Microbeam line with 1.5 MeV helium ions and protons at Osaka

A microprobe for Rutherford backscattering (RBS) and particle-induced X-ray emission (PIXE) measurements has been realized by focusing 1.5 MeV helium-ion or proton beams with a demagnification system consisting of piezo-driven objective slits and a magnetic quadrupole doublet. Minimum beam spot sizes of 1.3 × 2.2 μm² for helium ions and 2.2 × 4.0 μm² for protons have been achieved. The factors which may limit the minimum spot size are discussed using a Monte Carlo simulation procedure. Rutherford backscattering image mapping of 3-dimensional structures is demonstrated.     

The performance of the Ljubljana ion microprobe

In August 2000 the setup of the Ljubljana ion microprobe, based on OM 150 triplet, has been completed. The beam line is installed at the 10° exit port of the 2 MeV Tandetron accelerator. It is equipped with motor driven slits, a precise five-axis goniometer and a spherically shaped measuring chamber with detectors for PIXE, PIGE, PESA, SE and RBS. In order to understand the beam optics along the complete system, consisting of the tandem accelerator and the beam line optical elements, an interactive computer code, based on a linear approximation, has been developed. The program is used both to determine the optimal parameters of the tandem focusing system in its daily use and to develop new beam line configurations. Test measurements performed on a copper grid yielded a spatial resolution of 1.0×1.5 μm² in the high current mode (30–100 pA) and 0.5×0.9 μm² in low current mode (10⁴ counts/s). First analytical results confirmed excellent performance of the new Ljubljana ion microprobe.     

The thermal conductivity of UO2 vapor

The thermal conductivity, λ of a saturated vapor over UO_1.96 is calculated in the temperature range 3000–6000 K. The calculation shows that the contribution to λ from the transport of reaction enthalpy dominates all other contributions. All possible reactions of the gaseous species UO₃, UO₂, UO, U, O, and O₂ are included in the calculation. We fit the total thermal conductivity to the empirical equation λ = exp(a+ b/T+cT+dT² + eT³), with λ in cal/(cm s K), T in kelvins, a = 268.90, B = − 3.1919 × 10⁵, C = −8.9673 × 10⁻², d = 1.2861 × 10⁻⁵, and E = −6.7917 × 10⁻¹⁰.     

Pumping experiment of water on B and LaB6 films with an electron beam evaporator

The pumping characteristic of water vapor on boron and lanthanum hexaboride films formed with an electron beam evaporator have been investigated in high vacuum between 10⁻⁴ and 10⁻³ Pa. The measured initial maximum pumping speeds of water for the fresh B or LaB₆ films with a deposition amount from 2.3 × 10²¹ to 6.7× 10²¹ molecules/m² separately formed on a substrate are 3.2–4.9 m³/sm², and the saturation values of adsorbed water on these films are 2.1 ×10²⁰−1.3 × 10²¹ H₂O molecules/m².     

Microanalysis of a submicron patterned WSix structure using a nuclear microprobe

A metal-silicide wiring structure with submicron lateral feature size was analyzed successfully by a nuclear microprobe with a Liquid Metal Ion Source (LMIS). A minimum beam spot size of less than 80 nm at a current of 30 pA with a 300 keV Be²⁺ beam was used. The lateral distribution of WSi_x at submicron level was resolved using RBS mapping and tomographic imaging. The localized silicidation behavior between WSi_x on Si and on SiO₂ was compared by microbeam RBS measurement.     

Analysis of wall conditioning by using plasma impact desorption in the tandem mirror GAMMA 10

A method for evaluating wall condition by using plasma impact desorption (PID) technique has been developed and successfully applied to the tandem mirror GAMMA 10 as a monitor for wall conditioning. A magnetically shielded quadrupole mass spectrometer was installed in the vacuum chamber of the GAMMA 10 central cell. The behaviour of the partial pressure of various gas molecules desorbed by ICRF-heated plasma discharges were analyzed. The predominant increase of the partial pressure due to PID (ΔP_PID) was hydrogen (M = 2) and a small amount of impurity as CO (M = 28), CH₃ (M = 15), H₂O (M = 18) and CO₂ (M = 44) was observed in the wall-conditioning discharges. The reduction of hydrogen pressure as well as ΔP_PID of the above impurities was observed with the progress of wall conditioning. This behavior has a good correlation with the increase of partial pressures due to electron-impact desorption measured at the same period. The relation between ΔP_PID and the charge-exchange flux was investigated.     

Development of enhanced depth-resolution technique for shallow dopant profiles

A rapid shrinkage in the minimum feature size of integrated circuits requires analysis of dopants in their shallow source–drain and their extensions with an enhanced depth resolution. Rutherford backscattering spectroscopy (RBS) combining a medium-energy He ion beam with a detector of improved energy resolution should meet the requirement of a depth resolution better than 5 nm at a depth of 10–20 nm in the next 10 years. A toroidal electrostatic analyzer of 4×10⁻³ energy resolution has been used to detect the scattered ions of a medium-energy He ion beam. Five keV As⁺ implanted Si or SiO₂ samples were measured. Depth profiling results using the above technique are compared with those of glancing-angle RBS by MeV energy He ions. Limitations in the energy resolution due to various energy-spread contributions have been clarified.     

Investigation of in-reactor creep and irradiation growth of zirconium-2.5 wt% niobium channel tubes

We summarize the diametral creep results obtained in the MR reactor of the Kurchatov Institute of Atomic Energy on zirconium-2.5 wt% niobium pressure tubes of the type used in RBMK-1000 power reactors. The experiments that lasted up to 30 000 h cover a temperature range of 270 to 350°C, neutron fluxes between 0.6 and 4.0 ×10¹³ n/cm² · s (E > 1 MeV) and stresses of up to 16 kgf/mm². Diametral strains of up to 4.8% have been measured. In-reactor creep results have been analyzed in terms of thermal and irradiation creep components assuming them to be additive. The thermal creep rate is given by a relationship of the type ε_th = A₁ exp [(A₂ + A _3σt) T] and the irradiation component by ε_rad = A_4σtø(T − A₅), where T = temperature, σ_t = hoop stress, ø = neutron flux and a₁ to A₅ are constants. Irradiation growth experiments carried out at 280° C on specimens machined from pressure tubes showed a non-linear dependence of growth strain on neutron fluence up to neutron fluences of 5 × 10²⁰ n/cm². The significance of these results to the elongation of RBMK reactor pressure tubes is discussed.     

Angular effects in the sputtering of Cr from stainless steel by 10 keV H3

Energy and angular distributions of Cr⁺ sputtered from stainless steel by 1.6 × 10⁻¹⁵ J (10 keV) H⁺₃ are reported as a function of angle of incidence. For more normal incidence, the peak in the energy distribution occurs in the vicinity of 3.2 × 10⁻¹⁹ J (2 eV), the average energy is approximately 1.12 × 10⁻¹⁸ J (7 eV), and the angular distribution is close to cosine. Toward glancing incidence, the peak energy increases to ˜6.4 × 10⁻¹⁹ J (4 eV), the average energy increases to ˜1.28 × 10⁻¹⁸ J (8.0 eV), and the angular distribution shows a distinct maximum in the forward direction. These results are discussed in terms of the increasing role of surface recoils in the sputtering mechanism at glancing incidence.     

The diffusivities of fission-created or thermally-doped tritium in UO2

The diffusion behavior of tritium in UO₂ was studied. Two methods were adopted for the introduction of tntium into UO₂: one via ternary fission of ²³⁵U and the other via thermal doping. In the former, the diffusion constants decreased with increase in sample weight. The diffusion constants obtained from the pellet with the same specification (9 mm in diameter, 5 mm high) were D″_bulk = 3.03 × 10⁻³(^+0.369_−0.003) exp[−163±43(kJ/mol)/RT](cm²/s) for fission-created tritium and D′_bulk = 0.15(^{+ 0.94}_−0.13) exp[−76±13 (kJ/mol)/RT](cm²/s) for thermally-doped tritium. The difference of the diffusion constants between two systems was discussed in terms of the effects associated with the recoil processes of energetic tritium.     

Thermodynamic studies on Cs4U5O17(s) and Cs2U2O7(s) by emf and calorimetric measurements

The oxygen potentials over the phase field: Cs₄U₅O₁₇(s)+Cs₂U₂O₇(s)+Cs₂U₄O₁₂(s) was determined by measuring the emf values between 1048 and 1206 K using a solid oxide electrolyte galvanic cell. The oxygen potential existing over the phase field for a given temperature can be represented by: Δμ(O₂) (kJ/mol) (±0.5)=−272.0+0.207T (K). The differential thermal analysis showed that Cs₄U₅O₁₇(s) is stable in air up to 1273 K. The molar Gibbs energy formation of Cs₄U₅O₁₇(s) was calculated from the above oxygen potentials and can be given by, Δ_fG⁰ (kJ/mol)±6=−7729+1.681T (K). The enthalpy measurements on Cs₄U₅O₁₇(s) and Cs₂U₂O₇(s) were carried out from 368.3 to 905 K and 430 to 852 K respectively, using a high temperature Calvet calorimeter. The enthalpy increments, (H⁰_T−H⁰₂₉₈), in J/mol for Cs₄U₅O₁₇(s) and Cs₂U₂O₇(s) can be represented by, H⁰_T−H⁰_298.15 (Cs₄U₅O₁₇) kJ/mol±0.9=−188.221+0.518T (K)+0.433×10⁻³T² (K)−2.052×10⁻⁵T³ (K) (368 to 905 K) and H⁰_T−H⁰_298.15 (Cs₂U₂O₇) kJ/mol±0.5=−164.210+0.390T (K)+0.104×10⁻⁴T² (K)+0.140×10⁵(1/T (K)) (411 to 860 K). The thermal properties of Cs₄U₅O₁₇(s) and Cs₂U₂O₇(s) were derived from the experimental values. The enthalpy of formation of (Cs₄U₅O₁₇, s) at 298.15 K was calculated by the second law method and is: Δ_fH⁰_298.15=−7645.0±4.2 kJ/mol.     

Research of Si and GaAs diode structures by Ion Beam Induced Charge (IBIC) collection

A Si pn junction diode and a GaAs Schottky diode were prepared for studying the basic mechanism of charge collection followed by high energy charged particle incidence in order to improve the resistance against single event upset. A 2 μm wide and 20 μm long rectangular Al electrode attached to a circular Al electrode with a 50 μm diameter was made on a 2.5 μm thick epilayer (minority carrier density 2 × 10¹⁵ /cm³). Both a Schottky electrode of Al (5 μm × 110 μm) and two ohmic electrodes of AuGe/Ni (110 μm × 110 μm) were made on a 2 μm thick epilayer (7.3 × 10¹⁵ /cm³) grown on a semi insulator GaAs substrate (1 × 10⁷ Ω cm). The internal device structure was examined by the IBIC (Ion Beam Induced Charge) method using a 2 MeV He⁺ ion microbeam. IBIC images clearly show an Al electrode, the SiO₂, and an epilayer. These results were then used to improve the qualities of the test diodes.     

The nuclear microprobe at the University of Arizona

A nuclear microprobe has been operational at the University of Arizona since early 1994. It utilizes a magnetic quadrupole doublet (model QL-300 from Microscope Associates, Inc.) with an 11 mm diameter aperture and lens lengths of 6 cm each. The magnetic pole tips are electrically insulated to enable electric rotational alignment and beam rastering by application of varying voltages to the pole tips. Ion beams are obtained from a 5.5 MV model CN, High Voltage Engineering Corp. Van de Graaff accelerator with a Penning type ion source. Present mininum beam spot size is about 2 μm obtained with a 4 MeV H₂⁺ beam with a current of about 40 pA. To date, the instrument has been successfully used to map concentrations of Hg, Cr, and As in rabbit renal slices using PIXE.     

Argon irradiation damage at a Cu/Al2O3 interface for different alumina structures

The evolution of damages at a Cu/Al₂O₃ device interface after Ar⁺ irradiation, depending on alumina structure, and the effect of surface roughness on sputtering have been studied. A polycrystalline Cu/Al₂O₃ bilayer and polycrystalline Cu on amorphous alumina were irradiated with 400 keV Ar⁺ ion beam at doses ranging from 5 × 10¹⁶ to 10¹⁷ Ar⁺/cm² at room temperature. The copper layer thicknesses were between 100 and 200 nm. RBS analysis was used to characterize the interface modification and to deduce the sputtering yield of copper. The SEM technique was used to control the surface topography. A RBS computer simulation program was used to reproduce experimental spectra and to follow the concentration profile evolutions of different elements before and after ion irradiation. A modified TRIM calculation program which takes into account the sputtering yield evolution as well as the concentration variation versus dose gives a satisfactory reproduction of the experimental argon distribution. The surface roughness effect on sputtering and the alumina structure influence at the interface on mixing mechanisms are discussed.     

Pressure dependence of extraction behavior of plutonium(IV) and uranium(VI) from nitric acid solution to supercritical carbon dioxide containing tributylphosphate

Plutonium(IV) and uranium(VI) were extracted into supercritical CO₂ fluid phase (SF-CO₂) containing tributylphosphate (TBP) with equilibrium distribution ratios, D, e. g., D_Pu(IV) = 3.1 and D_U(IV) = 2.0, for the extraction of 2 × 10⁻³ M Pu(IV) and U(VI) from 3 M HNO₃ into SF-CO₂ containing 0.3 M TBP at 60 °C and 15 MPa. A simple linear relation between D and density of CO₂; long D = a log + b (a,b; constants), was observed, which was explained theoretically by the formulation of the extraction equilibrium taking into account the phase distribution behavior of extractant TBP and extracted species, i.e. Pu(IV)- and U(VI)-TBP complexes involved in the extraction reaction. The slopes a of the log D vs. log plots were −(1.6 ± 0.1) and −(2.7 ± 0.5) for the extraction of Pu(IV) and U(VI), respectively. The differences in D as well as the slope a between Pu(IV) and U(IV) make it possible to design the U and Pu separation method by which one can achieve an enhancement of the extraction efficiency and selectivity by tuning the operation pressure.     

Method for precision measurement of the masses of short-lived nuclides with application of stable isobars

The distinction of the suggested scheme of the experiment is the application of the isobaric doublets method in determining the masses of short-lived nuclides by means of a high-resolution mass spectrometer. This method enables us to considerably decrease the systematic errors of the measurement results in comparison with the previously applied isotopic reference method.

The work was carried out on an experimental complex, the main component of which was a prism mass spectrometer (PMS) with resolution R = 3 × 10⁴, installed on-line with a mass separator and a synchrocyclotron of the LNPI of the Academy of Sciences of Russia. On this installation we measured the masses of the isotopes ^91–97Rb. Samples containing stable reference isotopes ^91,92,94,96Zr, ⁹³Nb or ^95,97Mo were introduced into the ionizer of the PMS for calibration of the mass scale, that was ensured by their ionization simultaneously with radioactive isotopes of rubidium coming from the mass separator. The values of the masses of the stable isotopes used as reference in the suggested method are known with a very high precision (ΔM/M 3×10⁻⁸), therefore they made a negligible contribution to our experimental errors.     

Li4SiO4 pebbles reduction in He + 0.1% H2 purge gas and effects on tritium release properties

Lithium orthosilicate reduction was examined by Temperature Programmed Reaction (TPR) and Temperature Programmed Desorption (TPD) methods performed in He (or Ar) + H₂ purge gas flowing through pebble bed specimens. The parameters governing the kinetics and the steady-state of the reduction process to Li₄SiO_4−x were determined at 800°C. The level x of the O-vacancy concentration at steady-state (of the order of 1.5×10⁻³ mole fraction) was found to be compatible with the impurities content in the specimens. Pebble pre-annealing treatments were found to affect the microstructure and the reduction mechanism. Post-irradiation tritium release by TPD tests were performed on both stoichiometric and reduced pebbles with similar results. Tritium release properties of this breeder system seem to be independent from the material reduction state (x).     

Electronic excitation effects in CeO2 under irradiations with high-energy ions of typical fission products

In order to understand the formation mechanism of a crystallographic re-structuring in the periphery region of high-burnup nuclear fuel pellets, named as “rim structure”, information on the accumulation process of radiation damage and fission products (FPs), as well as high-density electronic excitation effects by FPs, are needed. In order to separate each of these processes and understand the high-density electronic excitation effects, 70–210 MeV FP ion (Xe^10–14+, I⁷⁺ and Zr⁹⁺) irradiation studies on CeO₂, as a simulation of fluorite ceramics of UO₂, have been done at a tandem accelerator of JAEA-Tokai and the microstructure changes were determined by transmission electron microscope (TEM). Measurements of the diameter of ion tracks, which are caused by high-density electronic excitation, have clarified that the effective area of electronic excitation by high-energy fission products is around 5–7 nm  and the square of the track diameter tends to follow linear function of the electronic stopping power (S_e). Prominent changes are hardly observed in the microstructure up to 400 °C. After overlapping of ion tracks, the elliptical deformation of diffraction spots is observed, but the diffraction spots are maintained at higher fluence. These results indicate that the structure of CeO₂ is still crystalline and not amorphous. Under ion tracks overlapping heavily (>1 × 10¹⁵ ions/cm²), surface roughness, with characteristic size of the roughness around 1 μm, is observed and similar surface roughness has also been observed in light-water reactor (LWR) fuels.     

Carbon clustering in Si1−xCx formed by ion implantation

Silicon-carbon alloys were formed by multiple energy implantation of C⁺ ions in silicon and in Silicon on Sapphire (SOS). The ion fluence ranged between 5 × 10¹⁶ − 3 × 10¹⁷ ions/cm² and the energy between 10–30 keV in order to obtain constant carbon concentration into a depth of 100 nm. The carbon atomic fraction (x) was in the range 0.22–0.59 as tested by Rutherford backscattering spectrometry (RBS). Thermal annealing of the implanted films induced a transition from amorphous to a polycrystalline structure at temperatures above 850°C as detected by Infrared spectrometry (IR) in the wavenumber range 600–900 cm⁻¹. The optical energy gap and the intensity of the infrared signal after annealing at 1000°C depended on the film composition: they both increased linearly with carbon concentration reaching a maximum at the stoichiometric composition (x = 0.5). At higher carbon concentration the IR intensity saturated and the optical energy gap decreased from the maximum value of 2.2 to 1.8 eV. The behaviour at the high carbon content has been related to the formation of graphitic clusters as detected by Raman spectroscopy.     

Ion implantation doping and electrical conductivity enhancement of C60 films

Pristine C₆₀ films sublimed onto sheet mica were implanted with 20 keV K⁺ ions and I⁺ ions at doses of 1.0 × 10¹⁶/cm², 3.0 × 10¹⁶/cm² and 5.0 × 10¹⁶/cm², and with 20 keV Ar⁺ ions at a dose of 5.0 × 10¹⁶/cm². The distributions of dopants were studied using Rutherford backscattering spectrometry (RBS). The temperature dependence of sheet resistivity of the films was investigated applying a four-probe system. It was proposed that the conductivity enhancement of K⁺ implanted C₆₀ films was due to the implanted ions in the films, while for I⁺ implanted C₆₀ films, both implanted I⁺ ions and irradiation effects of the ions contributed to the enhancement of conductivity.