Construction of amperometric glucose biosensor based on <Emphasis Type="Italic">in-situ</Emphasis> fabricated hierarchical meso-macroporous SiO<Subscript>2</Subscript> modified Au film electrodes

Gold nanoparticles (GNPs) modified hierarchical meso-macroporous (HMMP) SiO₂ layer on the surface of Au film electrode was developed as a novel enzyme immobilization matrix for biosensors construction. HMMP SiO₂-Au bilayer film electrodes were in-situ fabricated with magnetron sputtering process and templating method. The as-prepared HMMP SiO₂ films were characterized by SEM, TEM, and cyclic voltammetry (CV). The modified layer of HMMP SiO₂ has interconnected pore channels, and the sizes of macropores and mesopores are about 330 nm and 9 nm, respectively. The HMMP SiO₂ modified gold film electrodes not only have no diffusion barrier for electrochemical probes, but also exhibit good electrochemical properties. In addition, the activity and stability of the immobilized enzyme can be commendably retained in HMMP SiO₂. The biosensor exhibits an excellent bioelectrocatalytic response to glucose with a linear range of 1.0×10^-4 M-1.0×10^-2 M, high sensitivity of 18.0 μA·mM^-1·cm^-2, as well as good reproducibility and stability.     

The modification behaviour for Si implanted PET

Polymeric solids have low density, high ability to form intricate shapes, versatile electronic properties and low manufacturing cost. However their uses are still limited by their inherent softness and unexpected dielectric properties. In order to enhance their electrical and mechanical properties, ion implantation techniques have been explored[1—3]. Recent studies have shown that ion implantation is very effective for improving surface properties of polymers such as surface hardness and wear…     

Influence of argon gas pressure on the ZnO:Al films deposited on flexible TPT substrates at room temperature by magnetron sputtering

Aluminium doped ZnO thin films(ZnO︰Al) were deposited on transparent polymer substrates at room temperature by rf magnetron sputtering method from a ZnO target with Al2O3 of 2.0 wt%. Argon gas pressure varied from 0.5 Pa to 2.5 Pa with radio frequency power of 120 W. XRD results showed that all the ZnO︰Al films had a polycrystalline hexagonal structure and a (002) preferred orientation with the c-axis perpendicular to the substrate. The grain sizes of the films were 6.3-14.8 nm.SEM images indicated the ZnO︰Al film with low Argon gas pressure was denser and the deposition rate of the films depended strongly on the Argon gas pressure, increasing firstly and then decreasing with increasing the pressure. The highest deposition rate was 5.2 nm/min at 1 Pa. The optical transmittance of the ZnO︰Al films increased and the blue shift of the absorption edge appeared when the Argon gas pressure increased. The highest transmittance of obtained ZnO︰Al films at 2.5 Pa was about 85% in the visible region. The electrical properties of the films were worsened with the increase of the Argon gas power from 1 Pa to 2.5 Pa. The resistivity of obtained film at 1.0 Pa was 2.79×10-2 Ω·cm.     

Nanometer structure and conductor mechanism of polymer modified by metal ion implantation

Polyethylene terephthalate (PET) has been modified by Ag, Ti, Cu and Si ion implantation with a dose ranging from 1 × 1016 to 2 × 1017 ions/cm2 using a metal vapor vacuum arc (MEVVA) source. The electrical properties of PET have been improved by metal ion implantation. The resistivity of implanted PET decreased obviously with an increase in ion dose. The results show that the conductive behavior of a metal ion implanted sample is different from Si-implantation samples. In order to un-derstant the mechanism of electrical conduction, the structures of implanted layer were observed in detail by XRD and TEM. The nano carbon particles were dispersed in implanted PET. The nano metallic particles were built up in metallic ion implanted layers with dose range from 1 × 1016 to 1 × 1017 ions/ cm2. The nanometer metal net structure was formed in implanted layer when a dose of 2 × 1017ions/ cm2 is reached. Anomalous fractal growths were observed. These surface structure changes revealed conducting mechanism evo     

Ferroelectric properties of Bi3.4Ho0.6Ti3O12 thin films prepared by sol-gel method

We have prepared the Ho-substituted bismuth titanate (Bi_3.4Ho_0.6Ti₃O₁₂, BHT) thin films on Pt/Ti/SiO₂/Si substrates using sol-gel method. The crystal structure and morphology of the films were characterized using X-ray diffraction and atomic force microscopy. The BHT film shows a single phase of Bi-layered Aurivillius structure and dense microstructure. The 2Pr and 2Ec of the 600-nm-thick BHT film were 38.4 μC/cm² and 376.1 kV/cm, respectively at applied electric field 500 kV/cm. The dielectric constant and dielectric loss are about 310 and 0.015 at a frequency of 1 MHz, respectively. The Pr value decreased to 93% of its pre-fatigue values after 4.46×10⁹ switching cycles at 1 MHz frenquency, and the BHT film shows good insulating behavior according to the test of leakage current. Supported by the Hubei Province Natural Science Foundation (Grant No. 2007ABA309)     

Nano-phases and corrosion resistance of C+Mo dual implanted steel

The corrosion resistance of C + Mo dual-implanted HI3 steel was studied using multi-sweep cyclic voltammetry. The phase formation conditions for corrosion resistance and its effects were researched. The super-saturation solid station solution of Mo+ and C+ atoms was formed in Mo + C dual implanted steel. Precipitate phase with nanometer size Fe2Mo, FeMo, MoC, Fe5C3 and Fe7C3 were formed in dual implanted layer. The passivation layer consisted of these nanometer phases. The corrosion resistance of the dual implanted layer was better than that of single Mo implantation. Jp of the Mo implanted sample is 0.55 times that of H13 steel. The corrosion resistance of the dual implantation was enhanced when ion dose increased. When the Mo+ ion dose was 6 × 1017/cm2 in the dual implantation, Jp of the dual implanted sample was only 0.11 times that in H13 steel. What is important is that pitting corrosion properties of dual implanted steel were improved obviously.     

氩等离子体诱导量子阱混合技术

研究了基于InGaAsP/InP应变多量子阱片的氩等离子体诱导量子阱混合工艺方法.当等离子刻蚀机（ICP）的射频(RF）功率为480 W、ICP功率为500 W、处理时间为1 min时,ICP处理过程中氩（Ar）等离子体对量子阱片的刻蚀深度小于牺牲层的厚度500 nm,晶格缺陷将产生在牺牲层内.样品在纯氮气条件、不同温度下快速退火2 min,缺陷扩散至量子阱层诱发量子阱混合.不同实验条件的样品PL光谱表明：随着退火温度和ICP功率的增加,量子阱片的光致发光谱（PL）峰值波长会发生显著的蓝移,分别在750 ℃和500 W时趋于饱和;此时获得的蓝移为110 nm,PL强度为原生片的55%,量子阱层仍保持了较好的晶格特性.     

Frequency up-conversion luminescence properties and mechanism of Tm<Superscript>3+</Superscript>/Er<Superscript>3+</Superscript>/Yb<Superscript>3+</Superscript> co-doped oxyfluorogermanate glasses

Oxyfluoride glasses were developed with composition 60GeO 2 ·10AlF 3 ·25BaF 2 ·(1.95-x)GdF 3 · 3YbF 3 ·0.05TmF 3 ·xErF 3 (x=0.02,0.05,0.08,0.11,0.14,0.17)in mole percent.Intense blue(476 nm),green(524 and 546 nm)and red(658 nm)emissions which identified from the 1G 4 →3H 6 transition of Tm3+and the(2H 11/2 ,4S 3/2 )→4I 15/2 ,4F 9/2 →4I 15/2 transitions of Er3+,respectively,were simultaneously observed under 980 nm excitation at room temperature.The results show that multicolor luminescence including white l...     

Improved visible transparency of SIO<Subscript>2</Subscript>/ZNO:AL /CEO<Subscript>2</Subscript>-TIO<Subscript>2</Subscript>/SIO<Subscript>2</Subscript> multilayer films with high UV absorption and infrared reflection rate

New visible transparent, UV absorption, and high infrared reflection properties have been realized by depositing multilayer SiO₂/ZnO: Al/CeO₂-TiO₂/SiO₂ films onto glass substrates at low temperature by radio frequency magnetron sputtering. Optimum thickness of SiO₂, ZnO: Al (ZAO) and CeO₂-TiO₂ (CTO) films were designed with the aid of thin film design software. The degree of antireflection can be controlled by adjusting the thickness and refractive index. The outer SiO₂ film can diminish the interference coloring and increase the transparency; the inner SiO₂ film improves the adhesion of the coating on the glass substrate and prevents Ca²⁺, Na⁺ in the glass substrate from entering the ZAO film. The average transmittance in the visible light range increases by nearly 18%-20%, as compared to double layer ZAO/CTO films. And the films display high infrared reflection rate of above 75% in the wavelength range of 10-25 μm and good UV absorption (> 98%) properties. These systems are easy to produce on a large scale at low cost and exhibit high mechanical and chemical durability. The triple functional films with high UV absorption, antireflective and high infrared reflection rate will adapt to application in flat panel display and architectural coating glass, automotive glass, with diminishing light pollution as well as decreasing eye fatigue and increasing comfort.     

Optical waveguide and nonlinear properties of Bi<Subscript>3</Subscript>NdTi<Subscript>3</Subscript>O<Subscript>12</Subscript> thin films

Neodymium-substituted bismuth titanate (Bi₃NdTi₃O₁₂, BNT) thin films were prepared on quartz substrates by a metal-organic solution deposition process. The crystalline structure was evaluated by X-ray diffraction. Waveguide property was investigated by using prism coupling technique and optical transmittance measurement. The optical nonlinearities of the film were measured by the top-hat Z-scan techniques and a large positive nonlinear refractive index, nonlinear refractive coefficient and two-photon absorption coefficient were determined to be 3.84 × 10⁻⁷ esu, 0.7523 cm²/GW and 4.81 × 10⁴ cm/GW, respectively. These results reveal that the BNT film may be a kind of new multifunctional materials.     

Electrical conductivity of （Na3AlF6-40%K3AlF6）-AlF3-Al2O3 melts

The effects of contents of AlF3 and Al2O3, and temperature on electrical conductivity of （Na3AlF6-40%K3AlF6）- AlF3-Al2O3 were studied by continuously varying cell censtant （CVCC） technique. The results show that the conductivities of melts increase with the increase of temperature, but by different extents. Every increasing 10 ℃ results in an increase of 1.85 × 10^-2, 1.86× 10^-2, 1.89 × 10^-2 and 2.20 × 10^-2 S/cm in conductivity for the （Na3AlF6-40%K3AlF6）-AlF3 melts containing 0%, 20%, 24%, and 30% AlF3, respectively. An increase of every 10 ℃ in temperature results an increase about 1.89× 10^-2, 1.94 × 10^-2, 1.95 × 10^-2, 1.99× 10^-2 and 2.10× 10^-2 S/cm for （Na3AlF6-40%K3AlF6）-AlF3-Al2O3 melts containing 0%, 1%, 2%, 3% and 4% Al2O3, respectively. The activation energy of conductance was calculated based on Arrhenius equation. Every increasing 1% of AlF3 results in a decrease of 0.019 and 0.020 S/cm in conductivity for （Na3AlF6-40%K3AlF6）-AlF3 melts at 900 and 1 000 ℃, respectively. Every increase of 1% Al2O3 results in a decrease of 0.07 S/cm in conductivity for （Na3AlF6-40%K3AlF6）-AlF3-Al2O3 melts. The activation energy of conductance increases with the increase in content of AlF3 and Al2O3.     

Preparation and characteristics of Cu/Al<Subscript>2</Subscript>O<Subscript>3</Subscript>/MgF<Subscript>2</Subscript>/Au tunnel junction

The fabrication process of Cu/Al₂O₃/MgF₂/Au double-barrier metal/insulator/metal junction (DMIMJ) was introduced, and more stable light emission from this junction was successfully observed. The light emission physical mechanism of the junction was discussed. Results show that light emission spectrum of this structure locates at wavelength of 250–700 nm with two peaks at around 460 nm and 640 nm, which moves towards shorter wavelength region in comparison with that of the Al/Al₂O₃/Au junction. The light emission efficiency of this junction ranges from 0.7×10⁻⁵–2.0×10⁻⁵, which is 1 to 2 orders higher than that of the single-barrier Al/Al₂O₃/Au junction. The improved properties of this structure should be due to the electrons resonant tunneling effect in the double-barrier.     

Optical properties and microstructure of Ta<Subscript>2</Subscript>O<Subscript>5</Subscript> thin films prepared by ion assisted electron beam evaporation

An effective method for determining the refractive index of weak absorption transparent thin films was presented, which is also applicable to other weak absorption dielectric thin films. The as-deposited Ta2O5 thin films prepared by ion assisted electron beam evaporation showed a maxima transmittance as high as 93% which was close to that of the bare substrate, and exhibited a blue shift when the substrate temperature increased from room temperature to 250 ℃. The refractive index seemed to be immune to the substrate temperature and film thickness with its value about 2.14 at incidence wavelength of 55（1 nm. The surface morphology measured by atomic force microscopy （AFM） revealed that the microstructures lead to the slim optical difference, which was the interplay of substrate temperature and assisted ion beam.     

Interaction of 4-aminosalicylic acid and surfactants in aqueous solutions using UV-Vis spectra and steady-state fluorescence spectroscopy

The interactions of 4-aminosalicylic acid (4-ASA) and surfactants in aqueous solutions were investigated by using UV-Vis spectra and steady-state fluorescence spectroscopy.The results showed that the strongest peak at UV-vis spectra of 4-ASA aqueous solution in the presence of cationic surfactant and cetyltrimethyl ammonium bromide (CTAB) appeared at 206 nm and took a red shift from 206 nm to 221 nm with the increase of 4-ASA concentrations from 0.8×10-5 to 4.4×10-4 mol/L.Similarly,the strongest peak at UV-vis spectra of 4-ASA aqueous solution in the presence of nonionic surfactant and polyvinylpyrrolidone (PVP) appeared at 206 nm and took a red shift from 206 nm to 219 nm with the increase of 4-ASA concentrations from 0.8×10-5 to 4.4×10-4 mol/L.However,the similar phenomena did not appeared in the presence of anion surfactant,sodium dodecyl sulfate (SDS),the UV-vis spectra of 4-ASA aqueous solution remained the same peak position and the peak value increased with the 4-ASA concentration increase.The results could be attributed to the electrostatic attraction between 4-ASA and CTAB or PVP,as well as the electrostatic repulsion between 4-ASA and SDS.Furthermore,the value of critical micelle concentration (CMC) of surfactants in the presence of 4-ASA was determined with Fluorescence method.The first and second CMC of CTAB was 1.2×10-4 M and 2.4×10-4 M,respectively.The first and second CMC of PVP was 1.2×10-4 M and 2.8×10-4 M.SDS realized the multiple micellizations to form multiple CMC.     

Synthesis and luminescence properties of red phosphor CaO: Eu3+

Ca(NO₃)₂·4H₂O, Eu(NO₃)₃ and H₂C₂O₄·2H₂O were adopted to synthesize CaO: Eu³⁺ with the chemical co-precipitation method, and the effects of the calcination temperature and Eu³⁺ doping concentration on the phosphor structure and its luminescent properties were investigated by TG-SDTA, XRD, and PL-PLE. The results confirm that the Eu³⁺ ions as luminescent centers substitutes Ca²⁺ sites without changing the crystal structure of cubic CaO. The optimum calcination temperature and the optimum concentration of Eu³⁺ are 1 100 ° and 1 mol%, respectively, under which the best crystallinity and highest PL intensity appeared. The maximum emission wavelength is 592 nm (⁵D₀→⁷F₁) which is excited by xenon lamp with the wavelength of 200–280 nm, indicating that the Eu³⁺ ion mainly locates in the symmetric position (O_h) in the crystal lattice of CaO. Funded by the Science and Technology Bureau of Sichun Province(No. 2006J13-059) and Education Bureau of Sichun Province (No. 2006A094)     

Synthesis and characterization of arsenate antimonic acid AAAc(1 : 1)

The AAAc(1 : 1) was synthesized in water by As₂O₃ and Sb₂O₃ with molar ratio of 1 : 1. AAAc(1 : 1) was characterized by Raman, IR, TG/DTG, DSC, XPS and XRD. The results show that there are four peaks to v _s of As-OH, As-O-Sb, Sb-OH and Sb-O-Sb in Raman spectra of AAAc(1 : 1) at 100 – 1 000 cm⁻¹. The solution of AAAc(1 : 1) was also titrated with KOH solution. The titration results show that AAAc(1 : 1) is a hexabasic acid with dissociation constants of k ₁=3.62 × 10⁻², k ₂=3.05 × 10⁻³, k ₃=6.43 × 10⁻⁶, k ₄ =9.78 × 10⁻⁸, k ₅=1.32 × 10⁻¹¹, k ₆=3.87 × 10⁻¹². AAAc(1 : 1) has a good solubility and stability in water, its solid obtained by free volatilizing water from its solution under air at ambient temperature is amorphous. Chemical and thermal analysis show that the composition of AAAc(1 : 1) is As₂O₅ · Sb₂O₅ · 8H₂O in air at 25 °C. AAAc(1 : 1) has the structure of AsO(OH)₂-OH-Sb(OH)₄-O-Sb(OH)₄-OH-AsO(OH)₂ or As(OH)₃-O-Sb(OH)₄-O-Sb(OH)₄-O-As(OH)₃ (isomerism) through experimental determination and geometry optimization. Foundation item: Project(50274075) supported by the National Natural Science Foundation of China     

Optical, mechanical and laser-induced damage threshold properties of 1 064 nm, 532 nm frequency-doubled antireflection coating for LBO

1 064 nm, 532 nm frequency-doubled antireflection (AR) coatings with buffer layer of SiO2 between the coating and the substrate were fabricated by the electron beam evaporation technology on the substrate of lithium triborate (LiB3O5 or LBO) crystals. The residual reflectance of the sample is 0.07% and 0.11% at 1 064 nm and 532 nm, respectively. The adhesion and the laser-induced damage threshold (LIDT) of the sample are greater than 200 mN and 18.6 J/cm2. The strengthening mechanism of adhesion and LIDT of the buffer layer of SiO2 were discussed by considering full plastic indentation and shear theory, and spallation of a plated film induced by thermal shock stress, respectively.     

Inducing effect of Pb(Zr0.4Ti0.6)O3 thin film derived by different processes in BiFeO3/Pb(Zr0.4Ti0.6)O3 multilayer capacitor at room temperature

BiFeO₃/PZT multilayer capacitor was prepared on Pt(100)/Ti/SiO₂/Si(100) substrate. PZT buffer layer was derived by MOCVD method (label: PZT₁) and sputtering method (label: PZT₂) respectively. XRD analysis indicated that high (110) orientation of BFO in the BFO/PZT₁ structure was achieved. SEM analysis indicated a better microstructure in the BFO/PZT₁ structure compared with BFO/PZT₂. The remnant polarization of the BFO/PZT₁ was 82.5 μ C/cm² at an applied voltage of 8 V, compared with that of 25.2 μC/cm² in the BFO/PZT₂ structure. The BFO/PZT₁ multilayer exhibited little polarization fatigue (<1.5%) upon 1×10¹⁰ switching cycles, at an applied voltage of 4 V. The leakage current density was about 2×10₋₇ A/cm² at an applied voltage 4 V, in the BFO/PZT₁ capacitor. All the results indicated that PZT can act as an inducing layer to the BFO and the MOCVD derived PZT has more inducing effect to the BFO thin film at room temperature. Supported by the National Natural Science Foundation of China (Grant No. 60601003), Ying Tong Education Foundation (Grant No. 101063), and International Cooperation Project from Ministry of Science and Technology of China (Grant No. 2008DFA12000)     

Effect of catalyst on structure of （PEO）8LiClO4-SiO2 composite polymer electrolyte films

（PEO）8LiClO4-SiO2 composite polymer electrolytes（CPEs） were prepared by in-situ reaction, in which ethyl-orthosilicate （TEOS） was catalyzed by HCl and NH3·H2O, respectively. The ionic conductivity, the contact angle and the morphology of inorganic particles in the CPEs were investigated by AC impedance spectra, contact angle method and TEM. The conductivities of acid-catalyzed CPE and alkali-catalyzed CPE are 2.2×10^-5 and 1.1×10^-5 S/cm respectively at 30 ℃. The results imply that the catalyst plays an important role in the structure of in-situ preparation of SiO2, and influences the surface energy and conductivity of CPE films directly. Meanwhile, the ionic conductivity is related to the surface energy.     

Effect of Bi content in precursor solutions on microstructure and ferroelectric properties of bismuth cerium titanate thin films

Sol-gel derived bismuth cerium titanate (BCT) thin films with different Bi contents in precursor solutions were deposited on the Pt/Ti/SiO₂/Si substrates. The effect of Bi content in the precursor solutions on the microstructure and ferroelectric properties of the films was investigated. It is found that with Bi content increasing from 90% to 110% of the nominal value in the precursor solutions, the dissipation factor and leakage current density of the BCT films obtained decrease, while the grain sizes, dielectric constant and remanent polarizations (2Pr) increase, and concurrently, a Bi-deficient phase of Bi₂Ti₂O₇ gradually disappears. The film prepared from solution with 110% of the nominal Bi content exhibits pure Bi-layered Aurivillius polycrystalline phase, and the 2Pr value and coercive field value are 67.1 μC/cm² and 299.7 kV/cm, respectively. Their dielectric constant and the dissipation factor are about 172 and 0.033 at 1 kHz, respectively. Moreover, this film shows no polarization fatigue after 4.46×10⁹ switching cycles. Supported by the Hubei Province Natural Science Foundation (Grant No. 2007ABA309)