使图形衬底上的量子点分布更趋规则化,对量子点的定位生长有积极的影响.     

基于数学形态学的空空导弹导引头红外图像处理

红外成像制导导弹的图像分割是图像处理中的重点和难点之一。将数学形态学图像处理算法应用于导引头红外图像分割 ,提出一种新的分割方法。首先 ,利用形态学方法估计出导引头红外图像中的背景图像 ;其次 ,利用原始图像减去背景图像得到差图像 ,以消除不均匀背景对图像分割的影响 ;再次 ,利用阈值算法将差图像转换成二值图像 ;最后 ,应用形态学方法消除噪声 ,根据目标图像属性的连贯性实现目标检测。仿真分析表明 ,该分割算法具有较好分割效果     

基于冗余小波变换的高频地波雷达目标检测算法

为了从高频地波雷达(High Frequency Surface Wave Radar, HFSWR)信号生成的复杂距离多普勒(Range Doppler, RD)图像中准确提取运动点目标, 提出了一种基于冗余小波变换(Redundant Discrete Wavelet Transformation, RDWT)的RD图像点目标检测算法.该算法根据点目标与海杂波、电离层杂波等特征的差异, 首先在距离方向进行自适应RDWT以去除海杂波和地杂波, 并在多普勒方向进行自适应RDWT以去除电离层杂波; 然后利用图像形态学运算对背景噪声进行了抑制; 最后进行阈值自适应分割以得到点目标.实验结果表明:该算法能有效抑制RD图像中的海杂波、电离层杂波和背景噪声, 能从复杂的RD图像中实现点目标的有效检测, 其检测性能优于改进的恒虚警率(Constant False Alarm Rate, CFAR)算法.     

基于FPGA的量子点波形VGA显示与标记方法研究

提出一种基于FPGA和硬件描述语言Verilog HDL实现STM-MBE量子点波形VGA显示与标记的方法,利用FPGA片内ROM,将量子点生长实验中量子点的高度数据波形显示在VGA显示器上;同时利用FPGA的控制优势及处理图像的高效性,实现对所有在VGA显示器上显示的波形图做手动和自动标记,便于分析量子点生长的优劣,以及描述量子点的表面形貌。通过量子点波形显示实验,得到了显示效果较好的量子点波形图,显示波形图上的任意点也能被手动和自动做标记。     

Spatially resolved spectroscopy on single self-assembled quantum dots

We report about spatially resolved experiments on self-assembled InGaAs quantum dots. Single quantum dots can be investigated by using STM-induced luminescence spectroscopy. The quantum dot occupancy can be increased via the STM tip current, which results in state filling and therefore in the onset of discrete excited state luminescence. In the limit of low injection currents, a single emission line from the ground state of the dot is observed. Using near-field spectroscopy through shadow masks, we have investigated the optical properties of single self-assembled InGaAs quantum dots as a function of occupancy and magnetic field. This allows us to fully resolve diamagnetic/orbital effects, Zeeman splitting, and to determine manybody-corrections. Photoluminescence excitation spectra further reveal a strong contribution of phonon assisted processes in quantum dot absorption.     

Charging energy and spin polarization in artificial atoms and molecules

We investigate the electronic properties of single and coupled quantum dot systems by a self-consistent solution of Schrödinger and Poisson equations within the density functional theory. The single and coupled quantum dots show remarkable similarities to atoms and molecules. We observe that in the case of single quantum dots with cylindrical symmetry, the electrons in the dot form shells like in atoms. This sheel structure is slightly distorted due to the electron-electron interaction, as the number of electrons, N, increases. In the case of coupled quantum dots, we observe that the dots can be driven from a state wherein the individual dots are separate, akin to two isolated atoms, to one in which the dots couple forming an “artificial molecule.” By using the local spin density approximation, we observe spin polarization in the double dot for specific values of N.     

Numerical simulation of optical feedback on a quantum dot lasers

We use multi-population rate equations model to study feedback oscillations in the quantum dot laser. This model takes into account all peculiar characteristics in the quantum dots such as inhomogeneous broadening of the gain spectrum, the presence of the excited states on the quantum dot and the non-confined states due to the presence of wetting layer and the barrier. The contribution of quantum dot groups, which cannot follow by other models, is simulated. The results obtained from this model show the feedback oscillations, the periodic oscillations which evolves to chaos at higher injection current of higher feedback levels. The frequency fluctuation is attributed mainly to wetting layer with a considerable contribution from excited states. The simulation shows that is must be not using simple rate equation models to express quantum dots working at excited state transition.     

Role of thermal ejection of carriers in the burning of spatial holes in quantum dot lasers

The role of thermal carrier ejection from quantum dots and free carrier diffusion in the burning of spatial holes in semiconductor quantum dot lasers is analyzed. The balance of the spatially inhomogeneous population inversion in the longitudinal direction of the cavity is shown to be controlled by thermal ejection from quantum dots. Because of this circumstance, hole burning in quantum dot lasers can show up more strongly and the threshold for multimode lasing can be lower than in semiconductor lasers with three-dimensional active regions or quantum-well lasers. The threshold for multimode lasing is determined as a function of the dispersion in the quantum dot size, cavity length, and temperature for structures that have been optimized to minimize the threshold current density of the fundamental mode. Fiz. Tekh. Poluprovodn. 33, 1076–1079 (September 1999)     

Photoluminescence of strain-induced coupled InGaAs/GaAs quantum-dot pairs

Coupled quantum dot-pairs were fabricated by growing InP self-assembled islands as stressors on InGaAs/GaAs double quantum wells. State filling in the photoluminescence spectra was used to resolve the quantum states in the coupled dots. The total strain field below the stressor decays exponentially with a penetration depth of about 25 nm, within which a dot-pair can be fabricated. Strong coupling is observed at a barrier width less than 4 nm separating the dot-pair. By increasing the indium composition in the lower well in order to match its dot level with one in the upper dot with identical quantum numbers, resonant coupling between the electron states with identical quantum numbers in the two dots can be achieved. Decoupling of the hole states and exchange of the electron bonding states from dominating the upper dot to the lower one are clearly resolved from the state energies and their spacings.     

Facetting of the self-assembled droplet epitaxial GaAs quantum dot

In this work, droplet epitaxially grown GaAs quantum dots on AlGaAs surface are studied. The quantum dots are investigated in situ with RHEED and ex situ with TEM method. The TEM picture shows that the quantum dot is perfectly crystalline and fits very well to the crystal structure of the substrate. Furthermore, the side of the quantum dot shows stepped facet shape. Here, we show, how the stepped side shape forms from the droplet during crystallization. The RHEED picture shows broadened chevron-tail, which can be explained by the shape of the quantum dot.     

Effect of quantum dot shape on dynamical dephasing suppression in exciton qubits under applied electric field

We investigate the efficiency of periodic dynamical decoupling of an exciton qubit confined in a self-assembled quantum dot in the presence of an applied electric field. The shape of the quantum dot is found to have a large effect on the excitonic dephasing. It is shown that dynamical suppression of dephasing, through a simple series of equally spaced bit flips, is most efficient for quantum dots that are close to spherical. In addition, compared to the no field case, the presence of an electric field increases the efficiency of the decoupling technique as the quantum dot becomes more oblate. Our calculations show that dephasing can be significantly suppressed in GaAs/AlAs quantum dots suitable for quantum information processing.     

Soft‐Lithographed Up‐Converted Distributed Feedback Visible Lasers Based on CdSe–CdZnS–ZnS Quantum Dots

The development of a solution‐deposited up‐converted distributed feedback laser prototype is presented. It employs a sol–gel silica/germania soft‐lithographed microcavity and CdSe–CdZnS–ZnS quantum dot/sol–gel zirconia composites as optical gain material. Characterization of the linear and nonlinear optical properties of quantum dots establishes their high absorption cross‐sections in the one‐ and two‐ photon absorption regimes to be 1 × 10^?14 cm² and 5 × 10⁴ GM, respectively. In addition, ultrafast transient absorption dynamics measurements of the graded seal quantum dots reveal that the Auger recombination lifetime is 220 ps, a value two times higher than that of the corresponding CdSe core. These factors enable the use of such quantum dots as optically pumped gain media, operating in the one‐ and two‐photon absorption regime. The incorporation of CdSe–CdZnS–ZnS quantum dots within a zirconia host matrix affords a quantum‐dot ink that can be directly deposited on our soft‐lithographed distributed feedback grating to form an all‐solution‐processed microcavity laser.