Synthesis of Large‐Size 1T′ ReS2xSe2(1−x) Alloy Monolayer with Tunable Bandgap and Carrier Type

Chemical vapor deposition growth of 1T′ ReS_2x Se_{2(1?x )} alloy monolayers is reported for the first time. The composition and the corresponding bandgap of the alloy can be continuously tuned from ReSe₂ (1.32 eV) to ReS₂ (1.62 eV) by precisely controlling the growth conditions. Atomic‐resolution scanning transmission electron microscopy reveals an interesting local atomic distribution in ReS_2x Se_{2(1?x )} alloy, where S and Se atoms are selectively occupied at different X sites in each Re‐X₆ octahedral unit cell with perfect matching between their atomic radius and space size of each X site. This structure is much attractive as it can induce the generation of highly desired localized electronic states in the 2D surface. The carrier type, threshold voltage, and carrier mobility of the alloy‐based field effect transistors can be systematically modulated by tuning the alloy composition. Especially, for the first time the fully tunable conductivity of ReS_2x Se_{2(1?x )} alloys from n‐type to bipolar and p‐type is realized. Owing to the 1T′ structure of ReS_2x Se_{2(1?x )} alloys, they exhibit strong anisotropic optical, electrical, and photoelectric properties. The controllable growth of monolayer ReS_2x Se_{2(1?x )} alloy with tunable bandgaps and electrical properties as well as superior anisotropic feature provides the feasibility for designing multifunctional 2D optoelectronic devices.     

Carrier Modulation in 2D Transistors by Inserting Interfacial Dielectric Layer for Area-Efficient Computation

2D materials with atomic thickness display strong gate controllability and emerge as promising materials to build area-efficient electronic circuits. However, achieving the effective and nondestructive modulation of carrier density/type in 2D materials is still challenging because the introduction of dopants will greatly degrade the carrier transport via Coulomb scattering. Here, a strategy to control the polarity of tungsten diselenide (WSe₂) field-effect transistors (FETs) via introducing hexagonal boron nitride (h-BN) as the interfacial dielectric layer is devised. By modulating the h-BN thickness, the carrier type of WSe₂ FETs has been switched from hole to electron. The ultrathin body of WSe₂, combined with the effective polarity control, together contribute to the versatile single-transistor logic gates, including NOR, AND, and XNOR gates, and the operation of only two transistors as a half adder in logic circuits. Compared with the use of 12 transistors based on static Si CMOS technology, the transistor number of the half adder is reduced by 83.3%. The unique carrier modulation approach has general applicability toward 2D logic gates and circuits for the improvement of area efficiency in logic computation.     

Homogeneous 2D MoTe2 p–n Junctions and CMOS Inverters formed by Atomic‐Layer‐Deposition‐Induced Doping

Recently, α‐MoTe₂, a 2D transition‐metal dichalcogenide (TMD), has shown outstanding properties, aiming at future electronic devices. Such TMD structures without surface dangling bonds make the 2D α‐MoTe₂ a more favorable candidate than conventional 3D Si on the scale of a few nanometers. The bandgap of thin α‐MoTe₂ appears close to that of Si and is quite smaller than those of other typical TMD semiconductors. Even though there have been a few attempts to control the charge‐carrier polarity of MoTe₂, functional devices such as p–n junction or complementary metal–oxide–semiconductor (CMOS) inverters have not been reported. Here, we demonstrate a 2D CMOS inverter and p–n junction diode in a single α‐MoTe₂ nanosheet by a straightforward selective doping technique. In a single α‐MoTe₂ flake, an initially p‐doped channel is selectively converted to an n‐doped region with high electron mobility of 18 cm² V^?1 s^?1 by atomic‐layer‐deposition‐induced H‐doping. The ultrathin CMOS inverter exhibits a high DC voltage gain of 29, an AC gain of 18 at 1 kHz, and a low static power consumption of a few nanowatts. The results show a great potential of α‐MoTe₂ for future electronic devices based on 2D semiconducting materials.     

Homogeneous 2D MoTe2 CMOS Inverters and p–n Junctions Formed by Laser‐Irradiation‐Induced p‐Type Doping

Among all typical transition‐metal dichalcogenides (TMDs), the bandgap of α‐MoTe₂ is smallest and is close to that of conventional 3D Si. The properties of α‐MoTe₂ make it a favorable candidate for future electronic devices. Even though there are a few reports regarding fabrication of complementary metal–oxide‐semiconductor (CMOS) inverters or p–n junction by controlling the charge‐carrier polarity of TMDs, the fabrication process is complicated. Here, a straightforward selective doping technique is demonstrated to fabricate a 2D p–n junction diode and CMOS inverter on a single α‐MoTe₂ nanoflake. The n‐doped channel of a single α‐MoTe₂ nanoflake is selectively converted to a p‐doped region via laser‐irradiation‐induced MoO_x doping. The homogeneous 2D MoTe₂ CMOS inverter has a high DC voltage gain of 28, desirable noise margin (NM_H = 0.52 V_DD, NM_L = 0.40 V_DD), and an AC gain of 4 at 10 kHz. The results show that the doping technique by laser scan can be potentially used for future larger‐scale MoTe₂ CMOS circuits.     

Novel Molecular Doping Mechanism for n‐Doping of SnO2 via Triphenylphosphine Oxide and Its Effect on Perovskite Solar Cells

Molecular doping of inorganic semiconductors is a rising topic in the field of organic/inorganic hybrid electronics. However, it is difficult to find dopant molecules which simultaneously exhibit strong reducibility and stability in ambient atmosphere, which are needed for n‐type doping of oxide semiconductors. Herein, successful n‐type doping of SnO₂ is demonstrated by a simple, air‐robust, and cost‐effective triphenylphosphine oxide molecule. Strikingly, it is discovered that electrons are transferred from the R3P⁺? O^?σ‐bond to the peripheral tin atoms other than the directly interacted ones at the surface. That means those electrons are delocalized. The course is verified by multi‐photophysical characterizations. This doping effect accounts for the enhancement of conductivity and the decline of work function of SnO₂, which enlarges the built‐in field from 0.01 to 0.07 eV and decreases the energy barrier from 0.55 to 0.39 eV at the SnO₂/perovskite interface enabling an increase in the conversion efficiency of perovskite solar cells from 19.01% to 20.69%.     

Enhancing Molecular n‐Type Doping of Donor–Acceptor Copolymers by Tailoring Side Chains

In this contribution, for the first time, the molecular n‐doping of a donor–acceptor (D–A) copolymer achieving 200‐fold enhancement of electrical conductivity by rationally tailoring the side chains without changing its D–A backbone is successfully improved. Instead of the traditional alkyl side chains for poly{[N,N′‐bis(2‐octyldodecyl)‐naphthalene‐1,4,5,8‐bis(dicarboximide)‐2,6‐diyl](NDI)‐alt‐5,5′‐(2,2′‐bithiophene)} (N2200), polar triethylene glycol type side chains is utilized and a high electrical conductivity of 0.17 S cm^?1 after doping with (4‐(1,3‐dimethyl‐2,3‐dihydro‐1H‐benzoimidazol‐2‐yl)phenyl)dimethylamine is achieved, which is the highest reported value for n‐type D–A copolymers. Coarse‐grained molecular dynamics simulations indicate that the polar side chains can significantly reduce the clustering of dopant molecules and favor the dispersion of the dopant in the host matrix as compared to the traditional alkyl side chains. Accordingly, intimate contact between the host and dopant molecules in the NDI‐based copolymer with polar side chains facilitates molecular doping with increased doping efficiency and electrical conductivity. For the first time, a heterogeneous thermoelectric transport model for such a material is proposed, that is the percolation of charge carriers from conducting ordered regions through poorly conductive disordered regions, which provides pointers for further increase in the themoelectric properties of n‐type D–A copolymers.     

Unveiling Active Sites for the Hydrogen Evolution Reaction on Monolayer MoS2

Here, the hydrogen evolution reaction (HER) activities at the edge and basal‐plane sites of monolayer molybdenum disulfide (MoS₂) synthesized by chemical vapor deposition (CVD) are studied using a local probe method enabled by selected‐area lithography. Reaction windows are opened by e‐beam lithography at sites of interest on poly(methyl methacrylate) (PMMA)‐covered monolayer MoS₂ triangles. The HER properties of MoS₂ edge sites are obtained by subtraction of the activity of the basal‐plane sites from results containing both basal‐plane and edge sites. The catalytic performances in terms of turnover frequencies (TOFs) are calculated based on the estimated number of active sites on the selected areas. The TOFs follow a descending order of 3.8 ± 1.6, 1.6 ± 1.2, 0.008 ± 0.002, and 1.9 ± 0.8 × 10^?4 s^?1, found for 1T′‐, 2H‐MoS₂ edges, and 1T′‐, 2H‐MoS₂ basal planes, respectively. Edge sites of both 2H‐ and 1T′‐MoS₂ are proved to have comparable activities to platinum (≈1–10 s^?1). When fitted into the HER volcano plot, the MoS₂ active sites follow a trend distinct from conventional metals, implying a possible difference in the reaction mechanism between transition‐metal dichalcogenides (TMDs) and metal catalysts.     

Multifunctional MoS2 Transistors with Electrolyte Gel Gating

MoS₂, one of the most valued 2D materials beyond graphene, shows potential for future applications in postsilicon digital electronics and optoelectronics. However, achieving hole transport in MoS₂, which is dominated by electron transport, is always a challenge. Here, MoS₂ transistors gated by electrolyte gel exhibit the characteristics of hole and electron transport, a high on/off ratio over 10⁵, and a low subthreshold swing below 50 mV per decade. Due to the electrolyte gel, the density of electrons and holes in the MoS₂ channel reaches ≈9 × 10¹³ and 8.85 × 10¹³ cm^?2, respectively. The electrolyte gel‐assisted MoS₂ phototransistor exhibits adjustable positive and negative photoconductive effects. Additionally, the MoS₂ p–n homojunction diode affected by electrolyte gel shows high performance and a rectification ratio over 10⁷. These results demonstrate that modifying the conductance of MoS₂ through electrolyte gel has great potential in highly integrated electronics and optoelectronic photodetectors.     

Phase‐Controlled Synthesis of Monolayer W1−xRexS2 Alloy with Improved Photoresponse Performance

Tuning bandgap and phases in the ternary 2D transition metal dichalcogenides (TMDs) alloys has opened up unexpected opportunities to engineer optoelectronic properties and explore potential applications. In this work, a salt‐assisted chemical deposition vapor (CVD) growth strategy is reported for the creation of high‐quality monolayer W_1?xRe_xS₂ alloys to fulfill a readily phase control from 1H to DT by changing the ratio of Re and W precursors. The structures and chemical compositions of doping alloys are confirmed by combining atomic resolution scanning transmission electron microscopy‐annular dark field imaging with energy dispersive X‐ray spectroscopy (EDS) and X‐ray photoelectron spectroscopy, matching well with the calculated results. The field‐effect transistors (FETs) devices fabricated based on 1H‐W_0.9Re_0.1S₂ monolayer exhibit a n‐type semiconducting behavior with the mobility of 0.4 cm² V^?1 s^?1. More importantly, the FETs show high‐performance responsivity with a value of 17 µA W^?1 in air, which is superior to that of monolayer CVD‐grown WS₂. This work paves the way toward synthesizing monolayer ternary alloys with controlled phases for potential optoelectronic applications.     

Phase Modulation of (1T‐2H)‐MoSe2/TiC‐C Shell/Core Arrays via Nitrogen Doping for Highly Efficient Hydrogen Evolution Reaction

Tailoring molybdenum selenide electrocatalysts with tunable phase and morphology is of great importance for advancement of hydrogen evolution reaction (HER). In this work, phase‐ and morphology‐modulated N‐doped MoSe₂/TiC‐C shell/core arrays through a facile hydrothermal and postannealing treatment strategy are reported. Highly conductive TiC‐C nanorod arrays serve as the backbone for MoSe₂ nanosheets to form high‐quality MoSe₂/TiC‐C shell/core arrays. Impressively, continuous phase modulation of MoSe₂ is realized on the MoSe₂/TiC‐C arrays. Except for the pure 1T‐MoSe₂ and 2H‐MoSe₂, mixed (1T‐2H)‐MoSe₂ nanosheets are achieved in the N‐MoSe₂ by N doping and demonstrated by spherical aberration electron microscope. Plausible mechanism of phase transformation and different doping sites of N atom are proposed via theoretical calculation. The much smaller energy barrier, longer H? Se bond length, and diminished bandgap endow N‐MoSe₂/TiC‐C arrays with substantially superior HER performance compared to 1T and 2H phase counterparts. Impressively, the designed N‐MoSe₂/TiC‐C arrays exhibit a low overpotential of 137 mV at a large current density of 100 mA cm^?2, and a small Tafel slope of 32 mV dec^?1. Our results pave the way to unravel the enhancement mechanism of HER on 2D transition metal dichalcogenides by N doping.     

Impact of H‐Doping on n‐Type TMD Channels for Low‐Temperature Band‐Like Transport

Band‐like transport behavior of H‐doped transition metal dichalcogenide (TMD) channels in field effect transistors (FET) is studied by conducting low‐temperature electrical measurements, where MoTe₂, WSe₂, and MoS₂ are chosen for channels. Doped with H atoms through atomic layer deposition, those channels show strong n‐type conduction and their mobility increases without losing on‐state current as the measurement temperature decreases. In contrast, the mobility of unintentionally (naturally) doped TMD FETs always drops at low temperatures whether they are p‐ or n‐type. Density functional theory calculations show that H‐doped MoTe₂, WSe₂, and MoS₂ have Fermi levels above conduction band edge. It is thus concluded that the charge transport behavior in H‐doped TMD channels is metallic showing band‐like transport rather than thermal hopping. These results indicate that H‐doped TMD FETs are practically useful even at low‐temperature ranges.     

Slow Hot‐Carrier Cooling in Halide Perovskites: Prospects for Hot‐Carrier Solar Cells

Rapid hot‐carrier cooling is a major loss channel in solar cells. Thermodynamic calculations reveal a 66% solar conversion efficiency for single junction cells (under 1 sun illumination) if these hot carriers are harvested before cooling to the lattice temperature. A reduced hot‐carrier cooling rate for efficient extraction is a key enabler to this disruptive technology. Recently, halide perovskites emerge as promising candidates with favorable hot‐carrier properties: slow hot‐carrier cooling lifetimes several orders of magnitude longer than conventional solar cell absorbers, long‐range hot‐carrier transport (up to ≈600 nm), and highly efficient hot‐carrier extraction (up to ≈83%). This review presents the developmental milestones, distills the complex photophysical findings, and highlights the challenges and opportunities in this emerging field. A developmental toolbox for engineering the slow hot‐carrier cooling properties in halide perovskites and prospects for perovskite hot‐carrier solar cells are also discussed.     

A Chemically Doped Naphthalenediimide‐Bithiazole Polymer for n‐Type Organic Thermoelectrics

The synthesis of a novel naphthalenediimide (NDI)‐bithiazole (Tz2)‐based polymer [P(NDI2OD‐Tz2)] is reported, and structural, thin‐film morphological, as well as charge transport and thermoelectric properties are compared to the parent and widely investigated NDI‐bithiophene (T2) polymer [P(NDI2OD‐T2)]. Since the steric repulsions in Tz2 are far lower than in T2, P(NDI2OD‐Tz2) exhibits a more planar and rigid backbone, enhancing π–π chain stacking and intermolecular interactions. In addition, the electron‐deficient nature of Tz2 enhances the polymer electron affinity, thus reducing the polymer donor–acceptor character. When n‐doped with amines, P(NDI2OD‐Tz2) achieves electrical conductivity (≈0.1 S cm^?1) and a power factor (1.5 µW m^?1 K^?2) far greater than those of P(NDI2OD‐T2) (0.003 S cm^?1 and 0.012 µW m^?1 K^?2, respectively). These results demonstrate that planarized NDI‐based polymers with reduced donor–acceptor character can achieve substantial electrical conductivity and thermoelectric response.