DC machine models for SPICE2 simulation

A four-level computer model is proposed for DC machine simulation using SPICE2 to meet different simulation requirements. The most complex model takes account of magnetic saturation, armature reaction, current dependence of winding circuit parameters, and eddy current effects. The models have been developed to enable designers to simulate the static and dynamic characteristics of a complete converter drive system including the DC machine more simply, practically, and reliably in one simulation run. Some simulations have been investigated to demonstrate the benefits of the SPICE2 machine models     

一种用于功率IC的新型SPICE宏模型

基于规范化分段线性模型技术,建立了高压DMOS器件的SPICE宏模型用于功率集成电路的仿真.从等效电路模型出发,利用Powell算法找到规范化分段线性模型的最佳系数,从而利用节点电压可以直接描述DMOS器件的各种非线性特性.该模型不仅准确性高,而且仿真速度快、收敛性好.最后,给出了仿真与测试的对比结果,证明了模型的有效性和准确性.     

一种用于功率IC的新型SPICE宏模型

基于规范化分段线性模型技术,建立了高压DMOS器件的SPICE宏模型用于功率集成电路的仿真.从等效电路模型出发,利用Powell算法找到规范化分段线性模型的最佳系数,从而利用节点电压可以直接描述DMOS器件的各种非线性特性.该模型不仅准确性高,而且仿真速度快、收敛性好.最后,给出了仿真与测试的对比结果,证明了模型的有效性和准确性.     

一种新颖的功率MOSFET SPICE宏模型

提出了一种新颖的功率MOSFET宏模型结构,详细介绍了宏模型建立的整个流程;并将此模型的仿真结果与实验数据进行比较,验证了模型的精度。此模型考虑了功率MOSFET必要的二阶效应,并采用行为级模型来处理JFET电阻。     

Circuit models for three-dimensional geometries includingdielectrics

The partial element equivalent circuit (PEEC) approach has proved useful for modeling many different electromagnetic problems. The technique can be viewed as an approach for the electrical circuit modeling for arbitrary 3-D geometries. Recently, the authors extended the method to include retardation with the rPEEC models. So far the dielectrics have been taken into account only in an approximate way. In this work, they generalize the technique to include arbitrary homogeneous dielectric regions. The new circuit models are applied in the frequency as well as the time domain. The time solution allows the modeling of VLSI systems which involve interconnects as well as nonlinear transistor circuits     

Simulation and Modeling-implementing GaAs device models with SPICE

A method for evaluating the accuracy of a device model and its tendency toward convergence problems before implementing it as a SPICE primitive is presented. Two different GaAs MESFET models suitable for analyzing nonlinear analog and microwave circuits are implemented using generic SPICE primitives. It is shown that no modification to the SPICE program is required. Controlled sources are extensively used in implementing the models using this method     

Non-linear average electrothermal models of buck and boost converters for SPICE

The new method of formulating non-linear average electrothermal models of dc-dc converters is presented in the paper. These models take into account both: non-linearity of diode and transistor characteristics and electrical inertia of these elements. The form of the models for buck and boost converters is presented and their correctness is verified by comparing the characteristics of the considered converters obtained with the proposed model and the classic transient analysis.     

Propagation models for short-range wireless channels with predictable path geometries

We consider wireless data services characterized by short distances, no shadowing, low power, and low antenna heights, deployed in places where a high frequency of potential users is expected, e.g., toll booths, parking lots, intersections, etc. Within such a system, we expect to see a well-defined geometry of base-to-user radio paths, as well as a predictable user trajectory, neither of which can be assumed for the wide-area cellular case. This offers the promise of a strong deterministic component of the channel response, in addition to a weaker stochastic component. Here, we combine analysis of the former with measurements and modeling of the latter for three typical outdoor scenarios. Comparisons between predicted and measured behavior show excellent agreement.     

On the implementation of general four-terminal DC device models in SPICE

The circuit-simulator program SPICE has been used worldwide by industry and academia to simulate wide varieties of IC designs. With the advance of technology have come many new devices that cannot be simulated by SPICE in its current form. We present methods for implementing classes of new DC device models directly into the source code of SPICE. The techniques described are illustrated for the case of the El-Mansy MOSFET model.     

用于天文观测的先进红外焦平面技术

红外谱段的天文观测,对知悉太阳构成、探索隐藏宇宙、获取丰富的谱特征以及追溯宇宙早期生命等天文问题的研究具有非常重要的意义［1］。但对于覆盖1 μm~x mm非常宽泛谱段的探测,需要运用不同类型的红外探测阵列技术。目前,满足1 μm至毫米波段探测要求的多种红外探测阵列的制作技术均已臻于成熟,包括：响应谱段1~5 μm的混合式结构的InSb和HgCdTe光伏阵列;响应谱段为5~28 μm的Si∶As杂质能带电导器件;响应远红外谱段的光导器件;响应亚毫米波及毫米波段的测辐射热计或者超导器件。20世纪80年代,人类第一次将红外焦平面阵列应用于天文探测以来,红外谱段的天文探测能力平均每7个月就增强1倍。本文通过阐述了国际上用于天文观测探测器阵列技术,探讨了其中的基本原则。希望能够提供更多的信息供研究人员参考。     

Negative inductors and capacitors for SPICE simulation

It is explained that to simulate circuits containing negative inductances and capacitances using general-purpose simulators like SPICE, the networks under consideration must be transformed into suitable SPICE-compatible circuits. Criteria that the portion of the network containing the negative elements should meet are given. The SPICE network realizing these elements, when L and C are independent of frequency and time, is shown. An example of a Brune network is given     

Accurate power supply and ground plane pair models [for MCMs]

In this paper, we derive a theory and method for the use of two-dimensional (2-D) discrete transmission lines (TL's) or discrete coupled transmission lines (CTL's) in modeling power supply and ground planes accurately. If the stray coupling between power or local ground and global ground is not significant, the discrete TL's model is used. Otherwise the discrete CTL's model is used. An arbitrarily shaped plane pair is discretized into a 2-D TL or CTL array by an automatic mesh algorithm. The equivalent distributed circuit, including skin loss effect at high frequencies, represents this power ground plane pair. The theory is extended to be applicable to a generic multiple dielectric layer structure. The model computation results are in excellent agreement with S parameter measurements for practical frequency ranges, including the first major resonant nulls and peaks. The null or peak of the S parameter frequency response represents the test port interaction with the resonant standing wave of these planes at that frequency. The resultant S parameter data of these models can be condensed into a simpler N port equivalent circuit to represent a larger hierarchical power and ground plane network for fast simulation     

A versatile SPICE model for quantum-well lasers

A SPICE equivalent-circuit model for the design and analysis of quantum-well lasers is described. The model is based on the three-level rate equations which include, in their characterization of charge dynamics, the role of gateway states at the quantum well. The model is versatile in that it permits both small- and large-signal simulations to be performed. Emphasis here is placed on validating the model via a comparison of simulated results with measured data of the small-signal modulation response, obtained over a wide range of optical output powers from two lasers with different lengths of the separate-confinement heterostructure (SCH). Using a set of tightly specified model parameters, all the important trends in the experimental data are reproduced. The consideration of gateway states is found to be important, with regard to predicting the small-signal response, only for the laser with the longer SCH. This highlights the significance of the interplay between the roles of transport through the SCH and capture/release via the gateway states at the quantum well     

异质结双极型晶体管SPICE模型及其参数提取

将异质结双极型晶体管(HBT)模型分为本征模型和外模型,并综合考虑了异质结双极型晶体管的寄生效应、空间电荷区的复合效应、隧道效应、热效应和重搀杂效应等因数,应用VC 语言编制提取HBT模型参数软件包,根据HBT的物理参数模拟了HBT的Ⅰ-Ⅴ特性、差分电路的稳态特性和瞬态特性,并与实验结果相对比,验证了HBT模型的正确性.     

DC SPICE model for nanocrystalline and microcrystalline silicon TFTs

In this paper, we present a physically-based analytical model for n-channel nanocrystalline and microcrystalline thin-film transistors suitable for implementation in circuit simulators such as SPICE. The model is based on existing models for amorphous silicon thin film transistors, which have been extended to account for observed physical phenomena in nanocrystalline and microcrystalline thin film transistors. The proposed model has been verified for the most important regions of operation of the devices and has shown good agreement with experimental data.     

SPICE model and parameters for fully-depleted SOI MOSFET'sincluding self-heating

A simple methodology to accurately extract constant temperature model parameters from static measurements of fully-depleted SOI MOSFET current-voltage characteristics is demonstrated. Self-heating is included in an existing physically-based, short-channel bulk MOSFET model, PCIM, by allowing the temperature to change linearly with power dissipation at each bias point. Only a simple modification of the channel bulk charge in PCIM is necessary to adapt it for SOI. The temperature dependence of the physical parameters (mobility, flatband voltage, and saturation velocity) are also fitted and included in the model. Excellent fit to experimental fully-depleted SOI data is shown over a large range of bias conditions and channel lengths. Once the static SOI data is fitted, the constant temperature model parameters appropriate for circuit simulation are easily extracted     

Simple performance models for integrated processing tools

Integrated processing tools are becoming increasingly prevalent in modern fabs. Integrated tools consist of several process modules connected around a central handler such that the modules can process several wafers from the same lot simultaneously. Lithography cells and vacuum cluster tools are examples of integrated processors. Simple, intuitive models of the cycle time, throughput, and wafer cost of integrated tools are introduced. The models use two measurable parameters that aggregate tool operations: the incremental cycle time is the average increase in cycle time resulting from a lot size increment of one wafer and the fixed cycle time is the portion of cycle time that is independent of lot size. One example shows how an empirical analysis of a commercial CVD cluster tool was used with the models to identify opportunities to increase tool throughput. In a second example, analytical models of the incremental and fixed cycle times are used to provide insight into the effects of tool configuration on performance. Finally, simulations of single integrated tools are used to show some limitations of the model     

ESD SPICE model and measurements for a hard disk drive

A simple lumped RLC model for a hard disk drive is developed and used in SPICE circuit simulations. Simulation results were compared with experimental measurements using a special “hybrid” disk drive to validate the SPICE model. The voltage on and between the head and disk inside the drive were modeled during an ESD event to the baseplate and/or disk. Experimental measurements and SPICE modeling show that if the disk grounded when there is a large disk-to-base resistance, then head-to-disk electrical breakdown can occur. It is concluded that an electrical model is valuable in developing an understanding of the effects of ESD on a hard disk drive.     

Comparison of simple models of cylindrical and plane field-effect transistors

The electrical properties of plane field-effect transistors with different assumed impurity-atom distributions in their channel regions, corresponding to either an alloyed- or a diffused-gate p-n junction, are compared with those of the cylindrical type, with a uniform distribution of impurities in the channel. It is shown that the electrical properties of different types of field-effect transistors with the same pinchoff voltage and transconductance are quite similar.