Effect of Substrate on Structure and Multiferrocity of (La,Mn) CoSubstituted BiFeO3 Thin Films

In this article, we report the substrate effect on ferroelectric and magnetic properties of epitaxial BiFeO₃‐based thin films at room temperature. (La, Mn) cosubstituted BiFeO₃ (BFOLM) thin films were deposited on differently lattice mismatched single‐crystal substrates to manipulate the strain states in the as‐deposited films. All the films with 30‐nm thick CaRuO₃ bottom electrodes exhibited highly epitaxial growth behavior with a slightly monoclinic distorted lattice structure while their strain states are drastically different as confirmed by X‐ray reciprocal space mapping. These films possessed significantly different macroscopic ferroelectric properties with giant remanent polarization of 101 ± 2, 65 ± 2, and 48 ± 2 μC/cm² for the films grown on SrTiO₃, (La, Sr)(Al, Ta)O₃, and LaAlO₃, respectively. It is found that the room‐temperature magnetic properties are also in accordance with their strain state, having a reciprocal relationship with polarization. For example, the enhanced magnetization is associated with the suppressed polarization and vice versa. The stain tunability of multiferroic properties in BFOLM thin films are presumably ascribed to the polarization rotation and oxygen octahedral tilts.     

Tunable multiferroic properties of Mn substituted BiFeO3 thin films

The current study explored the influence of Mn substitution on the electrical and magnetic properties of BiFeO₃ (BFO) thin films synthesized using low cost chemical solution deposition technique. X-ray diffraction analysis revealed that pure rhombohedral phase of BiFeO₃ was transformed to the tetragonal structure with P4mm symmetry on Mn substitution. A leakage current density of 5.7×10⁻⁴ A/cm² which is about two orders of magnitude lower than pure BFO was observed in 3% Mn doped BFO thin film at an external electric field >400 kV/cm. A well saturated (p-E) loops with saturation polarization (P_sat) and remanent polarization (2P_r) as high as 60.34 µC/cm² and 25.06 µC/cm² were observed in 10% Mn substituted BFO thin films. An escalation in dielectric tunability (n_r), figure of merit (K) and quality factor (Q) were observed in suitable Mn doped BFO thin films. The magnetic measurement revealed that Mn substituted BFO thin films showed a large saturation magnetization compared to pure BFO thin film. The highest saturation ~31 emu/cc was observed for 3% Mn substituted BFO thin films.     

Effect of (Zn,Mn) co-doping on the structure and ferroelectric properties of BiFeO3 thin films

BiFe_1-2xZn_xMn_xO₃ (BFZMO, with x = 0–0.05) thin films were synthesized via sol–gel method. Effects of (Zn, Mn) co-doping on the structure, ferroelectric, dielectric, and optical properties of BiFeO₃ (BFO) films were investigated. BFZMO thin films exhibit rhombohedral structure. Scanning electron microscopy (SEM) images indicate that co-doping leads to a decrease in grain size and number of defects. Leakage current density (4.60 × 10^?6 A/cm²) of BFZMO film with x = 0.02 was found to be two orders of magnitude lower than that of pristine BFO film. Owing to decreased leakage current density, saturated P–E curves were obtained. Maximum double remnant polarization of 413.2 μC/cm² was observed for BFZMO thin film with x = 0.02, while that for the BFO film was found to be 199.68 μC/cm². The reason for improved ferroelectric properties is partial substitution of Fe ions with Zn and Mn ions, which resulted in a reduction in the effect of oxygen vacancy defects. In addition, co-doping was found to decrease optical bandgap of BFO film, opening several possible routes for novel applications of these (Zn, Mn) co-doped BFO thin films.     

Enhanced dielectric and energy-storage properties in BiFeO3-modified Bi0.5(Na0.8K0.2)0.5TiO3 thin films

Lead free Bi_0.5(Na_0.8K_0.2)_0.5TiO₃ thin films doped with BiFeO₃ (abbreviated as BNKT-xBFO) (x = 0, 0.02, 0.04, 0.08, 0.10) were deposited on Pt(111)/Ti/SiO₂/Si substrates by sol-gel/spin coating technique and the effects of BiFeO₃ content on the crystal structure and electrical properties were investigated in detail. The results showed that all the BNKT-xBFO thin films exhibited a single perovskite phase structure and high-dense surface. Reduced leakage current density, enhanced dielectric and ferroelectric properties were achieved at the optimal composition of BNKT-0.10BFO thin films, with a leakage current density, dielectric constant, dielectric loss and maximum polarization of < 2 × 10⁻⁴ A/cm³, ~ 978^, ~ 0.028 and ~ 74.13 μC/cm² at room temperature, respectively. Moreover, the BNKT-0.10BFO thin films possessed superior energy storage properties due to their slim P-E loops and large maximum polarization, with an energy storage density of 22.12 J/cm³ and an energy conversion efficiency of 60.85% under a relatively low electric field of 1200 kV/cm. Furthermore, the first half period of the BNKT-0.10BFO thin film capacitor was about 0.15 μs, during which most charges and energy were released. The large recoverable energy density and the fast discharge process indicated the potential application of the BNKT-0.10BFO thin films in electrostatic capacitors and embedded devices.     

Solution-processed BiFeO3 thin films with low leakage current

Bismuth ferrite (BiFeO₃) is an attractive multiferroic material that shows strong ferroelectric and antiferromagnetic properties. Nevertheless, producing high-quality oriented BiFeO₃ on technology-important platinized silicon substrates by low-cost solution deposition methods is still challenging. In this work, polycrystalline Mn and Ti co-doped BiFeO₃ (BFO) thin films were fabricated on platinized silicon substrates by a solution deposition method. PbTiO₃ nanocrystals were used as a seed layer between the electrode and the BFO thin films to induce a preferential (100) pseudocubic orientation. We show that the introduction of a PbTiO₃ seed layer strongly reduces the leakage current. The films show excellent room-temperature ferroelectric properties at low frequencies (300 Hz), with epitaxial-like remanent polarization as high as 51 μC/cm² and coercive field of 500 kV/cm.     

Crystalline texture analyses of sputtered BiFeO3 thick films on Si with a large polarization

In our work last year (H. Zhu et al., Rhombohedral BiFeO₃ thick films integrated on Si with a giant electric polarization and prominent piezoelectricity, Acta Materialia 200 (2020) 305–314), it was demonstrated that the rhombohedral-like, (110)-textured BiFeO₃ thick films (～2 μm) sputter-deposited at 450 °C and 500 °C exhibited ultrahigh polarizations of P_r ～ 115 μC/cm² and 135 μC/cm², respectively. However, it is not sufficient to explain these ultra-high polarizations by a preferential growth mechanism and the effect of a moderate compressive strain. To further clarify the polarization enhancement of the films, the texture characteristics of these BFO thick films were quantitatively analyzed by fitting the rocking curves and pole figures to the March-Dollase model. The results showed that, in addition to the (110)-textured growth of a BFO thick film under a moderate compressive strain, the minority non-(110)-textured grains also contributed to the enhancement of the total polarization. Our study demonstrates that, the ultra-high polarizations of our BFO thick films can be well explained by adding the contribution from non-textured grains to the preferential growth of the film under a compressive strain.     

Photovoltaic Properties of Multiferroic BiFeO3/BiCrO3 Heterostructures

We report a power conversion efficiency of ~0.01% in multistacking of BiFeO₃/BiCrO₃ bilayer thin films used as active layers in a photovoltaic (PV) device. The films were epitaxially deposited by pulse laser deposition onto (100) oriented CaRuO₃‐coated LaAlO₃ substrates and were subsequently illuminated with 1 sun (AM 1.5). The fill factor is determined to be 0.31%, a remarkable value for ferroelectric‐ and multiferroic‐based PV devices. Our results demonstrate that photocurrent density and photovoltage can be tuned by varying the thickness and number of respective bilayers in the improvement of PV properties of multiferroic heterostructures. The maximum photocurrent is generated at an optimal multilayer thickness of 60 nm, with its origin being mainly ascribed to the contribution of ferroelectric polarization.     

Enhanced multiferroic properties in Pr-doped BiFe0.97Mn0.03O3 films

Bi_1−xPr_xFe_0.97Mn_0.03O₃ (x=0.00, 0.05, 0.10, 0.15, 0.20) thin films were deposited on FTO/glass substrate using chemical solution deposition. The influences of Pr doping on the crystalline structure and multiferroic properties were investigated. In the X-ray diffraction and Raman spectra results, the crystal structures of Bi_1−xPr_xFe_0.97Mn_0.03O₃ films revealed a gradual transformation from the trigonal structure to the tetragonal structure. The leakage current densities of Bi_1−xPr_xFe_0.97Mn_0.03O₃ films are one order of magnitude lower than that of BiFeO₃. Compared with unsaturated polarization-electric field hysteresis loop of BiFeO₃ film, the Pr and Mn co-doped BFO films have significantly improved ferroelectric properties. The improved remnant polarization (Pr=91.3 µC/cm²) and the positive switching current (I=0.028 A) have been observed in Bi_0.85Pr_0.15Fe_0.97Mn_0.03O₃ film. The improved electrical properties are attributed to the structure transformation, increasing grain boundaries, low oxygen vacancies ratio and increasing Fe³⁺ concentration. In addition, the saturation magnetization of Bi_0.85Pr_0.15Fe_0.97Mn_0.03O₃ film is 1.81 emu/cm³, which is approximately three times higher than pure BiFeO₃ (M_s=0.67 emu/cm³).     

Enhanced ferroelectric properties of Ce-substituted BiFeO3 thin films on LaNiO3/Si substrates prepared by sol–gel process

The effects of Ce substitution on the structural and electrical properties of multiferroic BiFeO₃ thin films grown on LaNiO₃/Si(1 0 0) substrates by a sol–gel process have been reported. X-ray diffraction data confirmed the substitutions of Ce into the Bi site with the elimination of all secondary phases under a substitution ratio x = 15%. The dielectric constants of the films increased from 90 to ～260 below 100 kHz with 5% molar Ce substitution and the films showed enhanced dielectric behavior. We observed a substantial increase in the remnant polarization (P_r) with Ce substitution and obtained a maximum value of ～71 μC/cm² by 5% molar Ce incorporation. The leakage current behavior at room temperature of the films was studied and it was found that the leakage current density decreased from 10^?6 to 10^?8 A/cm² for 5% molar Ce-substituted films under a field 150 kV/cm. The reduction of dc leakage current of Ce-substituted films is explained on the basis of relative phase stability and improved microstructure of the material.     

Structural and electrical properties of sol–gel-derived Al-doped bismuth ferrite thin films

Al-doped BiFeO₃ (BiFe_(1?x)Al_xO₃) thin films with small doping content (x=0, 0.05, and 0.1) were grown on Pt(111)/TiO₂/SiO₂/Si substrates at the annealing temperature of 550 °C for 5 min in air by the sol–gel method. The crystalline structure, as well as surface and cross section morphology were studied by X-ray diffraction and scanning electron microscope, respectively. The dielectric constant of BiFeO₃ film was approximately 71 at 100 kHz, and it increased to 91 and 96 in the 5% and 10% Al-doped BiFeO₃ films, respectively. The substitution of Al atoms in BiFeO₃ thin films reduced the leakage current obviously. At an applied electric field of 260 kV/cm, the leakage current density of the undoped BiFeO₃ films was 3.97×10^?4 A/cm², while in the 10% Al-substitution BiFeO₃ thin films it was reduced to 8.4×10^?7 A/cm². The obtained values of 2P_r were 63 μC/cm² and 54 μC/cm² in the 5% and 10% Al-doped BiFeO₃ films at 2 kHz, respectively.     

Solution Synthesis of BiFeO3 Thin Films onto Silicon Substrates with Ferroelectric,Magnetic, and Optical Functionalities

Single‐BiFeO₃ perovskite films onto Pt‐coated silicon substrates have been fabricated by chemical solution deposition using a synthesis strategy based on the use of nonhazardous reagents. Different routes were tested to obtain precursors for the deposition of the films, inferring that bismuth (III) nitrate and iron (III) 2,4‐pentanedionate dissolved in acetic acid and 1,3‐propendiol led to the best solution. Ferroelectric, magnetic, and optical functionalities were demonstrated in these films, obtaining a high ferroelectric polarization at room temperature, ~67 μC × cm^?2, a dependence of the magnetization with the film thickness, 0.60 and 2.50 emu × g^?1 for the ~215 and ~42‐nm‐thick films, and a direct band gap in the visible range, E_g ~2.82 eV. These results support the interest of solution methods for the fabrication of BiFeO₃ thin films onto the silicon substrates required in microelectronic devices.     

Tailoring the multiferroic properties of BiFeO3 by co-doping Er at Bi site with aliovalent Nb,Mn and Mo at Fe site

Single phase multiferroic undoped BiFeO₃ notoriously suffers due to the poor spin–charge coupling resulting in limitations to device applications. The present work focuses on the tailoring of its multiferroic and magnetoelectric coupling properties by synthesizing multiferroic Bi_0.95Er_0.05Fe_0.98TM_0.02O₃ (TM = Nb, Mn and Mo) ceramics. The ferroelectric, magnetic, current leakage measurements and magnetoelectric effect were investigated. XRD along with the Reitveld refinement results confirms that all the samples possess perovskite based rhombohedral structure and reveals that doping of (Er, Nb), (Er, Mn) and (Er, Mo) induced the crystallographic distortion in the BFO lattice and hence induced a variation in the bond lengths and bond angle. Dual doping significantly enhanced the electrical, magnetic properties and magnetoelectric coupling as compared to BiFeO₃. Doping has lowered the leakage current by three to four orders compared to BFO. The lattice distortion, reduced leakage current and destruction of spin–cycloidal structure could be the origin for these improved features. The (Er, Nb) doped BiFeO₃ yields enhanced ferroelectric character with the maximum polarization value of 0.46 µC/cm², maximum ME coupling of 0.22 mV/cm at a magnetic field of 130 G, an improved magnetization with a remanance value of 0.0903 emu/g and the lowest leakage current density.     

Structural and ferroelectric properties of chemical solution deposited (Nd,Cu) co-doped BiFeO3 thin film

Effects of (Nd, Cu) co-doping on the structural, electrical and ferroelectric properties of BiFeO₃ polycrystalline thin film have been studied. Pure and co-doped thin films were prepared on Pt(111)/Ti/SiO₂/Si(100) substrates by using a chemical solution deposition method. Significant improvements in the electrical and the ferroelectric properties were observed for the co-doped thin film. The remnant polarization (2P_r) and the coercive field (2E_c) of the co-doped thin film were 106 μC/cm² and 1032 kV/cm at an applied electric field of 1000 kV/cm, respectively. The improved properties of the co-doped thin film could be attributed to stabilized perovskite structures, reduced oxygen vacancies and modified microstructures.     

Effects of Ho and Ti Doping on Structural and Electrical Properties of BiFeO3 Thin Films

Effects of Ho and Ti ions individual doping and co‐doping on the structural, electrical, and ferroelectric properties of the BiFeO₃ thin films are reported. Pure BiFeO₃, (Bi_0.9Ho_0.1)FeO₃, Bi(Fe_0.98Ti_0.02)O_3+δ, and (Bi_0.9Ho_0.1)(Fe_0.98Ti_0.02)O_3+δ thin films were prepared on Pt(111)/Ti/SiO₂/Si(100) substrates by using a chemical solution deposition method. All thin films were crystallized in distorted rhombohedral structure containing no secondary or impurity phases confirmed by using an X‐ray diffraction study. Changes in microstructural features, such as grain morphology and grain size distribution, for the doped samples were analyzed by a scanning electron microscopy. From the experimental results, a low electrical leakage (1.2 × 10^?5 A/cm² at 100 kV) and improved ferroelectric properties, such as a large remnant polarization (2P_r) of 52 μC/cm² and a low coercive field (2E_c) of 886 kV/cm, were observed for the (Bi_0.9Ho_0.1)(Fe_0.98Ti_0.02)O_3+δ thin film. Fast current relaxation and stabilization observed in the (Bi_0.9Ho_0.1)(Fe_0.98Ti_0.02)O_3+δ imply effective reduction and neutralization of charged free carriers.     

In situ study of electric-field-induced ferroelectric and antiferromagnetic domain switching in polycrystalline BiFeO3

Antiferromagnetic domain switching induced by ferroelectric polarization switching has previously been observed in situ in both multiferroic BiFeO₃ single crystals and thin films. Despite a number of reports on macroscopic magnetoelectric measurements on polycrystalline BiFeO₃, direct in situ observation of electric-field-induced antiferromagnetic domain switching in this material has not been addressed due to the lack of high-quality samples capable of electrical poling. Here, the electric field control of antiferromagnetic domain texture is identified in polycrystalline BiFeO₃ using in situ neutron diffraction, showing the resultant magnetic domain reorientation induced by an electric field. An antiferromagnetic domain reorientation to a value of 2.2-2.5 multiples of a random distribution (MRD) is found to be induced by an electric field that provides a non-180° ferroelectric-ferroelastic domain texture of 2.2-2.5 MRD along the field direction. The current results show well-controlled coupling of multiferroic domain texturing in single-phase polycrystalline BiFeO₃.     

Enhanced multiferroic properties of Bi4Ti3-xCoxO12/La0.67Sr0.33MnO3 layered composite thin films

In this work, Bi₄Ti_3-xCo_xO₁₂/La_0.67Sr_0.33MnO₃ (BITC_x/LSMO, x = 0.025, 0.05, 0.10 and 0.15) layered magnetoelectric (ME) composite thin films were successfully synthesized by chemical solution deposition, and the effect of Co²⁺ doping content on the microstructure, leakage, dielectric property, ferroelectricity, ferromagnetism and ME coupling performance of BITC_x/LSMO composite thin films was investigated. Co²⁺ doping induces improved ferroelectricity and weak ferromagnetism for the BITC_x phase. Especially, the single-phase BITC_0.05 film exhibits a maximum ME voltage coefficient (α_E) of 0.445 mV/cm·Oe at room temperature, suggesting excellent single-phase multiferroic properties. The BITC_0.05/LSMO composite thin film possesses the lowest leakage current density, maximum ?_r, minimum tanδ, highest remnant polarization of 24.2 μC/cm², lowest coercive field of 137 kV/cm and improved saturation magnetization along with a maximum a_E value of 27.3 V/cm·Oe. Based on these findings, Co²⁺-doped Bi₄Ti₃O₁₂ has excellent single-phase multiferroic properties, and the incorporation of magnetic ion-doped Bi₄Ti₃O₁₂ with ferromagnetic oxides benefits the improvement of ME composite thin films.     

Investigation of Tb-doping on structural transition and multiferroic properties of BiFeO3 thin films

Pure BiFeO₃ (BFO) and Bi_1−xTb_xFeO₃ (BTFO) thin films were successfully prepared on FTO (fluorine doped tin oxide) substrates by the sol–gel spin-coating method. The effects of Tb-doping on the structural transition, leakage current, and dielectric and multiferroic properties of the BTFO thin films have been investigated systematically. XRD, Rietveld refinement and Raman spectroscopy results clearly reveal that a structural transition occurs from the rhombohedral (R3c:H) to the biphasic structure (R3c:H+R-3m:R) with Tb-doping. The leakage current density of BTFO_x=0.10 thin film is two orders lower than that of the pure BFO, i.e. 5.1×10⁻⁷ A/cm² at 100 kV/cm. Furthermore, the electrical conduction mechanism of the BTFO thin films is dominated by space-charge-limited conduction. The two-phase coexistence of BTFO_x=0.10 gives rise to the superior ferroelectric (2P_r=135.1 μC/cm²) and the enhanced ferromagnetic properties (M_s=6.3 emu/cm³). The optimal performance of the BTFO thin films is mainly attributed to the biphasic structure and the distorted deformation of FeO₆ octahedra.     

Enhancement of electrical properties of (Gd,V) co-doped BiFeO3 thin films prepared by chemical solution deposition

Pure BiFeO₃ (BFO) and (Bi_0.9Gd_0.1)(Fe_0.975V_0.025)O_3+δ(BGFVO) thin films were prepared on Pt(111)/Ti/SiO₂/Si(100) substrates by using a chemical solution deposition method. The improved electrical properties were observed in the BGFVO thin film. The leakage current density of the co-doped BGFVO thin film showed two orders lower than that of the pure BFO, 8.1×10^?5 A/cm² at 100 kV/cm. The remnant polarization (2P_r) and the coercive electric field (2E_c) of the BGFVO thin film were 54 μC/cm² and 1148 kV/cm with applied electric field of 1100 kV/cm at a frequency of 1 kHz, respectively. The 2P_r values of the BGFVO thin film show the dependence of measurement frequency, and it has been fairly saturated at about 30 kHz.     

Effect of BNBTKNN on the electrical properties of bismuth ferrite thin films

BiFeO₃/[0.93(Bi_0.50Na_0.50TiO₃)-0.05BaTiO₃-0.02K_0.50Na_0.50NbO₃] (BFO/BNBTKNN) bilayered thin films were fabricated on Pt/TiO₂/SiO₂/Si substrates without any buffer layers by a combined sol-gel and radio frequency sputtering route. Effect of BNBTKNN on electrical properties of BFO/BNBTKNN thin films was investigated. A higher phase purity and a denser microstructure are induced for the BFO/BNBTKNN bilayered thin film by using the bottom BNBTKNN layer, resulting in its lower leakage current density. Moreover, the enhancement in dielectric behavior is also demonstrated for such a bilayer, where a high dielectric constant and a low dielectric loss are obtained. The BFO/BNBTKNN bilayered thin film has an improved multiferroic behavior: 2P_r ∼ 76.8 μC/cm², 2E_c ∼ 378.1 kV/cm, 2M_s ∼ 52.6 emu/cm³, and 2H_c ∼ 453.6 Oe, together with a low fatigue rate up to ∼1 × 10⁹ switching cycles.     

Rearrangement of Multiferroic BiFeO3 Nanodots Smaller than 15 nm Using Atomic Force Microscopy

In this study, we demonstrate an atomic force microscopy process for manipulating multiferroic BiFeO₃ nanodots smaller than 15 nm to desired positions on a Nb‐doped SrTiO₃ substrate. For formation of the BiFeO₃ nanodot array, nanocrystal movement was achieved using a +1.2 V biased conducting atomic force microscopy (CAFM) followed by nanocrystal attachment to the tip. Using this method, high‐density BiFeO₃ nanodot arrays with a density greater than 0.5 Tb/in.² can be achieved. Perfectly flipped ferroelectric polarization with an external electric field was observed for each BiFeO₃ nanodot, whose ferroelectric properties were confirmed using piezoelectric force microscopy.