CMOS realization of single-resistance-controlled and variable frequency dual-mode sinusoidal oscillators employing a single DVCCTA with all-grounded passive components

In this paper, two new designs are proposed for sinusoidal oscillators based on a single differential voltage current conveyor transconductance amplifier (DVCCTA). Each of the proposed circuits comprises a DVCCTA combined with passive components that simultaneously provides both voltage and current outputs. The first circuit is a DVCCTA-based single-resistance-controlled oscillator (SRCO) that provides independent control of the oscillation condition and oscillation frequency by using distinct circuit parameters. The second circuit is a DVCCTA-based variable frequency oscillator (VFO) that can provide independent control of the oscillation frequency by adjusting the bias current of the DVCCTA. In this paper, the DVCCTA and relevant formulations of the proposed oscillator circuits are first introduced, followed by the non-ideal effects, sensitivity analyses, frequency stability discussions, and design considerations. After using the 0.35-μm CMOS technology of the Taiwan Semiconductor Manufacturing Company (TSMC), the HSPICE simulation results confirmed the feasibility of the proposed oscillator circuits.     

电流控制差分电压输入电流传输器设计及应用

设计了一种电流控制差分电压输入电流传输器的结构。较之前的相关文献,文中设计的电路结构具有较高的电路性能,在具有功耗低的同时,X端寄生电阻范围大。除此之外,跨导线性环结构只使用NMOS构成,无PMOS处理交流信号使得电路带宽性能得到提高;电路采用轨对轨输入,使得输入电压范围得到扩展。     

On the generation of CCII and ICCII oscillators from three Op Amps oscillator

A new quadrature oscillator using two current conveyors (CCII) and two inverting current conveyors (ICCII) is generated from a three Op Amp two integrator loop oscillator. The proposed oscillator is generalized and it is found that it is a member of a family of 64 oscillator circuits using combination of CCII and ICCII. Four of the reported oscillators are floating. The three Op Amps oscillator is also found to be the reference oscillator circuit in the generation of two basic CCII two integrator loop grounded passive element oscillators. The nodal admittance matrix (NAM) expansion is used to show the basic steps in the generation of the two alternatives CCII grounded passive element oscillators. Each of the two CCII oscillators is a member of a family of sixteen oscillator circuits using combination of CCII and ICCII. Two of the reported oscillators are floating and their adjoint oscillator circuits are not floating. Simulation results are included.     

一种新型的宽线性范围差分电压输入电流传输器及其应用

设计了一种带有共模检测电路的宽线性范围差分电压输入电流传输器(DVCCⅡ).所提出的电路具有动态的长尾电流的差分对,可获得较大的动态线性输入范围.所提出的电路可以得到精确跟随特性和宽线性输入范围,且比较已有电路具有低电压低功耗等特点.采用SMIC 0.18μm工艺,用Spectre对电路进行仿真,电源电压是1.8 V,...     

Voltage-mode high-Q band-pass filters and oscillators employing single CDBA and minimum number of components

In this paper, voltage-mode second order high-Q band pass filters and oscillators which employ only single current differencing buffered amplifier (CDBA) as the active component are proposed. One of the four filter circuits and two of the four oscillators described have minimum passive component count properties, without using the internal pole of the active element. These BP filters can be easily cascaded without any recourse to impedance matching circuitry. The circuits have been analysed theoretically, simulated and experimentally tested in a laboratory. It is shown that the results of simulations and experimental work are in agreement with theoretical predictions.     

Generation of second generation current conveyor (CCII) family from inverting second generation current conveyor (ICCII) family

Based on the nodal admittance matrix (NAM) representation of the voltage mirror (VM)–norator pair and considering the case of an inverting second generation current conveyor (ICCII?), it is found that the second generation current conveyor (CCII?) is a special case from the generalised ICCII?. Considering the NAM of the VM–current mirror pair, it is also found that the CCII+ is a special case from the generalised ICCII+.     

Design and implementation of monostable multivibrators employing differential voltage current conveyors

In this paper, two novel application circuits utilizing the differential voltage current conveyor (DVCC) are introduced and implemented. To the best knowledge of authors, this is the first reported monostable multivibrators employing DVCC device. Each presented circuit is constructed by single DVCC as the basic active building block together with a few passive components. Both of them can be operated via a positive-edge triggering signal to generate a pulse waveform with an adjustable width. The first one is a general monostable circuit. The second design is an improved construction, which shortens the recovery time for applying the consecutive triggering signals. The circuit operations are first described and then the non-ideal issues and design considerations of the proposed circuits are discussed. To demonstrate their feasibility, the presented circuits are simulated using circuit simulation program Is-Spice. Available commercial ICs and discrete components are used to implement the prototype circuits. Simulation and experimental results agree well with the theoretical analysis.     

一种基于自举电路的可调恒压恒流源设计

介绍了一种基于自举电路的可调恒压恒流源的设计.解决了使用普通运算放大器调整较高输出电压的问题.在输出电压在较大范围变化时,通过自举的方法保证运算放大器的供电电压不变,并且能够对输出电压和电流进行有效地调整,实现了0~30V的电压输出和0~1A的电流输出.     

基于电压阀和电流阀模型的晶体管放大电路分析

依据已经提出的电压阀和电流阀两种非线性电路模型以及由电压阀和电流阀构造出的晶体管模型,进一步对各种晶体管放大电路进行了非线性模型等效,并在等效的模型电路基础上,研究晶体管放大电路的静态工作点计算方法、动态参数计算方法.该方法具有电路直观、概念清晰、分析计算准确等特点,而且能够判断出晶体管是否截止或饱和、动态工作范围大小等.     

Generation of CCII and ICCII based Wien oscillators using nodal admittance matrix expansion

This paper introduces a new generation method of the grounded capacitor Wien oscillator circuits using current conveyors (CCII) or inverting current conveyors (ICCII) or combination of both of them. The nodal admittance matrix (NAM) of the single Op Amp Wien oscillator is taken as the starting point in the new approach of systematic synthesis of equivalent oscillators. The synthesis procedure is based on the generalized systematic synthesis framework using NAM expansion. The resulting derived 32 oscillators include many novel oscillators, using current conveyors or inverting current conveyors or both. Comparison between the generated oscillators based on the effect of parasitic elements on the oscillator performance is discussed.     

电流反馈型运算放大器及应用

迅猛发展的高速系统，增加了对高速型运放的需求，因此电流反馈型运算放大器的应用日益广泛。但是，目前国内有关它的原理和有关特性的详细说明却几乎没有。着重说明了电流反馈型运算放大器的基本原理和有关特性，并给出了用AD811电流反馈型运算放大器构成的矩形波发生器具体电路。实验证明输出波形的跳沿小于50ns。     

Zn_(1-x)Cd_xSe/ZnS量子阱材料的共振遂穿特性研究

本文通过对共振隧穿电流密度随外加偏压及应力而变的依赖关系的理论研究,模拟了Zn1-xCdxSe/ZnS共振隧穿电流密度随外加偏压及应力的变化曲线.给出了等效电阻系数随外加偏压及应力而变的依赖关系,得出了介观压阻系数与外应力的变化符合线性关系的结论.这些结论为将机械信号转换为电学信号的介观效应器件的设计提供了理论指导.     

Effect of substrate temperature on indium tin oxide (ITO) thin films deposited by jet nebulizer spray pyrolysis and solar cell application

This study focused on the effect of substrate temperature (350 °C, 400 °C, and 450 °C) on morphological, optical, and electrical properties of indium tin oxide (ITO) films deposited onto porous silicon/sodalime glass substrates through jet nebulizer spray pyrolysis for use in heterojunction solar cells. X-ray diffraction analysis confirmed the formation of pure and single-phase In₂O₃ for all the deposited films whose crystallinity was enhanced with increasing substrate temperature, as shown by the increasing (222) peak intensity. Morphological observations were conducted using scanning electron microscopy to reveal the formation of continuous dense films composed of nanograins. The UV–vis spectra revealed that the transmittance increased with increasing substrate temperature, reaching a value of over 80% at 450 °C. The photoelectric performance of the solar cell was studied using the I–V curve by illuminating the cell at 100 mW/cm². A high efficiency (η) of 3.325% with I_sc and V_oc values of 14.8 mA/cm² and 0.60 V, respectively, was attained by the ITO solar cell annealed at 450 °C.     

Relation between morphology and performance parameters of poly(3-hexylthiophene):Phenyl-C61-butyric acid methyl ester photovoltaic devices

Poly(3-hexylthiophene):[6,6]-phenyl-C61-butyric acid methyl ester (P3HT:PCBM) bulk heterojunction (BHJ) solar cells are one of archetypal polymer photovoltaic devices. Understanding the relationship between electronic properties and active layer morphology is essential to obtain high-performance electronic devices. The magnitudes of the short circuit current (J_SC), the fill factor (FF) and the open circuit voltage (V_OC) will vary on the basis of changes in phase purity, interfacial region area and domain size of the active layer. We investigated the device characteristics of the samples having comparable phase purity and found that the performance parameters were better in the device having larger interfacial region area. In another case the phase purity decreases, the interfacial area increases and the recombination rate increases, resulting FF and V_OC increase, J_SC first increases then decreases. Power conversion efficiency (PCE) increases with the increase of interfacial region area, although at the same time associates with the decrease of the phase purity. The device efficiency reaches optimal value by balance the phase purity and the interfacial area. We finally investigated the two devices where, in spite of significant difference between domain dimensions, the PCEs were quite similar. Especially, the devices having large micrometer scale PCBM crystals also obtain good PCEs if they have enough interfacial areas.     

提高隔离器焊接可靠性及驻波特性技术研究

高可靠固态功率放大器(SSPA)常采用隔离器来实现较好的驻波特性,为保证隔离器联接焊点能够承受上百次温度循环试验和高量级的随机振动试验,常采用Ω桥进行联接。针对隔离器搭桥焊接后驻波特性恶化的问题进行了设计和试验,提出了改善驻波特性的措施,提高了产品可靠性。论述了搭桥状态的匹配电路设计和焊接搭桥工艺的实现方法,满足了电路设计和可靠性设计要求,并对设计方案和可靠性进行了试验验证。试验结果表明,驻波比(VSWR)得到了较大改善,与搭桥前隔离器直接连接微带线的驻波特性一致,通过了100次-55～85℃温度循环试验和加速度总均方根值为207.1 m/s2的随机振动试验,电性能与可靠性满足设计要求。该技术研究成果为提高产品可靠性和隔离器的安装互连提供了设计依据。     

脉冲功率电源中浪涌电流与电压的分析及抑制

针对功率脉冲电路放电过程中存在的电流和电压冲击问题,建立了电路的分布参数模型和二极管的PSPICE模型。分析了放电过程中的浪涌电流和电压的产生的机理,采用PSPICE软件对电路放电的瞬态过程进行了仿真,提出了抑制浪涌电流和电压冲击的方法。仿真结果表明:适当增加二极管回路的阻尼电阻,可以降低或消除浪涌电流;在二极管两端并上适当的电阻,可以降低浪涌电压。     

电流密度比、反射率对双节RSOA的增益、噪声指数的影响

A 1.3 μm two-section multi-quantum well reflective semiconductor optical amplifier is designed and fabricated.The impacts of injection current density ratio and the reflectivity of the reflective facet on gain,saturation and noise characteristics are studied theoretically and experimentally.The results indicate that the gain and saturation power can be easily manipulated by changing the current density ratio;and better gain and noise characteristics can be obtained when the reflectivity is appropriately selected.     

Neural Network Normalization (N3) to Uncover the Differential Signal of cDNA Microarrays

cDNA microarray is a high throughput technology for gene expression analysis. Differing from conventional molecular approaches, which detect molecular targets on a one-by-one basis, cDNA microarray monitors gene expressions of living organisms on a global scale. However, the signal detected by a microarray assay contains a significant amount of noise. Certain types of noise are introduced by the systematic variations that are hardly avoidable by experimental approaches. Significant biological information can only be recognized after the original or raw data sets of microarray assay have been effectively processed. We report here our progress in establishing a Neural Network Normalization (N3) approach to cDNA microarray data processing. With the strong learning ability of the artificial neural network, the trained N3 algorithm is capable of the detection and suppression of systematic variations during microarray data processing and has plasticity in handling both linear and non-linear microarray data sets. The potential of this system in signal processing for other types of biochips, including nucleic acid and non-nucleic acid-based biochips, is yet to be explored.     

埋栅结构静电感应晶体管耐压容量与I-V特性的改善

静电感应晶体管(SIT)有源区外围边界各种寄生电流的存在,不仅造成了阻断态下漏电增大,导致I-V特性异常,造成器件性能劣化,并且降低了器件的成品率。在器件有源区周围设计了保护沟槽,形成了槽台结构的孤岛,从物理上有效地切断了可能的寄生电流,改善了器件的耐压能力,优化了I-V特性。槽台结构通过对表面的台面造型来控制表面电场,能有效提高器件的击穿电压,改善器件电性能。