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 为考察具有Cu7In3相结构的Cu In前驱膜对CuInS2薄膜微结构的影响,采用电沉积法制备了Cu In薄膜,并对制备态Cu In薄膜在380 ℃进行真空退火处理制备Cu7In3前驱膜。采用硫化法对制备态Cu In薄膜和Cu7In3薄膜进行硫化处理制备了CIS薄膜。结果表明,两种前驱膜经硫化处理均在表面生成CuxS偏析相,经KCN刻蚀处理发现以Cu7In3为前驱膜制备的CuInS2薄膜高质量结晶,具有(112)择优取向,适合于制备CIS薄膜太阳能电池吸收层。     

纳米Cu_2O/Ag/TiO_2三层复合薄膜的结构及性能

通过磁控溅射方法制备了一种新颖的纳米Cu2O/Ag/Ti O2三层复合薄膜。用X射线衍射(XRD)仪、扫描电子显微镜(SEM)、紫外可见分光光谱仪(Uv-vis)和荧光光谱仪(FLO)对薄膜的晶体结构、表面形貌、光学性能及Ag金属中间层的存在对复合薄膜的影响进行了分析。此外,对薄膜光催化性能的研究表明,插入Ag层的纳米Cu2O/Ag/Ti O2三层复合薄膜显示出远高于Cu2O/Ti O2双层复合薄膜的可见光催化活性。催化性能的提高归因于Ag金属中间层的存在,提高了三层复合薄膜的可见光吸收强度,增加了表面积,促进了激发电子的转移及光生电子和空穴的分离。     

硫分压对光吸收层CuInS2薄膜性能的影响

在不同硫分压r (r=Sn/[N2+Sn])下,采用Cu-In预制膜硫化法制备了CuInS2薄膜.用扫描电子显微镜、X射线衍射仪、霍尔测试仪、紫外-可见光分光光度计对薄膜的表面形貌、结构、电学、光学性能进行了表征分析.结果表明:随着r增加,薄膜的结晶质量提高,当r＝1/2时,晶粒大小如一,粒度保持在1 μm左右,沿[112]晶向择优生长,载流子浓度为5.6×1016 cm-3,光学带隙在1.53 eV左右.     

载气流量对CIS薄膜性能的影响

采用Cu-In预制层后硫化法制备CuInS2（CIS）薄膜。研究了硫源处载气流量对薄膜形貌、成分及结构等的影响。用扫描电镜（SEM）、能量色散谱仪（EDS）、X射线衍射仪（XRD）对薄膜形貌、成分、结构进行了表征,并用扩散生长模型加以解释。结果表明,具有CuIn和CuIn2混合相的Cu-In预制膜,在不同的载气流量下,硫化后所制备的薄膜均具有CIS/CuxIny/Cu结构。检测结果支持铜、铟离子穿过先期生成的CIS膜向外扩散,在表面处与硫反应生成CIS的生长模型。     

Cu靶功率和衬底温度对Cu-SiO_2纳米复合膜的相结构与光吸收性能影响

实验利用直流和射频磁控溅射方法交替沉积Cu-SiO2纳米复合膜,研究不同Cu靶功率和衬底温度对纳米复合膜的相结构和光吸收性能的影响。结果表明:随着Cu靶功率的增加,金属Cu纳米颗粒尺寸增大,导致光吸收峰峰位发生红移;随着衬底温度的升高,由于Cu再蒸发效应致使金属Cu纳米颗粒尺寸减小,引起光吸收峰峰位发生蓝移;与室温下沉积态Cu-SiO2纳米复合膜相比,在衬底加热条件下沉积的纳米复合膜在可见光波段出现了明显的表面等离子体共振吸收峰。因此,Cu靶功率和衬底温度对Cu-SiO2纳米复合薄膜的结晶状况和光吸收性能有显著影响。     

脉冲激光沉积及硒化法制备Cu(In,Ga)Se2薄膜研究

采用脉冲激光沉积和硒化后热处理的方法在石英衬底上制备Cu(In,Ga)Se2（简写为CIGS）薄膜,研究脉冲激光沉积（PLD）技术在制备CIGS薄膜太阳能电池材料上的应用,分析了不同预制层沉积顺序及厚度对CIGS薄膜组织结构、表面形貌、成分以及光学性能的影响。实验结果表明：(1)利用PLD技术及后硒化处理的工艺,制得的CIGS太阳能电池吸收层具有纯相和高结晶度等特性;(2)CuGa/In金属预制层的叠层顺序和叠层数、硒化退火温度对薄膜的结晶质量、晶粒尺寸、成分都具有重要的影响,其中叠层顺序影响最为明显;(3)样品均表现出对可见光区具有透射率低和吸收系数高的光学特性。本工作为制备性能优良的CIGS太阳能电池吸收层,提供了一个新颖的工艺手段。     

Influence of post-grown treatments on CuInS2 thin films prepared by sulphurization of Cu-In films

Polycrystalline CuInS2 (CIS) films were prepared by sulphurization of Cu-In films.The surface morphology and phase composition of the as-grown film,the KCN-etched film,and the annealed KCN-etched film were investigated.During the sulphurization,the secondary CuχS phase segregated on the surface of the as-grown films.To improve the crystalline quality of CulnS2 films,a series of post-grown treatments,such as KCN-etching and vacuum annealing KCN-etched films,were performed on the as-grown films.Both as-grown and post-treated films were characterized by X-ray diffraction (XRD),scanning electron microscopy (SEM),and energy dispersive spectroscopy (EDS).The results indicated that a CuχS secondary phase segregated on the surface of the as-grown film,which could be removed effectively by KCN etching.After the vacuum annealing treatment,the KCN-etched film had a sphalerite structure with (112) preferred orientation.Meanwhile,the crstalline quality of the CIS film was significantly improved,which provided a novel method to improve the performance of thin film solar cells.     

氧对CIS薄膜太阳能电池开路电压的影响

采用硫化Cu-In前驱膜的方法制备CuInS2薄膜,通过分析CIS薄膜制备过程中不同阶段样品中的氧,讨论了氧的来源及其存在形态,以及对CIS层开路电压可能造成的影响。用扫描电镜（SEM）和能量色散谱仪（EDS）研究前驱膜的形貌及其成分,用X射线衍射仪（XRD）表征薄膜的结构,用俄歇电子能谱（AES）对硫化薄膜中各元素沿深度方向的分布进行了检测,最后用I-V测试仪对硫化膜的开路电压进行测量。结果表明,CuInS2薄膜中的氧来源于Cu-In前驱膜,氧主要以Cu2In2O5的形式存在于CIS/Cu-In界面处,由于氧化物在硫化反应过程中影响了Cu和In向外表面的扩散,从而影响了CIS薄膜的成分和CIS太阳能电池的性能。     

Formation of CIGS thin absorption layer by sequential sputtering of CuGa/In/CuGa precursor on Mo/SLG with post selenization

Precursor structures of CuGa/In/CuGa stacking layers were prepared on Mo/soda-lime glass by sequential sputtering using intermetallic CuGa and metal In targets, with post selenization by Se evaporation at substrate temperature 500 °C. The selenized CIGS thin films were characterized by X-ray photo electron spectroscopy, X-ray diffraction, energy dispersive spectroscopy, Field emission scanning electron microscopy (FE-SEM), and Photoluminescence (PL). XPS survey spectra show that the constituent elements such as Cu, Ga, In, and Se appeared on the surface composition with corresponding photoelectron lines and a detailed study of the Se 3d signal in the CIGS absorption layer was discussed. The X-ray diffractograms of the CIGS films exhibited peaks revealing that the films are crystalline in nature with tetragonal chalcopyrite structure. FESEM images reveal that CIGS thin films yield granular nanostructure and a Mo back contact with a columnar structure. The CIGS thin films demonstrated intense near-band-edge PL and free-to-bound transitions were found and reported.     

磁控溅射制备Ni-Mn-Ga磁性形状记忆合金薄膜

本文采用直流磁控溅射的方法，分别在Si、Cu和NaCl基底上沉积了Ni-Mn-Ga薄膜，研究了不同基底、不同溅射条件和热处理对薄膜成分、组织形貌及结构的影响。结果表明，当溅射功率为22．5W，靶基距为40mm，溅射氮气压为0．1Pa时为最佳工艺参数。Si基片上薄膜比较致密均匀，Cu基片上薄膜则较为疏松，Naa基片上薄膜表面分布着团簇颗粒，但三种薄膜均可见明显的岛状结构，表明薄膜的形成为核生长型机制。热处理前的薄膜具有部分非晶存在。     

Formation of oxidation-resistant Cu-Mg coatings on (001) Cu for oxide superconducting tapes

The formation of oxidation-resistant buffer layers on (001) oriented Cu for coated high-temperature superconducting tape applications was investigated. The approach employed Cu/Mg multilayer precursor films that were subsequently annealed to form either Mg-doped fcc Cu or intermetallic Cu₂ Mg. The precursor consisted of an Mg/Cu multilayer stack with 5 each of 25 nm thick Mg and 25 nm thick Cu layers which were grown at room temperature by sputter deposition. At annealing temperature of 400 °C, formation of the intermetallic Cu₂ Mg was observed. X-ray diffraction showed that the Cu₂ Mg (100) oriented grains were epitaxial with respect to the underlying Cu film, possessing a cube-on-cube orientation. In order to test oxidation resistance, CeO₂ films were deposited at elevated temperature on Ni/(Cu,Mg)/Cu/MgO structures. In case of the CeO₂ film on Ni/Cu/MgO, significant surface roughness due to the metal oxidation is observed. In contrast, no surface roughness is observed in the SEM images for the CeO₂/Ni/(Cu,Mg)/Cu/MgO structure.     

Structural and optical properties of tellurium films obtained by chemical vapor deposition（CVD）

1 Introduction Te thin films have been extensively used in various technological areas, especially in microelectronic devices such as gas sensor [1?3], optical information storage [4] and other applications [5?7]. All these applications are due to remark…     

靶基距对Cu/Si(100)薄膜结构和残余应力的影响

采用高功率调制脉冲磁控溅射(MPPMS)技术在 Si(100)基体上沉积 Cu 薄膜,SEM 观察薄膜厚度及生长特征、XRD 分析薄膜晶体结构、nanoindentor 测量薄膜纳米硬度和弹性模量、Stoney 公式计算薄膜残余应力,研究沉积过程靶基距对 Cu / Si(100)薄膜沉积速率、微结构及残余应力的影响。 随着靶基距的增大,薄膜沉积速率降低,薄膜的生长结构由致密 T 区向 I 区转变,Cu(111)择优生长的晶粒逐渐减小,薄膜纳米硬度和弹性模量也相应降低,残余拉应力约为 400 MPa。 较小靶基距时增加的沉积离子通量和能量,决定了薄膜晶粒合并长大体积收缩过程的主要生长形式,导致了 Cu / Si(100)薄膜具有的残余拉应力状态。 MPPMS 工艺的高沉积通量和粒子能量可实现对 Cu / Si(100)薄膜残余应力的调控。     

In-situ thermal evolution of Ni/Ti multilayer thin films

Nickel and titanium alternated nanolayers were deposited from Ti and Ni targets. The multilayer thin films were designed in order to have equiatomic overall chemical composition with a period from 5 to 70 nm. The chemical composition, morphology, structure and phase transformation behaviour were studied. The surface and cross-section morphology of the as-deposited thin films was analysed by atomic force microscopy (AFM) and scanning electron microscopy (SEM). The Ni/Ti thin films present in their surface nanograins and for higher periods in cross section it was possible to distinguish the alternated layers and measure their thickness. The structural evolution with temperature was analysed by in-situ hot stage X-ray diffraction (XRD). The as-deposited multilayer thin films exhibit a tendency to a transitory disorder as the period decreases. For the smaller periods a disordered phase forms during the deposition process, while in Ni/Ti multilayers with higher periods this phase is only observed during annealing. By increasing the temperature an exothermic reaction occurs with the formation of the B2-NiTi austenitic phase. In spite of moderate enthalpy of mixing, the multilayers with intermediate modulation period of Ni/Ti films show potential to be used for joining purposes.     

Sputter-deposited Cu/Cu(O) multilayers exhibiting enhanced strength and tunable modulus

By means of brief pauses in radiofrequency (RF) sputter deposition between individual layers, ultrathin copper oxide layers were formed through adsorption in the Cu/Cu multilayers. Their mechanical properties were compared with the Cu/Cu(O) multilayers whose oxide layers were deliberately deposited between copper layers. The mechanical hardness value of the Cu/Cu(O) multilayers approached that of nanostructured copper thin films. The Young’s modulus of the multilayers was tunable, in accordance with the elasticity theories of composites. In addition, the Hall–Petch slope of the RF sputter-deposited Cu monolayers indicated that their theoretical strength approached the shear modulus of copper.     

预沉积ZnO薄膜对ZnO−MoS2/ZnO复合涂层结构与性能影响

目的 通过优化原子层沉积工艺获取不同厚度ZnO薄膜,研究ZnO薄膜晶体取向对ZnO?MoS2涂层生长结构的影响,获得具有优异摩擦学性能的ZnO?MoS2/ZnO复合涂层。方法 采用原子层沉积法在不锈钢基体上预沉积不同厚度的ZnO薄膜,再用射频磁控溅射技术继续沉积ZnO?MoS2涂层,制备ZnO?MoS2/ZnO固体润滑复合涂层。结果 X射线衍射分析发现,预沉积ZnO薄膜有诱导后续ZnO?MoS2涂层沉积生长的作用,预沉积100 nm厚ZnO薄膜的ZnO?MoS2/ZnO复合涂层显示出宽化的MoS2 (002)馒头峰,其截面形貌显示为致密的体型结构,获得的摩擦因数最低(0.08),纳米硬度最高(2.33 GPa),硬度/模量比显示该复合涂层的耐磨损性能得到提升;X射线光电子能谱分析结果表明,复合涂层表面游离S与空气中水发生反应程度大约为原子数分数5%,显示复合涂层耐湿性能较好;基于原子层沉积ZnO薄膜生长及其对后续ZnO?MoS2涂层生长的影响分析,提出了ZnO?MoS2/ZnO复合涂层磨损模型,阐明了ZnO薄膜对复合涂层结构及摩擦学性能的影响,并以该模型解释了200 nm厚 ZnO薄膜上沉积ZnO?MoS2涂层出现的摩擦因数由高到低的变化趋势及最终磨损失效现象。结论 合适的原子层沉积制备的ZnO薄膜有利于MoS2 (002)取向生长,可有效提升ZnO?MoS2/ZnO复合涂层的摩擦学性能;控制ZnO薄膜厚度,可实现ZnO薄膜与基底及ZnO?MoS2层间界面之间的优化结合,以制得具有较好摩擦学性能及使用寿命的ZnO?MoS2/ZnO复合涂层。     

电沉积制备CIS太阳能电池吸收层材料

在Cu衬底上用电沉积的方法沉积金属In,再通过硒蒸气硒化处理成功制备了CuInSe2薄膜。用X射线衍射（XRD）、扫描电镜（SEM）、X射线能谱（EDS）对制备的薄膜进行相组成、微观结构、表面形貌等分析,研究了制备工艺条件对薄膜性能的影响。结果表明：电沉积的In在低温热处理阶段与衬底Cu扩散形成Cu—In合金预制层,预制层在硒化阶段生成CulnSe2,合金中过量Cu生成CuSe表面层,未反应的In转变为Cu36In9,形成Cu衬底／Cu16In9／CuInSe2／CuSe结构。     

Optical and Photocatalytic Properties of Cu-Cu2O/TiO2 Two-Layer Nanocomposite Films on Si Substrates

通过磁控溅射法在TiO2薄膜上生长Cu-Cu2O复合层,从而制备新型Cu-Cu2O/TiO2双层纳米复合薄膜。并采用X射线衍射（XRD）,扫描电子显微镜（SEM）,荧光光谱（PL）,X射线光电子能谱（XPS）和紫外可见漫反射光谱（DRS）等方法对膜的结构,形态和光学性能进行了研究。X射线衍射谱表明,Cu-Cu2O混合物层和Cu2O层都没有影响TiO2的结晶相。XPS结果表明,Cu的存在抑制了Cu2O表面在空气中的氧化。SEM分析表明,结晶良好的Cu-Cu2O混合物微小纳米颗粒均匀分散于TiO2表面。由于紫外可见漫反射光谱的Cu-Cu2O/TiO2复合薄膜的吸收边发生红移。PL光谱证实了在Cu的存在下,激发电子和空穴的复合率降低。光催化实验表明,与纯Cu2O/TiO2相比,所制备的Cu-Cu2O/TiO2-8显示出更高的光生载流子效率,其光催化性能也显著提高。此外,还对Cu-Cu2O/TiO2-8光催化活性增强的原因进行了讨论     

Preparation and characterization of ZnO/Cu/ZnO transparent conductive films

ZnO/Cu/ZnO transparent conductive thin films were prepared by RF sputtering deposition of ZnO target and DC sputtering deposition of Cu target on n-type (001) Si and glass substrates at room temperature. The morphology, structure, optical, and electrical properties of the multilayer films were characterized by field emission scanning electron microscope (FESEM), X-ray diffraction (XRD), UV/Vis spectrophotometer, and Hall effect measurement system. The influence of Cu layer thickness and the oxygen pressure in sputtering atmosphere on the film properties were studied. ZnO/Cu/ZnO transparent conductive film fabricated in pure Ar atmosphere with 10 nm Cu layer thickness has the best performance: resistivity of 2.3×10-4 Ω·cm, carrier concentration of 6.44×1016cm-2 , mobility of 4.51cm2·(V·s)-1 , and acceptable average transmittance of 80 % in the visible range. The transmittance and conductivity of the films fabricated with oxygen are lower than those of the films fabricated without oxygen, which indicates that oxygen atmosphere does not improve the optical and electrical properties of ZnO/Cu/ ZnO films.     

Effect of Deposition Potential on Synthesis,Structural,Morphological and Photoconductivity Response of Cu_2O Thin Films by Electrodeposition Technique

The present work describes the effect of deposition potentials on structural, morphological, optical, electrical and photoconductivity responses of cuprous oxide(Cu_2O) thin films deposited on fluorine-doped tin oxide glass substrate by employing electrodeposition technique. X-ray diffraction patterns reveal that the deposited films have a cubic structure grown along the preferential(111) growth orientation and crystallinity of the film deposited at. 0.4 V is improved compared to the films deposited at. 0.2,. 0.3 and. 0.5 V. Scanning electron microscopy displays that surface morphology of Cu_2O film has a well-defined three-sided pyramid-shaped grains which are uniformly distributed over the surface of the substrates and are significantly changed as a function of deposition potential. Raman and photoluminescence spectra manifest that the film deposited at. 0.4 V has a good crystal quality with higher acceptor concentration compared to other films. UV–visible analysis illustrates that the absorption of Cu_2O thin film deposited at. 0.4 V is notably higher compared to other films and the band gap of Cu_2O thin films decreases from 2.1 to 2.04 eV with an increase in deposition potential from. 0.2 to. 0.5 V.The frequency–temperature dependence of impedance analysis shows that the film deposited at. 0.4 V has a high conductivity.I – V measurements elucidate that the film deposited at. 0.4 V exhibits a good photoconductivity response compared to films deposited in other deposition potentials.