Bayesian inference‐based small‐signal modeling technique for GaN HEMTs

A new modeling methodology for gallium nitride (GaN) high‐electron‐mobility transistors (HEMTs) based on Bayesian inference theory, a core method of machine learning, is presented in this article. Gaussian distribution kernel functions are utilized for the Bayesian‐based modeling technique. A new small‐signal model of a GaN HEMT device is proposed based on combining a machine learning technique with a conventional equivalent circuit model topology. This new modeling approach takes advantage of machine learning methods while retaining the physical interpretation inherent in the equivalent circuit topology. The new small‐signal model is tested and validated in this article, and excellent agreement is obtained between the extracted model and the experimental data in the form of dc I–V curves and S‐parameters. This verification is carried out on an 8 × 125 μm GaN HEMT with a 0.25 μm gate feature size, over a wide range of operating conditions. The dc I–V curves from an artificial neural network (ANN) model are also provided and compared with the proposed new model, with the latter displaying a more accurate prediction benefiting, in particular, from the absence of overfitting that may be observed in the ANN‐derived I–V curves.     

Large‐signal distributed millimeter‐wave multifinger pHEMT modeling using time‐domain technique

The finite‐difference time‐domain (FDTD) method is used for the large‐signal modeling of a multifinger pHEMT, which is considered as five nonlinear coupled distributed transmission lines. The developed model, which is based on the exact physical layout of multifinger pHEMT, not only accurately describes the propagation effects along the electrodes at higher frequencies but it also includes major nonlinearities of the I–V and Q–V characteristics. Using the transmission line theory, a proper nonlinear equivalent lumped circuit model is allocated for the differential length of the quintuple‐line transistor and the nonlinear active multiconductor transmission line (NAMCTL) equations are derived. These nonlinear, coupled differential equations are numerically solved using the FDTD method. The proposed model is applied to a 100 nm GaAs pHEMT and the simulation results are compared with the results of conventional sliced model in Keysight ADS simulator. The developed transient nonlinear model accurately predicts both the S‐parameters (1–150 GHz) and large‐signal power performances especially at millimeter wave frequency range. The proposed model can be useful in design and analysis of various types of high‐frequency nonlinear integrated circuits.     

Microwave frequency small‐signal equivalent circuit parameter extraction for AlInN/GaN MOSHEMT

This article presents an accurate and efficient extraction procedure for microwave frequency small‐signal equivalent circuit parameters of AlInN/GaN metal‐oxide‐semiconductor high electron mobility transistor (MOSHEMT). The parameter extraction technique is based on the combination of conventional and optimization methods using the computer‐aided modeling approach. The S‐, Y‐, and Z‐ parameters of the model are extracted from extensive dynamic AC simulation of the proposed device. From the extracted Y‐ and Z‐ parameters the pad capacitances, parasitic inductances and resistances are extracted by operating the device at low and high frequency pinch‐off condition depending upon requirement. Then, the intrinsic elements are extracted quasi analytically by de‐embedding the extrinsic parameters. S‐parameter simulation of the developed small‐signal equivalent circuit model is carried out and is compared with TCAD device simulation results to validate the model. The gradient based optimization approach is used to optimize the small‐signal parameters to minimize the error between developed SSEC model and device simulation based s‐parameters. The microwave characteristics of optimized SSEC model is carried out (f_T = 169 GHz and f_max = 182 GHz) and compared with experimental data available from literature to validate the model.     

Energy harvesting from far field RF signals

In this article, an alternative source of energy harvesting is proposed. It is based on the concept of charge pump electronics circuit and radio frequency (RF) signal amplifier. The RF signals are acquired by the Dickson charge pump circuit, amplified, and converted into a desired DC signal. To ensure the maximum power extraction, the proposed energy harvester circuit includes multiple circuit level approach. The diode‐capacitor charge pump generated the step‐up stage in the system. The proposed idea is designed and implemented using a suitable hardware successfully. Initially, the designed circuit is simulated and tested using the MultiSim software and then hardware implemented to obtained the desired 1‐5 V DC signal. The presented circuit can be used in various applications such as electronic devices charging, power supply, energy harvesting, etc.     

Neural network modeling of microwave FETs based on third‐order distortion characterization

A new method for characterization of HEMT distortion parameters, which extracts the coefficents of a Taylor series expansion of I_ds(V_gs, V_ds), including all cross‐terms, is developed from low‐frequency harmonic measurements. The extracted parameters will be used either in a Volterra series model around a fixed bias point for 3^rd‐order characterization of small‐signal I_ds nonlinearity, or in a large‐signal model of I_ds characteristic, where its partial derivatives are locally characterized up to the 3^rd order in the whole bias region, using a novel neural‐network representation. The two models are verified by one‐tone and two‐tone intermodulation distortion (IMD) tests on a PHEMT device. © 2006 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2006.     

Bias‐dependent small‐signal modeling of GaAs PIN diodes

A new bias‐dependent small‐signal GaAs PIN diode model is described that is suitable for use in design of circuits like variable attenuators and limiters. The equivalent circuit parameters are extracted from bias‐dependent S‐parameters measured from 1 to 26 GHz for 35 bias currents. Bias‐dependent equations are then curve fitted, and then incorporated into a commercially available computer‐aided design (CAD) simulator. Measured and modeled data track each other very well over a range of bias conditions. © 2001 John Wiley & Sons, Inc. Int J RF and Microwave CAE 11: 99–106, 2001.     

Bias‐dependent small‐signal monolithic PIN diode modeling

This paper details a new bias‐dependant small‐signal modeling methodology for monolithic PIN diodes. The frequency‐dependent responses of intrinsic p‐i‐n structures are de‐embedded from monolithic microwave integrated circuit PIN diodes of varying size and layout configuration and fit from 6 to 45 GHz to a classical linear model at each of 15 different bias levels. This methodology results in a bias‐dependent intrinsic diode data set that shows excellent agreement with large samples of small‐signal measurements. The models are useful for comparing trade‐offs in electrical performance among PIN diodes of varying size and layout style. © 2001 John Wiley & Sons, Inc. Int J RF and Microwave CAE 11: 396–403, 2001.     

Application of data mining methods to efficient microwave active device modeling

In this work, the signal and noise behaviors of a microwave transistor within its operation domain (voltage drain to source–V_DS, current of drain to source—I_DS, frequency—f) are modeled by data mining techniques (DMT) without using any information on the microwave circuit theory. The device is modeled by a black box whose small signal (S) and noise parameters are evaluated through data mining techniques, based on the fitting of both of these parameters for multiple bias and configuration. It has been shown that DMT have a high potential of faithful and efficient device modeling. © 2012 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2013.     

A novel gate driver circuit for depletion‐mode a‐IGZO TFTs

In this paper, a novel gate driver circuit, which can achieve high reliability for depletion mode in a‐InGaZnO thin‐film transistors (TFTs), was proposed. To prevent the leakage current paths for Q node effectively, the new driving method was proposed by adopting the negative gate‐to‐source voltage (V_GS) value for pull‐down units. The results showed all the V_OUT voltage waveforms were maintained at VGH voltage despite depletion‐mode operation. The proposed circuit could also obtain stable V_OUT voltage when the threshold voltage for all TFTs was changed from ?6.5 to +11.5 V. Therefore, the circuit can achieve high reliability regardless of threshold voltage value for a‐IGZO TFTs. In addition, the output characteristics and total power consumption were shown for the alternating current (AC)–driven and direct current (DC)–driven methods based on 120‐Hz full‐HD graphics (1920 × 1080) display panel. The results showed that the AC‐driven method could achieve improved V_OUT characteristics compared with DC‐driven method since the leakage current path for Q node can be completely eliminated. Although power consumption of the AC‐driven method can be slightly increased compared with the DC‐driven method for enhancement mode, consumption can be lower when the operation has depletion‐mode characteristics by preventing a leakage current path for pull‐down units. Consequently, the proposed gate driver circuit can overcome the problems caused by the characteristics of a‐IGZO TFTs.     

Amorphous‐oxide TFT backplane for large‐sized AMOLED TVs

Abstract— Amorphous‐oxide thin‐film‐transistor (TFT) arrays have been developed as TFT backplanes for large‐sized active‐matrix organic light‐emitting‐diode (AMOLED) displays. An amorphous‐IGZO (indium gallium zinc oxide) bottom‐gate TFT with an etch‐stop layer (ESL) delivered excel lent electrical performance with a field‐effect mobility of 21 cm²/V‐sec, an on/off ratio of >10⁸, and a subthreshold slope (SS) of 0.29 V/dec. Also, a new pixel circuit for AMOLED displays based on amorphous‐oxide semiconductor TFTs is proposed. The circuit consists of four switching TFTs and one driving TFT. The circuit simulation results showed that the new pixel circuit has better performance than conventional threshold‐voltage (VTH) compensation pixel circuits, especially in the negative state. A full‐color 19‐in. AMOLED display with the new pixel circuit was fabricated, and the pixel circuit operation was verified in a 19‐in. AMOLED display. The AMOLED display with a‐IGZO TFT array is promising for large‐sized TV because a‐IGZO TFTs can provide a large‐sized backplane with excellent uniformity and device reliability.     

Analysis of interface states of metal–insulator–semiconductor photodiode with n-type silicon by conductance technique

A metal–insulator–semiconductor photodiode (MIS-PD) as active layer with n-type silicon as interdigitated Schottky electrodes has been fabricated. The current–voltage characteristics, density of interface states and photovoltaic properties of the MIS-PD diode have been investigated. The diode has a metal–insulator–semiconductor configuration with ideality factor higher than unity. The electronic parameters (ideality factor, series resistance and barrier height) of the diode were found to be 1.94, 2.23 × 10⁴ Ω and 0.74, respectively. At voltages between 0.13 and 0.50 V, the charge transport mechanism of the diode is controlled by space charge-limited current mechanism. The interface state density of the diode was found to vary from 5.54 × 10¹² to 5.67 × 10¹² eV⁻¹ cm⁻² with bias voltage. The Au/SiO₂/n-Si/Al device shows a photovoltaic behavior with a maximum open circuit voltage V_oc of 97.7 mV and short-circuit current I_sc of 17.4 μA under lower illumination intensities. The obtained electronic parameters confirm that the Au/SiO₂/n-Si/Al diode is a MIS type photodiode.     

FPC‐free LCD panel with capacitive coupling for transmission of signals and power

Abstract— A flexible‐printed‐cable (FPC) free liquid‐crystal‐display (LCD) panel by using a capacitive‐coupling technique has been developed. A QQVGAeight‐color image was successfully displayed for the first time without attaching any signal or power cables to the panel. The receiving circuitry and capacitive‐coupling electrodes were integrated on the LCD panel using a low‐temperature polysilicon (LTPS) fabrication process. In the proposed digital coding method, the receiving circuit converts derivative waveform signals via the capacitive coupling to conventional logic‐level signals. The maximum data rate of 2.4‐Mbps × 3ch (RGB) was achieved. In addition, LTPS low‐capacitance diode bridge and regulator enabled us to obtain stable DC power of 2.4 mW on the panel from the AC‐power signal. This study is the first step towards integrating the wireless‐communication function on the display panel to achieve a high‐value‐added flat‐panel display (FPD).     

Modeling and simulation of a grid connected PV system based on the evaluation of main PV module parameters

In this work we present a new method for the modeling and simulation study of a photovoltaic grid connected system and its experimental validation. This method has been applied in the simulation of a grid connected PV system with a rated power of 3.2 Kw_p, composed by a photovoltaic generator and a single phase grid connected inverter. First, a PV module, forming part of the whole PV array is modeled by a single diode lumped circuit and main parameters of the PV module are evaluated. Results obtained for the PV module characteristics have been validated experimentally by carrying out outdoor I-V characteristic measurements. To take into account the power conversion efficiency, the measured AC output power against DC input power is fitted to a second order efficiency model to derive its specific parameters.The simulation results have been performed through Matlab/Simulink environment. Results has shown good agreement with experimental data, whether for the I-V characteristics or for the whole operating system. The significant error indicators are reported in order to show the effectiveness of the simulation model to predict energy generation for such PV system.     

Vt Compensated voltage‐data a‐Si TFT AMOLED pixel circuits

Abstract— Active‐matrix organic light‐emitting‐diode (AMOLED) displays are now entering the marketplace. The use of a thin‐film‐transistor (TFT) active matrix allows OLED displays to be larger in size, higher in resolutions and lower in power dissipation than is possible using a conventional passive matrix. A number of TFT active‐matrix pixel circuits have been developed for luminance control, while correcting for initial and electrically stressed TFT parameter variations. Previous circuits and driving methods are reviewed. A new driving method is presented in which the threshold‐voltage (V_t) compensation performance, along with various circuit improvements for amorphous‐silicon (a‐Si) TFT pixel circuits using voltage data, are discussed. This new driving method along with various circuit improvements is demonstrated in a state‐of‐the‐art 20‐in. a‐Si TFT AMOLED HDTV.     

Physical/electromagnetic analysis of multifinger MOSFETs with SB‐SP combined methods

The frequency‐domain spectral balance technique has been demonstrated to be a viable alternative to the mixed‐domain Harmonic Balance technique. It has already been applied to the space‐domain polynomial expansion of the physical quantities inside the semiconductor, for the solution of steady‐state nonlinear differential equations, for the physical analysis of high‐frequency semiconductor devices. In this article it is coupled to a commercial electromagnetic solver, for the combined physical and electromagnetic analysis of multifinger MOSFET devices in linear and nonlinear regime. This method allows a fast and effective CAD analysis both in DC and RF periodic regime for very high frequencies. A quasi‐2D hydrodynamic formulation is used for a 0.35 μm gate length with a total 30 μm periphery, three finger MOSFET device; results are compared with those of a standard physical time‐domain, a harmonic balance and a spectral balance analysis for comparison of numerical efficiency. Moreover, comparison of S‐parameters with a commercial CAD tool with a compact model for circuit analysis is also given. © 2009 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2010.     

Small signal modeling of GaAs PIN diodes aided by electromagnetic analysis

A systematic procedure is described for determination of GaAs PIN diode equivalent circuit models from measured S‐parameter data combined with an electromagnetic analysis of the feed structure. A new parasitic and intrinsic model topology is proposed, and found to be better suited than prior models for the particular GaAs PIN structures considered in this work. Models were developed for forward bias currents ranging from 0.01 to 100 mA, and example measured and modeled results are included to validate the approach. © 2001 John Wiley & Sons, Inc. Int J RF and Microwave CAE 11: 61–68, 2001.     

Modeling power and intermodulation behavior of microwave transistors with unified small‐signal/large‐signal neural network models

This article presents a detailed procedure to learn a nonlinear model and its derivatives to as many orders as desired with multilayer perceptron (MLP) neural networks. A modular neural network modeling a nonlinear function and its derivatives is introduced. The method has been used for the extraction of the large‐signal model of a power MESFET device, modeling the nonlinear relationship of drain‐source current I_ds as well as gate and drain charge Q_g and Q_d with respect to intrinsic voltages V_gs and V_ds over the whole operational bias region. The neural models have been implemented into a user‐defined nonlinear model of a commercial microwave simulator to predict output power performance as well as intermodulation distortion. The accuracy of the device model is verified by harmonic load‐pull measurements. This neural network approach has demonstrated to predict nonlinear behavior with enough accuracy even if based only on first‐order derivative information. © 2003 Wiley Periodicals, Inc. Int J RF and Microwave CAE 13: 276–284, 2003.     

Surface impedance of silicon substrates and films

It is shown that at microwave–millimeterwave frequencies and for DC resistivities below ρ⁺=(2πf_τε₀ε_L)⁻¹ silicon should be regarded as a lossy metal characterized by resistivity, skin depth, and surface impedance, while at higher resistivities it may be regarded as a lossy dielectric characterized by a lattice dielectric constant (ε_L=11.7) and loss tangent. The sheet resistance defined as a ratio of DC resistivity to film thickness is not an adequate parameter to characterize the films at microwave frequencies. The surface impedance of a thin semiconductor film is complex with both real and imaginary parts strongly dependent on frequency, DC resistivity of substrate and film, substrate thickness, and the presence of a ground plane on the backside of the substrate. © 1998 John Wiley & Sons, Inc. Int J RF and Microwave CAE 8: 433–440, 1998     

An external compensation method for AMOLED using the concept of ramp‐stop

In this paper, we propose an external feedback method to compensate the device variation for active‐matrix organic light‐emitting diode. The pixel data current is controlled by ramping the gate voltage and converted to the sensed voltage V_sense in real time. When V_sense is equal to a preset voltage V_data, the switching block outputs the low potential to stop the ramping. Therefore, the gate voltage is locked at the value corresponding to the target data current. This circuit is implemented with three thin‐film transistors in the active area and some functional blocks in driver integrated circuit (IC), namely, sentinel block, current‐voltage converting block, and switching block. Unlike the other usual methods of external compensation requiring double number of connections between driver IC and glass, by using the common ramping signal and a simple circuit made on glass, the proposed method can be implemented with only one pin per column.     

A LTPS-TFT pixel circuit for active matrix organic light emitting diode based on improved current mirror

In this paper, a voltage-driving and current compensation method for active matrix organic light emitting diode (AMOLED) displays is proposed. An improved current mirror is introduced into the pixel circuit to overcome the channel length modulation effect of TFTs. The SPICE simulation results show that the proposed pixel circuit not only effectively compensates for non-idealities related with deviations of μ and V_T in TFTs, the OLED degradation, but also offers a less setting time and guarantees a good liner relationship between V_DATA and I_OLED.