Characterization and enhanced field emission properties of carbon nanotube bundle arrays coated with N-doped nanocrystalline anatase TiO2

Anatase TiO₂ nanocrystals (NCs) were deposited onto patterned carbon nanotube (CNT) bundle arrays to form a TiO₂/CNT composite using metal organic chemical vapor deposition (MOCVD) using titanium-tetraisopropoxide (Ti(OC₃H₇)₄) as a source reagent. The N-doped TiO₂/CNT composite was then fabricated using nitrogen plasma treatment. The structural and spectroscopic properties of TiO₂/CNT composites were characterized by field-emission scanning electron microscopy, micro-Raman spectroscopy and X-ray photoelectron spectroscopy. The combined geometrical structure and low electron affinity effects of N-doped TiO₂ led to a low turn-on field of 1.0 V μm⁻¹ at a current density of 10 μA cm⁻², a low threshold field of 1.9 V μm⁻¹ at a current density of 1 mA cm⁻², a high field enhancement factor of 3.0 × 10³, and long-term stability for the N-doped TiO₂/CNT composite. The results revealed that the N-doped TiO₂/CNT composite can be a potential candidate for field emission devices.     

Selective growth of well-aligned carbon nanotubes by APCVD

Well-aligned good-quality carbon nanotube (CNT) array was grown on silicon substrate by atmospheric pressure chemical vapor deposition (APCVD) through SiO₂ masking. First, the patterned substrate was pretreated with NH₃ and then CNTs were synthesized at 800 °C using Ni as the catalyst, acetylene (C₂H₂) as the carbon source material and N₂ as the carrier gas. Effects of the NH₃-pretreatment time, the flow ratio of [C₂H₂]/[NH₃] and the CNT growth time on the qualities of CNT array were analyzed in detail. It was found that good-quality CNTs with an average length of around 15 μm could be grown by pretreating the Si substrate with NH₃ for 10 min and then conducting the CNT growth with a flow ratio of [C₂H₂]/[NH₃] = 30/100. Furthermore, the field emission property of CNT array was investigated using a diode structure. It was found that the turn-on electric field decreased with increasing CNT length. The turn-on electric field as low as about 2 V/μm with an emission current density of 10 μA/cm² was achieved for a CNT-array diode with the tube length near 18 μm. For the same device, the emission current density could be elevated to 10 mA/cm² with the applied voltage of 3.26 V/μm.     

Enhancing electron field emission of carbon nanoflakes by hydrogen post-annealing process

In this study, the carbon nanoflakes (CNFs) fabricated by sputtering were chosen as the field emission emitters because of their very sharp and thin edges which are potentially good electron field emission sites. The as-deposited CNFs were annealed in the furnace under hydrogen atmosphere. The results showed that the optimum field emission properties with smaller turn-on field and larger current density were obtained at annealing temperature of 600 °C for 10 min. The hydrogen thermal annealing has chemical etching on the surface of the CNFs and produces appropriate emission site density to increase the emission current density. The turn-on field was reduced from 6.7 to 5.8 V/μm and electric current density was increased from 22 to 187 μA/cm² under 8 V/μm after hydrogen thermal annealing.     

Electromigration-induced cracks in eutectic SnPb solder reaction couple at room temperature

Electromigration (EM) of 63Sn–37Pb solder reaction couple was studied under high current density of 5 × 10³ A/cm² at room temperature. There was non-uniform distribution of current density across the linear specimen, and the dissimilar interface of two different materials could trigger current crowding especially at the edge of the interface. Though the atoms/ions of Sn and Pb would migrate along the direction of electron flow pushed by electron wind force, the Sn atoms were observed to be the principal diffusion entities at room temperature. Depletion of mass at cathode side induced the tensile stress along parallel direction of the specimen cross-section, while the accumulation of mass at anode side induced the compressive stress along the perpendicular direction of the specimen cross-section. Crack initiation and propagation in both cathode and anode side was found to be strongly dependent on the current density distribution.     

Enhanced and stable electron emission of carbon nanotube emitter arrays by post-growth hydrofluoric acid treatment

Carbon nanotubes (CNT) have been highlighted as possible candidates for field-emission emitters and vacuum nanoelectronic devices. In this article, we studied the effect of acid treatment of CNTs on field emission from carbon nanotube field emitter arrays (FEAs), grown using the resist-assisted patterning process (RAP). The emission current densities of as grown CNT-FEAs and those which were later immersed in hydrofluoric acid (HF) for 20 s, were 19 μA/cm² and 7.0 mA/cm², respectively, when measured at an anode field of 9.2 V/μm. Hence, the emission current densities after HF treatment are 300 times larger than those of as grown CNT-FEAs. Also, it was observed that a very stable electron emission current was obtained after stressing the CNTs with an electric field of 9.2 V/μm for 800 min in dc-mode, where the emission current non-uniformity was 0.13%. The enhancement in electron emission after HF treatment appears to be due to the effect of fluorine bonding. Also, the electron emission characteristics and structural improvement of CNT-FEAs after HF treatment are discussed.     

Growth and optical and field emission properties of flower-like ZnO nanostructures with hexagonal crown

Flower-like zinc oxide (ZnO) nanostructures with hexagonal crown were synthesized on a Si substrate by direct thermal evaporation of zinc power at a low temperature of 600 °C and atmospheric pressure. Field emission scanning electron microscopy, transmission electron microscopy, X-ray diffraction, Raman spectroscopy and photoluminescence were applied to study the structural characteristics and optical properties of the product. The result indicated that the flower-like product with many slender branches and hexagonal crowns at the ends were single-crystalline wurtzite structures and were preferentially oriented in the <001> direction. The photoluminescence spectrum demonstrated a strong UV emission band at about 386 nm and a green emission band at 516 nm. The field emission of the product showed a turn-on field of 3.0 V/µm at a current density of 0.1 μA/cm², while the emission current density reached about 1 mA/cm² at an applied field of 5.9 V/μm.     

Enhanced conductivity of pulsed laser deposited n-InGaZn6O9 films and its rectifying characteristics with p-SiC

Wide band gap InGaZn₆O₉ films of thickness ~ 350 nm were deposited on sapphire (0001) at room temperature by using the pulsed laser deposition technique. The transparent films showed the optical transmission of > 80% with the room temperature Hall mobility of ~ 10 cm²/V s and conductivity of 4 × 10² S/cm at a carrier density > 10²⁰ cm^− 3. The electrical properties as a function of deposition temperatures revealed that the conductivity and mobility almost retained up to the deposition temperature of 200 °C. The films annealed in different atmospheres suggested oxygen vacancy plays an important role in determining the electrical conductivity of the compound. Room temperature grown heterostructure of n-InGaZn₆O₉/p-SiC showed a good rectifying behavior with a leakage current density of less than 10^− 9 A/cm², current rectifying ratio of 10⁵ with a forward turn on voltage ~ 3 V, and a breakdown voltage greater than 32 V.     

Annealing effect on dielectric and leakage current characteristics of Mn-doped Ba0.6Sr0.4TiO3 thin films as gate insulators for low voltage ZnO thin film transistor

We report on the dielectric properties and leakage current characteristics of 3 mol% Mn-doped Ba_0.6Sr_0.4TiO₃ (BST) thin films post-annealed up to 600 °C following room temperature deposition. The suitability of 3 mol% Mn-doped BST films as gate insulators for low voltage ZnO thin film transistors (TFTs) is investigated. The dielectric constant of 3 mol% Mn-doped BST films increased from 24 at in-situ deposition up to 260 at an annealing temperature of 600 °C due to increased crystallinity and the formation of perovskite phase. The measured leakage current density of 3 mol% Mn-doped BST films remained on the order of 5 × 10^− 9 to 10^− 8 A/cm² without further reduction as the annealing temperature increased, thereby demonstrating significant improvement in the leakage current characteristics of in-situ grown Mn-doped BST films as compared to that (5 × 10^− 4 A/cm² at 5 V) of pure BST films. All room temperature processed ZnO-TFTs using a 3 mol% Mn-doped BST gate insulator exhibited a field effect mobility of 1.0 cm²/Vs and low voltage device performance of less than 7 V.     

Study on electron field emission enhancement from nitrogenated carbon nanotips synthesized by plasma-enhanced hot filament chemical vapor deposition

Nitrogenated carbon nanotips (NCNTPs) with different structures were synthesized by plasma-enhanced hot filament chemical vapor deposition using methane, hydrogen and nitrogen as the reactive gases. The structures and compositions of the NCNTPs were studied by field emission scanning electron microscopy (FESEM), micro-Raman spectroscopy, and X-ray photoelectron spectroscopy (XPS). The XPS spectra reveal that nitrogen is incorporated into the carbon nanotips to form the NCNTPs under plasma condition. The Raman spectra and FESEM images show that the NCNTPs are amorphous structure and their morphologies change with the change in deposition conditions, respectively. The electron field emission (EFE) from the NCNTPs was measured and the EFE results indicate that the NCNTPs with the smooth surfaces and high density can emit a current density of 3 × 10³ μA/cm² at an electric field of 7.2 V/μm, which exhibits better EFE characteristic than the NCNTPs with the carbon nanowires on their surfaces due to small amount of oxygen adsorbed on the smooth surfaces of NCNTPs. According to the possible structures of nitrogen in sp² cluster in rings, the EFE enhancement of the NCNTPs compared with pure carbon nanotips was studied. The high emission current density (3 × 10³ μA/cm²) at low field (7.2 V/μm) suggests that the NCNTPs can serve as effective electron emission sources for numerous applications.     

Field emission from the structure of well-aligned TiO2/Ti nanotube arrays

Well-aligned TiO₂/Ti nanotube arrays were synthesized by anodic oxidation of titanium foil in 0.5 wt.% HF in various anodization voltages. The images of filed emission scanning electron microscopy indicate that the nanotubes structure parameters, such as diameter, wall thickness and density, can be controlled by adjusting the anodization voltage. The peaks at 25.3° and 48.0° of X-ray diffraction pattern illuminate that the TiO₂ nanotube arrays annealed at 500 °C are mainly in anatase phase. The filed emission (FE) properties of the samples were investigated. A turn-on electric field 7.8 V/µm, a field enhancement factors approximately 870 and a highest FE current density 3.4 mA/cm² were obtained. The emission current (2.3 mA/cm² at 18.8 V/µm) was quite stable within 480 min. The results show that the FE properties of TiO₂/Ti have much relation to the structure parameters.     

Composite Yarns of Multiwalled Carbon Nanotubes with Metallic Electrical Conductivity

Unique macrostructures known as spun carbon‐nanotube fibers (CNT yarns) can be manufactured from vertically aligned forests of multiwalled carbon nanotubes (MWCNTs). These yarns behave as semiconductors with room‐temperature conductivities of about 5 × 10² S cm^?1. Their potential use as, for example, microelectrodes in medical implants, wires in microelectronics, or lightweight conductors in the aviation industry has hitherto been hampered by their insufficient electrical conductivity. In this Full Paper, the synthesis of metal–CNT composite yarns, which combine the unique properties of CNT yarns and nanocrystalline metals to obtain a new class of materials with enhanced electrical conductivity, is presented. The synthesis is achieved using a new technique, self‐fuelled electrodeposition (SFED), which combines a metal reducing agent and an external circuit for transfer of electrons to the CNT surface, where the deposition of metal nanoparticles takes place. In particular, the Cu–CNT and Au–CNT composite yarns prepared by this method have metal‐like electrical conductivities (2–3 × 10⁵ S cm^?1) and are mechanically robust against stringent tape tests. However, the tensile strengths of the composite yarns are 30–50% smaller than that of the unmodified CNT yarn. The SFED technique described here can also be used as a convenient means for the deposition of metal nanoparticles on solid electrode supports, such as conducting glass or carbon black, for catalytic applications.     

Influence of Ti coatings on field emission characteristics of nano-sheet carbon films

Nano-sheet carbon films (NSCFs) coated with a 2-nm Ti layer were fabricated on n-type Si (110) by means of a quartz-tube-type microwave-plasma chemical-vapour-deposition (MWPCVD) method with hydrogen-methane gas mixture and an electron beam (EB) evaporation method. The field emission (FE) properties of the NSCF were changed by depositing a thin Ti film on its surface. The threshold field was decreased from 3.7 V/μm to 2.5 V/μm and the FE current density at a macroscopic electric field (E) of 10 V/μm was decreased from 41.7 mA/cm² to 26.3 mA/cm² for Ti-coated NSCFs. Moreover, the saturation tendency of the emission current density was not improved for Ti-coated NSCFs. A three-region E model considering statistical size effects of FE tip structures in the low E region and space-charge-limited-current (SCLC) effects in the high E region was proposed and the FE data in the low, middle and high E regions were reasonably interpreted.     

Fabrication of carbon nanoneedle and carbon nanowall mixture film with two-step growth method

A novel nano-carbon electron emitter film has been developed on a stainless steel substrate by a direct current plasma chemical vapor deposition system. Samples grown at temperatures of 900 °C and 1100 °C showed different surface morphologies. It is found that a two-step growth process established by combining these two temperature growths together is suitable for deposition of a high density emitter array film. The as-grown nano-carbon film indicates a carbon nanoneedle and carbon nanowall mixture film, where the needle array density is about 3 × 10⁷/cm². The I-V characteristic shows an emission current density of 228 mA/cm² at 2.5 V/μm, and the field emission current is stable, making it possibly suitable for developing field emission devices.     

Elektronenfeldemission mit Nanoemitter ohne Begrenzung und Restgas‐Ionisation?

Electron field emission from nano‐emitter without limitation and residual‐gas ionisation? The article is dealing with hyper giant conductivity at room temperature, as published in this journal. The novel material property was explained with a field‐emission measurement of a nano‐emitter. The apparently measured current density of 1.8 GA/cm² has been transferred to the emitter material. But the current density of electron field emission is limited in the range of kA/cm² (FN theory), and so other emission mechanism will be analysed, too. Especially the triplepoint (metal‐insulator‐vacuum) is an excellent field emitter and active over the entire length of cathode edge. Secondary electron emission is increased by the increasing of residualgas ionization and transition to gas discharge will be accelerated. Also, it must be considered that nanorods have a material‐independent quantum resistance in relation to h/e ². There are enough criteria for a metrological and scientifically reviewing.     

Effect of nano-silver particles in bonding material on field emission properties for carbon nanotube cathodes

Effects of bonding materials in a screen-printing paste on field emission properties were investigated for carbon nanotube (CNT) cathodes. The CNT cathodes were characterized for their dependence on current density in terms of the sintering behavior of the bonding material. As the diameter of the Ag particles in the bonding material decreased from 1000 nm to 10 nm, the current density of the CNT cathode increased. The sintering temperature of bonding materials was decreased for small silver (Ag) particles in bonding material. The higher current density for a CNT cathode fabricated with smaller Ag particles was primarily due to the lower sheet resistance of the bonding material after heat treatment.     

Low temperature growth of carbon nanotubes in a magnetic field

We report on the growth of carbon nanotubes on a glass substrate at a low temperature of 450 °C by plasma-enhanced chemical vapor deposition in the presence of a magnetic field. The growth of carbon nanotubes can be realized at 450 °C only when a magnetic field is applied to the substrate. Carbon nanotubes cannot be grown in the absence of a magnetic field at the same temperature. An NH₃ plasma pretreatment significantly improved the uniformity of the grain size of the Ni catalyst under the magnetic field. The enhancement in the growth of CNTs at low temperature can be attributed to the magnetic moment pre-alignment of the ferromagnetic catalyst film under high magnetic field. A high emission current density of 20 mA/cm² was obtained at 6 V/μm and a stable emission current was observed. This method permits the growth of carbon nanotubes directly on glass substrate at much more reliable low temperatures for the fabrication of high-density field emitter arrays.     

Effect of small amount of rare earth addition on electromigration in eutectic SnBi solder reaction couple

Effect of small amount of rare earth (RE) addition on electromigration behavior of Cu/SnBi/Cu solder reaction couple (SRC) was investigated with current density of 5 × 10³ A/cm² at room temperature and 100 °C, respectively. Results indicate that tiny RE addition to eutectic SnBi solder alloy can make the energy of interfaces and grain boundaries decrease, restrain the movement of dislocations and grain boundary sliding. Therefore, phase segregation and IMC growth will be effectively suppressed which enhances the electromigration resistance.     

Synthesis and improved electron field emission characteristics of Au-coated nano-carbon needle films

Nano-carbon needle films (NCNFs) coated with a 5-nm Au layer were prepared on p-type Si (100) substrates by means of quartz-tube type microwave plasma chemical vapor deposition (MWPCVD) at different total gas pressures and an electron beam (EB) method. The NCNF deposited at the total gas pressure of 60 Torr had better field emission (FE) characteristics due to the dense structure of carbon sheets, good direction and high density of carbon needles. The FE properties were obviously improved due to depositing Au thin layer on NCNFs. The FE current density at a macroscopic electric field, E, of 10 V/μm was increased from 68.2 mA/cm² to 154.6 mA/cm² and the threshold field was decreased from 2.4 V/μm to 2.1 V/μm for the Au-coated NCNF deposited at the total gas pressure of 60 Torr. The three-region E model was employed to reasonably explain the FE data.     

Synthesis and improved electron field emission characteristics of Au-coated nano-carbon needle films

Nano-carbon needle films (NCNFs) coated with a 5-nm Au layer were prepared on p-type Si (100) substrates by means of quartz-tube type microwave plasma chemical vapor deposition (MWPCVD) at different total gas pressures and an electron beam (EB) method. The NCNF deposited at the total gas pressure of 60 Torr had better field emission (FE) characteristics due to the dense structure of carbon sheets, good direction and high density of carbon needles. The FE properties were obviously improved due to depositing Au thin layer on NCNFs. The FE current density at a macroscopic electric field, E, of 10 V/μm was increased from 68.2 mA/cm² to 154.6 mA/cm² and the threshold field was decreased from 2.4 V/μm to 2.1 V/μm for the Au-coated NCNF deposited at the total gas pressure of 60 Torr. The three-region E model was employed to reasonably explain the FE data.     

Novel ring structure for minimisation of screening effect in carbon nanotube based field emitters

Carbon Nanotubes (CNTs) are promising candidates for cold cathodes because of their high aspect ratio and robustness. However, the major hindrance in cold cathode based applications is the screening effect, which reduces the effective field at the tip and thereby the current density. The emission current can be improved by minimising the screening effect. The adverse effect of screening can be addressed by either controlling the growth density or by optimising the patterns of CNT cathodes. Here, novel patterns have been used to increase edge length per unit area in planar vertically aligned CNT bundles. Our motive was to increase the number of effective emitters, since the CNT at the edges are less screened by the proximal CNTs. By varying geometry and spacing of solid CNT dot patterns and by introducing the square ring structures; we could successfully enhance the effective emitters at the edges. It has been observed that an enhancement of edge length from 0.032 per micron to 0.2 per micron increases the current density from 0.71mA/cm² to 16.2 mA/cm² at a field of 4.5 V/μm. CNTs in dotted structure with high value of edge length per unit area emit very high current density as compared to other dotted structures with low value of edge length per unit area Simulation studies confirms our argument that CNTs at the corners are the least screened and have the maximum local electric field.