新型稀土配合物红色有机电致发光器件

合成了一种新型的共掺杂稀土Eu-Gd配合物Gd0.5Eu0.5(TTA)3Dipy,将其作为红光发射材料制备了结构为ITO/PVK:Gd0.5Eu0.5(TTA)3Dipy/PBD/Al的有机电致发光薄膜器件,得到了单色性好的红色有机电致发光器件,器件的开启电压为9 V,在16 V时达到最大亮度109 nit.研究了Eu-Gd配合物与PVK共掺杂体系的激发光谱和光致发光谱,结果发现两者间存在着能量转移,表明Gd3 的存在促进了PVK到Eu3 的能量传递.     

载流子传输材料对双层器件电致发光特性影响

以新的稀土红色荧光络合物－－Eu(TTA)m复合体系作为发光层,用不同载流子传输材料充当电子传输层做成双层器件,研究了双层器件的电致发光特性。对于空穴传输材料,高场下器件的电流表现为体内电阻限制;而对于电子传输材料,咖啡 件的电流表现为电极限制。从光谱的变化,可明显看出电场对复合区域的影响。     

蓝光聚合物共混材料的发光特性

研究了不同组成 PVK和 P6 共混材料薄膜的光吸收特性和光致发光特性 .用不同比例 PVK∶ P6 共混材料为发光层和 Alq3为电子传输层合成双层结构的蓝光器件 ,测量器件的电致发光谱、电流 -电压特性和亮度 -电压特性 .结果表明 ,共混材料的光致发光强度比 PVK和 P6 都有明显的增强 ,且随 PVK浓度的增加而增强 ;器件电致发光强度随 PVK浓度的增加而增强 ;不同 PVK掺杂浓度对电致发光器件的开启特性没有明显影响 ,发光亮度随 PVK掺杂浓度的增加而增大 .     

Tb(p-MBA)3phen与PVK混合体系发光性质研究

研究了铽配合物Tb(p-MBA)3phen与聚乙烯咔唑PVK共掺杂体系的电致发光(EL)和光致发光(PL)特性。结果发现,在EL中,PVK的发光完全被抑制,只能看到明显的Tb^3 绿光发射;而在PL中,除了Tb^3 发光外,还可以看到明显的PVK发光。这是由于两种发光机理不同造成的。通过测量材料的发射光谱和激发光谱,初步探讨了器件的发光机理,认为Tb^3 的发光可能来源于2个方面：1)PVK到稀土配合物的Foerester能量传递;2)PVK作为一种空穴传输材料,而稀土配合物作为电子陷阱,受激的空穴和电子直接被稀土配合物俘获,在稀土配合物上形成激子复合发光。所制作的单层器件的最大亮度达24．8cd／m^2。     

蓝光聚合物共混材料的发光特性

研究了不同组成PVK和P6共混材料薄膜的光吸收特性和光致发光特性．用不同比例PVK∶P6共混材料为发光层和Alq3为电子传输层合成双层结构的蓝光器件,测量器件的电致发光谱、电流-电压特性和亮度-电压特性．结果表明,共混材料的光致发光强度比PVK和P6都有明显的增强,且随PVK浓度的增加而增强;器件电致发光强度随PVK浓度的增加而增强;不同PVK掺杂浓度对电致发光器件的开启特性没有明显影响,发光亮度随PVK掺杂浓度的增加而增大．     

利用多掺杂体系制备白色OLED的研究

利用PVK、Eu(aspirin)3phen稀土配合物和Alq3共掺杂体系,制备了PVK:Eu(aspirin)3phen:Alq3为发光层、结构为ITO/PVK:Eu(aspirin)3phen:Alq3/BCP/Alq3/Al的有机发光二极管显示器件(OLED).保持PVK和Eu(aspirin)3phen的质量比为5∶1不变,改变PVK和Alq3的质量比,当PVK和Alq3的质量比为10∶1,得到了效果较好的白光,在电压为16 V时,器件色坐标达到(0.32,0.31),亮度为150 cd/m2.分析了掺杂体系中的能量传递过程以及器件的电致发光(EL)机理.     

PVK:NPB复合空穴传输层对有机电致发光器件的影响

采用poly(N-vinylearbazole)(PVK):N,N'-bis-(1-naphthyl)-N,N'-bipheny-1,1'-biphenyl-4,4'-diamine(NPB)掺杂体系作为复合空穴传输层,通过调节该体系的组分,制备了结构为indium-tin oxide(ITO)/PVK:NPB/8-hydroxyquinoline aluminum(Alq3)/Mg:Ag的双层有机电致发光器件(OLED),研究了具有不同掺杂质量比的OLED器件的电致发光特性,并对掺杂薄膜的表面形貌进行了表征.结果表明,将NPB掺杂到PVK中会提高空穴传输能力,改善器件的发光亮度和效率,并调节载流子复合区域的位置,光谱谱峰从509 nm移动到530 mm;但随着NPB质量比例提高,掺杂薄膜表面的平均粗糙度由3 nm上升为10 mm,电流密度和亮度先升高后降低.当PVK和NPB的掺杂质量比为l:3时,器件具有最优性能,发光亮度达到7852 cd/m2,功率效率为1.75 lm/W.     

PVK∶Alq3掺杂体系电致发光器件性能的研究

采用一定比例的PVK和Alq3混合薄膜作为发光层．制备了Al／PVK：Alq3／ITO单层器件。利用PVK和Alq3混合薄膜的吸收光谱、激发光谱、光致发光谱、电致发光谱研究了薄膜的激发态过程，结果表明PVK和Alq3之间存在着能量传递，器件所表现的发光主要为Alq3的发光。同时利用电流电压关系、发光强度和电压的关系对器件的光电性能进行了研究，发现Al／PVK：Alq3／ITO单层器件有良好的发光性能。     

其它材料

0307011PVK/SiO_2纳米粒子复合体系能量传递的研究[刊]/安利民//发光学报.—2002,23(6).—590～594(E)通过溶胶反应在乙醇溶液中合成了60nm 的SiO_2纳米粒子,将其与聚乙烯咔唑(PVK)共混,得到了不同质量分数的 PVK/SiO_2复合体系。利用荧光光谱、吸收光谱,研究了 PVK/SiO_2复合体系的荧光效应,光致发光的研究表明在 PVK 与 SiO_2纳米粒子之间存在界面能量传递过程,这种能量传递的必要条件是 PVK 的发射谱与 SiO_2纳米粒子的吸收谱有重叠。以上研究表明 PVK/SiO_2复合体系存在较强的界面效应,是研究有机与无机纳米体系界面效应的良好模型。参20     

有机电致发光中能量传递的研究

制备了一种以稀土铕钆络合物（Ｅｕ０．１Ｇｄ０．９）（ＴＴＡ）３（ＴＰＰＯ）２为发光材料的新型有机电致发光器件,测试了器件的性能以及器件在７７Ｋ和３００Ｋ温度下的电致发光光谱,观察到了三重态的电致磷光现象。通过分析表明,所观察到的电致磷光是Ｇｄ＾３＋对络合物配体电子自旋转轨道强烈扰动引起的三重态发光,而铕钆络合物配体和铕 离子之间的有效能量转移增强了铕离子的电致发光荧光强度。     

Emission mechanism in the terbium complex doped PVK system

A new kind of rare earth (RE) complex Tb(o-MBA)3phen was synthesized and used as an emitting material in electroluminescence. The material was doped into poly(N-vinylcarbazole) (PVK) as the emitting layer,which was made by spin coating. Three kinds of devices were fabricated with the structures: (A) ITO/PVK:Tb(o-MBA)3phen/LiF/A1; (B) ITO/PVK:Tb(o-MBA)3phen/BCP/AIQ3/LiF/A1; (C) ITO/BCP/PVK:Tb(o-MBA)3phen/A1Q3/LiF/A1. Bright green emission could be obtained from device (A) and (C). The photoluminescence (PL) and electroluminescence (EL) mechanisms of this material had been investigated. Since there was an overlap between the PL spectrum of PVK and the excitation spectrum of the terbium complex, there should be a F6rster energy transfer process between them. The excitation spectrum of PVK doped Tb(o-MBA)3phen system is similar with the excitation spectrum of PVK,yet it is different from that of Tb(o-MBA)3phen. So, the emission of Tb(o-MBA)3phen should partly come from the excitation of PVK while in the organic light-emitting diode (OLED), based on Tb(o-MBA)3phen, the emission mainly comes from the direct recombination of electron and hole. Bright green emission can be obtained from the optimized multi-layer device (C) and the highest EL brightness reached 180 cd/m2 at the voltage of 17 V.     

Going from green to white color electroluminescence through a nanoscale complex of Zinc (II)

In this paper, we report application of four novel Nano Zinc (II) complexes as the emitter dyes in organic light emitting diodes (OLEDs). The Nano Zinc (II) complexes emission, particularly its absorption, fluorescence spectra and quantum yield, tuned by varying sizes which affects environments of the Zinc (II) ion. OLED Devices with Nano Zinc (II) complexes were fabricated, giving rise to devices with peak emission ranging from 498 to 541 nm. Here, we have successfully employed sonoelectrochemical method for fabricating white OLEDs. The white emission ascribed to the exciton emission in Nano Zinc (II) complex emitter and from exciplex formation at the interface of PVK/Nano Zinc (II) complex. The experimental results demonstrate that this approach is ideal for color tuning of single and multilayer conducting semiconducting thin films used in the fabrication of organic electronic devices such as OLEDs.     

一种基于液晶性质的Pt配合物磷光材料电致发光器件

采用聚合物掺杂的方式,利用旋涂工艺制备了ITO/PVK:TOPPt/BCP(20 nm)/Mg:Ag(200 nm)结构的有机电致发光器件(OLED)。对掺杂浓度为2%(器件A)和4%(器件B)的磷光聚合物掺杂体系的光致发光(PL)和电致发光(EL)性质进行了分析研究,并对主体材料PVK到磷光客体材料TOPPPt的能量传递机制进行了讨论。实验表明,器件的EL谱谱峰位于625 nm,器件A在25 V时最大亮度为3037 cd/m2,最大电流效率为3.15cd/A。器件的EL谱不会随着偏置电压和掺杂浓度而改变,器件具有较好的稳定性。     

The role of exciplex states in phosphorescent OLEDs with poly(vinylcarbazole) (PVK) host

Polymer light emitting diodes (PLEDs) may revolutionize lighting and display industries. PLEDs would enable printing of display or lighting panels on large area substrates that could substantially reduce fabrication costs by avoiding expensive vacuum processes presently used in OLED technologies. PVK is one of the most popular hosts for blue PLEDs. However, PVK has very poor electron transport properties and oxadiazole based electron dopants, e.g. PBD or OXD-7, are used to improve charge transport. This is generally ascribed to capture and transport of electrons on the PBD or OXD-7. Here we show that this is not necessarily the only reason for improved efficiency upon PVK doping. We demonstrate that devices with PVK doped with PBD or OXD-7 have emission lasting up to 1 ms which in some cases may be greater than prompt emission from excitons formed initially on the dopant. This long-lived emission is arising mainly due to formation of an exciplex between the PVK and PBD/OXD-7. This exciplex state then repopulates dopant iridium complexes over a long period of time giving very long-lived emission. We also note that this exciplex-fed long-lived emission from heavy metal complexes is observed in several PLEDs with PBD and PVK (and also OXD-7) doped with blue or green iridium phosphors indicating this to be a general phenomenon.     

掺杂聚乙烯咔唑的有机二极管的伏安特性

本文提出了一种掺杂具有空穴导电特性的聚合物来改变有机二极管伏安特性的新方法。在导电玻璃上利用甩胶法分别制得两类有机薄膜层:聚烷基噻吩和掺杂不同量聚乙烯咔唑的聚烷基噻吩。将铝沉积在这些有机薄膜上作为有机二极管的负极。实验发现,掺杂聚合物的有机二极管电流电压非线性特性得到增强,经幂函数曲线拟合,若掺杂量适中,幂指数存在着一个最大值。     

Yellow–Orange Electroluminescence of Novel Tin Complexes

Novel tin complexes were synthesized for use as fluorescent materials in organic light-emitting diodes (OLEDs). The structures of these complexes were characterized by ultraviolet–visible, Fourier-transform infrared, and nuclear magnetic resonance spectroscopy methods and elemental analyses. The energy levels of the tin complexes were determined using cyclic voltammetry measurements. Devices were fabricated with an indium tin oxide (ITO)/PEDOT:PSS (90 nm)/PVK:PBD:tin complexes (75 nm)/Al (180 nm) structure; the resultant devices had peak emissions ranging from 537 nm to 580 nm. The tin complexes accounted for 8 wt.% of the blend in the PVK:PBD (100:40), which was used as a host. The electroluminescent spectra of the tin complexes were red-shifted as compared with the PVK:PBD blend. We believe that the electroluminescence performance of OLED devices based on tin complexes relies on overlaps between the absorption of the tin compounds and the emission of PVK:PBD.     

Tuning the Emitting Color of Organic Light‐Emitting Diodes Through Photochemically Induced Transformations: Towards Single‐Layer,Patterned, Full‐Color Displays and White‐Lighting Applications

Photochemically induced emission tuning for the definition of pixels emitting the three primary colors, red, green, blue (RGB), in a single conducting polymeric layer is investigated. The approach proposed is based on an acid‐induced emission shift of the (1‐[4‐(dimethylamino)phenyl]‐6‐phenylhexatriene) (DMA‐DPH) green emitter and acid‐induced quenching of the red fluorescent emitter (4‐dimethylamino‐4′‐nitrostilbene) (DANS). The two emitters are dispersed in the wide bandgap conducting polymer poly(9‐vinylcarbazole) (PVK), along with a photoacid generator (PAG). In the unexposed film areas, red emission is observed because of efficient energy transfer from PVK and DMA‐DPH to DANS. Exposure of selected areas of the film at different doses results in quenching of the red emitter's fluorescence and the formation of green, blue, or even other color‐emitting pixels, depending on the exposure dose and the relative concentrations of the different compounds in the film. Organic light‐emitting diodes having the PVK polymer containing the appropriate amounts of DMA‐DPH, DANS, and PAG as the emitting layer are fabricated and electroluminescence spectra are recorded. The time stability of induced emission spectrum changes and the color stability during device operation are also examined, and the first encouraging results are obtained.     

Molecular Doped Polymer Light Emiting Diodes with Air－stable Aluminum as Cathode

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Synthesis of New Europium Complexes and Their Application in Electroluminescent Devices

Several substituted phenanthrolines (L = pyrazino[2,3‐f][1,10]phenanthroline (PyPhen), 2‐methylpyrazino[2,3‐f][1,10]phenanthroline (MPP), dipyrido[3,2‐a:2′,3′‐c]phenazine (DPPz), 11‐methyldipyrido[3,2‐a:2′,3′‐c]phenazine (MDPz), 11,12‐dimethyldipyrido[3,2‐a:2′,3′‐c]phenazine (DDPz), and benzo[i]dipyrido[3,2‐a:2,3‐c]phenazine (BDPz)) were successfully prepared and europium complexes Eu(TTA)₃L (Eu‐L) based on these ligands were synthesized from EuCl₃, 2‐thenoyltrifluoroacetone (TTA) and L in good yields. Irradiation at the absorption band between 320–390 nm of all these europium complexes, except Eu‐BDPz, in solution or in the solid state leads to the emission of a sharp red band at ～ 612 nm, a characteristic Eu³⁺ emission due to the transition ⁵D₀ → ⁷F₂. No emission from the ligands was found. The result indicates that complete energy transfer from the ligand to the center Eu³⁺ ion occurs for these europium complexes. In contrast, the photoluminescence spectrum of Eu‐BDPz exhibits a strong emission at around 550 nm from the coordinated BDPz ligand and a weak emission at 612 nm from the central europium ion. Incomplete energy transfer from the ligand to the central Eu³⁺ ion was observed for the first time. Several electroluminescent devices ( A – I ) using Eu‐PyPhen, Eu‐MPP, Eu‐DPPz, and Eu‐DDPz as dopant emitters with the device configuration: TPD or NPB (50 nm)/Eu:CBP (1.7–7 %, 30 nm)/BCP (20–30 nm)/Alq (25–35 nm) (where TPD: 4,4′‐bis[N‐(p‐tolyl)‐N‐phenylamino]biphenyl; NPB: 4,4′‐bis[1‐naphthylphenylamino]biphenyl; CBP: 4,4′‐N,N′‐dicarbazole biphenyl; BCP: 2,9‐dimethyl‐4,7‐diphenyl‐1,10‐phenanthroline; Alq: tris[8‐hydroxyquinoline]aluminum) were fabricated. Some of these devices emit saturated red light and are the only europium complex‐based devices that show a brightness of more than 1000 cd m^–2.