一种低噪声精密运算放大器

基于40 V标准双极工艺,设计了一种低噪声精密运算放大器电路。该电路主要用于高精度、高分辨率系统。介绍了运算放大器总体架构以及工作原理,对低噪声精密运算放大器设计关键技术,如输入偏置电流降低、频率稳定性补偿、输入失调电压降低等,进行了分析。利用Spectre软件进行了仿真,并进行了流片验证。对芯片进行了实际测试,结果显示,在±15 V工作电压条件下,该放大器的输入偏置电流为2 nA,输入失调电压为10 μV,大信号电压增益为132 dB,共模抑制比为135 dB,电源抑制比130 dB。电路满足高精度、高分辨率、低噪声等各种场合的应用需求。     

应用于无线传感网络SoC的逐次逼近A/D转换器

设计了应用于无线传感网络SoC解决方案的10位150 kS/s 逐次逼近A/D转换器.通过失调消除技术、合理的时序控制和版图设计,实现了电路的高精度和低功耗.设计的A/D转换器积分非线性和微分非线性分别为0.54 LSB和0.8 LSB;在150 kS/s采样率、14.3 kHz输入信号频率时,信噪比为60.8 dB,无杂散动态范围83.1 dB.设计实现基于TSMC 0.18 μm混合信号CMOS工艺,IP核面积为0.083 mm2,1.8 V工作电压下功耗为0.56 mW.     

一种高精密集成运算放大器的研制

基于运算放大器的基本原理和一些关键技术(基流自举补偿、偏置微调等)的运用,成功地研制出一种双极型高精度低失调集成运算放大器.测试结果显示,该运算放大器失调电压仅为10 μV,失调电流小于1 nA,开环增益为120 dB,单位增益带宽680 kHz.     

一种用于流水线ADC的高增益高带宽放大器

介绍了一种适用于高速高精度流水线模数转换器(ADC)的放大器.该放大器使用了增益提升技术,具有高增益、高单位增益带宽的特点,能满足高速高精度ADC对放大器的性能要求.该放大器采用1.8 V 1P6M 0.18 μm CMOS工艺实现,仿真表明直流增益为100 dB,单位增益频率为1.2 GHz(负载电容1.5 pF),功耗16 mW.将该放大器用于10位100 MS/s转换速率的流水线ADC,测试结果表明该放大器性能达到设计要求.     

一种嵌入式低功耗高精度带隙基准的设计

提出了一种自偏置,共源共栅(Cascode)结构的标准CMOS带隙基准电路,未使用运算放大器,占用面积小,功耗低,有利于集成到低功耗电路系统.采用新颖的Power On Reset 电路解决了自偏置电路的启动问题.采用基极电流消除技术和基极电阻补偿技术实现高精度.在UMC 0.25 μm 3.3 V电源电压CMOS工艺条件下进行模拟验证,模拟结果表明:带隙基准输出电压为1.208 3 V,在-20～80 ℃温度范围内,温度系数为8×10-6/℃,电源抑制比(PSRR)为-65.8 dB,功耗小于200 μW,输出噪声225 nV/Hz.     

二阶误差反馈型失配误差整形16位500 kS/s SAR ADC

为了解决高精度逐次逼近型模数转换器(SAR ADC)中电容失配对精度的影响,设计了一种二阶误差反馈型失配误差整形(EFMES)16位精度、500 kS/s采样率、3.3 V工作电压的SAR ADC。采用二阶EFMES结构和动态元件匹配技术,降低了电容失配对ADC精度的影响。该EFMES SAR ADC采用SMIC 0.18 μm CMOS工艺设计。在输入信号幅度为2.6 V、采样率为500 kS/s时,该ADC的功耗为8.382 mW,SNDR为93.67 dB,ENOB为15.27位,基于SNDR的FoM为168.4 dB。     

一种高线性度CMOS混频器的设计

采用线性化技术改进的混频器结构提高了线性度.采用TSMC 0.18 μm RF CMOS模型进行了电路仿真.仿真结果:在电源电压为1.8 V时,输入三阶截断点(IIP3)为10.3 dBm,输入1dB压缩点(P-1dB)为-3.5 dBm,增益为9.2 dB,单边带噪声系数为17 dB.     

一种基于衬底驱动的亚1V轨至轨运放设计

基于衬底驱动技术,本文设计了一种亚1V Rail-to-Rail运算放大器.在差分对衬底端加信号避开低压环境MOS管阈值电压限制,运用局部正反馈技术来增加增益和带宽.在0.8 V电源电压,18pf的电容负载下用Hspice仿真,结果表明:直流增益达74.1 dB,相位裕度为62o,单位增益带宽为4.56 MHz,输出范围达2.72～782.17 mV,失调电压仅为12 μV,功耗为144.2 μW.     

一种应用于音频的可重构Σ-Δ连续时间调制器

基于180 nm CMOS工艺,设计了一种应用于音频领域的可重构前馈式3阶Σ-Δ连续时间调制器。传统Σ-Δ连续时间调制器只有一种工作模式,而该设计利用可重构的积分器使Σ-Δ连续时间调制器具有高精度和低功耗两种工作模式。此外,采用的加法器提前技术减小了调制器功耗,负电阻补偿技术提高了调制器的SNDR,额外环路延时补偿技术提高了调制器的稳定性。仿真结果表明,在20 kHz信号带宽、1.8 V电源电压下,低功耗模式下调制器的SNDR为94.7 dB,功耗为291 μW;高精度模式下调制器的SNDR为108 dB,功耗为436.6 μW。     

一种基于衬底驱动技术的超低压模拟混频器

讨论分析了混频器和衬底驱动MOSFET的工作原理.在此技术基础上设计一个低压模拟混频器.基于TSMC 0.25 μm CMOS工艺BSIM3V3模型,采用Hspice对整个电路进行仿真.仿真结果表明,该混频器在1.2V的单电源电压下,可以实现对2.4GHz正弦信号的混频,转换增益为-12.8dB,三阶输入截止点的值为23dB.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

A rigorous proof of MIMO channel capacity’s increase with antenna number

It is well known that adding more antennas at the transmitter or at the receiver may offer larger channel capacity in the multiple-input multiple-output（MIMO） communication systems. In this letter, a simple proof is presented for the fact that the channel capacity increases with an increase in the number of receiving antennas. The proof is based on the famous capacity formula of Foschini and Gans with matrix theory.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.     

Call for Papers

正Wireless Body-area Networks The last decade has witnessed the convergence of three giant worlds:electronics,computer science and telecommunications.The next decade should follow this convergence in most of our activities with the generalization of sensor networks.In particular with the progress in medicine,people live longer and the aging of population will push the development of wireless personal networks