双层悬空结构片状微电感研究

利用MEMS工艺制作了一种双层悬空结构的圆形片状微电感，并研究了其在S波段的性能。双层微电感的底层线圈制作在玻璃衬底平面上，外径为500μm，匝数为2，导线宽度70μm，导线间距15μm，顶层线圈的悬空高度为20μm，顶层线圈的匝数为1．5，其它结构参数与底层线圈相同。研究表明，所制作的双层结构微电感在2GHz～4GHz时其电感量达到2．2nH，其品质因数达到22。在制作过程中首次引入的光刻胶抛光工艺大大简化了微电感的制作过程。     

一种硅衬底镂空结构的圆形射频微电感

利用MEMS工艺以及硅的湿法刻蚀工艺制作了一种硅衬底镂空结构的圆形射频微电感，并研究了硅衬底背面减薄对射频微电感性能的影响，结果表明：微电感硅衬底经过局部刻蚀减薄后其自谐振频率上升，电感量的频率稳定性提高，而其最大Q值下降。     

新型悬空结构射频微电感的制作与测试

利用MEMS(Micro Electro-Mechanical System:微机电系统)工艺中的牺牲层技术制作了一种新型悬空结构微电感,在此悬空结构中,微电感的线圈制作在与衬底平行的平面上,线圈与衬底之间有立柱支撑;此新型微电感的制作工艺流程简单,与集成电路工艺相兼容,且其高频性能较好。并对此结构微电感的性能进行了测试,测试频率范围在0.05~10 GHz之间,结果表明:当悬空结构微电感的悬空高度为20 靘,工作频率在3~5 GHz范围内时,其电感量达到4 nH,其Q值最大可达到22。     

悬空结构射频微电感的制作研究

利用MEMS工艺中的牺牲层技术制作了一种新型悬空结构微电感，在此悬空结构中，微电感的线圈制作在与衬底平行的平面上，线圈与衬底之间有立柱支撑；此新型微电感的高频性能较好，且其制作工艺流程简单，与集成电路工艺相兼容。测量结果表明：当工作频率在2GHz～3GHz范围内时，此悬空结构微电感电感量达到4．2nH，Q值最大可达到37。     

双层螺旋RF MEMS电感的模拟与设计

分析了双层螺旋电感的等效电路模型,研究了一种与传统CMOS工艺兼容的MEMS工艺,通过腐蚀电感结构下的硅衬底使电感悬空.利用HFSS软件对一些双层螺旋微电感进行了模拟,模拟结果表明,相比传统单层电感,双层电感可以减少60%的芯片面积,10nH的电感也只需要很小的面积,经过MEMS后处理的双层螺旋电感的最大Q值都超过了20.     

RF平面螺旋微电感计算机模拟研究

应用Greenhouse法对RF平面螺旋微电感进行了计算机模拟,探明了微电感品质因数Q值在高频域内的变化规律,得出了微电感金属层厚度、线宽、线间距及线圈数与RF平面螺旋微电感Q值的对应关系。研究发现,RF平面螺旋微电感的Q值在高频域内随频率增加而呈现先升高后下降的趋势,Q值存在峰值;微电感Q值在某一频率范围内随微电感金属层厚度、线宽的增加而增大;随线间距的增加,微电感的低频性能下降而高频(>1GHz)性能升高;当微电感直径一定时,随线圈数的增加,Q值有下降的趋势。     

基于SOI衬底的射频电感优化设计

比较了SOIRF电感与体硅电感的性能 ,并根据模拟结果分析了电感中空面积 ,电感形状结构 ,金属宽度、间距对SOI电感品质因数Q、自谐振频率、电感量L的影响 ,最后提出了一种基于SOI衬底RF电感的优化设计原则 .以往射频集成电感性能的比较并不固定电感值 ,而文中全部参数的变化都是在电感值相同的情况下进行比较     

一种新型磁芯螺线管微电感的设计与优化

利用HFSS仿真软件对一种基于电感耦合的新型磁芯螺线管微电感进行设计,并优化得出其结构参数,该电感尺寸为7 mm×6.6 mm×0.44 mm。利用Agilent E4294A射频阻抗/材料分析仪对微机电系统(MEMS)工艺实现的该新型螺线管微电感进行了性能测试分析。测试结果表明：该电感在1 MHz~20 MHz频率范围内保持较高的电感值和品质因数Q,测试结果与仿真结果较好的吻合,电感值是相同几何结构参数下空心电感的16倍以上,在10 MHz频率时,微电感的电感值为1.17μH,Q值达到50。     

基于SOI衬底的射频电感优化设计

比较了SOI RF电感与体硅电感的性能,并根据模拟结果分析了电感中空面积,电感形状结构,金属宽度、间距对SOI电感品质因数Q、自谐振频率、电感量L的影响,最后提出了一种基于SOI衬底RF电感的优化设计原则.以往射频集成电感性能的比较并不固定电感值,而文中全部参数的变化都是在电感值相同的情况下进行比较.     

基于HFSS的高速不连续性微带线串扰分析

建立了高速不连续性微带线HFSS(High Frequency Simulator Structure)串扰仿真分析模型,基于该模型对不连续性微带线在高频条件下的串扰问题进行了研究,得到了其近端串扰(S13)和远端串扰(S14),分析了信号频率、微带线厚度、微带线宽度、微带线宽度微带线拐角类型、微带线间距对串扰强度的影响。结果表明：不连续性微带线串扰强度随着信号频率的变化而呈现先增大后趋于平缓的趋势;近端串扰S13随微带线厚度的增大呈现递增的趋势;近端串扰S13随微带线宽度增大而增大;微带线拐角类型为圆弧时串扰最为明显;串扰强度随微带线间距增大而减小。基于研究结果提出了抑制不连续性串扰的方法。     

Air Cavity Incorporation to LTCC Spiral Inductor for High Q-factor and SRF

We have devised a new LTCC spiral inductor incorporating an air cavity underneath for high Q-factor and high self-resonant frequency (SRF). The air cavity employed under the spiral reduces the shunt capacitance of the inductor, and results in high Q-factor and SRF of the embedded inductors. The optimized spiral inductor with the embedded air cavity shows a maximum Q of 51 and SRF of 9.1 GHz, while conventional spiral inductor has a maximum Q of 43 and SRF of 8 GHz with effective inductance of 2.7 nH.     

Fabrication and performance of a novel suspended RF spiral inductor

A novel suspended radio frequency (RF) spiral inductor was fabricated on glass substrate by using the microelectromechanical systems (MEMS) technology. The suspended spiral inductor is sustained with the T-shaped pillars. Great improvements in Q-factor have been achieved because of the separation between the substrate and the inductor. In the fabrication process, fine polishing of the photoresist is used to simplify the processes and ensure the seed layer and the pillars contact perfectly, and dry etching technique is used to remove the seed layer. The inductance and Q-factor are measured using the HP 8722D network analyzer in the frequency range of 0.05-10 GHz. The maximum quality factor of this inductor is 37 for the inductance of 4.2 nH with a suspended height of 60 /spl mu/m. Also, the relationship between the maximum quality factor and the suspended height were studied; the maximum quality factor grows gradually with the increase of the suspended height.     

Flip chip assembled MEMS inductors

High performance suspended MEMS inductors produced using a flip chip assembly approach are described. An inductor structure is fabricated on a carrier and then flip chip assembled onto a substrate to form a suspended inductor for RF-IC applications with significant improvement in Q-factor and frequency of operation over the conventional IC inductors. A spiral MEMS inductor has been successfully produced on a silicon substrate with an air gap of 26 /spl mu/m between the inductor structure and the substrate. The inductance of the device was measured to be /spl sim/2 nH and a maximum Q-factor of 19 at /spl sim/2.5 GHz was obtained after pad/connector de-embedding.     

Experimental analysis of the effect of metal thickness on the quality factor in integrated spiral inductors for RF ICs

The effect of metal thickness on the quality (Q-) factor of the integrated spiral inductor is investigated in this paper. The inductors with metal thicknesses of 5/spl sim/22.5 /spl mu/m were fabricated on the standard silicon substrate of 1/spl sim/30 /spl Omega//spl middot/cm in resistivity by using thick-metal surface micromachining technology. The fabricated inductors were measured at GHz ranges to extract their major parameters (Q-factor, inductance, and resistance). From the experimental analysis assisted by FEM simulation, we first reported that the metal thickness' effect on the Q-factor strongly depends on the innermost turn diameter of the spiral inductor, so that it is possible to improve Q-factors further by increasing the metal thickness beyond 10 /spl mu/m.     

Surface micromachined solenoid on-Si and on-glass inductors for RFapplications

RF performance of surface micromachined solenoid on-chip inductors fabricated on a standard silicon substrate (10 Ω·cm) has been investigated and the results are compared with the same inductors on glass. The solenoid inductor on Si with a 15-μm thick insulating layer achieves peak quality (Q-) factor of 16.7 at 2.4 GHz with inductance of 2.67 nH. This peak Q-factor is about two-thirds of that of the same inductor fabricated on glass. The highest performance has been obtained from the narrowest-pitched on-glass inductor, which shows inductance of 2.3 nH, peak Q-factor of 25.1 at 8.4 GHz, and spatial inductance density of 30 nH/mm². Both on-Si and on-glass inductors have been modeled by lumped circuits, and the geometrical dependence of the inductance and Q-factor have been investigated as well     

Fabrication and performance of novel RF spiral inductors on silicon

This paper presents and discusses the fabrication and the performance of RF circular spiral inductors on silicon. The substrate materials underneath the inductor coil are removed by wet etching process. In the fabrication process, fine polishing of the photoresist is used to simplify the processes and ensure the seed layer and the pillars contact perfectly, and dry etching technique is used to remove the seed layer. The results show that Q-factor of the novel inductor is greatly improved by removing the silicon underneath the inductor coil. The spiral inductor for line width of 50 μm has a peak Q-factor of 17 at frequency of 1 GHz. The inductance is about 3.2 nH in the frequency range of 0.05-3 GHz and the resonance frequency of the inductors is about 6 GHz. If the strip is widened to 80 μm, the peak Q-factor of the inductor reduces to about 10 and the inductance is 1.5 nH in the same frequency range.     

采用MEMS技术制作的螺线管电感

采用微机电系统技术制作了螺线管电感.为了获得高电感量和Q值,采用UV-LIGA、干法刻蚀、抛光和电镀技术,研制的电感大小为1500μm×900μm×70μm,线圈匝数为41匝,宽度为20μm,线圈之间的间隙为20μm,高深宽比为3.5:1.测试结果表明电感量最大值为6.17nH,Q值约为6.     

MEMS磁芯螺线管微电感的制作工艺研究

采用微机电系统(MEMS)技术制作了磁芯螺线管微电感,该技术包括UV-LIGA、干法刻蚀技术、抛光和电镀技术等。研制的微电感大小为1500μm×900μm×100μm,线圈匝数为41匝,宽度为20μm,线圈之间的间隙为20μm,高深宽比为5∶1。测试结果表明:在1～10MHz频率下,其电感量为0.408～0.326μH,Q值为1.6～4.2。     

Packaging-compatible high Q microinductors and microfilters forwireless applications

To meet requirements in mobile communication and microwave integrated circuits, miniaturization of the inductive components that many of these systems require is of key importance. At present, active circuitry is used which simulates inductor performance and which has high Q-factor and inductance; however, such circuitry has higher power consumption and higher potential for noise injection than passive inductive components. An alternate approach is to fabricate integrated inductors, in which lithographic techniques are used to pattern an inductor directly on a substrate or a chip. However, integrated inductors can suffer from low Q-factor and high parasitic effects due to substrate proximity. To expand the range of applicability of integrated microinductors at high frequency, their electrical characteristics, especially quality factor, should be improved. In this work, integrated spiral microinductors suspended (approximately 60 μm) above the substrate using surface micromachining techniques to reduce the undesirable effect of substrate proximity on the inductor performance are investigated. The fabricated inductors have inductances ranging from 15-40 nH and Q-factors ranging from 40-50 at frequencies of 0.9-2.5 GHz. Microfilters based on these inductors are also investigated by combining these inductors with integrated polymer filled composite capacitors     

Experimental Characterization of On-Chip Single and Double-Coupling Spiral Inductors

Experimental investigations on on-chip single and double-coupling square spiral inductors on silicon substrate are performed. For each pair of double-coupling inductors, they have the same edge distance, but with different turn numbers. Based on the measured S-parameters using de-embedding procedure, the inductance and Q-factor of the single square inductor are examined at first, and good agreement is obtained in the extracted inductance, compared to the predicted values using a closed-form series inductance equation. While for double-coupling spiral inductors, the smaller the product of two turn numbers, the weaker coupling will be, and in particular at low frequencies.