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PECVD生长nc—Si:H膜的沉积机理分析 总被引:3,自引:0,他引:3
nc-Si:H膜具有显著不同α-Si:H与μc-Si:H膜的新颖结构与物性。从热力学反应的基元过程出发,定性地分析了本征nc-Si:H与掺磷nc-Si(P):H膜的沉积机理,并提出了进一步改善膜层质量的新途径。 相似文献
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在等离子体化学气相沉积系统(PECVD)中,使用高氢稀释硅烷(SiH4)加乙烯(C2H4)为反应气氛制备了纳米硅碳(nc-SiCx^2H)薄膜,随着(C2H4+SiH4)/H2(Xg)从5%时,由于H蚀刻效应的减弱,薄膜的晶态率从48%下降到8%,平均晶粒尺寸在3.5-10nm。当Xg≥6%时,生成薄膜为非晶硅碳(a-SiCx^2H)薄膜。nc-SiCx^2H薄膜的电学性质具有与薄膜的晶态率紧密相 相似文献
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用a-Si:H薄膜经退火晶化成的多晶硅薄膜,其晶化温度、晶粒尺寸的电性能薄膜的初始结构有密切关系,而a-Si:H薄膜的切初结构依赖于沉积条件,用PCVD方法高速沉积的a-Si:H薄膜,经550℃的低温退火,可以制备平均晶粒尺寸为几面nm,最大晶粒尺寸为2μm,电导率为1.62(Ω.cm)^-1的优质多晶硅薄膜。 相似文献
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本文利用水热合成方法对MSnO3和MSn0.5Zr0.5(M=Sr,Ba)的合成进行了研究,并采用XRD、SE几ICP等进行产物进行了表征,结果表明:在M(OH)2.SnO2(呈SnO2+ZrO2)-KOH体系中,当KOH/Sn和KOH(Sn+Zr)≥30时,260℃下晶化5-7天,可获得MSnO3和MSn0.5O3纯相,在M(OH)3-(SnO2+ZrO3)-KOH-H2O体系中,可通过控制介质 相似文献
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利用多重散射团簇方法计算了单晶硅的K边NEXAFS谱,研究显示NEXAFS谱包含了导带态密度的信息。同时在模拟c-Si的团簇引入一定数量的空位,构造了纳米晶硅的模型,MSC计算证实吸收边位置上升约0.5eV,说明纳米晶硅的禁带比c-Si的展宽了。 相似文献
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本文利用水热合成方法对MSnO3和MSn(0.5)Zr(0.5)O3(M=Sr,Ba)的合成进行了研究,并采用XRD、SEM和ICP等方法对产物进行了表征,结果表明:在M(OH)2-SnO2(或SnO2+ZrO2)-KOH体系中,当KOH/Sn和KOH/(Sn+Zr)≥30时,260℃下晶化5~7天,可获得MSnO3和MSn(0.5)Zr(0.5)O3纯相,在M(OH)2-(SnO2+ZrO2)-KOH-H2O体系中,可通过控制介质碱度来获得MSnO3+MZrO3混合物和MSn(0.5)Zr(0.5)O3,并根据合成规律初步探讨了反应过程. 相似文献
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本文综述了纳米硅薄膜制备新技术的进展。着重介绍了高氢稀释硅烷蚀刻法,微波氢基团增强化学气相沉积,逐层法和高频数值等离子体化学气相沉积技术制备纳米硅薄膜的沉积过程和生长机制.本文指出氢基团为各项新技术发展的关键并将在今后纳米硅薄膜制备技术发展中起重要作用。 相似文献
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Preferred growth of nanocrystalline silicon (nc-Si) was first found in boron-doped hydrogenated nanocrystalline (nc-Si:H) films prepared using plasma-enhanced chemical vapor deposition system. The films were characterized by high-resolution transmission electron microscope, X-ray diffraction (XRD) spectrum and Raman Scattering spectrum. The results showed that the diffraction peaks in XRD spectrum were at 2θ≈47° and the exponent of crystalline plane of nc-Si in the film was (2 2 0). A considerable reason was electric field derived from dc bias made the bonds of Si-Si array according to a certain orient. The size and crystalline volume fraction of nc-Si in boron-doped films were intensively depended on the deposited parameters: diborane (B2H6) doping ratio in silane (SiH4), silane dilution ratio in hydrogen (H2), rf power density, substrate's temperature and reactive pressure, respectively. But preferred growth of nc-Si in the boron-doped nc-Si:H films cannot be obtained by changing these parameters. 相似文献
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1-IntroductionInordert0applythehydr0genatednan0crys-tallineSifilm(nc-Si:H)t0futureelectricaldevices,itisnecessarytofurtherimproveitselectricproperties.Accordingt0aSi:Hdopingtechnique,thedepositionofnc-Si:P:Hfilmwasstudiedandprimaryresults0fconductivityarerep0rted.2.ExperimentalAfterexperiments,followingparameterswerechosent0dep0sitnc-Si:P:Hfilms.Thegaseousphosphorus-dopingc0ncentrati0n(PH3/SiH4)is10-`~1;dilutionratio0fsaline(SiH4/H2)is0.1%~1%,substratetemperatureisfrom15O"Cto250"C.Th… 相似文献
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Richard Ritikos Boon Tong Goh Khairul Anuar Mat Sharif Muhamad Rasat Muhamad Saadah Abdul Rahman 《Thin solid films》2009,517(17):5092-4957
Multilayer thin films consisting of a-CNx:H/nc-Si:H layers prepared by radio-frequency plasma enhanced chemical vapour (r.f. PECVD) deposition technique were studied. High optical reflectivity at a specific wavelength is one of major concern for its application. By using this technique, a-CNx:H/nc-Si:H multilayered thin films (3-11 periods) were deposited on substrates of p-type (111) crystal silicon and quartz. These films were characterized using ultra-violet-visible-near infrared (UV-Vis-NIR) spectroscopy, Fourier transform infrared (FTIR) spectroscopy, field effect scanning electron microscopy (FESEM) and AUGER electron spectroscopy (AES). The multilayered films show high reflectivity and wide stop band width at a wavelength of approximately 650 ± 60 nm. The FTIR spectrum of this multilayered structure showed the formation of Si-H and Si-H2 bonds in the nc-Si:H layer and CC and N-H bonds in a-CNx:H layer. SEM image and AES reveal distinct formation of a-CNx:H and nc-Si:H layers in the cross section image with a decrease in interlayer cross contamination with increasing number of periods. 相似文献
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Hydrogenated nanocrystalline silicon (nc-Si:H) films were prepared by a pulsed-DC magnetron sputtering method under an atmosphere of hydrogen/argon mixture. The effects of hydrogen concentration on the structural and electrical properties of the films were systematically investigated using grazing incidence X-ray diffraction (GIXRD), Raman spectroscopy, and conductivity measurement. A threshold hydrogen concentration of about 70% was found necessary before any crystallinity was detectable. The deposition rate decreased monotonically with increasing hydrogen concentration, while the conductivity varied with crystallite size. The abnormally low conductivity level of these nc-Si:H films was due to the extraordinarily high defect density, which was attributed both to the enhanced ion bombardment from the pulsed-DC plasma and to the oxygen contamination from the target. 相似文献
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N.A. BakrA.M. Funde V.S. WamanM.M. Kamble R.R. HawaldarD.P. Amalnerkar V.G. SatheS.W. Gosavi S.R. Jadkar 《Thin solid films》2011,519(11):3501-3508
Structural, optical and electrical properties of hydrogenated nanocrystalline silicon (nc-Si:H) films, deposited from silane (SiH4) and argon (Ar) gas mixture without hydrogen by hot wire chemical vapor deposition (HW-CVD) method were investigated. Film properties are carefully and systematically studied as a function of argon dilution of silane (RAr). We observed that the deposition rate is much higher (4-23 Å/s) compared to conventional plasma enhanced chemical vapor deposited nc-Si:H films using Ar dilution of silane (0.5-0.83 Å/s). Characterization of these films with Raman spectroscopy revealed that Ar dilution of silane in HW-CVD endorses the growth of crystallinity and structural order in the nc-Si:H films. The Fourier transform infrared spectroscopic analysis showed that with increasing Ar dilution, the hydrogen bonding in the films shifts from di-hydrogen (Si-H2) and (Si-H2)n complexes to mono-hydrogen (Si-H) bounded species. The hydrogen content in the films increases with increasing Ar dilution and was found to be < 4 at.% over the entire range of Ar dilutions of silane studied. However, the band gap shows decreasing trend with increase in Ar dilution of silane and it has been attributed to the decrease in the percentage of the amorphous phase in the film. The microstructure parameter was found to be > 0.4 for the films deposited at low Ar dilution of silane and ~ 0.1 or even less for the films deposited at higher Ar dilution, suggesting that there is an enhancement of structural order and homogeneity in the film. From the present study it has been concluded that the Ar dilution of silane is a key process parameter to induce the crystallinity and to improve the structural ordering in the nc-Si:H films deposited by the HW-CVD method. 相似文献
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《Thin solid films》1999,337(1-2):59-62
A high degree of crystallinity is obtained in nc-Si:H films deposited by r.f. PECVD, produced from SiF4-H2-He mixtures. The amorphous-to-nanocrystalline transition is favored because of the presence of F atoms, which preferentially etch the amorphous phase. The addition of He to the SiF4-H2 gas mixture gives an increase of F and H atoms in the plasma, thus inducing higher crystallinity. A further improvement in the nc-Si:H film structure and properties is obtained by adjusting the r.f. power and the deposition temperature. Under optimized plasma conditions, substrate temperatures as low as 120°C can be reached for the deposition of nc-Si:H having 100% of crystallinity. 相似文献