A Dual-Mode Latching Reciprocal Ferrite Phase Shifter

A ferrite phase shifter has been developed to provide latching reciprocal phase shift over a moderate frequency band. The principle of operation is based on the use of dual-mode circularly polarized waves in the active ferrite with nonreciprocal polarizers to select modes that provide reciprocal transmission phase. The physical structure of the phase shifter consists of a metallized assembly of ferrite and ceramic dielectric. A ferrite yoke is fitted over a portion of this assembly to permit latching operation. The completed phase shifter has a very simple geometry that can be produced at low cost and has relatively low insertion loss. The maximum cross-sectional dimensions are small and are consequently compatible with application in two-dimensional electronically scanned arrays. Experimental results are presented for an X-band design having a 10-percent bandwidth centered near 9 GHz.     

微波MEMS移相器的特性分析与实现

从移相器的基本原理出发,分别介绍了开关线型、耦合器型和加载线型三种采用微机械加工技术制备而成的微波MEMS移相器的结构特点和工作原理。在此基础上,设计制备了CPW分布式加载线型MEMS移相器,并进行测试和分析,结果表明MEMS移相器较传统的移相器有微型化、低损耗、低成本、宽带等突出优点。     

基于铁电移相器的Ka波段低成本相控阵天线研究

为解决铁电体陶瓷移相器中高相对介电常数材料间的匹配问题,研制了一种可用于Ka波段低成本相控阵天线的新型铁电体陶瓷材料移相器,并用其设计制作了一种一维电扫低成本相控阵天线。结果表明:通过利用三级阻抗匹配技术,所制新型移相器中高相对介电常数材料间的匹配问题得到了有效解决。当外加偏置电压约为11 kV时,该移相器可在损耗小于2.2 dB的情况下实现360°相移。     

An Ultra-Compact CMOS Variable Phase Shifter for 2.4-GHz ISM Applications

An ultra-compact monolithic microwave integrated circuit active variable phase shifter is proposed and implemented using CMOS technology. It is a reflective-type phase shifter consisting of a compact three-transistor active circulator and a second-order LC network. The use of an active inductor in the second-order LC network makes this phase shifter all active and ultra compact with a size of only 0.357 including bonding pads. The phase shifter was designed and demonstrated at 2.4 GHz and has a linear and continuously tunable range of 120 across the 2.4-GHz industrial-scientific-medical band.     

A sophisticated analysis procedure for an MMIC phase shifter

This paper describes a new analysis procedure for a highpass and lowpass (HP/LP) filter type MMIC phase shifter consisting of switching GaAs MESFETs. This paper reveals that a specially designed large signal model for a switching MESFET, described by a gate bias dependent equivalent circuit, is the key to realizing an accurate nonlinear simulation of the HP/LP filter type phase shifter. The new analysis procedure realizes a highly accurate phase shifter analysis for both linear and nonlinear simulations. A comparison between the analysis results and measurement results for the phase shifter shows excellent agreement     

一种新型Radant透镜式移相器的研究

介绍了Radant透镜相控技术在降低相控阵雷达制造成本中的重要作用,分析了Radant透镜式移相器的基本结构及其移相原理,在此基础上设计了一种相移位数为5位的结构新颖的移相器Radantlens,并应用微波等效网络方法分析了基本相移单元的工作机制,获得了影响插入相移的主要参数。然后,运用基于有限元法的商业软件HFSS进行仿真计算,证明了这种新型移相器结构能够产生所需要的插入相移,并具有良好的传输特性。最后,设计了两种满足工程研制需要的新型基本相移单元。     

基于数据驱动动态逻辑电路的桶形移位器设计

介绍了一种新型数据驱动的动态逻辑电路。该电路去除了时钟信号,利用适当的输入数据来保持电路正确的逻辑操作。基于数字驱动的动态逻辑电路,设计了一种新型低功耗、高性能的8位桶形移位器。仿真结果表明,在相同的工作频率下,与基于传统动态逻辑电路的8位桶形移位器相比,新型8位桶形移位器的版图面积减少了40%,速度提高了17%,功耗-延迟积减少了14%。     

一种基于电荷泵锁相环的高精度数字移相方法

移相器是相控阵雷达的核心器件,随着工作频率的逐步提升,传统移相器的插入损耗和相位控制误差恶化严重,导致额外增加的功耗及波束性能变差.本文基于电荷泵锁相环（Charge Pump Phase-Locked Loop,CP-PLL）开展了高精度数字移相方法的研究.在分析CP-PLL相位数学模型与移相机理的基础上,提出了通过数控电流源的方法实现对输出信号相位的精确控制,建立电路模型开展仿真分析,并设计了实验电路模块,通过仿真和实测的对比验证了该方法的有效性和精确性,实现了移相步进优于1°,移相精度优于移相值的10%.该CP-PLL可通过作为本振信号或直接产生发射信号应用于相控阵雷达系统中,具有精度高、功耗低、易集成等特点,从而取代移相器,有效提升相控阵雷达的性能.     

Compact reflective-type phase-shifter MMIC for C-band using alumped-element coupler

The design and results of an ultra-compact single-load reflective-type monolithic-microwave integrated-circuit phase shifter at 6.2 GHz for a satellite radar system is presented in this paper, which has been fabricated using a commercial 0.6-μm GaAs MESFET process. A 3-dB 90° coupler with lumped elements enables significant circuit size reduction in comparison to former approaches applying microstrip branch line or Lange couplers. Phase control is enabled using MESFET varactors with capacitance control ratios (C_max/C_min ) of only four. Equations are derived to precisely describe the phase control ranges versus capacitance control ratios for different load configurations to allow efficient optimizations. Furthermore, the design tradeoff between low loss and high phase control range is discussed. Within a phase control range of 210°, a loss of 4.9 dB±0.9 dB and a 1-dB input compression point of higher than 5 dBm was measured for the designed phase shifter. The circuit size is less than 0.5 mm², which, to our knowledge, is the smallest reflective-type phase-shifter size reported to date     

Polarization-agile microstrip antenna array using a single phase-shift circuit

A novel polarization-agile microstrip antenna array is proposed, in which the polarization agility from linear to circular polarization for the whole array is realized easily by controlling a single phase-shift circuit. Using the corner-fed square patch element, a new 16 element dual-polarized array with high isolation and low cross-polarization is designed and analyzed by the extended multiport network method. A special FET phase shifter circuit is created, where 0/spl deg/ or 90/spl deg/ phase shift between dual ports is electrically switched. Experimental results are presented to verify the theory, and measured circularly-polarized radiation patterns show a boresight axial ratio of 0.5 dB. Another experiment that connects a low noise amplifier together with the phase-shift circuit is also introduced, realizing both polarization agility and power amplification with one active circuit.     

一种铁氧体移相器控制系统的设计

首先,阐述了一种铁氧体移相器控制系统,包含波控与移相器驱动电路两部分;然后,由项目设计角度出发,详细介绍了基于FPGA的波控电路设计方法,以及移相器位数与单位脉宽的关系;最后,阐明了移相器工作原理和移相器驱动电路的构成.     

A 2-V 1.9-GHz Si down-conversion mixer with an LC phase shifter

This paper describes a 2.0-V 1.9-GHz silicon down-conversion mixer with an LC phase shifter in a 20-GHz bipolar process. In this circuit, the lower emitter-coupled pair in a Gilbert cell mixer is removed to enable low voltage operation, and instead an LC phase shifter is inserted between two current sources. The time constant of the LC phase shifter has to be optimized, because the phase shifter acts as a low-pass filter and the lower cutoff frequency results in the loss of signal power. By this optimization, it can keep both high conversion gain and low distortion. The experimental results show conversion gain of 7.0 dB and the input third-order intercept point of -1.0 dBm are realized at 2.0 V     

一种X波段五位数字移相器的研究与设计

介绍了数字移相器的基本原理及设计方法。在ADS仿真环境下,基于GaAs HJ—FET开关器件,设计仿真了一种X波段五位数字移相器,大大降低了移相器的后期制作成本。利用矢量网络分析仪对制作的实物进行了测试,结果表明：在12—12．5GHz频段内,移相器的最大插损小于9．5dB,均方根相位误差在3°以内。     

A hybrid phase shifter circuit based on TlCaBaCuO superconductingthin films

A superconductor-semiconductor hybrid reflection-type phase shifter circuit has been designed, fabricated, and characterized for 180° phase bit with center frequency of 4 GHz and bandwidth of 0.5 GHz for operation at 77 K. All of the passive components of the phase shifter circuit such as input/output feed lines, 3 dB Lange coupler, impedance matching networks, and transmission lines consisted of thallium based superconducting TlCaBaCuO thin films of 4000 Å thickness on lanthanum aluminate substrate. Metal-Schottky field-effect-transistors (MESFET's) on GaAs semiconductor were used as active devices for switching action (on-state and off-state) in the phase shifter circuit. The phase shift and insertion losses were investigated as a function of frequency from 3.6 to 4.6 GHz at 77 K. The circuit exhibited a fairly flat response of 180° phase shift with a maximum deviation of less than 2° and a maximum insertion loss of 2 dB for on-state and 2.2 dB for off-state conditions over 0.5 GHz bandwidth at 4 GHz. The insertion losses were also fairly flat within the bandwidth. The insertion losses were constant between 50 and 80 K, giving the circuit a large range of operation at or below 77 K. The performance of this circuit as compared to a gold microstrip-semiconductor circuit designed identically was superior by a factor of 1.5, and may be due to lower conductor losses and lower surface resistance in the superconducting microstrips     

RF MEMS phase shifters based on PCB MEMS technology

An X-band main-line type loaded line RF MEMS phase shifter fabricated using printed circuit based MEMS technology is reported. The phase shifter provides a phase shift of 31.6/spl deg/ with a minimum insertion loss of 0.56 dB at 9 GHz for an applied DC bias voltage of 40 V. These phase shifters are suitable for monolithic integration with low-cost phased arrays on Teflon or Polyimide such as low dielectric constant substrates.     

单偏置电压多位分布式MEMS传输线移相器

针对传统多位分布式MEMS传输线(DMTL)移相器需要多个偏置电压控制的问题,提出了一种单电压控制多位DMTL移相器的设计方案。这种移相器的每一位具有不同的弹性系数,因此它们的下拉电压各不相同。给出了这种移相器的相关理论、设计实例及仿真结果。通过仿真结果可知,单偏置电压3位DMTL移相器低位到高位的下拉电压分别为19.73,40.49和74.89 V,低位发生下拉时高位相移偏移小于0.062%(10 GHz,2.925×10-4 rad)。单偏置电压4位DMTL移相器低位到高位的下拉电压分别为19.73,32.55,48.41和74.89 V,低位发生下拉时高位相移偏移小于0.094%(10 GHz,4.425×10-4 rad)。     

A novel phase shifter using two NMOS transistors and passive elements

In this paper, a new voltage-mode configuration for realizing a first-order phase shifter is suggested. The proposed phase shifter contains low number of components, i.e. two n-type metal-oxide semiconductor field effect transistors (NMOS transistors) both operating in saturation region, a grounded capacitor and three resistors. The presented circuit can be equipped with electronic tunability by using externally controllable electronic resistor. Computer simulation results, using SPICE program, are given to demonstrate the performance of the proposed phase shifter.     

Compact reflective microstrip phase shifter for traveling wave antenna applications

A varactor diode based microstrip phase shifter for 5.8GHz is presented. It is designed for use in microstrip traveling wave antennas where there is a strict limitation on the available space for the phase shifters. To meet all requirements, a reflective type phase shifter is chosen. Such a phase shifter includes a hybrid coupler. A compact branch line coupler is designed to make the phase shifter fit between the radiating elements in the antenna, while maintaining sufficient electrical performance. Phase shifters are designed with different types of stubs connecting the diodes to ground. A phase tuning range of 62/spl deg/ is measured for a phase shifter with parallel open stubs, and 92/spl deg/ with shorted stubs. Insertion loss is in both cases less than 0.6dB. A complete five-element array antenna is built and characterized. Measurements show beam scanning angles within /spl plusmn/32/spl deg/ from broadside.     

基于单边带时间调制的CMOS有源移相器设计

为满足低成本相控阵对高精度波束扫描的需求,提出了一种基于单边带时间调制(single-sideband time-modulation, STM)的CMOS有源移相器.基于Global Foundries 0.13μm CMOS工艺,设计了双相调制单元用于I路和Q路的0°/180°移相,以抑制时间调制所产生的基频和偶次边带;设计了矢量合成与复用放大单元,在不增加功耗的前提下提高了整个电路增益;设计了偏置与时序控制单元,通过对I路和Q路增益的时序控制,实现了STM.仿真结果表明：本设计在1.8 V电源电压下的功耗为15.8 mW,在3-dB带宽（13.2～20.7 GHz）内的增益为-3±1.5 dB;在10～25 GHz频段内,实现了小于0.1°的移相偏差均方根（root mean square,RMS）和小于0.02 dB的增益偏差RMS,相位分辨率达10 bit以上;最大无用边带（-7次边带）的功率抑制比为16.7 dBc.该有源移相器具有低成本、低功耗、低相位偏差、低幅度偏差和低插入损耗等性能,为时间调制阵列提供了一种新颖的单元结构.     

X波段GaN五位数字移相器MMIC的设计

采用0.5μm GaN HEMT工艺设计了X波段五位数字移相器的单片微波集成电路(MMIC),描述了移相器的设计过程,并进行了版图电磁仿真。该移相器采用高低通滤波器型网络和加载线型结构。利用电路匹配技术设计移相器电路的开关结构,将GaN器件的插入损耗从14 dB降至1 dB。版图仿真结果表明,在9.2 GHz~10.2 GHz频带范围内,均方根移相误差小于3.5°,插入损耗典型值为17.4 dB,回波损耗小于-12 dB,版图尺寸为5.0 mm×4.7 mm。