Spark Plasma Sintering of Nano-Sized TiN Prepared from TiO2 by Controlled Hydrolysis of TiCl4 and Ti(O-i-C3H7)4 Solution

Nano-sized TiO₂ powders were prepared by controlled hydrolysis of TiCl₄ and Ti(O-i-C₃H₇)₄ solutions and nitrided in flowing NH₃ gas at 700°–1000°C to form TiN. Nano-sized TiN was densified by spark plasma sintering at 1300°–1600°C to produce TiN ceramics with a relative density of 98% at 1600°C. The microstructure of the etched ceramic surface was observed by SEM, which revealed the formation of uniformly sized 1–2 μm grains in the TiCl₄-derived product and 10–20 μm in the Ti(O-i-C₃H₇)₄-derived TiN. The electric resisitivity and Vickers micro-hardness of the TiN ceramics was also measured.     

Effect of Sintering Additive Composition on the Processing and Thermal Conductivity of Sintered Reaction-Bonded Si3N4

Two compositions of the Y₂O₃–MgO (YM) and Yb₂O₃–MgO (YbM) systems were chosen to study the effect of the sintering additive composition on the processing and thermal conductivity of sintered reaction-bonded silicon nitride (SRBSN). The nitridation, postdensification, microstructural evolution, and thermal conductivity of SRBSN were found to depend strongly on the sintering additive composition. The RBSN materials with YbM exhibited a poor sinterability, whereas those with YM exhibited an excellent sinterability. However, the SRBSN materials with YbM showed a higher thermal conductivity than those with YM. This was associated primarily with the isolated distribution and lower amount of secondary phase and the higher percentage of large grains in the former materials.     

Microstructure and Mechanical Properties of Sinter–Post-HIPed Si3N4–SiC Composites

The microstructural evolution and mechanical properties of Si₃N₄–SiC composites obtained by the sinter–post-HIP process were investigated. SiC addition prohibited β-Si₃N₄ grain growth; however, the grain growth followed the empirical growth law, with exponents of 3 and 5 for the c - and the a -axis directions, respectively. Mechanical properties were strongly influenced by SiC addition and sintering conditions. Short-crack propagation behavior was measured and analyzed by the indentation-strength in-bending (ISB) method. The present composites had high short-crack toughness, compared with the values for monolithic Si₃N₄. The enhanced short-crack toughness was attributed to crack-tip bridging by the SiC particles.     

Gas Pressure Sintering of Silicon Nitride Powder Coated with Al2O3 and TiO2

Gas pressure sintering kinetics of silicon nitride powder coated with 10 wt% (9:1) Al₂O₃ and TiO₂ have been studied at 1850°C with a pressure schedule of 0.3 MPa in the first stage and 1 MPa in the second stage. The rates have been analyzed with a liquid-phase sintering model. Diffusion-controlled intermediate-stage kinetics have been observed. The role of second-step pressurization with nitrogen and argon has been determined by monitoring the kinetics. Pressurization at an earlier stage (∼90% relative density) reduces the densification rate but produces a denser material at the final stage. Although final density is greater, a porous surface layer forms on samples sintered with argon pressurization at the second stage. No such porous layer is formed in the case of pressurization with nitrogen. The mechanism of the intermediate-stage kinetics has been discussed with respect to the nature of the product analyzed by XRD after sintering.     

Fabrication of Textured Si3N4 Ceramics by Slip Casting in a High Magnetic Field

Developing the texture of ceramics is one of the effective ways for improving properties. Although the magnetic susceptibility of nonmagnetic materials is very small, there is a possibility to control the crystal orientation using a high magnetic field due to a magnetic anisotropy. In this study, Si₃N₄ ceramics were manufactured by a slip-casting process under high magnetic field and pressureless sintering. The texture of Si₃N₄ ceramics was studied using X-ray diffraction and scanning electron micrographs of polished and plasma-etched specimens. It has been found that most of the a,b -axes texture of β-Si₃N₄ grains aligned to the magnetic field direction.     

Influence of Cu2O on Interface Behavior of Copper/SiCp Composite Prepared by Spark Plasma Sintering

Copper/SiC_p composites were prepared by spark plasma sintering. X-ray photoelectron spectroscopy, X-ray diffraction, transmission electron microscopy, and energy dispersive spectroscopy techniques were used to characterize the sintered samples. Cu₂O was found to facilitate the physical wetting at the interface through the formation of an amorphous intergranular phase. The reaction between SiC and copper was detected in the samples containing little Cu₂O. It led to the degradation of SiC reinforcements and the decrease in hardness of copper/SiC_p composites.     

Fabrication and Microstructure Characterization of Ti3SiC2 Synthesized from Ti/Si/2TiC Powders Using the Pulse Discharge Sintering (PDS) Technique

Ti/Si/2TiC powders were prepared using a mixture method (M) and a mechanical alloying (MA) method to fabricate Ti₃SiC₂ at 1200°–1400°C using a pulse discharge sintering (PDS) technique. The results showed that the Ti₃SiC₂ samples with <5 wt% TiC could be rapidly synthesized from the M powders; however, the TiC content was always >18 wt% in the MA samples. Further sintering of the M powder showed that the purity of Ti₃SiC₂ could be improved to >97 wt% at 1250°–1300°C, which is ∼200°–300°C lower than that of sintered Ti/Si/C and Ti/SiC/C powders using the hot isostatic pressing (HIPing) technique. The microstructure of Ti₃SiC₂ also could be controlled using three types of powders, i.e., fine, coarse, or duplex-grained, within the sintering temperature range. In comparison with Ti/Si/C and Ti/SiC/C mixture powders, it has been suggested that high-purity Ti₃SiC₂ could be rapidly synthesized by sintering the Ti/Si/TiC powder mixture at relatively lower temperature using the PDS technique.     

Stepwise-Graded Si3N4–SiC Ceramics with Improved Wear Properties

The processing of stepwise graded Si₃N₄/SiC ceramics by pressureless co-sintering is described. Here, SiC (high elastic modulus, high thermal expansion coefficient) forms the substrate and Si₃N₄ (low elastic modulus, low thermal expansion coefficient) forms the top contact surface, with a stepwise gradient in composition existing between the two over a depth of ∼1.7 mm. The resulting Si₃N₄ contact surface is fine-grained and dense, and it contains only 2 vol% yttrium aluminum garnet (YAG) additive. This graded ceramic shows resistance to cone-crack formation under Hertzian indentation, which is attributed to a combined effect of the elastic-modulus gradient and the compressive thermal-expansion-mismatch residual stress present at the contact surface. The presence of the residual stress is corroborated and quantified using Vickers indentation tests. The graded ceramic also possesses wear properties that are significantly improved compared with dense, monolithic Si₃N₄ containing 2 vol% YAG additive. The improved wear resistance is attributed solely to the large compressive stress present at the contact surface. A modification of the simple wear model by Lawn and co-workers is used to rationalize the wear results. Results from this work clearly show that the introduction of surface compressive residual stresses can significantly improve the wear resistance of polycrystalline ceramics, which may have important implications for the design of contact-damage-resistant ceramics.     

Effective Doping in Cubic Si3N4 and Ge3N4: A First-Principles Study

First-principles calculations have been conducted to investigate impurities in cubic Si₃N₄ and Ge₃N₄. Impurity species suitable for n - and p -type doping are suggested, in terms of the formation and ionization energies. The suggested species are P and O as n -type dopants and Al as a p -type dopant for c -Si₃N₄, and Sb and O as n -type dopants and Al as a p -type dopant for c -Ge₃N₄. The dependence of the formation energies on the chemical potentials indicates that a proper choice of growth conditions is mandatory for suppressing the incorporation of these impurities into anti and interstitial sites, where the impurities can be charged to compensate carriers.     

Solubility of Si3N4 in Liquid SiO2

The nitrogen solubility in the SiO₂-rich liquid in the metastable binary SiO₂-Si₃N₄ system has been determined by analytical TEM to be 1%–4% of N/(O + N) at 1973–2223 K. Analysis of the near edge structure of the electron energy loss peak indicates that nitrogen is incorporated into the silicate network rather than being present as molecular N₂. A regular solution model with a positive enthalpy of mixing for the liquid was used to match the data for the metastable solubility of N in the presence of crystalline Si₃N₄ and to adjust the computed phase diagram. The solubility of Si₃N₄ in fused SiO₂ is far less than reported in liquid silicates also containing Al, Mg, and/or Y. Apparently, these cations act as modifiers that break anion bridges in the silicate network and, thereby, allow further incorporation of Si₃N₄ without prohibitive amounts of network cross-linking. Finally, indications emerged regarding the diffuse nature of the Si₃N₄-SiO₂ interface that leads to amorphous regions of higher N content.     

Slip Casting of SiC-Whisker-Reinforced Si3N4

Si₃N₄ composite materials containing up to 20 vol% SiC whiskers were slip cast and pressureless sintered at 1820°C and 0.13 MPa of N₂. Viscosimetry showed no influence of whisker loading on the rheology of the highly concentrated aqueous slips up to 15 vol% whiskers. During casting the whiskers were preferentially aligned parallel to the mold surfaces. Depending on the whisker loading, green densities of 0.64 to 0.69 fractional density could be achieved. Strong anisotropic shrinkage occurred during sintering with a maximum linear shrinkage of 21% perpendicular but only 7% parallel to the whisker plane. With increasing whisker content from 0 to 20 vol% sintered densities decreased from 0.98 to 0.88, respectively.     

Microstructure and Densification of Pressureless-Sintered Al2O3/Si3N4-Whisker Composites

Composite densification was studied by performing slip casting and sintering experiments on an Al₂O₃ matrix and Si₃N₄ whisker system. Even though all the slip-cast powder compacts exhibited high green densities (up to 70% of the theoretical) and narrow pore-size distribution (pore radius around 15 to 30 nm), significant differential densification on a microscopic scale was found due to the existence of local whisker agglomeration. The inhomogeneous whisker distribution resulted in a binary mixture of large and small pores in the sintered composites, in which whisker-associated flaws remained stable even after prolonged sintering. The sintered microstructures showed that the spatial distribution as well as the volume fraction of the Si₃N₄ affect composite densification. Inhomogeneous whisker distribution dominated the complete densification of the composites.     

Densification of Si3N4 with LiYO2 Additive

This paper deals with the densification and phase transformation during pressureless sintering of Si₃N₄ with LiYO₂ as the sintering additive. The dilatometric shrinkage data show that the first Li₂O- rich liquid forms as low as 1250°C, resulting in a significant reduction of sintering temperature. On sintering at 1500°C the bulk density increases to more than 90% of the theoretical density with only minor phase transformation from α-Si₃N₄ to β-Si₃N₄ taking place. At 1600°C the secondary phase has been completely converted into a glassy phase and total conversion of α-Si₃N₄ to β-Si₃N₄ takes place. The grain growth is anisotropic, leading to a microstructure which has potential for enhanced fracture toughness. Li₂O evaporates during sintering. Thus, the liquid phase is transient and the final material might have promising mechanical properties as well as promising high-temperature properties despite the low sintering temperature. The results show that the Li₂O−Y₂O₃ system can provide very effective low-temperature sintering additives for silicon nitride.     

Si3N4/SiC-Whisker Composites without Sintering Aids: III, High-Temperature Behavior

The fracture behavior at high temperature of a Si₃N₄-based SiC-whisker composite fabricated by hot isostatic pressing without sintering aids is compared with that of other highly refractory materials. Particular attention is directed toward evaluating the slow-crack-growth resistance of the composite up to 1440°C and relating this resistance to the microfracture behavior of Si₃N₄ grains, SiC whiskers, and the intergranular, glassy SiO₂ phase. Only thick whiskers operate to bridge the wake of the crack; these whiskers may make a positive contribution to the slow-crack-growth resistance. Impurities detected by EDX microanalysis at the grain boundary, however, apparently degrade the high-temperature properties, a finding supported by internal-friction measurements. Nevertheless, the high potential of the system without sintering aids for high-temperature structural applications has been demonstrated by the time to failure estimated from the measured slow-crack-growth resistance for a fixed flaw size.     

Si3N4/SiC-Whisker Composites without Sintering Aids: II, Fracture Behavior

The fracture behavior of an Si₃N₄/SiC-whisker composite fabricated without sintering aids is investigated using a double approach based on the examination of R -curve behavior and a statistical analysis of crack propagation. In the composite with 20 vol% whisker, a 30% increase in toughness over the matrix value can be attributed to crack-tip phenomena. Strong interfacial bonding prevents any contribution to toughening by mechanisms operating in the wake region of the crack. Based on experimental observations of microfracture in both SiC whiskers and Si₃N₄ grains, toughening caused by crack-tip phenomena is quantitatively discussed in terms of fracture energy and whisker-distribution parameters.     

Development of WC–ZrO2 Nanocomposites by Spark Plasma Sintering

In the present work, we report the processing of ultrahard tungsten carbide (WC) nanocomposites with 6 wt% zirconia additions. The densification is conducted by the spark plasma sintering (SPS) technique in a vacuum. Fully dense materials are obtained after SPS at 1300°C for 5 min. The sinterability and mechanical properties of the WC–6 wt% ZrO₂ materials are compared with the conventional WC–6 wt% Co materials. Because of the high heating rate, lower sintering temperature, and short holding time involved in SPS, extremely fine zirconia particles (∼100 nm) and submicrometer WC grains are retained in the WC–ZrO₂ nanostructured composites. Independent of the processing route (SPS or pressureless sintering in a vacuum), superior hardness (21–24 GPa) is obtained with the newly developed WC–ZrO₂ materials compared with that of the WC–Co materials (15–17 GPa). This extremely high hardness of the novel WC–ZrO₂ composites is expected to lead to significantly higher abrasive-wear resistance.     

Crack-Healing Behavior of Si3N4/SiC Ceramics under Cyclic Stress and Resultant Fatigue Strength at the Healing Temperature

Si₃N₄/SiC composite ceramics were sintered and subjected to three-point bending. A semi-elliptical surface crack of 100 μm surface length was made on each specimen. The crack-healing behavior under cyclic stress of 5 Hz, and resultant cyclic fatigue strengths at healing temperatures of 1100° and 1200°C, were systematically investigated. The main conclusions are as follows: (1) Si₃N₄/SiC composite ceramics have an excellent ability to heal a crack at 1100° and 1200°C. (2) This sample could heal a crack even under cyclic stress at a frequency of 5 Hz. (3) The crack-healed sample exhibited quite high cyclic fatigue strength at each crack-healing temperature, 1100° and 1200°C.     

B6O–c-BN Composites Prepared by High-Pressure Sintering

High-pressure sintering behavior in the B₆O– c -BN system was investigated using in-laboratory-synthesized B₆O and commercially available c -BN powders (with an average grain size of 0.5, 3, or 6 μm). No reaction occurred between the two components under the high-pressure (4–6 GPa) and high-temperature (1500°–1800°C) conditions that have been investigated. Well-dispersed, sintered B₆O– x ( c -BN) composites (where x = 0–60 vol%) of almost-full density were prepared by sintering at a pressure of 6 GPa and temperature of 1800°C for 20 min. The maximum Vickers microhardness (46 GPa) of these composites was attained by adding 40 vol% c -BN with an average grain size of 0.5 μm. The fracture toughness of these composites increased as the c -BN content increased; the maximum fracture toughness (1.5–1.8 MPa^.m^1/2) was observed for x = 40–60 vol%. Crack deflection along the B₆O– c -BN grain boundary contributed to increasing the fracture toughness.     

Calculation of XANES/ELNES Spectra of All Edges in Si3N4 and Si2N2O

Using a recently developed first-principles supercell method that includes the electron and core-hole interaction, the XANES/ELNES spectra of Si- L _2,3, Si- K , and N- K edges in α-Si₃N₄, β-Si₃N₄, spinel c -Si₃N₄, and Si₂N₂O were calculated and compared. The difference in total energies between the initial ground state and the final core-hole state provides the transition energy. The calculated spectra are found to be in good agreement with the experimental measurements on β-Si₃N₄ and c -Si₃N₄. The differences in the XANES/ELNES spectra for the same element in different crystals are explained in terms of differences in local bonding. The use of orbital-decomposed local density of states to explain the measured spectra is shown to be inadequate. These results reaffirm the importance of including the core-hole effect in any XANES/ELNES spectral calculation.     

Additive Effects on Si3N4 Oxidation/Volatilization in Water Vapor

Two commercially available additive-containing silicon nitride materials were exposed in four environments which ranged in severity from dry oxygen at 1 atm pressure, and low gas velocity, to an actual turbine engine. Oxidation and volatilization kinetics were monitored at temperatures ranging from 1066° to 1400°C. The main purpose of this paper is to examine the surface oxide morphology resulting from the exposures. It was found that the material surface was enriched in rare-earth silicate phases in combustion environments when compared with the oxides formed on materials exposed in dry oxygen. However, the in situ formation of rare-earth disilicate phases offered little additional protection from the volatilization of silica observed in combustion environments. It was concluded that externally applied environmental barrier coatings are needed to protect additive-containing silicon nitride materials from volatilization reactions in combustion environments.