High‐Brightness Blue Light‐Emitting Diodes Enabled by a Directly Grown Graphene Buffer Layer

Single‐crystalline GaN‐based light‐emitting diodes (LEDs) with high efficiency and long lifetime are the most promising solid‐state lighting source compared with conventional incandescent and fluorescent lamps. However, the lattice and thermal mismatch between GaN and sapphire substrate always induces high stress and high density of dislocations and thus degrades the performance of LEDs. Here, the growth of high‐quality GaN with low stress and a low density of dislocations on graphene (Gr) buffered sapphire substrate is reported for high‐brightness blue LEDs. Gr films are directly grown on sapphire substrate to avoid the tedious transfer process and GaN is grown by metal–organic chemical vapor deposition (MOCVD). The introduced Gr buffer layer greatly releases biaxial stress and reduces the density of dislocations in GaN film and In_xGa_1?xN/GaN multiple quantum well structures. The as‐fabricated LED devices therefore deliver much higher light output power compared to that on a bare sapphire substrate, which even outperforms the mature process derived counterpart. The GaN growth on Gr buffered sapphire only requires one‐step growth, which largely shortens the MOCVD growth time. This facile strategy may pave a new way for applications of Gr films and bring several disruptive technologies for epitaxial growth of GaN film and its applications in high‐brightness LEDs.     

Monolithic Flexible Vertical GaN Light‐Emitting Diodes for a Transparent Wireless Brain Optical Stimulator

Flexible inorganic‐based micro light‐emitting diodes (µLEDs) are emerging as a significant technology for flexible displays, which is an important area for bilateral visual communication in the upcoming Internet of Things era. Conventional flexible lateral µLEDs have been investigated by several researchers, but still have significant issues of power consumption, thermal stability, lifetime, and light‐extraction efficiency on plastics. Here, high‐performance flexible vertical GaN light‐emitting diodes (LEDs) are demonstrated by silver nanowire networks and monolithic fabrication. Transparent, ultrathin GaN LED arrays adhere to a human fingernail and stably glow without any mechanical deformation. Experimental studies provide outstanding characteristics of the flexible vertical μLEDs (f‐VLEDs) with high optical power (30 mW mm^?2), long lifetime (≈12 years), and good thermal/mechanical stability (100 000 bending/unbending cycles). The wireless light‐emitting system on the human skin is successfully realized by transferring the electrical power f‐VLED. Finally, the high‐density GaN f‐VLED arrays are inserted onto a living mouse cortex and operated without significant histological damage of brain.     

Recent Progress in GaN‐Based Light‐Emitting Diodes

In the last few years the GaN‐based white light‐emitting diode (LED) has been remarkable as a commercially available solid‐state light source. To increase the luminescence power, we studied GaN LED epitaxial materials. First, a special maskless V‐grooved c‐plane sapphire was fabricated, a GaN lateral epitaxial overgrowth method on this substrate was developed, and consequently GaN films are obtained with low dislocation densities and an increased light‐emitting efficiency (because of the enhanced reflection from the V‐grooved plane). Furthermore, anomalous tunneling‐assisted carrier transfer in an asymmetrically coupled InGaN/GaN quantum well structure was studied. A new quantum well structure using this effect is designed to enhance the luminescent efficiency of the LED to ～72%. Finally, a single‐chip phosphor‐free white LED is fabricated, a stable white light is emitted for currents from 20 to 60 mA, which makes the LED chip suitable for lighting applications.     

Improved Epitaxy of AlN Film for Deep‐Ultraviolet Light‐Emitting Diodes Enabled by Graphene

The growth of single‐crystal III‐nitride films with a low stress and dislocation density is crucial for the semiconductor industry. In particular, AlN‐derived deep‐ultraviolet light‐emitting diodes (DUV‐LEDs) have important applications in microelectronic technologies and environmental sciences but are still limited by large lattice and thermal mismatches between the epilayer and substrate. Here, the quasi‐van der Waals epitaxial (QvdWE) growth of high‐quality AlN films on graphene/sapphire substrates is reported and their application in high‐performance DUV‐LEDs is demonstrated. Guided by density functional theory calculations, it is found that pyrrolic nitrogen in graphene introduced by a plasma treatment greatly facilitates the AlN nucleation and enables fast growth of a mirror‐smooth single‐crystal film in a very short time of ≈0.5 h (≈50% decrease compared with the conventional process), thus leading to a largely reduced cost. Additionally, graphene effectively releases the biaxial stress (0.11 GPa) and reduces the dislocation density in the epilayer. The as‐fabricated DUV‐LED shows a low turn‐on voltage, good reliability, and high output power. This study may provide a revolutionary technology for the epitaxial growth of AlN films and provide opportunities for scalable applications of graphene films.     

Flexible Blade‐Coated Multicolor Polymer Light‐Emitting Diodes for Optoelectronic Sensors

A method to print two materials of different functionality during the same printing step is presented. In printed electronics, devices are built layer by layer and conventionally only one type of material is deposited in one pass. Here, the challenges involving printing of two emissive materials to form polymer light‐emitting diodes (PLEDs) that emit light of different wavelengths without any significant changes in the device characteristics are described. The surface‐energy‐patterning technique is utilized to print materials in regions of interest. This technique proves beneficial in reducing the amount of ink used during blade coating and improving the reproducibility of printed films. A variety of colors (green, red, and near‐infrared) are demonstrated and characterized. This is the first known attempt to print multiple materials by blade coating. These devices are further used in conjunction with a commercially available photodiode to perform blood oxygenation measurements on the wrist, where common accessories are worn. Prior to actual application, the threshold conditions for each color are discussed, in order to acquire a stable and reproducible photoplethysmogram (PPG) signal. Finally, based on the conditions, PPG and oxygenation measurements are successfully performed on the wrist with green and red PLEDs.     

Long‐Lived Flexible Displays Employing Efficient and Stable Inverted Organic Light‐Emitting Diodes

Although organic light‐emitting diodes (OLEDs) are promising for use in applications such as in flexible displays, reports of long‐lived flexible OLED‐based devices are limited due to the poor environmental stability of OLEDs. Flexible substrates such as plastic allow ambient oxygen and moisture to permeate into devices, which degrades the alkali metals used for the electron‐injection layer in conventional OLEDs (cOLEDs). Here, the fabrication of a long‐lived flexible display is reported using efficient and stable inverted OLEDs (iOLEDs), in which electrons can be effectively injected without the use of alkali metals. The flexible display employing iOLEDs can emit light for over 1 year with simplified encapsulation, whereas a flexible display employing cOLEDs exhibits almost no luminescence after only 21 d with the same encapsulation. These results demonstrate the great potential of iOLEDs to replace cOLEDs employing alkali metals for use in a wide variety of flexible organic optoelectronic devices.     

Perovskite Materials for Light‐Emitting Diodes and Lasers

Organic–inorganic hybrid perovskites have cemented their position as an exceptional class of optoelectronic materials thanks to record photovoltaic efficiencies of 22.1%, as well as promising demonstrations of light‐emitting diodes, lasers, and light‐emitting transistors. Perovskite materials with photoluminescence quantum yields close to 100% and perovskite light‐emitting diodes with external quantum efficiencies of 8% and current efficiencies of 43 cd A^?1 have been achieved. Although perovskite light‐emitting devices are yet to become industrially relevant, in merely two years these devices have achieved the brightness and efficiencies that organic light‐emitting diodes accomplished in two decades. Further advances will rely decisively on the multitude of compositional, structural variants that enable the formation of lower‐dimensionality layered and three‐dimensional perovskites, nanostructures, charge‐transport materials, and device processing with architectural innovations. Here, the rapid advancements in perovskite light‐emitting devices and lasers are reviewed. The key challenges in materials development, device fabrication, operational stability are addressed, and an outlook is presented that will address market viability of perovskite light‐emitting devices.     

Junction‐Free Electrospun Ag Fiber Electrodes for Flexible Organic Light‐Emitting Diodes

Fabrication of junction‐free Ag fiber electrodes for flexible organic light‐emitting diodes (OLEDs) is demonstrated. The junction‐free Ag fiber electrodes are fabricated by electrospun polymer fibers used as an etch mask and wet etching of Ag thin film. This process facilitates surface roughness control, which is important in transparent electrodes based on metal wires to prevent electrical instability of the OLEDs. The transmittance and resistance of Ag fiber electrodes can be independently adjusted by controlling spinning time and Ag deposition thickness. The Ag fiber electrode shows a transmittance of 91.8% (at 550 nm) at a sheet resistance of 22.3 Ω □^?1, leading to the highest OLED efficiency. In addition, Ag fiber electrodes exhibit excellent mechanical durability, as shown by measuring the change in resistance under repeatable mechanical bending and various bending radii. The OLEDs with Ag fiber electrodes on a flexible substrate are successfully fabricated, and the OLEDs show an enhancement of EQE (≈19%) compared to commercial indium tin oxide electrodes.     

Degradation Mechanisms in Small‐Molecule and Polymer Organic Light‐Emitting Diodes

Degradation in organic light‐emitting diodes (OLEDs) is a complex problem. Depending upon the materials and the device architectures used, the degradation mechanism can be very different. In this Progress Report, using examples in both small molecule and polymer OLEDs, the different degradation mechanisms in two types of devices are examined. Some of the extrinsic and intrinsic degradation mechanisms in OLEDs are reviewed, and recent work on degradation studies of both small‐molecule and polymer OLEDs is presented. For small‐molecule OLEDs, the operational degradation of exemplary fluorescent devices is dominated by chemical transformations in the vicinity of the recombination zone. The accumulation of degradation products results in coupled phenomena of luminance‐efficiency loss and operating‐voltage rise. For polymer OLEDs, it is shown how the charge‐transport and injection properties affect the device lifetime. Further, it is shown how the charge balance is controlled by interlayers at the anode contact, and their effects on the device lifetime are discussed.     

Semiconductor‐Nanocrystals‐Based White Light‐Emitting Diodes

In response to the demands for energy and the concerns of global warming and climate change, energy efficient and environmentally friendly solid‐state lighting, such as white light‐emitting diodes (WLEDs), is considered to be the most promising and suitable light source. Because of their small size, high efficiency, and long lifetime, WLEDs based on colloidal semiconductor nanocrystals (or quantum dots) are emerging as a completely new technology platform for the development of flat‐panel displays and solid‐state lighting, exhibiting the potential to replace the conventionally used incandescent and fluorescent lamps. This replacement can cut the ever‐increasing level of energy consumption, solve the problem of rapidly depleting fossil fuel reserves, and improve the quality of the global environment. In this review, the recent progress in semiconductor‐nanocrystals‐based WLEDs is highlighted, the different approaches for generating white light are compared, and the benefits and challenges of the solid‐state lighting technology are discussed.