任意分布分组长度PAD的性能分析及计算机模拟

阐述在非分组型终端上加装分组装拆设备ＰＡＤ进入分组交换网的意义，介绍ＰＡＤ的功能及相关协议，分析ＰＡＤ排队模型和讨论了ＰＡＤ排队系统的计算机模拟。     

亚太地区蜂窝区移动电话用户数一览表

采用协议业务开始时间蜂窝区网络数量用户数普及率(%)香港(中国)ＴＡＣＳ,ＧＳＭ,ＣＤＭＡ,ＡＭＰＳ1984　　　　72086000　　33.8澳大利亚ＡＭＰＳ,ＧＳＭ19934497500027.5新加坡ＡＭＰＳ,ＴＡＣＳ,ＧＳＭ,ＤＣＳ1988274300025.8日　本ＰＤＣ,ＴＡＣＳ197992874400022.7新西兰ＡＭＰＳ,ＧＳＭ1987256750015.9韩　国ＣＤＭＡ,ＡＭＰＳ19843680000015.1马来西亚ＡＭＰＳ,ＮＭＴ,ＴＡＣＳ,ＧＳＭ,ＤＣＳ19858210000010.9台湾(中国)ＡＭＰＳ,ＧＳＭ1989216900007.9泰　国ＮＭＴ,ＡＭＰＳ,ＤＣＳ,ＧＳＭ1985819500003.3菲律宾ＡＭＰＳ,ＧＳＭ,Ｔ…     

TA两片机的二合一换代品－TA8691N

ＴＡ两片机的二合一换代品－ＴＡ８６９１Ｎ王汉平ＴＡ两片机的集成电路（即ＴＡ７６８０ＡＰ和ＴＡ７６９８ＡＰ），是日本东芝公司８０年代中期推出的。我国的国产型号为Ｄ７６８０ＡＰ、Ｄ７６８０ＣＰ和Ｄ７６９８ＡＰ、Ｄ７６９８ＣＰ。而ＴＡ８６９１Ｎ单片机集成电...     

ACPDP驱动波形的研究

从交流等离子体显示器件（ＡＣＰＤＰ）的容性结构入手，研究了ＡＣＰＤＰ的各种驱动波形及不同的驱动波形对ＡＣＰＤＰ的寿命，发光效率，发光像元间的相互作用等影响，提出了一种最佳的ＡＣＰＤＰ驱动波形。     

等离子体显示器和等离子体选址液晶显示器

由比较等离子体显示器和等离子体选址液晶显示器的性能得出结论：ＰＡＬＣＤ优于ＰＤＰ，ＰＡＬＣＤ将成为显示器件的主流产品。     

ADSP21060浮点DSP芯片及其应用

ＡＤＳＰ２１０６０是美国ＡＤ公司生产的一种速度快，实时性强的浮点型ＤＳＰ芯片，本文介绍了ＡＤＳＰ２１０１的性能特点及工作原理，并给出具体应用实例。     

介质保护膜对AC-PDP放电特性影响测量装置的研究

本文提出并采用了测量ＡＣ ＰＤＰ放电特性和加速老化特性来探求保护膜发射和稳定性能的间接测量方法,研制了模拟ＡＣ ＰＤＰ放电特性测量装置。该装置驱动电源、放电室及真空系统组成,能够模拟ＡＣ ＰＤＰ的工作条件和过程,不仅可用来测量不同材料和不同方法、工艺制成的保护膜对ＡＣ ＰＤＰ工作电压、寿命等的影响,还可用来测量ＡＣ ＰＤＰ放电单元内所充气体的种类,气体混合比例、压力以及放电间隙的距离等参数对ＡＣ     

业界风云

ＡＤＩ　ＤＳＰ使３Ｇ基础设备成本降低５０％美国模拟器件公司（ＡＤＩ）发布一种新型的安装第一层软件的ＴｉｇｅｒＳＨＡＲＣ数字信号处理器,它可使３Ｇ电信基础设备的系统成本降低到５０％。ＡＤＩ表示,只有这种ＤＳＰ解决方案才能通过“全软件”方法满足性能要求,所以ＡＤＩ公司的ＴｉｇｅｒＳＨＡＲＣ　ＡＤＳＰ－ＴＳ１０１Ｓ要比完全依赖于ＤＳＰ外加ＡＳＩＣ和ＦＰＧＡ的传统硬件方法能更好地满足制造商在增强灵活性、提高性能、降低原材料成本、增加功能方面的要求。ＴｉｇｅｒＳＨＡＲＣ除了提高性能和显著节省原材料之外,它…     

D5101芯片

Ｄ５１０１芯片ＤＳＰ通讯公司将推出Ｄ５１０１芯片以便把蜂窝数字分组数据（ＣＤＰＤ）与ＡＭＰＳ移动电话集合在一起，价格约为５００美元。ＣＤＰＤ适合于传送短的信息，如电子邮件等；ＡＭＰＳ适合于传输长文件。（炯）D5101芯片...     

通信技术标准简介

一、标准名称： ８００ＭＨｚ ＣＤＭＡ数字蜂窝移动通信网移动应用部分技术要求 二、标准编号：ＹＤ／Ｔ １０３１—１９９９ 三、发布部门：中华人民共和国信息产业部 四、发布日期：１９９９１２．２７ 四、实施日期：１９９９、１２．２７． 五、起草单位：信息产业部电信传输研究所 六、代替原标准代号及名称：ＹＤＮ０９３—１９９８《８００ＭＨｚＣＤＭＡ数字蜂窝移动通信网移动应用部分（ＭＡＰ）技术要求》 七、对修改内容的说明 本标准是在原ＹＤＮ０９３—１９９８和美国ＡＮＳＩＴＩＡ／ＥＩＡ—４１Ｄ标准和 ＴＩＡ／ＥＩＡ ＩＳ—８０７（ＰＮ－４１９７）标准的基础上,根据我国的实际情况进行了部分修改而制定的。修改的内容主要包括： 删除了有关ＤＡＭＰＳ和ＮＡＭＰＳ的内容 ＤＡＭＰＳ和ＮＡＬＭＰＳ的内容主要包括以下参数： ＮＡ－ＭＰＳ Ｃａｌｌ Ｍｏｄｅ ＮＡＭＰＳ　Ｃｈａｎｎｅｌ Ｄａｔａ ＴＤＭＡ Ｂｕｒｓｔ Ｉｎｄｉｃａｔｏｒ ＴＤＭＡ Ｃａｌｌ Ｍｏｄｅ ＴＤＭＡ Ｃｈａｎｎｅｌ Ｄａｔａ Ｖｏｉｃｅ Ｐｒｉｖａｃｙ Ｍａｓｋ（ＴＤＭＡ信道加密,ＣＤＭ４Ａ用专用长码,原文有误） 考虑到将来可能与长城网或西北五省的ＡＭＰＳ双...     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.