Investigation of the temperature dependence of electron and phonon Raman scattering in single crystal YBa2Cu3O6.952

Detailed Raman-scattering measurements have been performed on high-quality YBa₂Cu₃O_6.952 single crystal (T _c =93 K, T _c =0.3 K). A sharp (FWHM 7.2 cm^–1 at 70 K and 10.0 cm^–1 at 110 K) 340 cm^–1phonon mode has been observed inB _1g polarization. An electronic scattering peak at 500 cm^–1 in theB _1g polarization extends down to 250 cm^–1. These FWHM values determine the upper limit of the homogeneous linewidth of the phonon and electronic excitations. The start of the electronic spectral function renormalization and of the 340 cm^–1 mode anomalies (frequency softening, linewidth sharpening, and intensity increase) have been observed to occur approximately 40 K aboveT _c . The 340 cm^–1 mode Fano shape analysis has been performed and the temperature dependences of the Fano shape parameters have been estimated. All 340 cm^–1 mode anomalies have been explained by the electronic spectral function renormalization.This work was supported by Swedish Natural Sciences Research Council (G.B. and L.B.) and by the National Science Foundation (DMR 91-20000) through the Science and Technology Center for Superconductivity (G.B. and M.V.K.).     

Density and deposition rate of chemical-vapour-deposited boron nitride

A study is made on the density and deposition rate characteristics of chemical-vapour-deposited boron nitride (CVD-BN) plates synthesized by use of the BCl₃-NH₃-H₂ system at a deposition temperature (T _dep) of 1200 to 2000°C and a total gas pressure (P _tot) of 5 to 60 torr. At aP _tot of 5 torr, all the CVD-BN plates synthesized at eachT _dep above 1300°C had a density greater than 2.O g cm^–3, and thus showed no noticeable dependence onT _dep. Over theP _tot range from 10 to 60 torr. on the other hand, the density of the plates reached the maximum of 2.08g cm^–3 at aT _dep of 2000° C. AsT _dep was lowered, the density decreased down to a minimum of 1.40 g cm^–3 The deposition rate varied with bothT _dep andP _tot and showed a maximum value under a certainP _tot at a givenT _dep. The value ofP _tot where the deposition rate becomes maximum changed depending on theT _dep. The maximum deposition rate was 0.6 mm h^–1 for the CVD-BN plates when the density was less than 2.0 g cm^–3, and 0.4 mm h^–1 when the density was above 2.0 g cm^–3 The effects of deposition conditions on the characteristics of density and deposition rate are discussed in terms of the structure and deposition mechanism.     

FTIR investigation of structural modifications during low-temperature ageing of polycarbonate

Conformational changes are sought during low-temperature ageing of solution-cast films of BPA-polycarbonate, by observing the conformationally sensitive IR aromatic breathing band at 1600 cm^–1. Preliminary results using the carbonyl band at 1775 cm^–1 had shown some indication of ageing-induced changes in the distribution of conformations. The present results obtained on the 1600 cm^–1 band show no indication whatever of conformational rearrangements. This result, at variance with observations of conformational rearrangements accompanying sub-T _g annealing, lends support to the concept that sub-T _g annealing and low temperature ageing are two distinct processes.     

The critical constants of long-chain normal paraffins

Because of the recent availability of the critical constants of normal alkanes up to octadecane, some modifications in the estimation procedures for the critical constants have become necessary. It has been shown that the equation of Ambrose for the critical temperature of normal alkanes leads to the result that as n , the limiting value for the critical temperature is equal to the limiting value for the normal boiling point and the limiting value for the critical pressure is 1 atm. Currently, the CH₂ increment for the critical volume is considered constant. The recent data of Teja have shown that the CH₂ increment increases indefinitely in a homologous series until the critical volume reaches its limiting value. This has made the current procedure for estimating the critical volume obsolete. Taking into account the new measurements of Teja, we have now developed new equations for estimating the critical constants. The limiting values for an infinitely long alkyl chain for T _b, T _c, P _c, and V _c have been found to be 1021 K, 1021 K, 1.01325 bar, and 18618 cm³ · mol^–1, respectively. These new concepts have been applied to the estimation of various properties other than the critical constants.Nomenclature M Molar mass, kg·mol ^–1 - V _c Critical volume, cm³·mol^–1 - V ₁ Saturated liquid volume, cm³·mol^–1 - P _c Critical Pressure, bar - T _c Critical temperature, K - T _b Normal boiling point, K - T _B Boyle temperature, K - T _A Temperature at which the third virial coefficient is zero, K - V _c Limiting value of critical volume = 18,618 cm³ · mol^–1 - P _c Limiting value of critical pressure=1.01325 bar - T _c Limiting value of critical temperature = 1021 K - T _b Limiting value of normal boiling point = 1021 K - P _b Pressure at the normal boiling point, 1 atm - Z _c Critical compressibility factor - Z _c Limiting value for the critical compressibility factor = 0.22222 - R Gas constant, 83.1448×10^–6m³ · bar · K^–1 · mol^–1 - Acentric factor - X (T _c–T _b)/T _c - X ₁ (T _c–T)/T _c - X ₂ 1–(T _B/T)^5/4 - X ₃ 1–(T _A/T)^5/2 - Y P _c/RT _c - Surface tension, mN · m^–1 - B Second virial coefficient, cm³ · mol^–1 - B Limiting value for the second virial coefficient = –30,463 cm³ · mol^–1 - C Third virial coefficient, cm⁶ · mol^–2 - C _b Third virial coefficient at the normal boiling point, cm⁶ · mol^–2 - C _c Third virial coefficient at the critical temperature, cm⁶ · mol^–2 - C _B Third virial coefficient at the Boyle temperature, cm⁶ · mol^–2 - H _vb Enthalpy of vaporization at the normal boiling point, kJ · mol^–1 - n Number of carbon atoms in a homologous series - p Platt number, number of C-C-C-C structural elements - a, b, c, d, e, etc Constants associated with the specific equation - T _c ^* , T _b ^* , P _c ^* , V _c ^* , etc. Dimensionless variables     

Concentration dependence ofD,T 1, andT 2 for dilute solutions of3He in solid4He

Measurements of the spin diffusion coefficientD and NMR relaxation timesT ₁ andT ₂ are reported for dilute solutions of³He in solid⁴He at two molar volumes, 20.95 and 20.7 cm³. The weakly interacting impuriton model, for whichD ^–1 is proportional to impurity concentration, is observed only at fractional impurity concentrationx ₃ below 3 × 10^–4. Forx ₃ around 10^–3,T ₁ andT ₂ are controlled by the formation and breakup of³He₂ molecules.     

Optical Conductivity of La1.875Ba0.04Sr0.085CuO4

The in-plane optical conductivity and dc resistivity of La_1.875Ba_0.125–YSr _Y CuO₄ with y = 0.085 was measured from 30 to 20,000 cm^–1 and from 295 to 8 K. A strong extra-Drude absorption at finite frequency is detected both in the normal and superconducting state, and remains unchanged when the free carriers condensate. The present results confirm and extend recent infrared data on La_2–xSr_xCuO₄.     

Variable—Range hopping in Fe<Subscript>2</Subscript>O<Subscript>3</Subscript>-Bi<Subscript>2</Subscript>O<Subscript>3</Subscript>-K<Subscript>2</Subscript>B<Subscript>4</Subscript>O<Subscript>7</Subscript> glasses

The dc conductivity of the glasses in the Fe₂O₃-Bi₂O₃-K₂B₄O₇ system was studied at temperatures between 223 and 393 K. At temperatures from 300 to 223 K, T^–1/4 (T is temperature) dependence of the conductivity was found, however, both Mott variable-range hopping and Greaves intermediate range hopping models are found to be applicable. Mott and Greaves parameters analysis gave the density of states at Fermi level N (E_F) = 3.13 × 10²⁰–21.01 × 10²⁰ and 1.93 × 10²¹–16.39 × 10²¹ cm^–3eV^–1 at 240 K, respectively. The variable-range hopping conduction occurred in the temperature range T = 300–223 K, since W_D was found to be large (W_D = 0.08–0.14 eV for these glasses) and dominated the conduction at T < 300 K.     

Influence of different process parameters on physical properties of fluorine dopes indium oxide thin films

Fluorine-doped indium oxide films were prepared by the spray pyrolysis technique. The physical properties of these films were investigated with respect to various process parameters, namely variation of dopant concentration (in the solution), deposition temperature (T _s), carrier gas (air) flow rate and the thickness of the film. The best films had a Hall mobility of the order of 28 cm²V^–1 s^–1 and a carrier density of 2.7 × 10²⁰ cm^–3. These films were deposited at T _s=425 °C at an air flow rate of 71 min^–1 for an atomic ratio of fluorine to indium of 72%. The electrical resistivity of these films was of the order of 10^–4 cm and the average transmission in the visible range was found to be 80–90%. The films were polycrystalline, n-type semiconductors with [400] as a preferred orientation. The preferred orientation changes from [400] to [222] depending upon the process parameters.     

Electrical transport in light rare-earth orthochromites

Electrical conductivity, , Seebeck coefficient, S, and dielectric constant, , measurements on the pressed pellets of six light rare-earth orthochromites, RCrO₃, where R = La, Pr, Nd, Sm, Eu and Gd, have been carried out in the temperature range 300 to 1000 K. These are essentially electronic conductors, exhibiting p-type extrinsic semiconducting nature in the studied temperature range. The extrinsic charge carriers (holes) originate from Cr⁴⁺ centres which are present due to native defects in these solids. Their room-temperature electrical conductivities lie in the range 10^–7 to 10^{–5 –1} cm^–1, which become of the order of 10^{–2 –1} cm^–1 near 1000 K. The conductivity is a maximum in LaCrO₃ and drops across the RCrO₃ series, with SmCrO₃ being an exception. The mechanism involved in the electrical transport is the hopping of holes from Cr⁴⁺ centres to neighbouring Cr³⁺ ions. The activation energy of transport is nearly 0.3 eV. Typical hopping mobility of the holes is of the order of 10² cm^–2 V^–1 sec^–1 at 325 K and of the order of 10 cm² V^–1 sec^–1 at 1000 K. The mobility activation energy of the holes in a typcial RCrO₃ decreases with temperature due to the smoothing of the potential barriers between Cr⁴⁺ and Cr³⁺ sites. Several discontinuities are observed in the T against T ^–1 and S against T ^–1 plots of RCrO₃. The anomalies which these discontinuities reflect here have also been indicated.     

NMR measurements on dilute solutions of3He in solid4He

Measurements of the spin diffusion coefficientD and relaxation timesT ₁ andT ₂ are reported for³ He impurity in solid⁴ He of fractional concentrationx ₃ down to 10^–4. Forx ₃10^–3,T0.5 K, and molar volume 21.0 cm³,Dx ₃=1.2±0.4×10^–11 cm² sec^–2,T ₂ x ₃=1.7×10^–4 sec, andT ₁ x ₃=6.6×10^–2 sec at 2 MHz. The spectral densityJ() for dipole field fluctuations has been studied as a function of frequency from 10⁴ to about 10⁷ Hz. Two branches of approximately equal area have been found with scaling frequencies of about 10⁴ and 10⁶ Hz. It is argued that the high-frequency branch, which has some unusual structure, relates to ³ He- ⁴ He tunnelling, uninhibited by other ³ He impurities, and occurs at a rate of about 0.6 MHz for molar volume 21 cm³. The molar volume dependence of this tunneling appears to be similar to that found in pure, solid ³ He.     

P+ implantation and annealing effects on theT c in BiSrCaCuO films

TheT _c changes related to the microstructure as a function of annealing temperature for the BiSrCaCuO (BSCCO) film implanted with 170 keV P⁺ at two different doses were studied. The BSCCO films were prepared by d.c. sputtering on MgO substrates. For the film implanted at a dose of 5×10¹⁵ cm^–2 post-implantation annealing at 600–800°C enabled theT _cs of the film to be completely recovered. For the film implanted at a dose of 1.0×10¹⁷cm^–2 theT _cs were only partly recovered after 600°C annealing. On further annealing at 700°C the superconductivity of the film disappeared. TEM examination showed that significant amount of CaP, Ca₃P₂, and some unknown phases were formed. It is considered that the significant amounts of these phases formed during post-implantation annealing renders the recovery of the superconductivity of the P⁺-implanted BSCCO film difficult.     

Noncontact Measurements of Thermophysical Properties of Molybdenum at High Temperatures

Four thermophysical properties of both solid and liquid molybdenum, namely, the density, the thermal expansion coefficient, the constant-pressure heat capacity, and the hemispherical total emissivity, are reported. These thermophysical properties were measured over a wide temperature range, including the undercooled state, using an electrostatic levitation furnace developed by the National Space Development Agency of Japan. Over the 2500 to 3000 K temperature span, the density of the liquid can be expressed as _L(T)=9.10×10³–0.60(T–T _m) (kg·m^–3), with T _m=2896 K, yielding a volume expansion coefficient _L(T)=6.6×10^–5 (K^–1). Similarly, over the 2170 to 2890 K temperature range, the density of the solid can be expressed as _S(T)=9.49×10³–0.50(T–T _m), giving a volume expansion coefficient _S(T)=5.3×10^–5. The constant pressure heat capacity of the liquid phase could be estimated as C _PL(T)=34.2+1.13×10^–3(T–T _m) (J·mol^–1·K^–1) if the hemispherical total emissivity of the liquid phase remained constant at 0.21 over the temperature interval. Over the 2050 to 2890 K temperature span, the hemispherical total emissivity of the solid phase could be expressed as _TS(T)=0.29+9.86×10^–5(T–T _m). The latent heat of fusion has also been measured as 33.6 kJ·mol^–1.     

The Density of UO2–ZrO2 Alloys

The density of a UO₂–ZrO₂ melt (atomic ratio U/Zr = 1.528) is experimentally measured by a pycnometric method in the temperature range of 2973–3373 K. The found temperature dependence of density has the form (T) = (7.0 ± 0.01) – (4.5 ± 0.4) × 10^–4 × (T – 2973 K), g/cm³. The temperature dependence measured enables one to calculate the values of the density of UO₂–ZrO₂ melts depending on the temperature and composition for any atomic ratio U/Zr.     

Thermal boundary resistance at interfaces between sapphire and indium

The Kapitza thermal boundary resistanceR _K has been measured above 1 K on several sapphire-indium boundaries prepared with different methods. By vapor-deposition of indium on sapphire and subsequent cold-welding with bulk indium, reproducible results were obtained. With the indium superconducting, we foundR _KT ^–3 within a certain temperature range, andR _K(1K)=42–44 and 30–36 cm² K/W for polished and rough sapphire surfaces, respectively. The calculation according to the acoustic mismatch theory yieldsR _K(1K)20 cm² K/W. Samples prepared by ultrasonic soldering also follow the relationR _KT ^–3 approximately, and giveR _K(1K)=14–17 cm² K/W. However, it is doubtful whether the calculation presuming a smooth boundary can be applied to the latter samples. Furthermore, we found that the method of vapor deposition and subsequent pouring on molten indium does not give good contacts. Moreover, the electronic contribution to the heat transfer across the boundary has been proved by ruling out other effects.     

Thermal contact between cerium magnesium nitrate and liquid3He at very low temperatures

A new experimental arrangement has been used to measure the times for equilibrium between cerium magnesium nitrate (CMN) and liquid³He. Measurements have been made on a single crystal of CMN from temperatures of 5.5–15 mK and on a powdered specimen from temperatures of 2.5–35 mK. The thermal resistance deduced from the single-crystal data is proportional toT ^–2. The thermal resistance obtained from the powder data may be separated into three contributions: a resistance which is proportional toT ^–2in series with a parallel combination of a phonon resistance (with resistivity _P =3×10 ^–4 T ^–3sec·cm²·K ⁴ ·erg ^–1 ) and a magnetic resistance (with resistivity _M =9×10 ² T sec·cm ² ·erg ^–1 in zero applied magnetic field). A reduction in the magnetic resistance was observed when the powdered CMN was placed in a magnetic field, the magnitude of this reduction being comparable to that expected from a Redfield-like theory. TheT ^–2resistance is discussed in terms of two-dimensional energy transport within the CMN. The 17-Hz susceptibility of the powdered CMN was measured in magnetic fields of 0, 18.9, 30.2, and 37.8 G. The magnetic temperatureT* (H=37.8 G) was found to differ by +0.5 mK from the magnetic temperature in zero field whenT* (H=0)=3 mK.Work supported by the U.S. Atomic Energy Commission under Contract No. AT(04-3)-34, P.A.143.Supported by the Air Force Office of Scientific Research, Air Force Systems Command, USAF, under AFOSR Contract No. AFOSR/F-44620-72-C-0017.     

Non-contact measurements of thermophysical properties of niobium at high temperature

Four thermophysical properties of both solid and liquid niobium have been measured using the vacuum version of the electrostatic levitation furnace developed by the National Space Development Agency of Japan. These properties are the density, the thermal expansion coefficient, the constant pressure heat capacity, and the hemispherical total emissivity. For the first time, we report these thermophysical quantities of niobium in its solid as well as in liquid state over a wide temperature range, including the undercooled state. Over the 2340 K to 2900 K temperature span, the density of the liquid can be expressed as _L (T) = 7.95 × 10³ – 0.23 (T – T _m)(kg · m^–3) with T _m = 2742 K, yielding a volume expansion coefficient _L(T) = 2.89 × 10^–5 (K^–1). Similarly, over the 1500 K to 2740 K temperature range, the density of the solid can be expressed as _s(T) = 8.26 × 10³ – 0.14(T – T _m)(kg · m^–3), giving a volume expansion coefficient _s(T) = 1.69 × 10^–5 (K^–1). The constant pressure heat capacity of the liquid phase could be estimated as C _PL(T) = 40.6 + 1.45 × 10^–3 (T – T _m) (J · mol^–1 · K^–1) if the hemispherical total emissivity of the liquid phase remains constant at 0.25 over the temperature range. Over the 1500 K to 2740 K temperature span, the hemispherical total emissivity of the solid phase could be rendered as _TS(T) = 0.23 + 5.81 × 10^–5 (T – T _m). The enthalpy of fusion has also been calculated as 29.1 kJ · mol^–1.     

Effects of Thermal Annealing and Pulsed Photon Processing on the Relaxation and Crystallization of Amorphous Fe–P–Si Alloys

The crystallization behavior of amorphous Fe–P–Si alloys is found to be influenced by preliminary relaxation via thermal annealing below the crystallization temperature T _x or pulsed photon processing with energy densities in the range 1–18 J/cm². High-temperature annealing (above T _x) and pulsed photon processing reduce the particle size and microhardness of the alloys.     

Influence of a dc heat flux on the velocity of second sound nearT fλ

We have measured the speed of second soundu ₂ in He II in the presence of a heat fluxQ. ForT _f–1 mK>T>T _f–3.5 mK it is found thatu ₂ reduces linearly withQ ², for 2 mW/cm ² <Q<6 mW/cm ² . By extrapolating the data we have deduced that the lambda transition temperature reduces linearly withQ.     

Non-Contact Measurements of Surface Tension and Viscosity of Niobium, Zirconium, and Titanium Using an Electrostatic Levitation Furnace

The surface tension and viscosity of liquid niobium, zirconium, and titanium have been determined by the oscillation drop technique using a vacuum electrostatic levitation furnace. These properties are reported over wide temperature ranges, covering both superheated and undercooled liquid. For niobium, the surface tension can be expressed as (T)=1.937×10³–0.199(T–T _m) (mN·m^–1) with T _m=2742 K and the viscosity as (T)=4.50–5.62×10^–3(T–T _m) (mPa·s), over the 2320 to 2915 K temperature range. Similarly, over the 1800 to 2400 K temperature range, the surface tension of zirconium is represented as (T)=1.500×10³–0.111(T–T _m) (mN·m^–1) and the viscosity as (T)=4.74–4.97 ×10^–3(T–T _m) (mPa·s) where T _m=2128 K. For titanium (T _m=1943 K), these properties can be expressed, respectively, as (T)=1.557×10³–0.156(T–T _m) (mN·m^–1) and (T)=4.42–6.67×10^–3(T–T _m) (mPa·s) over the temperature range of 1750 to 2050 K.     

Transport properties of InSe x flash evaporated thin films

Thin films of InSe _x were obtained by vacuum evaporation of polycrystalline materials onto substrates at moderate temperatures,T _s. Electrical properties of films grown from different stoichiometries of flash source materials are reported in this work. The temperature dependence of the conductivities shows two conduction regimes. The low temperature regime exhibits aT ^–1/4 conductivity dependence which fits well, using the Mott model, with an average localized states density value ofN(E _F ) 8×10¹⁸cm^–3eV^–1. Hall measurements as a function of temperature show that the predominant conduction mechanism is scattering by grain boundaries in polycystalline films.