Flat panel detector based on a shadow mask plasma display panel

A flat panel detector based on the structure of a shadow mask plasma display panel is analyzed in terms of the electron amplification factor when used in the Townsend mode. The detector consists of a metal shadow mask and two ultra‐thin glass substrates with electrodes depositing on them. The shadow mask divides the detecting area into arrays of independent cells. The electron gain and linearity of the device are investigated by simulation based on the particle‐in‐cell/Monte Carlo collision model. Similar experiments are carried out. Both experimental and simulation results show that the linearity of the detector is significant. The applied voltages and the effective cathode area are parameters affecting its gain. As the avalanche process in the center of the cell with small electric field strength is much smaller than that near the shadow mask edge, the gain increases exponentially with the anode voltage but decreases with the negative shadow mask voltage. The balance between effective cathode area and high electric field intensity near the shadow mask edge provides room for future optimization of the detector. In conclusion, the flat panel detector is a promising component in a detection system for high energy radiation, and the wide application of the device is expected.     

Cooperative downconversion in Y3Al5O12 : RE3+,Yb3+ (RE = Tb,Tm, and Pr) nanophosphors

Abstract— Efficient near‐infrared (NIR) quantum cutting (QC) through cooperative downconversion in Y₃Al₅O₁₂ : RE³⁺,Yb³⁺ (RE = Tb, Tm, and Pr) nanophosphors has been demonstrated, which involves the conversion of the visible photon from RE³⁺ into the NIR emission of Yb³⁺ with the optimal quantum efficiency approaching 200%. The authors have analyzed the measured luminescence spectra and decay lifetimes and propose a mechanism to rationalize the NIR QC effect. The results indicate the potential of developing RE³⁺‐Yb³ dual‐ion‐based nanophosphors for the downconversion of high‐energy photons to multiple photons with an energy greater than the bandgap of silicon‐based‐photonics display devices.     

Application of AC plasma display panels to radiation detectors

Radiation detector proposals that use plasma display panels are rare. In this work, we confirmed a radiation detector that uses plasma display panels that are focused on the breakdown voltage shift in the ramp waveform. We adapted the cell structures, gas contents, and waveforms of plasma display panels (AC‐PDPs) for radiation detectors. Hard X‐rays and gamma rays induce electron emission into the discharge gas, resulting in generating electrons, electron multiplication, and charge accumulation on dielectrics. The radiation dose rate of hard X‐rays and gamma rays (Cs137) is measured as a breakdown voltage shift between anodes and cathodes. For gamma rays, the detection sensitivity in this experiment is not as high as in the case of hard X‐rays, but the detector can locate gamma rays. These results suggest that adapted AC‐PDPs can detect both hard X‐rays and gamma rays and can be used in a large two‐dimensional radiation detector.     

Ultra‐FFS TFT‐LCD with super image quality,fast response time,and strong pressure‐resistant characteristics

Fringe‐field‐switching (FFS) devices using liquid‐crystal (LC) with a negative dielectric anisotropy exhibit high transmittance and wide viewing angle simultaneously. Recently, we have developed an “Ultra‐FFS” thin‐film‐transistor (TFT) LCD using LC with a positive dielectric anisotropy that exhibits high transmittance, is color‐shift free, has a high‐contrast ratio in a wide range, experiences no crosstalk and has a fast response time of 25 msec. In this paper, the device concept is discussed, and, in addition, the pressure‐resistant characteristics of the devices compared with that of the twisted‐nematic (TN) LCD is discussed.     

Active‐matrix field‐emission display based on a CNT emitter and a‐Si TFTs

Abstract— An active‐matrix field‐emission display (AMFED), based on carbon‐nanotube (CNT) emitters and amorphous‐silicon thin‐film transistors (a‐Si TFTs), was developed. The AMFED pixels consisted of a high‐voltage a‐Si TFT and mesh‐gated CNT emitters. The AMFED panel demonstrated high performance for a driving voltage less than 15 V. The low‐cost large‐area AMFED approach using a metal‐mesh technology is proposed.     

Sphere‐supported thin‐film electroluminescence: A new platform technology for displays and lighting

Abstract— Currently, powder electroluminescence is used for low‐brightness flexible lamps offering durable plastic‐based lighting solutions principally for low‐ambient light conditions where lighting or backlighting is required. Sphere‐supported thin‐film electroluminescence (SSTFEL) promises dramatic new capability in both flexible lamps and displays owing to its high brightness and long‐life capability. SSTFEL is based on robust thin‐film phosphors deposited on spherical ceramic dielectric particles which are embedded in a thin plastic sheet. A printing approach permits versatile, low‐cost manufacturing of patterned SSTFEL devices and eliminates the need for high‐temperature substrates.     

Near‐infrared‐emitting ZnS: Er and ZnS(Se): Cr TFEL devices

Abstract— Electroluminescent near‐infrared (NIR) emitters are of interest in creating special displays for applications such as communications, chemical sensoring, friend‐and‐foe identification, aligning and checking systems that detect NIR radiation, medicine, etc. By performing this research, known NIR emitters (thermal sources, semiconductor diodes and lasers, and solid‐state lasers) were supplemented by NIR‐emitting TFEL devices based on ZnS: Er(F) and ZnS(Se): Cr electron‐beam‐evaporated films. Some characteristics of these devices as NIR emitters are given. There are two narrow intensive bands at ^～980 and ～1530 nm in the emission spectrum of ZnS: Er(F) TFEL devices. The broadband emission is the range of from 1.8 μm up to 2.7 μm takes place in the ZnS(Se): Cr devices. The wavelength of the peak emission can be varied owing to interference. The mechanism of electroluminescence in the ZnS: Er(F) and ZnS(Se): Cr devices is the direct impact excitation of Er³⁺ and Cr²⁺ ions, respectively.     

Highly reliable a‐IGZO TFTs on a plastic substrate for flexible AMOLED displays

We have successfully reduced threshold voltage shifts of amorphous In–Ga–Zn–O thin‐film transistors (a‐IGZO TFTs) on transparent polyimide films against bias‐temperature stress below 100 mV, which is equivalent to those on glass substrates. This high reliability was achieved by dense IGZO thin films and annealing temperature below 300 °C. We have reduced bulk defects of IGZO thin films and interface defects between gate insulator and IGZO thin film by optimizing deposition conditions of IGZO thin films and annealing conditions. Furthermore, a 3.0‐in. flexible active‐matrix organic light‐emitting diode was demonstrated with the highly reliable a‐IGZO TFT backplane on polyimide film. The polyimide film coating process is compatible with mass‐production lines. We believe that flexible organic light‐emitting diode displays can be mass produced using a‐IGZO TFT backplane on polyimide films.     

Letter: Solution‐processed flexible zinc‐tin oxide thin‐film transistors on ultra‐thin polyimide substrates

In this letter, solution‐processed flexible zinc‐tin oxide (Z_0.35T_0.65O_1.7) thin‐film transistors with electrochemically oxidized gate insulators (AlOx:Nd) fabricated on ultra‐thin (30 µm) polyimide substrates are presented. The AlOx:Nd insulators exhibited wonderful stability under bending and excellent insulating properties with low leakage current, high dielectric constant, and high breakdown field. The device exhibited a mobility of 3.9 cm²/V · s after annealing at 300 °C. In addition, the flexible device was able to maintain the electricity performance under various degrees of bending, which was attributed to the ultra‐thin polyimide substrate.     

Flexible microelectronics becoming a reality with Suftla transfer technology

Abstract— Suftla is a technology that is used to transfer polycrystalline silicon (polysilicon) thin‐film‐transistor (TFT) circuits from an original glass substrate to a plastic sheet. The electronic devices in the next generation will be thin, lightweight, and will handle huge amounts of data, yet consume less energy. Suftla technology, together with high‐performance polysilicon TFTs, meets all these requirements because we have developed a variety of smart flexible electronic devices, such as thin paperback‐sized displays and microprocessors. Suftla will usher in a new era of life‐enhancing flexible microelectronics.     

Current status and future prospect of in‐cell‐polarizer technology

Abstract— A thin‐crystalline‐film (TCF) polarizer has been developed which can be used internally in liquid‐crystal‐display cells. Based on this material, a manufacturing process has been developed for the fabrication of monochrome LCDs with internal polarizers. A new TCF polarizer material and coating equipment, developed to realize a high‐performance color TFT‐LCD, are discussed.     

In‐pixel temperature sensor for high‐luminance active matrix micro‐light‐emitting diode display using low‐temperature polycrystalline silicon and oxide thin‐film‐transistors

We propose an in‐pixel temperature sensor using low‐temperature polycrystalline silicon and oxide (LTPO) thin‐film transistor (TFTs) for high‐luminance active matrix (AM) micro‐light‐emitting diode (LED) displays. By taking advantage of the different off‐current characteristics of p‐type LTPS TFTs and n‐type a‐IGZO TFTs under temperature change, we designed and fabricated a temperature sensor consists of only LTPO TFTs without additional sensing component or material. The fabricated sensor exhibits excellent temperature sensitivity of up to 71.8 mV/°C. In addition, a 64 × 64 temperature sensor array with 3T sensing pixel and integrated gate driver has also been fabricated, which demonstrates potential approach for maxing out the performance of high‐luminance AM micro‐LED display with real‐time in‐pixel temperature monitoring.     

A miniature coupled‐line‐based 3‐dB directional coupler using GaAs PHEMT process

A novel complementary‐conducting‐strip (CCS) coupled‐line (CL) design is proposed to achieve compact size by applying two‐dimensional layout and standard gallium‐arsenide (GaAs) thin‐film technology. To obtain high coupling and satisfy the design rules of GaAs process, mixed‐couple mechanism with edge and broadside coupling are also used. A CCS CL‐based Ka‐band 3‐dB directional coupler is fabricated using WIN 0.15‐μm GaAs pseudomorphic high electron mobility transistor technology. Experimental results show that the proposed directional coupler can cover the entire Ka‐band (26–40 GHz) with through and coupling of approximately 3.7 ± 0.25 dB, and isolation of better than 13 dB. In addition, the phase difference between the two output ports is approximately 90° ± 5°. The occupied area of the prototype (without I/O networks) is only 220 × 220 μm². © 2015 Wiley Periodicals, Inc. Int J RF and Microwave CAE 26:21–26, 2016.     

A 470 × 235‐ppi poly‐Si TFT‐LCD for high‐resolution 2‐D and 3‐D autostereoscopic displays

Abstract— We have developed a 470 × 235‐ppi poly‐Si TFT‐LCD with a novel pixel arrangement, called HDDP (horizontally double‐density pixels), for high‐resolution 2‐D and 3‐D autostereoscopic displays. 3‐D image quality is especially high in a lenticular‐lens‐equipped 3‐D mode because both the horizontal and vertical resolutions are high, and because these resolutions are equal. 3‐D and 2‐D images can be displayed simultaneously in the same picture. In addition, 3‐D images can be displayed anywhere and 2‐D characters can be made to appear at different depths with perfect legibility. No switching of 2‐D/3‐D modes is necessary, and the design's thin and uncomplicated structure makes it especially suitable for mobile terminals.     

Relationship between crystallinity and device characteristics of In‐Sn‐Zn oxide

We have reported that the transistors having the c‐axis‐aligned crystalline (CAAC) In‐Ga‐Zn oxide (IGZO) show good performance. Recently, In‐Sn‐Zn Oxide (ITZO) has attracted much attention because of its high electron mobility, as well as IGZO. However, it has been reported that ITZO field effect transistors (FET) tend to have positive Vth (normally‐on characteristics) and poor reliability compared with IGZO‐FETs. We have reported that high‐performance and high‐reliability OS‐FETs can be fabricated by using CAAC‐IGZO, which has high crystallinity and has no clear grain boundaries, as an active layer. Therefore, we have fabricated CAAC‐ITZO thin films to improve performance of ITZO‐FETs by using CAAC‐ITZO as an active layer. In addition, FETs employing CAAC‐ITZO have better characteristics and reliability than FETs using nano‐crystal ITZO. Furthermore, constant photocurrent method (CPM) measurement was carried out in order to estimate density of deep‐level defect states caused by oxygen vacancies in oxide semiconductors. The results show that CAAC‐ITZO has lower density of deep‐level defect states than nano‐crystal ITZO. We attribute the improvement in reliability of ITZO‐FETs to a decrease in deep‐level defect states of an ITZO active layer, as is the case with IGZO.     

Lightweight electrowetting display on ultra‐thin glass substrate

Mobile display devices that use ultra‐thin (≤100 µm) glass substrates offer a combination of attractive characteristics: lightweight, high quality device fabrication process, thermal and dimensional stability, and mechanical flexibility. Electrowetting (EW) devices fabricated on ultra‐thin glass are demonstrated in this paper. Water contact angle, which is the most critical parameter of EW devices, changes from ~165° to 80° when a 20 V direct current (or alternating current) voltage is applied. EW devices on ultra‐thin glass show negligible hysteresis (~2°) and fast switching time of ~10 ms. EW device operation is maintained when the glass substrate is mechanically flexed. These results indicate the promise of narrow profile EW devices on ultra‐thin glass substrate for mobile and other devices, including video rate flexible electronic paper.     

Flexible active‐matrix OLED displays: Challenges and progress

Abstract— Organic light‐emitting‐device (OLED) devices are very promising candidates for flexible‐display applications because of their organic thin‐film configuration and excellent optical and video performance. Recent progress of flexible‐OLED technologies for high‐performance full‐color active‐matrix OLED (AMOLED) displays will be presented and future challenges will be discussed. Specific focus is placed on technology components, including high‐efficiency phosphorescent OLED technology, substrates and backplanes for flexible displays, transparent compound cathode technology, conformal packaging, and the flexibility testing of these devices. Finally, the latest prototype in collaboration with LG. Phillips LCD, a flexible 4‐in. QVGA full‐color AMOLED built on amorphous‐silicon backplane, will be described.     

The new route for realization of 1‐μm‐pixel‐pitch high‐resolution displays

A new pixel structure for the realization of a 1‐μm‐pixel‐pitch display was developed. This structure, named vertically stacked thin‐film transistor (VST), was based on the conventional back‐channel etched thin‐film transistor (TFT), but all the layers except the horizontal gate line were vertically stacked on the embedded data line, enabling the implementation of high‐resolution display panels. The VST device with a channel length of 1 μm showed a high field effect mobility of more than 50 cm²/Vs and low subthreshold slope of 78 mV per decade. It also shows a high uniform electrical characteristic over the entire 6‐in. wafer. The development of a new pixel architecture is expected to enable the implementation of 1‐μm‐pixel‐pitch high‐resolution displays such as spatial light modulators for digital holograms.     

Direct excitation of xenon by ballistic electrons emitted from nanocrystalline‐silicon planar cathode and vacuum‐ultraviolet light emission

Abstract— To verify the possible use of energetic electrons for direct excitation of inert gas molecules, a nanocrystalline‐silicon (nc‐Si) planar ballistic emitter is operated in a high‐pressure xenon gas ambience. Under the pulse drive, vacuum‐ultraviolet (VUV) light emission is detected without any signs of discharge. The transient behavior of the VUV light emission properly corresponds to that of the nc‐Si emitter. In accordance with quantitative analyses of electron‐emission characteristics and the VUV output, the electron‐to‐photon conversion efficiency reaches 81% in the relatively efficient emitter case. The VUV output power is mainly determined from the number of electrons with energies compatible the with internal excitation of xenon. The emission spectrum observed at a pressure of 10 kPa shows peaks at 152 and 172 nm, which are thought to be originated from metastable Xe²* states. In contrast to the case of conventional impact ionization, no near‐infrared (NIR) peaks are seen in the spectrum. These results strongly suggest that the incidence of energetic electrons causes direct excitation of xenon molecules followed by radiative relaxation through intermediate states. The generated VUV light can be easily converted to visible light using a phosphor screen. As a discharge‐free VUV light emission, this phenomenon is potentially applicable to mercury‐free, high‐efficacy, and high‐stability flat‐panel light‐emitting device.     

Evaluation of thin‐film photodevices and application to an artificial retina

Abstract— First, conventional poly‐Si thin‐film photodevices, p‐i‐n thin‐film photodiodes (TFPDs) and p‐n TFPDs, were evaluated. It was found that the photo‐induced current (Iphoto) is not simultaneously relatively high and independent of the applied voltage (Vapply). Next, a novel poly‐Si thin‐film photodevice, p‐i‐n thin‐film phototransistor (TFPT), is proposed. It is found that the Iphoto is simultaneously relatively high and independent of the Vapply because the depletion layer is formed in the entire intrinsic region and the electric field is always high. These characteristics are preferable for photosensor applications. Finally, the p‐i‐n TFPT was applied to an artificial retina. The photo‐illuminance profile is correctly detected and the output voltage profile is correspondingly outputted. This artificial retina is expected to be suitable for human beings because it can potentially be fabricated on a flexible, harmless, plastic, and organic substrate.