Low and small resistance hole-injection barrier for NPB realized by wide-gap p-type degenerate semiconductor,LaCuOSe:Mg

LaCuOSe:Mg is a wide-gap p-type semiconductor with a high conductivity and a large work function. Potential of LaCuOSe:Mg as a transparent hole-injection electrode of organic light-emitting diodes (OLEDs) was examined by employing N,N′-diphenyl-N,N′-bis (1,1′-biphenyl)-4,4′-diamine (NPB) for a hole transport layer. Photoemission spectroscopy revealed that an oxygen plasma treated surface of LaCuOSe:Mg formed a hole-injection barrier as low as 0.3 eV, which is approximately a half of a conventional ITO/NPB interface. Hole-only devices composed of a LaCuOSe:Mg/NPB/Al structure showed a low threshold voltage ∼0.2 V and high-density current drivability of 250 mA cm⁻² at 2 V, which is larger by two orders of magnitude than that of ITO/NPB/Al devices. These results demonstrate that LaCuOSe:Mg has great potential as an efficient transparent anode for OLEDs and other organic electronic devices.     

Green and blue-green phosphorescent heteroleptic iridium complexes containing carbazole-functionalized β-diketonate for non-doped organic light-emitting diodes

Two novel iridium complexes both containing carbazole-functionalized β-diketonate, Ir(ppy)₂(CBDK) [bis(2-phenylpyridinato-N,C²)iridium(1-(carbazol-9-yl)-5,5-dimethylhexane-2,4-diketonate)], Ir(dfppy)₂(CBDK) [bis(2-(2,4-difluorophenyl)pyridinato-N,C²)iridium(1-(carbazol-9-yl)-5,5-dimethylhexane-2,4-diketonate)] and two reported complexes, Ir(ppy)₂(acac) (acac = acetylacetonate), Ir(dfppy)₂(acac) were synthesized and characterized. The electrophosphorescent properties of non-doped device using the four complexes as emitter, respectively, with a configuration of ITO/N,N′-diphenyl-N,N′-bis(1-naphthyl)-1,1′-diphenyl-4,4′-diamine (NPB) (20 nm)/iridium complex (20 nm)/2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) (5 nm)/tris(8-hydroxyquinoline)aluminum (AlQ) (45 nm)/Mg_0.9Ag_0.1 (200 nm)/Ag (80 nm) were examined. In addition, a most simplest device, ITO/Ir(ppy)₂(CBDK) (80 nm)/Mg_0.9Ag_0.1 (200 nm)/Ag (80 nm), and two double-layer devices with configurations of ITO/NPB (30 nm)/Ir(ppy)₂(CBDK) (30 nm)/Mg_0.9Ag_0.1 (200 nm)/Ag (80 nm) and ITO/Ir(ppy)₂(CBDK) (30 nm)/AlQ (30 nm)/Mg_0.9Ag_0.1 (200 nm)/Ag (80 nm) were also fabricated and examined. The results show that the non-doped four-layer device for Ir(ppy)₂(CBDK) achieves maximum lumen efficiency of 4.54 lm/W and which is far higher than that of Ir(ppy)₂(acac), 0.53 lm/W, the device for Ir(dfppy)₂(CBDK) achieves maximum lumen efficiency of 0.51 lm/W and which is also far higher than that of Ir(dfppy)₂(acac), 0.06 lm/W. The results of simple devices involved Ir(ppy)₂(CBDK) show that the designed complex not only has a good hole transporting ability, but also has a good electron transporting ability. The improved performance of Ir(ppy)₂(CBDK) and Ir(dfppy)₂(CBDK) can be attributed to that the bulky carbazole-functionalized β-diketonate was introduced, therefore the carrier transporting property was improved and the triplet–triplet annihilation was reduced.     

Versatile hole injection of VO2: Energy level alignment at N,N′-di(1-naphthyl)-N,N′-diphenyl-(1,1′-biphenyl)-4,4′-diamine/VO2/fluorine-doped tin oxide

Energy level alignments at the interface of N,N′-di(1-naphthyl)-N,N′-diphenyl-(1,1′-biphenyl)-4,4′-diamine (NPB)/VO₂/fluorine-doped tin oxide (FTO) were studied by photoemission spectroscopy. The overall hole injection barrier between FTO and NPB was reduced from 1.38 to 0.59 eV with the insertion of a VO₂ hole injection layer. This could allow direct hole injection from FTO to NPB through a shallow valence band of VO₂. Surprisingly, VO₂ can also act as a charge generation layer due to its small band gap of 0.80 eV. That is, its conduction band is quite close to the Fermi level, and thus electrons can be extracted from the highest occupied molecular orbital (HOMO) of NPB, which is equivalent to hole injection into the NPB HOMO.     

Detailed investigation of dependencies of photovoltaic performances of P3HT:PC61BM based solar cells on anodic work function modified by surface treatment of indium-tin-oxide electrode with benzenesulfonyl chloride derivatives

The photovoltaic (PV) characteristics of bulk-heterojunction (BHJ) solar cells based on poly(3-hexylthiophene) and [6,6]-phenyl-C₆₁-butyric acid methyl ester (P3HT:PC₆₁BM) were improved using indium-tin-oxide (ITO) anode electrodes modified chemically with CH₃O-, H-, Cl-, CF₃-, and NO₂-terminated benzenesulfonyl chlorides as a self-assembled monolayer (SAM). The ITO electrode surfaces were easily treated through the chemical modification of the reactive –SO₂Cl binding group, and the work function (WF) of the modified ITO was effectively changed depending on the permanent dipole moments introduced in the para-position of benzenesulfonyl chloride. We examined the correlation between the ITO WFs corrected by the change in the contact potential difference and the calculated dipole moments of the SAM models. Moreover, we examined the PV characteristics of the P3HT:PC₆₁BM based BHJ organic PV cells using the SAMs or poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS)-treated ITOs with different WFs lying within ±0.2 eV from the highest occupied molecular orbital (HOMO) level of P3HT. We found that the enhancement effect of the SAMs on the power-conversion efficiency (η_P) reached a maximum with Cl (η_P = 3.72%), and became larger than that of PEDOT:PSS (η_P = 3.62%). Two distinct J_sc dependencies, increasing and decreasing with the increasing WF of the anode ITO, were observed at higher and lower WFs than the HOMO level of the donor, respectively. Almost constant V_oc values (around 0.6 V) were observed with different SAM-modified ITOs, which suggested that Fermi level pinning was achieved by aligning the anode Fermi level and positive polaronic level of the donor polymer.     

Interface electronic structures of organic light-emitting diodes with WO3 interlayer: A study by photoelectron spectroscopy

The energy level alignment and chemical reaction at the interface between the hole injection and transport layers in an organic light-emitting diode (OLED) structure has been studied using in-situ X-ray and ultraviolet photoelectron spectroscopy. The hole injection barrier measured by the positions of the highest occupied molecular orbital (HOMO) for N,N′-bis(1-naphthyl)-N,N′-diphenyl-1,1′-biphenyl-4,4′-diamine (NPB)/indium tin oxide (ITO) was estimated 1.32 eV, while that with a thin WO₃ layer inserted between the NPB and ITO was significantly lowered to 0.46 eV. This barrier height reduction is followed by a large work function change which is likely due to the formation of new interface dipole. Upon annealing the WO₃ interlayer at 350 °C, the reduction of hole injection barrier height largely disappears. This is attributed to a chemical modification occurring in the WO₃ such as oxygen vacancy formation.     

A highly efficient OLED based on terbium complexes

A neutral ligand 9-(4-tert-butylphenyl)-3,6-bis(diphenylphosphineoxide)-carbazole (DPPOC) and its complex Tb(PMIP)₃DPPOC (A, where PMIP stands for 1-phenyl-3-methyl-4-isobutyryl-5-pyrazolone) were synthesized. DPPOC has a suitable lowest triplet energy level (24,691 cm^?1) for the sensitization of Tb(III) (⁵D₄: 20,400 cm^?1) and a significantly higher thermal stability (glass transition temperature 137 °C) compared with the familiar ligand triphenylphosphine oxide (TPPO). Experiments revealed that the emission layer of the Tb(PMIP)₃DPPOC film could be prepared by vacuum co-deposition of the complex Tb(PMIP)₃(H₂O)₂ (B) and DPPOC (molar ratio = 1:1). The electroluminescent (EL) device ITO/N,N′-diphenyl-N,N′-bis(1-naphthyl)-1,1′-diphenyl-4,4′-diamine (NPB; 10 nm)/Tb(PMIP)₃ (20 nm)/co-deposited Tb(PMIP)₃DPPOC (30 nm)/2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP; 10 nm)/tris(8-hydroxyquinoline) (AlQ; 20 nm)/Mg_0.9Ag_0.1 (200 nm)/Ag (80 nm) exhibited pure emission from terbium ions, even at the highest current density. The highest efficiency obtained was 16.1 lm W^?1, 36.0 cd A^?1 at 6 V. At a practical brightness of 119 cd m^?2 (11 V) the efficiency remained above 4.5 lm W^?1, 15.7 cd A^?1. These values are a significant improvement over the previously reported Tb(PMIP)₃(TPPO)₂ (C).     

Bulk and interface properties of molybdenum trioxide-doped hole transporting layer in organic light-emitting diodes

Effects of doping molybdenum trioxide (MoO₃) in N,N′-diphenyl-N,N′-bis(1,1′-biphenyl)-4,4′-diamine (NPB) are studied at various thicknesses of doped layer (25–500 Å) by measuring the current–voltage characteristics, the capacitance–voltage characteristics and the operating lifetime. We formed charge transfer complex of NPB and MoO₃ by co-evaporation of both materials to achieve higher charge density, lower operating voltage, and better reliability of devices. These improved performances may be attributed to both bulk and interface properties of the doped layer. The authors demonstrated that the interface effects play more important role in lowering the operating voltage and increasing the lifetime.     

Optoelectronic characteristics of MEH-PPV polymer LEDs with thin,doped composition-graded a-SiC:H carrier injection layers

The optoelectronic characteristics of poly(2-methoxy-5-(2′ethyl-hexoxy)-1,4-phenylene-vinylene) (MEH-PPV) polymer LEDs (PLEDs) have been improved by employing thin doped composition-graded (CG) hydrogenated amorphous silicon–carbide (a-SiC:H) films as carrier injection layers and O₂-plasma treatment on indium–tin-oxide (ITO) transparent electrode, as compared with previously reported ones having doped constant-optical-gap a-SiC:H carrier injection layers. For PLEDs with an n-type a-SiC:H electron injection layer (EIL) only, the electroluminescence (EL) threshold voltage and brightness were improved from 7.3 V, 3162 cd/m² to 6.3 V, 5829 cd/m² (at a current density J = 0.6 A/cm²), respectively, by using the CG technique. The enhancement of EL performance of the CG technique was due to the increased electron injection efficiency resulting from a smoother barrier and reduced recombination of charge carriers at the EIL and MEH-PPV interface. Also, surface modification of the ITO transparent electrode by O₂-plasma treatment was used to further improve the EL threshold voltage and brightness of this PLED to 5.1 V, 6250 cd/m² (at J = 0.6 A/cm²). Furthermore, by employing the CG n[p]-a-SiC:H film as EIL [hole injection layer (HIL)] and O₂-plasma treatment on the ITO electrode, the brightness of PLEDs could be enhanced to 9350 cd/m² (at a J = 0.3 A/cm²), as compared with the 6450 cd/m² obtained from a previously reported PLED with a constant-optical-gap n-a-SiCGe:H EIL and p-a-Si:H HIL.     

New triphenylamine-based poly(amine-imide)s with carbazole-substituents for electrochromic applications

A new carbazole-derived triphenylamine-containing diimide-diacid monomer (5), 4,4′-bis(trimellitimido)-4″-N-carbazolytriphenylamine, is prepared by the condensation of 4,4′-diamino-4″-N-carbazolytriphenylamine (4) and two molar equivalents of trimellitic anhydride (TMA). A series of new poly(amide-imide)s (PAIs) 7a–7d with carbazole-substituted triphenylamine units are prepared by direct polymerization from the new diimide-diacid (5) and various aromatic diamines (6a–6d). The PAIs shows high glass transition temperature between 269 and 297 °C, and high 5% weight loss temperature between 526 and 561 °C under nitrogen environment. Cyclic voltammograms of the PAIs films, which are casted onto the indium–tin oxide (ITO)-coated glass substrate, exhibit two reversible oxidation redox couples at 1.05–1.08 V and 1.38–1.46 V under an anodic sweep. The PAI-7a film reveals excellent stability of electrochromic characteristics for the radical cations generated, changing color from original pale yellowish neutral form to the green and then to dark blue oxidized forms. Furthermore, the anodically coloring of PAI-7a shows high coloration efficiency (CE = 205 cm²/C), high contrast of optical transmittance change (ΔT = 80% at 776 nm) and long-term redox reversibility.     

Hole mobilities of thermally polymerized triaryldiamine derivatives and their application as hole-transport materials in organic light-emitting diodes (OLEDs)

This paper describes the synthesis of three triaryldiamine derivatives presenting two thermally polymerizable trifluorovinyl ether groups that can be polymerized through thermal curing to form perfluorocyclobutyl (PFCB) polymers. These PFCB polymers, studied using time-of-flight techniques for the first time, exhibited remarkable non-dispersive hole-transport properties, with values of μ_h of ca. 10^?4 cm² V^?1 s^?1. When we employed these thermally polymerized polymers as hole-transport layers (HTLs) in electroluminescence devices containing tris(8-hydroxyquinolate) aluminum (Alq₃) as the emission layer, we obtained high current densities (ca. 3400 mA cm^?2), impressive brightnesses (5 × 10⁴ cd m^?2), and high external quantum efficiencies (EQEs = 1.43%). These devices exhibited the same turn-on voltage, but higher EQEs, relative to those incorporating the vacuum-processed model compound N,N′-di(1-naphthyl)-N,N′-diphenylbenzidine (α-NPD) (EQE = 1.37%) as the HTL under the same device structure.     

Fine tuning hole injection for high-performance polyfluorene-based blue emitting device by adjusting work function of anode via deposition of CFx layer with proper ionization potential on indium tin oxide

By introducing CF_x thin film as hole injection layer on top of indium tin oxide (ITO) anode via plasma polymerization of CHF₃, the device with poly(9,9-dioctylfluorene) (PFO) as emitting layer, ITO/CF_x(35 W)/PFO/CsF/Ca/Al, is prepared. At the optimal C/F atom ratio using the radio frequency power 35 W, the device performance is optimal having the maximum current efficiency 3.1 cd/A and maximum brightness 8400 cd/m². This is attributed to a better balance between hole and electron fluxes, resulting from a decrease in hole injection barrier as manifested by ultraviolet photoelectron spectroscopy and scanning surface potential microscopy.     

Synthesis and electroluminescent properties of highly efficient anthracene derivatives with bulky side groups

Three new asymmetric light emitting organic compounds were synthesized with diphenylamine or triphenylamine side groups; 10-(3,5-diphenylphenyl)-N,N-diphenylanthracen-9-amine (MADa), 4-(10-(3,5-diphenylphenyl)anthracen-9-yl)-N,N-diphenylaniline (MATa), and 4-(10-(3′,5′-diphenylbiphenyl-4-yl)anthracen-9-yl)-N,N-diphenylaniline (TATa). MATa and TATa had a PL_max at 463 nm in the blue region, and MADa had a PL_max at 498 nm. MADa and MATa had T_g values greater than 120 °C, and TATa had a T_g of 139 °C. EL devices containing the synthesized compounds were fabricated in the configuration: ITO/4,4′,4′′-tris(N-(2-naphthyl)-N-phenyl-amino)-triphenylamine (2-TNATA) (60 nm)/N,N′-bis(naphthalen-1-yl)-N,N′-bis(phenyl)benzidine (NPB) (15 nm)/MADa or MATa or TATa or 9,10-di(2′-naphthyl)anthracene (MADN) (30 nm)/8-hydroxyquinoline aluminum (Alq₃) (30 nm)/LiF (1 nm)/Al (200 nm). The efficiency and color coordinate values (respectively) were 10.3 cd/A and (0.199, 0.152; bluish-green) for the MADa device, 4.67 cd/A and (0.151, 0.177) for the MATa device, and 6.07 cd/A and (0.149, 0.177) for the TATa device. The TATa device had a high external quantum efficiency (EQE) of 6.19%, and its luminance and power efficiencies and life-time were more than twice those of the MADN device.     

High-efficiency fluorescent white organic light-emitting device with double emissive layers

The authors demonstrate a fluorescent white organic light-emitting device (WOLED) with double emissive layers. The yellow and blue dyes, 5,6,11,12-tetraphenylnaphthacene and N-(4-((E)-2-(6-((E)-4-(diphenylamino)styryl)naphthalen-2-yl)vinyl)phenyl)-N-phenylbenzenamine, are doping into the same conductive host material, N,N′-dicarbazolyl-4-4′-biphenyl). The maximum luminance and power efficiency of the WOLED are 14.6 cd/A and 9.5 lm/W at 0.01 mA/cm², with the maximum brightness of 20 100 cd/m² at 17.8 V. The Commission International de L’Éclairage coordinates change slightly from (0.27, 0.37) to (0.28, 0.36), as the applied voltage increases from 6 V to 16 V. The high efficiencies can be attributed to the balance between holes and electrons.     

Organic alternating current electroluminescence device based on 4,4′-bis(N-phenyl-1-naphthylamino) biphenyl/1,4,5,8,9,11-hexaazatriphenylene charge generation unit

An organic alternating current electroluminescence (OACEL) device based on 4,4′-bis(N-phenyl-1-naphthylamino) biphenyl (NPB)/1,4,5,8,9,11-hexaazatriphenylene (HAT-CN)/tris(8-hydroxy-quin-olinato) aluminum (Alq₃) doped with cesium carbonate (Cs₂CO₃) internal charge generation unit is demonstrated. Maximum luminance of 299 cd/m² is observed for Alq₃ doped with 10-(2-Benzothiazolyl)-2,3,6,7-tetrahydro-1,1,7,7-tetramethyl-1H,5H, 11H-(1) benzopyropyrano (6,7-8-I,j)quinolizin-11-one (C545T) fluorescent emission layer when driven with a peak–peak voltage of 80 V at 120 kHz. The key charge-generation role of NPB/HAT-CN interface is studied experimentally. Furthermore, influence of evaporation sequence of this internal charge generation unit on OACEL performance is investigated. This work demonstrated that the undoped charge generation unit – NPB/HATCN, can also be a good candidate for charge generation unit of OACEL device.     

Highly efficient two component phosphorescent organic light-emitting diodes based on direct hole injection into dopant and gradient doping

A series of two component phosphorescent organic light-emitting diodes (PHOLEDs) combing the direct hole injection into dopant strategy with a gradient doping profile were demonstrated. The dopant, host, as well as molybdenum oxide (MoO₃)-modified indium tin oxide (ITO) anode were investigated. It is found that the devices ITO/MoO₃ (0 or 1 nm)/fac-tris(2-phenylpyridine)iridium [Ir(ppy)₃]:1,3,5-tris(N-phenylbenzimidazole-2-yl)benzene (TPBi) (30 → 0 wt%, 105 nm)/LiF (1 nm)/Al (100 nm) show maximum external quantum efficiency (EQE) over 20%, which are comparable to multi-layered PHOLEDs. Moreover, the systematic variation of the host from TPBi to 4,7-diphenyl-1,10-phenanthroline (Bphen), dopant from Ir(ppy)₃ to bis(2-phenylpyridine)(acetylacetonate)iridium [Ir(ppy)₂(acac)], and anodes between ITO and ITO/MoO₃ indicates that balancing the charge as well as controlling the charge recombination zone play critical roles in the design of highly efficient two component PHOLEDs.     

Solvent–vapor induced morphology reconstruction for efficient PCDTBT based polymer solar cells

This paper reports polymer solar cells with a 7% power conversion efficiency (PCE) based on bulk heterojunction (BHJ) composites of the alternating co-polymer, poly[N-9′′-hepta-decanyl-2,7-carbazole-alt-5,5-(4′,7′-di-2-thienyl-2′,1′,3′-benzothiadiazole) (PCDTBT), and the fullerene derivative [6,6]-phenyl C₇₁-butyric acid methyl ester (PC₇₁BM). As confirmed by transmission electron microscopy, solvent–vapor annealing (SVA) of the thin (70 nm) BHJ photoactive layer by exposure to chloroform vapor, for a short period of time (30 s) after deposition, leads to reconstructed nanoscale morphology of donor/acceptor domains, well-dispersed fullerene phase and effective photo-absorption of BHJ. Consequently, SVA-reconstructed devices with a PCDTBT:PC₇₁BM blend ratio of 1:5 (wt%) exhibit ～50% improvement in PCE, with short-circuit current J_sc = 15.65 mA/cm², open-circuit voltage V_oc = 0.87 V, and PCE = 7.03%, in comparison to those of the 1:4 (wt%) blends with SVA treatment.     

Four-wavelength white organic light-emitting diodes using 4,4′-bis-[carbazoyl-(9)]-stilbene as a deep blue emissive layer

White organic light-emitting diodes (WOLEDs) with four wavelengths were fabricated by using three doped layers, which were obtained by separating recombination zones into three emitter layers. Among these emitters, blue emissions with two wavelengths (456 and 487 nm) were occurred in the 4,4′-bis(carbazoyl-(9))-stilbene (BCS) host doped with a perylene dye. Also, a green emission was originated from the tris(8-quinolinolato)aluminum (III) (Alq₃) host doped with a green fluorescent of 10-(2-benzothiazolyl)-1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H,11H-[1]benzopyrano [6,7,8-ij]-quinolizin-11-one (C545T) dye. Finally, an orange emission was obtained from the N,N′-bis(1-naphthyl)-N,N′-diphenyl-1,1′-biphenyl-4,4′-diamine (NPB) host doped with a 4-(dicyanomethylene)-2-tert-butyl-6-(1,1,7,7-tetramethyljulolidyl-9-enyl)-4H-pyran (DCJTB) dye. The white light could be emitted by simultaneously controlling the emitter thickness and concentration of fluorescent dyes in each emissive layer, resulting in partial excitations among those three emitter layers. Electroluminescent spectra of the device obtained in this study were not sensitive to driving voltage of the device. Also, the maximum luminance for the white OLED with the CIE coordinate of (0.34, 0.34) was 56,300 cd/m² at the applied bias voltage of 11.6 V. Also, its external quantum and the power efficiency at about 100 cd/m² were 1.68% and 2.41 lm/W, respectively.     

Post-fabrication electric field and thermal treatment of polymer light emitting diodes and their photovoltaic properties

This work presents post-fabrication electric field and heat treatment methods developed for polymer light emitting diodes (PLEDs), which have degraded due to exposure to oxygen and water vapors during low-cost fabrication performed in standard room conditions. Investigated PLEDs have structures composed of indium tin oxide (ITO), poly(3,4-ethylenedioxythiophene), poly(styrenesulfonate), (PEDOT:PSS), poly[2-methoxy-5-(2′-ethyl-hexyloxy)-1,4-phenylene vinylene] (MEH-PPV), and aluminum (Al). Heat treatment restores the light emitting function of dysfunctional PLEDs but also causes a high turn-on voltage of 10 V. Electric field treatment utilizing ?1 V reduces this high turn-on voltage to 3 V. This procedure also improves open circuit voltages from 5 mV to 55 mV, and short circuit currents from 0.5 nA to 5 nA when PLEDs are operated as photovoltaic cells under a light intensity of 500 mW/m². Repeated I–V sweep measurements additionally show improved stability and uniformity. The reasons for these improvements, the usage of an optimal treatment temperature of 130 °C, and the usage of treatment voltages of 0 and ?1 V are discussed.     

Influence of aluminium electrode preparation on PCE values of polymeric solar cells based on P3HT and PCBM

The main goal of the paper was investigation of influence of aluminum electrode preparation via thermal evaporation (TE) and the magnetron sputtering (MS) on power conversion efficiency (PCE) of polymeric solar cells. The photovoltaic properties of such three kinds devices based on poly(3-hexylthiophene-2,5-diyl) (P3HT) as ITO/P3HT/Al, ITO/P3HT:PCBM (1:1, w/w)/Al and ITO/PEDOT:PSS/P3HT:PCBM (1:1, w/w)/Al were investigated. For the constructed devices impedance spectroscopy were analyzed. For devices lack of PEDOT:PSS layer or lack of PCBM, photovoltaic parameters were very low and similar to the parameters obtained for device with Al electrode prepared by magnetron sputtering. The devices comprising PEDOT:PSS with P3HT:PCBM showed the best photovoltaic parameters such as a V_OC of 0.60 V, J_SC of 4.61 mA/cm², FF of 0.21, and PCE of 5.7 × 10^?1%.     

Stably anodic green electrochromic aromatic poly(amine–amide–imide)s: Synthesis and electrochromic properties

A series of new poly(amine–amide–imide)s with pendent 4-methoxy-substituted triphenylamine (TPA) units having inherent viscosities of 0.35–0.45 dL/g were prepared from various aromatic bis(trimellitimide)s and the 4-methoxy-substituted triphenylamine-based aromatic diamine, 4,4′-diamino-4″-methoxytriphenylamine (I), by direct polycondensation. All the polymers are readily soluble in polar organic solvents. Flexible and amorphous films of these poly(amine–amide–imide)s could be obtained by solution-casting, and showed excellent thermal stability, 10% weight-loss temperatures in excess of 515 °C, and char yields at 800 °C in nitrogen higher than 58% associated with high glass-transition temperatures (297–305 °C). These polymers exhibited a maximum UV–vis absorption at 302–304 nm with fluorescence emission maxima around 360–376 nm in N-methyl-2-pyrrolidinone (NMP) solution. The hole-transporting and electrochromic properties were examined by electrochemical and spectroelectrochemical methods. Cyclic voltammograms of the poly(amine–amide–imide) films cast onto an indium–tin oxide (ITO)-coated glass substrate exhibit a reversible oxidation at 0.79–0.80 V vs. Ag/AgCl in acetonitrile solution, and reveal good stability of electrochromic characteristics with a color change from yellow to green at applied potentials ranging from 0.00 to 0.95 V. These anodically polymeric electrochromic materials not only showed excellent reversible electrochromic stability with good green coloration efficiency (CE = 395 cm²/C) but also exhibited high contrast of optical transmittance change (ΔT%) up to 78% in 768 nm. After over 100 cyclic switches, the polymer films still exhibited stable electrochromic characteristics.