Optical-fiber distributed temperature sensor: design and realization

Through analyzing theoretically the temperature effect of the optical-fiber Raman backscattering, a distributed temperature sensor is designed based on the single-mode fiber. Demodulation methods of temperature transduction are compared, and then the demodulation method using the ratio of the anti-Stokes and the Stokes Raman backscattering intensity is adopted. Both the hardware composition and the software realization of the system are introduced in detail. The experiment shows that the distinguishing ability of the temperature and that of the space are 1℃ and 2 m, respectively, and that the system response time is about 180 s with a sensing range of 5 km and with a temperature measurement range of 0-100℃.     

The long range distributed fiber raman photon temperatree sensor

A 31 km long range distributed optical fiber Raman photon temperature sensor （DOFRPTS） system have been developed based on temperature effect of the amplified spontaneous Raman scattering in fiber, and using fiber laser as a pumped some. The results show that temperature measuring uncertainty is±2 ℃, temperature resolution is 0.1℃, measurement time is 432 s, spatial resolution is less than 4 m.     

Thermal analysis of LED lighting system with different fin heat sinks

This paper designs a 3 × 3 light emitting diode (LED) array with a total power of 9 W, presents a thermal analysis of plate fin, in-line and staggered pin fin heat sinks for a high power LED lighting system, and develops a 3D one-fourth finite element (FE) model to predict the system temperature distribution. Three kinds of heat sinks are compared under the same conditions. It is found that LED chip junction temperature is 48.978 ℃ when the fins of heat sink are aligned alternately.     

Thermal analysis of LED lighting system with different fin heat sinks

This paper designs a 3×3 light emitting diode(LED) array with a total power of 9 W,presents a thermal analysis of plate fin,in-line and staggered pin fin heat sinks for a high power LED lighting system,and develops a 3D one-fourth finite element(FE) model to predict the system temperature distribution.Three kinds of heat sinks are compared under the same conditions.It is found that LED chip junction temperature is 48.978℃when the fins of heat sink are aligned alternately.     

Ruby (Al_2O_3∶Cr~(3+)) Fluorescence Thermometer Using PLD-PMSR Technique

A kind of fluorescence fiber-optic thermometer is devised based on the solid-state ruby fluorescence material. The characteristics of fluorescence material absorption and emission are analyzed, and the fiber-optic temperature measurement probe in ruby is developed. This system is particularly adaptable to the temperature measurement in the range of 20℃ to 600℃. During the experiment, this method is proved to be useful to temperature measurement with high resolution and precision.     

Ruby （Al2O3： Cr^3＋） Fluorescence Thermometer Using PLD-PMSR Technique

A kind of fluorescence fiber-optic thermometer is devised based on the solid-state ruby fluorescence material. The characteristics of fluorescence material absorption and emission are analyzed, and the fiber-optic temperature measurement probe in ruby is developed. This system is particularly adaptable to the temperature measurement in the range of 20 ℃ to 600 ℃. During the experiment, this method is proved to be useful to temperature measurement with high resolution and precision.     

Preparation of Vanadium Dioxide Films for Protection from High—energy Laser Hits

Vanadium dioxide(VO2) thin films are used for protection from high-energy laser hits due to their semiconductor-to-metal phase transition experienced during heating at temperature of approximately 68℃,which followed by a abrupt change of optical behavior,namely from transparent semiconductor state below 68℃ to highly reflective metallic state beyond 68℃.The preparation and properties of the films are described as well as the primary principle of the device for protection from high energy laser hits.An ion-beam-sputtering system is used to deposit VO2 thin films.The technique is reactive ion beam sputtering of vanadium at temperature of 200℃ on Si,Ge and Si3N4 substrates in a well controlled atmosphere of argon with a partial pressure of O2,followed by a post annealing at 400-550℃ with argon gas.The optical transmittance changes from 60% to 4% are obtained within the temperature range from 50℃ to 70℃ .X-ray diffraction(XRD) shows that the films are of single-phase VO2.     

The long range distributed fiber raman photon temperature sensor

A 31 km long range distributed optical fiber Raman photon temperature sensor (DOFRPTS) system have been developed based on temperature effect of the amplified spontaneous Raman scattering in fiber, and using fiber laser as a pumped source. The results show that temperature measuring uncertainty is ±2 °C, temperature resolution is 0.1 °C, measurement time is 432 s, spatial resolution is less than 4 m.     

Passive location using CDMA mobile communication system based on repeater equipment

To overcome the drawback of a short operation range and low-resolution of a passive location system using a civil communication signal, the new idea that utilizes code division multiple access （CDMA） signal and repeater is disposed off. First, the CDMA passive location model and observation function are given, and the error source and error range are analyzed. Subsequently, the CDMA passive location algorithm in a repeater environment is described and simulated. The simulation result shows that the algorithm can provide the location value with high accuracy.     

压力下应变闪锌矿(111)取向GaN/AlGaN异质结中界面极化子的温度效应

The properties of interface polarons in a strained （111）-oriented zinc-blende GaN/AlxGa1-xN heterojunction at finite temperature under hydrostatic pressure are investigated by adopting a modified LLP variational method and a simplified coherent potential approximation. Considering the effect of hydrostatic pressure on the bulk longitudinal optical phonon mode, two branches interface-optical phonon modes and strain, respectively, we calculated the polaronic self-trapping energy and effective mass as functions of temperature, pressure and areal electron density. The numerical result shows that both of them near linearly increase with pressure but the self-trapping energies are nonlinear monotone increasing with increasing of the areal electron density. They are near constants below a range of temperature whereas decrease dramatically with increasing temperature beyond the range. The contributions from the bulk longitudinal optical phonon mode and one branch of interface optical phonon mode with higher frequency are important whereas the contribution from another branch of interface optical phonon mode with lower frequency is extremely small so that it can be neglected in the further discussion.     

High-sensitivity temperature sensor based on long-period fiber grating

Temperature sensitivity is greatly improved by taking the following three measures： proper long-period fiber grating （LPFG） whose strain coefficient of the core is larger than that of the cladding is employed, the LPFG is coated with a thin film of the material whose refractive index decreases with the temperature, and the sensor is encapsulated by metal material whose thermal expansion coefficient is large. By computer simulation, a measured temperature coefficient of 0.2375 nm/℃ and a temperature resolution less than 0.1 ℃ are obtained.     

A Nonlinear Mirror Structure to Improve the Performance of the Distributed Fiber Temperature Sensor Based on Raman Backscattering

A novel nonlinear mirror structure which can increase the optical signal-to-noise ratio of a distributed fiber Raman temperature sensor is proposed, and 6 dB improvement of the optical signal-to-noise ratio is obtained. With the assistance of the nonlinear mirror, we demonstrate that the spatial resolution of the sensor is improved from 3 m to 1 m, and the temperature accuracy is improved from ±0.6℃ to ±0.2℃. The theoretical analysis and the experimental data are in good agreement.     

Measurement of a Three-dimensional Gas Temperature Fidld with Holographic Interferometry

It is well known that optical tomography can accurately and quantitatively re-construct the refractive index field of a transparent medium and display the three dimensional image of other thysical quantities relevant to temperature or density.In this paper.a new multidirectional holographic interferometric system is built,and two kinds of image tecon-struction algoritma are introduced and an automatic image processing system of interfero-gram is designed.A three dimentsional asymmetric gad flow field above a combustor is experi-mentally investigated with holographic interferormetry.The reconstructed temperatures are similar to those measured with a thermocouple.     

Growth-temperature-dependent optical and acetone detection properties of ZnO thin films

Zinc oxide (ZnO) thin films were prepared onto glass substrates at moderately low growth temperature by two-stage spray pyrolysis technique. The effects of growth temperature on structural, optical and acetone detection properties were investigated with X-ray diffractometry, a UV-visible spectrophotometer, photoluminescence (PL) spectroscopy and a homemade gas sensor testing unit, respectively. All the films are polycrystalline with a hexagonal wurtzite phase and exhibit a preferential orientation along [002] direction. The film crystallinity is gradually enhanced with an increase in growth temperature. The optical measurements show that all the films are physically highly transparent with a transmittance greater than 82% in the visible range. The band gap of the film is observed to exhibit a slight red shift with an increasing growth temperature. The PL studies on the films show UV/violet PL band at ～ 395 nm. Among all the films investigated, the film deposited at 250 ℃ demonstrates a maximum sensitivity of 13% towards 20 ppm of acetone vapors at 300 ℃ operating temperature.     

An improved temperature-dependent large signal model of microwave GaN HEMTs

Accurate modeling of the electrothermal effects of GaN electronic devices is critical for reliability design and assessment. In this paper, an improved temperature-dependent model for large signal equivalent circuit modeling of GaN HEMTs is proposed. To accurately describe the thermal effects, a modified nonlinear thermal sub-circuit which is related not only to power dissipation, but also ambient temperature is used to calculate the variations of channel temperature of the device; the temperature-dependent parasitic and intrinsic elements are also taken into account in this model. The parameters of the thermal sub-circuit are extracted by using the numerical finite element method. The results show that better performance can be achieved by using the proposed large signal model in the range of -55 to 125℃ compared with the conventional model with a linear thermal sub-circuit.     

Theoretical Analysis of Gain and Threshold Current Density for Long Wavelength GaAs-Based Quantum-Dot Lasers

Quantum dot gain spectra based on harmonic oscillator model are calculated including and excluding excitons.The effects of non-equilibrium distributions are considered at low temperatures.The variations of threshold current density in a wide temperature range are analyzed and the negative characteristic temperature and oscillatory characteristic temperature appearing in that temperature range are discussed.Also,the improvement of quantum dot lasers’ performance is investigated through vertical stacking and p-type doping and the optimal dot density,which corresponds to minimal threshold current density, is calculated.     

基于带隙的具有高稳定性欠压锁存方法

Highly reliable bandgap-based under-voltage-lockout(UVLO) methods are presented in this paper.The proposed under-voltage state to signal conversion methods take full advantages of the high temperature stability characteristics and the enhancement low-voltage protection methods which protect the core circuit from error operation; moreover,a common-source stage amplifier method is introduced to expand the output voltage range.All of these methods are verified in a UVLO circuit fabricated with a 0.5 μm standard BCD process technology.The experimental result shows that the proposed bandgap method exhibits a good temperature coefficient of 20 ppm/℃,which ensures that the UVLO keeps a stable output until the under-voltage state changes.Moreover,at room temperature,the high threshold voltage VTH+ generated by the UVLO is 12.3 V with maximum drift voltage of 80 mV,and the low threshold voltage VTH- is 9.5 V with maximum drift voltage of ±70 mV.Also,the low voltage protection method used in the circuit brings a high reliability when the supply voltage is very low.     

聚光作用下光伏电池阵列性能分析

Performance of concentrating photovoltaic/thermal system is researched by experiment and simulation calculation. The results show that the I-V curve of the GaAs cell array is better than that of crystal silicon solar cell arrays and the exergy produced by 9.51% electrical efficiency of the GaAs solar cell array can reach 68.93% of the photovoltaic/thermal system. So improving the efficiency of solar cell arrays can introduce more exergy and the system value can be upgraded. At the same time, affecting factors of solar cell arrays such as series resistance, temperature and solar irradiance also have been analyzed. The output performance of a solar cell array with lower series resistance is better and the working temperature has a negative impact on the voltage in concentrating light intensity. The output power has a -20 W/V coefficient and so cooling fluid must be used. Both heat energy and electrical power are then obtained with a solar trough concentrating photovoltaic/thermal system.     

Fiber optic displacement sensor used in railway turnout contact monitoring system

Railway turnout contact monitoring is very important in high-speed rail operation systems. In order to measure the distance between the sharp rail and the basic rail in a switch system, a wide-range, high-precision fiber Bragg grating (FBG) displacement sensor was designed. Because the distance between the sharp and basic rails is always greater than 14 cm, the measurement range width and accuracy of the proposed sensor system are ensured through the use of a long spring and a beam of constant strength. A differential compensation method is used to eliminate temperature effects. Test results show that the resolution of the proposed sensor is 0.040 mm and the measuring range is 0—170 mm. A field test was also carried out to evaluate the performance of the sensors.     

Low substrate temperature deposition of transparent and conducting ZnO: Al thin films by RF magnetron sputtering

Transparent and conducting Al-doped ZnO(ZnO:Al) films were prepared on glass substrate using the RF sputtering method at different substrate temperatures from room temperature(RT) to 200 ℃. The structural,morphological, electrical and optical properties of these films were investigated using a variety of characterization techniques such as low angle XRD, Raman spectroscopy, X-ray photoelectron spectroscopy(XPS), field-emission scanning electron microscopy(FE-SEM), Hall measurement and UV–visible spectroscopy. The electrical properties showed that films deposited at RT have the lowest resistivity and it increases with an increase in the substrate temperature whereas carrier mobility and concentration decrease with an increase in substrate temperature. Low angle XRD and Raman spectroscopy analysis reavealed that films are highly crystalline with a hexagonal wurtzite structure and a preferred orientation along the c-axis. The FE-SEM analysis showed that the surface morphology of films is strongly dependent on the substrate temperature. The band gap decreases from 3.36 to 3.29 e V as the substrate temperature is increased from RT to 200 ℃. The fundamental absorption edge in the UV region shifts towards a longer wavelength with an increase in substrate temperature and be attributed to the Burstein-Moss shift. The synthesized films showed an average transmission(> 85%) in the visible region, which signifies that synthesized ZnO:Al films can be suitable for display devices and solar cells as transparent electrodes.