Solution processable poly(2,5-dialkyl-2,5-dihydro-3,6-di-2-thienyl-pyrrolo[3,4-c]pyrrole-1,4-dione) for ambipolar organic thin film transistors

Solution processable diketopyrrolopyrrole (DPP)-bithiophene polymers (PDBT) with long branched alkyl side chains on the DPP unit are synthesized. These polymers have favourable highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) energy levels for the injection and transport of both holes and electrons. Organic thin film transistors (OTFTs) using these polymers as semiconductors and gold as source/drain electrodes show typical ambipolar characteristics with very well balanced high hole and electron mobilities (μ_h = 0.024 cm² V^?1 s^?1 and μ_e = 0.056 cm² V^?1 s^?1). These simple and high-performing polymers are promising materials for ambipolar organic thin film transistors for low-cost CMOS-like logic circuits.     

Fabrication of single crystal field-effect transistors with phenacene-type molecules and their excellent transistor characteristics

Single crystal field-effect transistors (FETs) using [6]phenacene and [7]phenacene show p-channel FET characteristics. Field-effect mobilities, μs, as high as 5.6 × 10^?1 cm² V^?1 s^?1 in a [6]phenacene single crystal FET with an SiO₂ gate dielectric and 2.3 cm² V^?1 s^?1 in a [7]phenacene single crystal FET were recorded. In these FETs, 7,7,8,8-tetracyanoquinodimethane (TCNQ) was inserted between the Au source/drain electrodes and the single crystal to reduce hole-injection barrier heights. The μ reached 3.2 cm² V^?1 s^?1 in the [7]phenacene single crystal FET with a Ta₂O₅ gate dielectric, and a low absolute threshold voltage |V_TH| (6.3 V) was observed. Insertion of 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F₄TCNQ) in the interface produced very a high μ value (4.7–6.7 cm² V^?1 s^?1) in the [7]phenacene single crystal FET, indicating that F₄TCNQ was better for interface modification than TCNQ. A single crystal electric double-layer FET provided μ as high as 3.8 × 10^?1 cm² V^?1 s^?1 and |V_TH| as low as 2.3 V. These results indicate that [6]phenacene and [7]phenacene are promising materials for future practical FET devices, and in addition we suggest that such devices might also provide a research tool to investigate a material’s potential as a superconductor and a possible new way to produce the superconducting state.     

Low power flexible organic thin film transistors with amorphous Ba0.7Sr0.3TiO3 gate dielectric grown by pulsed laser deposition at low temperature

We deposited amorphous Ba_0.7Sr_0.3TiO₃ (BST) on silicon and plastic substrate under 110 °C by pulsed laser deposition (PLD) and use it as the dielectric of the organic transistor. Depends on the thickness of BST layer, the highest mobility of the devices can achieve 1.24 cm² V^?1 s^?1 and 1.01 cm² V^?1 s^?1 on the silicon and polyethylene naphthalate (PEN) substrate, respectively. We also studied the upward and downward bending tests on the transistors and the dielectric thin films. We found that the BST dielectric pentacene transistor can maintain the mobility at 0.5 cm² V^?1 s^?1 or higher while the bending radius is around 3 mm in both upward and downward bending. Our finding demonstrates the potential application of PLD growth high-k dielectric in the large area organic electronics devices.     

Solution-processed single-crystalline organic transistors on patterned ultrathin gate insulators

Single-crystalline organic transistors of 3,11-didecyl-dinaphtho[2,3-d:2′,3′-d′]benzo[1,2-b:4,5-b′]dithiophene (C₁₀-DNBDT-NW) and 2,9-didecyl-dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene (C₁₀-DNTT) were fabricated by solution processes on top of the patterned hybrid ultrathin gate dielectrics consisting of 3.6 nm-thick aluminum oxide and self-assembled monolayers (SAMs). Due to the excellent crystallinity of the channel films, bottom-gate and top-contact field-effect transistors exhibited the average field-effect mobility of 3.7 cm²/V s and 4.3 cm²/V s for C₁₀-DNBDT-NW and C₁₀-DNTT, respectively. These are the first successful devices of solution-processed single-crystalline transistors on ultrathin gate dielectrics with the mobility above 1 cm²/V s, opening the way to develop low-power-consumption and high-performance printed circuits.     

Efficient hole-transporter for phosphorescent organic light emitting diodes with a simple molecular structure

N,N-diphenyl-4-(quinolin-8-yl)aniline (SQTPA), which composes a triphenylamine group and a quinoline group, has been synthesized and employed as a hole-transporter in phosphorescent OLEDs. It has been proved that SQTPA has efficient hole-transport property with a hole-mobility of 3.60 × 10⁻⁵ cm²/V s at the electric field of 800 (V/cm)^1/2, which is higher than that of NPB (1.93 × 10⁻⁵ cm²/V s). Blue, orange and green phosphorescent OLEDs have been fabricated based on FIrpic, Ir(2-phq)₃, Ir(ppy)₃ with typical structures by using SQTPA as the hole-transporter. The SQTPA-based devices show maximum external quantum efficiencies and power efficiencies of 17.5%, 32.5 lm/W for blue, 12.3%, 20.5 lm/W for orange and 20.3%, 64.5 lm/W for green. The performances of SQTPA-based devices are much better than that of NPB-based phosphorescent OLEDs with similar structures. Thought of its very simple molecular structure and easy synthetic route, SQTPA should be an efficient hole-transporter for phosphorescent OLEDs.     

Hole mobilities of thermally polymerized triaryldiamine derivatives and their application as hole-transport materials in organic light-emitting diodes (OLEDs)

This paper describes the synthesis of three triaryldiamine derivatives presenting two thermally polymerizable trifluorovinyl ether groups that can be polymerized through thermal curing to form perfluorocyclobutyl (PFCB) polymers. These PFCB polymers, studied using time-of-flight techniques for the first time, exhibited remarkable non-dispersive hole-transport properties, with values of μ_h of ca. 10^?4 cm² V^?1 s^?1. When we employed these thermally polymerized polymers as hole-transport layers (HTLs) in electroluminescence devices containing tris(8-hydroxyquinolate) aluminum (Alq₃) as the emission layer, we obtained high current densities (ca. 3400 mA cm^?2), impressive brightnesses (5 × 10⁴ cd m^?2), and high external quantum efficiencies (EQEs = 1.43%). These devices exhibited the same turn-on voltage, but higher EQEs, relative to those incorporating the vacuum-processed model compound N,N′-di(1-naphthyl)-N,N′-diphenylbenzidine (α-NPD) (EQE = 1.37%) as the HTL under the same device structure.     

Dependence of annealing on stability of transparent amorphous InGaZnO thin film transistor

Bottom-gate transparent IGZO–TFT had been successfully fabricated at relatively low temperature (200 °C). The devices annealing for 4 h at 200 °C exhibit good electrical properties with saturation mobility of 8.2 cm²V^?1s^?1, subthreshold swing of 1.0 V/dec and on/off current ratio of 5×10⁶. The results revealed that the stability of TFT devices can be improved remarkably by post-annealing treatment. After applying positive gate bias stress of 20 V for 5000 s, the device annealing for 1 h shows a larger positive V_th shift of 4.7 V. However, the device annealing for 4 h exhibits a much smaller V_th shift of 0.04 V and more stable.     

Highly efficient green phosphorescent organic light emitting diodes with simple structure

A series of simple structures is investigated for realization of the highly efficient green phosphorescent organic light emitting diodes with relatively low voltage operation. All the devices were fabricated with mixed host system by using 1,1-bis[(di-4-tolylamino)phenyl]cyclohexane (TAPC) and 1,3,5-tri(p-pyrid-3-yl-phenyl)benzene (TpPyPB) which were known to be hole and electron type host materials due to their great hole and electron mobilities [μ_h(TAPC): 1 × 10^?2 cm²/V s and μ_e(TpPyPB): 7.9 × 10^?3 cm²/V s] [1]. The optimized device with thin TAPC (5–10 nm) as an anode buffer layer showed relatively high current and power efficiency with low roll-off characteristic up to 10,000 cd/m². The performances of the devices; with buffer layer were compared to those of simple devices with single layer and three layers. Very interestingly, the double layer device with TAPC buffer layer showed better current and power efficiency behavior compared to that of three layer device with both hole and electron buffer layers (TAPC, TpPyPB, respectively).     

The influence of high energy electron irradiation on the Schottky barrier height and the Richardson constant of Ni/4H-SiC Schottky diodes

The influence of high energy electron (HEE) irradiation from a Sr-90 radio-nuclide on n-type Ni/4H–SiC samples of doping density 7.1×10¹⁵ cm⁻³ has been investigated over the temperature range 40–300 K. Current–voltage (I–V), capacitance–voltage (C–V) and deep level transient spectroscopy (DLTS) were used to characterize the devices before and after irradiation at a fluence of 6×10¹⁴ electrons-cm⁻². For both devices, the I–V characteristics were well described by thermionic emission (TE) in the temperature range 120–300 K, but deviated from TE theory at temperature below 120 K. The current flowing through the interface at a bias of 2.0 V from pure thermionic emission to thermionic field emission within the depletion region with the free carrier concentrations of the devices decreased from 7.8×10¹⁵ to 6.8×10¹⁵ cm⁻³ after HEE irradiation. The modified Richardson constants were determined from the Gaussian distribution of the barrier height across the contact and found to be 133 and 163 A cm⁻² K⁻² for as-deposited and irradiated diodes, respectively. Three new defects with energies 0.22, 0.40 and 0.71 eV appeared after HEE irradiation. Richardson constants were significantly less than the theoretical value which was ascribed to a small active device area.     

Hybrid dual gate ferroelectric memory for multilevel information storage

Here, we report hybrid organic/inorganic ferroelectric memory with multilevel information storage using transparent p-type SnO semiconductor and ferroelectric P(VDF-TrFE) polymer. The dual gate devices include a top ferroelectric field-effect transistor (FeFET) and a bottom thin-film transistor (TFT). The devices are all fabricated at low temperatures (∼200 °C), and demonstrate excellent performance with high hole mobility of 2.7 cm² V⁻¹ s⁻¹, large memory window of ∼18 V, and a low sub-threshold swing ∼−4 V dec⁻¹. The channel conductance of the bottom-TFT and the top-FeFET can be controlled independently by the bottom and top gates, respectively. The results demonstrate multilevel nonvolatile information storage using ferroelectric memory devices with good retention characteristics.     

In situ modification of low-cost Cu electrodes for high-performance low-voltage pentacene thin film transistors (TFTs)

We demonstrate low-voltage pentacene thin film transistors (TFTs) using in situ modified low-cost Cu (M-Cu) as source–drain (S/D) electrodes and solution-processed high capacitance (200 nF/cm²) gate dielectrics. Under a gate voltage of ?3 V, the device with M-Cu electrodes shows a much higher apparent mobility (1.0 cm²/V s), a positively shifted threshold voltage (?0.62 V), a lower contact resistance (0.11 MΩ) and a larger transconductance (12 μS) as compared to the device with conventional Au electrodes (corresponding parameters are 0.71 cm²/V s, ?1.44 V, 0.41 MΩ, and 5.7 μS, respectively). The enhancement in the device performance is attributed to the optimized interface properties between S/D electrodes and pentacene. Moreover, after encapsulation the M-Cu electrodes with a thin layer of Au in the aim of suppressing unfavorable surface oxidation, the electronic characteristics of the device are further improved, and highly enhanced apparent mobility (2.3 cm²/V s) and transconductance (19 μS) can be achieved arising from the increased conductivity of the electrode itself. Our study provides a simple and feasible approach to achieve high performance low-voltage OTFTs with low-cost S/D electrodes, which is desirable for large area applications.     

2 MeV ion irradiation effects on AlGaN/GaN HFET devices

AlGaN/GaN heterostructure field effect transistors (HFETs) were irradiated with 2 MeV protons, carbon, oxygen, iron and krypton ions with fluences ranging from 1 × 10⁹ cm^?2 to 1 × 10¹³ cm^?2. DC, pulsed I–V characteristics, loadpull and S-parameters of the AlGaN HFET devices were measured before and after irradiation. In parallel, a thick GaN reference layer was also irradiated with the same ions and was characterized by X-ray diffraction, photoluminescence, Hall measurements before and after irradiation. Small changes in the device performance were observed after irradiation with carbon and oxygen at a fluence of 5 × 10¹⁰ cm^?2. Remarkable changes in device characteristics were seen at a fluence of 1 × 10¹² cm^?2 for carbon, oxygen, iron and krypton irradiation. Similarly, remarkable changes were also observed in the GaN layer for irradiations with fluence of 1 × 10¹² cm^?2. The results found on devices and on the GaN layer were compared and correlated.     

Tetrasubstituted-pyrene derivatives for electroluminescent application

Tetrasubstituted-pyrenes containing peripheral diarylamines (1–4) or fluorenes (5–6) have been synthesized. These compounds are highly fluorescent and possess high morphological stability and thermal stability. Compounds containing peripheral arylamines (1–3) can be used as the hole-transport and green-emitting materials for two-layered electroluminescent devices. Compounds with peripheral fluorenes (5–6) are efficient blue emitters and exhibit ambipolar carrier-transport characteristics with high electron mobilities (10⁻³–10⁻² cm²/V s) and high hole mobilities (>10⁻³ cm²/V s). Non-doped blue-emitting devices with promising electroluminescent performance (i.e., high efficiency and narrow/saturated emission) can be achieved using fluorene–substituted pyrenes as either the hole-transport/emitting layer or the electron-transport/emitting layer in the two-layered devices.     

Solution-processed organic field-effect transistors composed of poly(4-styrene sulfonate) wrapped multiwalled carbon nanotube source/drain electrodes

Multiwalled carbon nanotubes (MWNTs) were solubilized in water by wrapping them noncovalently with poly(4-styrene sulfonate) (PSS). The PSS-wrapped MWNTs exhibited a high conductivity (2.0 × 10² S/cm) when compared to other solution-processed electrodes. Ultraviolet photoelectron spectroscopy results show the PSS-wrapped nanotubes have a work function of 4.83 eV, which is 0.36 eV higher than that of untreated MWNTs. We fabricated triisopropylsilylethynyl pentacene field-effect transistors (FETs) using the PSS-wrapped MWNTs as source/drain electrodes and found that the field-effect mobility of the thus obtained devices was 0.043 cm² V^?1 s^?2. This mobility is four times higher than that of similar FETs containing gold electrodes (0.011 cm² V^?1 s^?2).     

Organic field-effect transistors based on J-aggregate thin films of a bisazomethine dye

We report on the fabrication and the characterization of p-type organic field-effect transistors based on vapor-deposited J-aggregate bisazomethine dye thin films. The absorption spectra of this non-ionic organic semiconductor in the solid state show a strong influence of the film thickness on the J-aggregate formation. However, the electrical characteristics of the devices demonstrate that the hole transport properties do not vary significantly in films thicker than 100 nm. This is due to the fact that the J-aggregates are formed in this material at the surface of the crystalline grains and do not influence the semiconductor/gate dielectric interface and the charge transport properties of the devices. Hole field-effect mobilities as high as 2.4 × 10^?4 cm² V^?1 s^?1 were obtained and could be slightly improved by a solvent vapor treatment due to changes in the film crystallinity. Overall, this study demonstrates that J-aggregate bisazomethine dye thin films are good candidates for the realization of organic electronic devices.     

A study of charge transport in a novel electroluminescent poly(phenylene vinylene-co-fluorenylene vinylene) based π-conjugated polymer

The charge transport properties in a novel electroluminescent poly{[2-(4′,5′-bis(3″-methylbutoxy)-2′-p-methoxy-phenyl)phenyl-1,4-phenylene vinylene]-co-(9,9-dioctyl-2,7-fluorenylene vinylene)} (BPPPV-PF) have been studied using a time-of-flight (TOF) photoconductivity technique. The TOF transients for holes were recorded over a range of temperatures (207–300 K) and electric fields (1.5 × 10⁵–6.1 × 10⁵ V/cm). The hole transport in this polymer was weakly dispersive in nature with a mobility at 300 K of 5 × 10⁻⁵ cm²/V s at 2.5 × 10⁵ V/cm. This increased to 8.4 × 10⁻⁵ cm²/V s at 6.1 × 10⁵ V/cm. The temperature and field dependence of charge mobility has been analyzed using the disorder formalisms (Bässler’s Gaussian disorder model (GDM) and correlated disorder model (CDM)). The fit with Gaussian disorder (GDM) model yielded the mobility pre-factor μ_∞ = 1.2 × 10⁻³ cm²/V s, energetic disorder parameter σ = 82 meV and positional disorder parameter Σ = 1.73. The average inter-site separation (a = 7 Å) and the charge localization length (L = 3.6 Å) was estimated by assuming the CDM type charge transport. The microscopic charge transport parameters derived for this polymer are almost identical to the reported values for fully conjugated polymers with high chemical purity. The results presented indicate that the charge transport parameters can be controlled and optimized for organic optoelectronic applications.     

Electrochromic properties as a function of electrolyte on the performance of electrochromic devices consisting of a single-layer polymer

Herein, a study on varying salts and their composition used in the gel electrolyte for a one-step lamination assembly procedure for electrochromic devices was carried out to explore their effects on various electrochromic performance parameters, such as color uniformity, photopic contrast, switching speed, and optical memory. Electrochromic polymers formed in different gel electrolyte compositions are highly dependent on the type, amount, and composition of salt used. The following groups of salts were investigated: ionic liquids, ammonium salts, and lithium salts. The lithium salts yielded devices with the best color uniformity, photopic contrast as high as 48%, and switching response speeds as low as 1 s for 5.5 cm² devices using the electroactive monomer 2,2-dimethyl-3,4-propylenedioxythiophene (ProDOT-Me₂) to generate the electrochromic polymer. Hermetically sealed electrochromic devices exhibited optical memory of 27 h for a 2% photopic transmittance loss under normal laboratory conditions, and a 171 cm² electrochromic device was demonstrated.     

High-performance diketopyrrolopyrrole-based organic field-effect transistors for flexible gas sensors

We demonstrate high-performance flexible polymer OFETs with P-29-DPP-SVS in various geometries. The mobilities of TG/BC OFETs are approximately 3.48 ± 0.93 cm²/V s on a glass substrate and 2.98 ± 0.19 cm²/V s on a PEN substrate. The flexible P-29-DPP-SVS OFETs exhibit excellent ambient and mechanical stabilities under a continuous bending stress of 1200 times at an R = 8.3 mm. In particular, the variation of μ_FET, V_Th and leakage current was very negligible (below 10%) after continuous bending stress. The BG/TC P-29-DPP-SVS OFETs on a PEN substrate applies to flexible NH₃ gas sensors. As the concentration of NH₃ increased, the channel resistance of P-29-DPP-SVS OFETs increased approximately 100 times from ∼10⁷ to ∼10⁹ Ω at V_SD = −5 V and V_GS = −5 V.     

All solution-processed organic single-crystal transistors with high mobility and low-voltage operation

High-mobility organic single-crystal field-effect transistors of 3,11-didecyldinaphtho[2,3-d:2′,3′-d′]benzo[1,2-b:4,5-b′]-dithiophene (C₁₀-DNBDT) operating at low driving voltage are fabricated by an all-solution process. A field-effect mobility as high as 6.9 cm²/V s is achieved at a driving voltage below 5 V, a voltage as low as in battery-operated devices, for example. A low density of trap states is realized at the surface of the solution-processed organic single-crystal films, so that the typical subthreshold swing is less than 0.4 V/decade even on a reasonably thick amorphous polymer gate dielectrics with reliable insulation. The high carrier mobility and low interface trap density at the surface of the C₁₀-DNBDT crystals are both responsible for the development of the high-performance all-solution processed transistors.     

High electron mobility triazine for lower driving voltage and higher efficiency organic light emitting devices

The triazine compound 4,4′-bis-[2-(4,6-diphenyl-1,3,5-triazinyl)]-1,1′-biphenyl (BTB) was developed for use as an electron transport material in organic light emitting devices (OLEDs). The material demonstrates an electron mobility of ∼7.2 × 10⁻⁴ cm² V⁻¹ s⁻¹ at a field of 8.00 × 10⁵ V cm⁻¹, which is 10-fold greater than that of the widely used material tris(8-hydroxyquinoline) aluminum (AlQ₃). OLEDs with a BTB electron transport layer showed a ∼1.7–2.5 V lower driving voltage and a significantly increased efficiency, compared to those with AlQ₃. These results suggest that BTB has a strong potential for use as an OLED electron transport layer material.