Optical properties of Er-doped SiO2-GeO2-Al2O3 planar waveguide fabricated by sol–gel processes

In this paper, we report silica based planar waveguides doped with Er³⁺, and co-doped with GeO₂ and Al₂O₃. These sol–gel derived planar waveguides were fabricated on SOS (silica on silicon) using multiple spin-coating and rapid thermal processing (RTP). Investigation has been made on their characteristics in terms of their application in optical amplification and lasing, including photoluminescence (PL), fluorescence lifetime, refractive index, propagation loss, surface roughness, Fourier transform infrared (FTIR) spectrum and X-ray diffraction (XRD) analysis. The propagation loss of a 20-layer planar waveguide was measured to be about 1.6 dB/cm for TE₀ and 2.2 dB/cm for TM₀ mode. A strong emission transition (⁴I_13/2→⁴I_15/2) at 1.536 μm with a lifetime of 3.6 ms has been obtained for an optimized molar composition of 90SiO₂: 10GeO₂: 20AlO_1.5: 1ErO_1.5.     

微波强化掺Al-TiO_2改性膨润土的制备及其结构表征

为制备一种新型水处理吸附剂复合材料,在微波作用下,采用掺Al-TiO2作为改性剂制备改性膨润土,考察了最佳微波辐射条件,利用EDS、SEM、FTIR、XRD、N2吸附-脱附和差热热重(DSC-TGA)等手段对样品进行表征。结果表明:辐射功率260 W,辐射时间8min为最佳微波辐射条件;改性膨润土中的改性剂已进入到膨润土层间,与蒙脱石骨架发生成键反应,形成Ti—O—Si键;改性膨润土的层间距由1.280nm增大至1.533nm,比表面积由39.66m2·g-1增大至72.05m2·g-1,孔隙体积由0.103 4cm3·g-1增大至0.140 5cm3·g-1,对亚甲基蓝的饱和吸附量也由32.56g/100g增大至57.96g/100g,且热稳定性较改性前明显提高。     

In situ Fourier transform P-polarized infrared reflection absorption spectroscopic investigation of an interface properties of SiO2/Si(100) deposited using electron cyclotron resonance microwave plasma at room temperature

Amorphous SiO₂ films have been deposited onto the Si substrate, without heating, using sputtering-type electron cyclotron resonance (ECR) microwave plasma. In situ Fourier transform P-polarized infrared reflection absorption spectroscopy (ISFT-PIRRAS) has been used to study the properties of a-SiO₂/Si interface. The results from ISFT-PIRRAS monitoring indicated that the interface stress led to significant distortion in the local structure, which resulted in the broadening of a transverse optical mode (TO₃) located at 1050 cm⁻¹. The interface stress decreased with increased film thickness. In addition, the longitudinal optical phonon mode (LO₃, located at 1223 cm⁻¹) related to TO₃ mode was observed due to Berreman effect [B. Harbecke, Appl. Phys. A: Solids Surf. 38 (1985) 263]. This phonon mode is very sensitive to SiO₂ film thickness, which enables it to be used to detect and characterize ultra thin SiO₂ film. When the film thickness is over 30 nm, a non-linear dependence of the intensity of LO₃ mode on film thickness was observed. However, the TO₃ mode has a near linear dependence on film thickness. Thus, it is more accurate and suitable to detect thick film by monitoring TO₃ mode intensity.     

HMDSO plasma polymerization and thin film optical properties

Thin films were deposited from hexamethyldisiloxane (HMDSO) in a glow discharge supplied with radiofrequency (rf) power. Actino-metric optical emission spectroscopy was used to follow trends in the plasma concentrations of the species SiH (414.2 nm), CH (431.4 nm), CO (520.0 nm), and H (656.3 nm) as a function of the applied rf power (range 5 to 35 W). Transmission infrared spectroscopy (IRS) was employed to characterize the molecular structure of the polymer, showing the presence of Si-H, Si-O-Si, Si-O-C and C-H groups. The deposition rate, determined by optical interferometry, ranged from 60 to 130 nm/min. Optical properties were determined from transmission ultra violet-visible spectroscopy (UVS) data. The absorption coefficient , the refractive index n, and the optical gap E₀₄ of the polymer films were calculated as a function of the applied power. The refractive index at a photon energy of 1 eV varied from 1.45 to 1.55, depending on the rf power used for the deposition. The absorption coefficient showed an absorption edge similar to other non-crystalline materials, amorphous hydrogenated carbon, and semiconductors. For our samples, we define as an optical gap, the photon energy E₀₄ corresponding to the energy at an absorption of 10⁴ cm⁻¹. The values of E₀₄ decreased from 5.3 to 4.6 as the rf power was increased from 5 to 35 W.     

Plasma based cross-field particle acceleration with high power microwave

Electron acceleration based on the V_p × B acceleration (or the cross-field acceleration) scheme, which has a static magnetic field across the wave propagation direction, is reviewed, specifically the electron linear accelerator using a transverse mode of an EMW is introduced. Penetration and ducting of an intense microwave into overdense plasma are discussed, which show an experimental simulation and precise understanding of the concept of an optical guiding in the laser wakefield accelerator. Coherent radiation of ultrashort microwave pulse by DC-AC radiation conversion scheme has been demonstrated with use of CO₂ laser and array of capacitors. This scheme is based on the mechanism of photon acceleration.     

Low threshold, diode end-pumped Nd:GdVO4 self-Raman laser

Low threshold, high efficient Raman laser output has been realized from a compact, diode end-pumped, self-stimulating Nd³⁺:GdVO₄ Raman laser. Maximum Raman output power of 100 mW was achieved at a pulse repetition frequency (PRF) of 10 kHz with 1.8 W pump power. The optical efficiency is 5.6% from diode to Raman laser and the slope efficiency is 8%. The lowest threshold for the SRS process is only 400 mW at a PRF of 5 kHz. By generating second harmonics using a LBO crystal, 3 mW 588 nm yellow laser was also produced. A strong blue emission was observed in the Nd³⁺:GdVO₄ crystal when the Raman laser output, we contribute this for the upconversion of the Nd³⁺ in the crystal.     

Dependence of the a-Si:H defect density of states on the magnetic field profile of an electron cyclotron resonance microwave plasma

The magnetic field profile of an electron cyclotron resonance microwave plasma was systematically altered to determine subsequent effects on a-Si:H film quality. The mobility gap deep density N_D deposition rate and light-to-dark conductivity were determined for the a-Si:H films. By variation of the magnetic field profile N_D could be altered by more than an order of magnitude, from 1 × 10¹⁶ to 1 × 10¹⁷ cm⁻³ at 0.7 mTorr and 1 × 10¹⁶ to 5 × 10¹⁷ cm⁻³ at 5 mTorr as determined by junction capacitance techniques. Two deposition regimes were found to occur for the conditions of this study. Highly divergent magnetic fields resulted in poor quality a-Si:H, while for magnetic field profiles defining a more highly confined plasma, the a-Si:H was of device quality and relatively independent of the magnetic field configuration. The data is interpreted as a consequence of silane depletion for highly divergent magnetic field profiles.     

Improved Wireless, Transcutaneous Power Transmission for In Vivo Applications

Electric power, sufficient for many in vivo applications, can be transmitted wirelessly from a small external solenoid (filled with a soft magnetic core), to a novel, magnetoelectric (ME) receiver a few centimeter (cm) inside the body. The ME receiver is a sandwich of electroactive (e.g., piezoelectric) material bonded between two magnetostrictive layers. The electroactive layer may be poled in its plane so that it can function in the stronger g₃₃ mode (induced voltage parallel to the direction of principal magnetostrictive stress). Preliminary experimental results indicate that a 7 cm long ferrite-filled solenoid (NI ap 122 Amp-turns) producing an RMS magnetic field of order 1600 A/m (20 Oe) at the ME receiver (of volume 0.1 cm³) 3 cm from the field source, generates in the ME receiver a power of 200 mW (2 W/cm³). The receiver, in turn, generates a power of 160 mW.     

Influence of rf-power on the plasma carbonitriding of titanium

The present work reports on the effect of input plasma processing power in the range of 350–650 W on the microstructure and mechanical properties of plasma nitrided Ti. The plasma processing time was 20 min and a gas mixture of 15% C₂H₂ and 85% N₂ was used. The characteristics of the carbonitrided layer have been investigated by microhardness measurements, surface roughness measurements, optical microscopy, and X-ray diffraction. The measured surface hardness values of the compound layer shows a maximum of 2050 HV0.1 for the sample treated at a plasma power of 550 W. The thickness of the carbonitrided layer continuously increases as the plasma power increases. Moreover, the highest carbonitriding rate of 3.52 μm²/s was observed when the input plasma power was adjusted at 600 W. This high carbonitriding rate of treated titanium samples is ascribed to the high concentration of active carbon and nitrogen species in the plasma atmosphere and the formed microcracks in the near surface of the sample during the plasma processing.     

高功率激光照明用Al2O3-YAG:Ce复相陶瓷荧光体的组分设计与性能优化

结合蓝色激光二极管和黄色荧光转换器制备的固态激光照明引起了人们极大的关注, 但荧光转换材料的热猝灭效应显著影响了高功率激光照明的实现。通过组分设计和性能优化可以提高荧光转换器的热导率和发光均匀性。本工作采用固相反应烧结技术制备了一系列不同Al₂O₃含量的Al₂O₃-YAG:Ce复相陶瓷荧光体, 研究了Al₂O₃含量对Al₂O₃-YAG:Ce陶瓷荧光体微观结构、相组成、光学性能和热学性能的影响。Al₂O₃-YAG:Ce陶瓷荧光体在800 nm处的总透过率随着Al₂O₃含量的增加(0→90%)而下降(82.6%→23.6%)。Al₂O₃-YAG:Ce陶瓷荧光体的激发和发射强度随Al₂O₃含量的增加先增大后减小。当Al₂O₃/Al₂O₃-YAG:Ce的质量比为70%时, 陶瓷荧光体在室温下的热导率高达25.7 W·m^-1·K^-1, 且表现出最高的发射强度。当采用功率密度为20 W·mm^-2的蓝光二极管泵浦 70% Al₂O₃-YAG:Ce复相陶瓷荧光体时, 可获得3724 lm的高光通量和239.4 lm·W^-1的高流明效率。此外, 当功率密度从1 W·mm^-2增大到20 W·mm^-2时, 流明效率仅下降10.5%, 光通量持续增加且未出现发光饱和。上述结果显示, Al₂O₃-YAG:Ce复相陶瓷荧光体具有良好的发光效率和热稳定性, 将在高功率激光照明中具有广阔的应用前景。     

Optimization of magnetic field configuration for the production of Ar ions from RIKEN 18 GHz ECR ion source

We successfully extracted a 1.9 mAAr⁸⁺ ion beam and a 1 mAAr⁹⁺ ion beam from the RIKEN 18 GHz ECR ion source at the extraction voltage of 17 kV and the microwave power of 700–800 W. To obtain these intensities, we optimized the magnetic field configuration and the plasma electrode position.     

共沉淀纳米粉体制备Yb:CaF2激光陶瓷及其性能研究

利用共沉淀法合成的粉体, 通过真空烧结结合热压烧结后处理制备了掺镱的氟化钙透明陶瓷(Yb:CaF₂)。在600 ℃预烧1 h, 700 ℃热压烧结2 h制备的5at%Yb:CaF₂透明陶瓷在1200 nm处的直线透射率达到92.0%。对陶瓷的显微结构、光谱特性和激光性能进行了测试和讨论。研究结果表明, 陶瓷样品的显微结构均匀, 平均晶粒尺寸为360 nm。此外, 计算得到Yb:CaF₂陶瓷在977 nm处的吸收截面和1030 nm处的发射截面分别为0.39×10 ^-20和0.26×10 ^-20cm ²。最后, 对Yb:CaF₂陶瓷激光性能进行了表征, 得到最大输出功率为0.9 W, 最大斜率效率为23.6%。     

Correlation between optical emission spectra and the process parameters of a 915 MHz microwave plasma CVD reactor used for depositing polycrystalline diamond coatings

In this paper, the hydrogen and hydrogen-methane mixed plasma have been generated inside a 33 cm diameter quartz bell jar with a low power (9 KW) and lower frequency 915 MHz microwave plasma chemical vapor deposition system. The reactor is being used for growing polycrystalline diamond (PCD) over large area (100 mm). The generated plasma is diagnosed by in situ optical emission spectroscopy method with wave length ranging from 200 to 900 nm. The effects of microwave power, chamber pressure and gas concentration on plasma characteristics have been studied in this work. Within the optical range, Balmer H _α , H _β , C₂swan band and CH lines have been detected at the wavelengths of 655.95, 485.7, 515.82 and 430.17 nm, respectively. It has been observed that for hydrogen plasma, the amount of transition from hydrogen atom inner shell 3 to 2 (H _α ) is almost constant with increasing microwave (MW) power (from 2000 to 2800 W) and pressure (from 15 to 30 Torr) initially, after that it increases with further increase of MW power and pressure, whereas, the transition from 4 to 2 (H _β ) is slowly increased with increasing MW power and pressure. For hydrogen-methane plasma, intensities of C₂ swan band, i.e., the transitions from D³π _g to A³π _μ energy levels, are also increased with the increasing microwave power and reactor pressure. It has been observed that the radicals present in the plasma are affected by variation of different reactor parameters like pressure, MW power, CH₄ concentration, etc.     

Linear and nonlinear optical response of bismuth and antimony implanted fused silica: annealing effects

We report the linear and nonlinear optical response of bismuth and antimony implanted fused silica with doses of 6 × 10¹⁶ ions/cm². The nonlinear refractive index, n₂, was measured using a Z-scan technique with a mode locked Ti:sapphire laser operating in 140 fs pulse duration at 770 nm wavelength. It is found that the nonlinear refractive index n₂ of as-implanted samples is large, in the order of 10⁻¹⁰ cm²/W and the n₂ value of Bi as-implanted sample is about 2.4 times lager than that of Sb as-implanted sample. The large n₂ response is attributed to the presence of nanosized metal particles in the implanted layer observed by transmission electron microscopy. We also report the changes of linear and nonlinear optical response when implanted samples were subsequently annealed at temperatures from 500 to 1000 C in argon and oxygen atmospheres. The annealing effect on optical properties is found to be strongly dependent on the annealing atmospheres. Our results indicate that annealing treatment in O₂ affects the local environment of the implanted metal ions and hence the linear and nonlinear optical properties of the metal-dielectric composite. We suggest that a new phase of metal-oxygen-silicate was formed during annealing in O₂ atmosphere.     

Effects of microwave on drug release property of poly(methyl vinyl ether-co-maleic acid) matrix

The drug release behavior of beads made of poly(methyl vinyl ether-co-maleic acid) was investigated with respect to the influence of microwave irradiation. The beads were prepared by an extrusion method with sodium diclofenac as a model water-soluble drug. The beads were subjected to microwave irradiation at 80 W for 5 and 20 min, and at 300 W for 1 min 20 s and 5 min 20 s. The profiles of drug dissolution, drug content, drug-polymer interaction, and polymer-polymer interaction were determined by using dissolution testing, drug content assay, differential scanning calorimetry, and Fourier transform infra-red spectroscopy. Keeping the level of supplied irradiation energy identical, treatment of beads by microwave at varying intensities of irradiation did not bring about similar drug release profiles. The extent and rate of drug released from beads were markedly enhanced through treating the samples by microwave at 80 W as a result of loss of polymer-polymer interaction via the (CH₂)_n moiety, but decreased upon treating the beads by microwave at 300 W following polymer-polymer interaction via the O-H, COOH, and COO^- moieties as well as drug-polymer interaction via the N-H, O-H, COO^-, and C-O moieties. The beads treated by microwave at 300 W exhibited a higher level of drug release retardation capacity than those that were treated by microwave at 80 W in spite of polymer-polymer interaction via the (CH₂)_n moiety was similarly reduced in the matrix. The mechanism of drug release of both microwave-treated and untreated beads tended to follow zero order kinetics. The drug release was markedly governed by the state of polymer relaxation of the matrix and was in turn affected by the state of polymer-polymer and/or drug-polymer interaction in beads.     

Effect of the microwave oven on structural, morphological and electrical properties of SrBi4Ti4O15 thin films grown on Pt/Ti/SiO2/Si substrates by a soft chemical method

Thin films of SrBi₄Ti₄O₁₅ (SBTi), a prototype of the Bi-layered-ferroelectric oxide family, were obtained by a soft chemical method and crystallized in a domestic microwave oven. For comparison, films were also crystallized in a conventional method at 700 °C for 2 h. Structural and morphological characterization of the SBTi thin films were investigated by X-ray diffraction (XRD) and atomic force microscopy (AFM), respectively. Using platinum coated silicon substrates, the ferroelectric properties of the films were determined. Remanent polarization P_r and a coercive field E_c values of 5.1 μC/cm² and 135 kV/cm for the film thermally treated in the microwave oven and 5.4 μC/cm² and 85 kV/cm for the film thermally treated in conventional furnace were found. The films thermally treated in the conventional furnace exhibited excellent fatigue-free characteristics up to 10¹⁰ switching cycles indicating that SBTi thin films are a promising material for use in non-volatile memories.     

Sr掺杂对12CaO·7Al2O3电子化合物电输运及发射性能的影响

12CaO·7Al₂O₃电子化合物(C12A7:e ^-)是一种具有低工作温度和低逸出功等优点的新型电子化合物阴极材料。通过高温固相反应结合放电等离子烧结制备Sr掺杂(Ca_1-xSr_x)12A7 (0≤x≤0.05)块体, 并在1100 ℃采用Ti颗粒还原20 h成功制得电子化合物(Ca_1-xSr_x)12A7:e ^-。第一性原理计算结果表明, (Ca_1-xSr_x)12A7:e ^-与C12A7:e ^-相比, 框架导带下移, 费米能级附近态密度增加, 这将有利于电输运和发射性能的优化。室温电输运测试结果表明, Sr掺杂有利于C12A7:e ^-电输运性能的优化, 其中(Ca_0.96Sr_0.04)12A7:e ^-样品在室温下具有最高电导率(1136 S/cm)以及最高载流子浓度(2.13×10 ²¹ cm ^-3), 与相同条件下制备的C12A7:e ^-样品相比, 载流子浓度提高近2个数量级, 表明Sr掺杂可以有效缩短制备C12A7:e ^-的制备时间。热电子发射性能测试结果表明, 随着Sr掺杂量的增加, 热电子发射性能逐渐提高, 其中(Ca_0.96Sr_0.04)12A7:e ^-样品具有最佳的热发射性能, 在1100 ℃外加电压3500 V时, 发射电流密度达到1.45 A/cm ², 零场发射电流密度达到0.74 A/cm ², 理查生逸出功降低至1.86 eV。     

Fabrication and Characterization of Potassium Ion-Selective Electrode Based on Porous Silicon

Porous-silicon (PS)-based potassium ion-selective microelectrode (K⁺ISME) was fabricated by using a microelectronic planar process and an electrochemical anodization etching technique. The apparent sensing area of the K⁺ISME is 100times100 mum ². The response time t_95% is 20 and 31 s when the concentration change is from low to high and vice versa, respectively. The potentials are constant at pH 2-8. The calibration curve for the K ⁺ISME is linear within a wide range of pK=2.0~6.0. Its average slope during six months is 56.5 mV per decade, which is close to the Nernst response. The detection limit was found to be on the order of 5times10^-7 M. The potentiometric selectivity coefficients (K_i,j ^pot) of the K⁺ ISE were 1.8 for NH ₄ ⁺, 3.6 for Li⁺, 4.1 for Na⁺, 4.5 for Mg²⁺, and 4.8 for Ca²⁺, respectively. Good performances of the K⁺ISME are attributed to large specific surface area and excellent adhesion between sensing membrane and the surface of PS     

聚苯醚/钙镧钛微波复合基板

微波复合基板兼具树脂基体的高韧性和陶瓷填料优异的介电和热学性能, 是航空航天、电子对抗、5G通讯等领域的关键材料。本工作采用螺杆造粒与注塑成型相结合的新技术制备了聚苯醚(简写为PPO)为基体、钙镧钛(Ca_0.7La_0.2TiO₃, 简写为CLT)陶瓷为填料的新型微波复合基板, 并对基板的显微结构、微波介电性能、热学性能和力学性能进行表征。结果表明, 采用这种新技术制备的微波复合基板组成均匀且结构致密。随着CLT陶瓷的体积分数从0增大至50%, 基板的介电常数从2.65提高到12.81, 介电损耗从3.5×10 ^-3降低至2.0×10 ^-3 (@10GHz); 同时热膨胀系数从7.64×10 ^-5 ℃ ^-1显著降低至1.49×10 ^-5 ℃ ^-1, 热导率从0.19 W·m ^-1·K ^-1提高至0.55 W·m ^-1·K ^-1; 此外抗弯强度从97.9 MPa提高至128.7 MPa。填充体积分数40%CLT陶瓷的复合基板综合性能优异: ε_r=10.27, tanδ=2.0×10 ^-3(@10GHz), α=2.91×10 ^-5 ℃ ^-1, λ=0.47 W·m ^-1·K ^-1, σ_s=128.7 MPa, 在航空航天、电子对抗、5G通讯等领域具有良好的应用前景。     

Cavity perturbation technique for the measurement of permittivitytensor of uniaxially anisotropic dielectrics

Based on microwave resonant perturbation theory, a bimodal TE₁₁₂ cylindrical cavity is developed for the measurement of permittivity tensor of uniaxially anisotropic dielectrics. The two perpendicular TE₁₁₂ degenerate modes in the cavity are used to measure the two complex components in the permittivity tensor of a uniaxial sample, respectively. In the measurement of each component, only the corresponding mode resonates in the bimodal cavity, and the real and imaginary parts of the complex component are deduced from the changes of the resonant frequency and the quality factor of the cavity due to sample insertion. In the present technique, the quality factors of the cavity before and after sample insertion are measured at the same frequency, so the uncertainties caused by the variation of the total stored energy in the cavity due to sample insertion are eliminated. Experimental results show that the present technique is accurate and reliable for the measurement of the permittivity tensor of uniaxial media. As an example, the dielectric properties of α-SiO₂ samples with different crystal orientations are characterized using the present technique