Topotactically Oriented α-Si3N4 Cores in Sintered β-Si3N4

α-Si₃N₄ core structures within β-Si₃N₄ grains have been studied by transmission electron microscopy. The grains were dispersed in an oxynitride glass which was previously melted at 1600°C. The cores were topotactically related to the as-grown β-Si₃N₄ crystallites and are related to epitactical nucleation during heat treatment as the most probable mechanism.     

Mechanochemical-Activation-Assisted Combustion Synthesis of α-Si3N4

Combustion synthesis (CS) of α-silicon nitride (Si₃N₄) powders was accomplished at a nitrogen pressure lower than 3 MPa. The combination of mechanical activation and chemical stimulation was effective in enhancing the reactivity of Si powder reactants, which was responsible for the reduction of the minimum nitrogen pressure normally required for the CS of Si₃N₄. This breakthrough indicates that nitriding combustion of silicon in pressurized nitrogen could be promoted by activating the solid reactants instead of by increasing the nitrogen pressure. The phase content of α-Si₃N₄ in the as-synthesized product is over 90 wt%. Scanning electronic microscopy observation showed that the combustion-synthesized Si₃N₄ powders are submicron-sized particles with spherical morphologies.     

Nucleation and Growth of α'-SiAlON on α-Si3N4

Morphology, composition, and growth defects of α'-SiAION have been studied in a fine-grained material with an overall composition Y_0.33Si₁₀Al₂O₁N₁₅ prepared from α-Si₃N₄, AlN, Al₂O₃, and Y₂O₃ powders. TEM analysis has shown that fully grown α'-SiAloN grains always contain an α-Si₃N₄ core, implicating heterogeneous nucleation operating in the present system. The growth mode is epitaxial, despite the composition and lattice parameter difference between α-Si₃N₄ and α'-SiAlON. The inversion boundary that separates two domains in the seed crystal is seen to continue in the grown α'-SiAION. Lacking a special growth habit, the growth typically proceeds from more than one site on the seed crystal, and the different growth fronts impinge on each other to give an equiaxed appearance of α'-SiAlON. Misfit dislocations on the α/α'interface are identified as [0001] type ( b = 5.62 Å) and 1/3 [1 2 10] type ( b = 7.75 Å). These nucleation and growth characteristics dictate that microstructural control of α'-SiAlON must rest on the size distribution of the starting α-Si₃N₄ powder.     

Microstructure and Mechanical Properties of the in situβ-Si3N4/α'-SiAlON Composite

The in situ β-Si₃N₄/α'-SiAlON composite was studied along the Si₃N₄–Y₂O₃: 9 AlN composition line. This two phase composite was fully densified at 1780°C by hot pressing Densification curves and phase developments of the β-Si₃N₄/α'-SiAlON composite were found to vary with composition. Because of the cooperative formation of α'-Si AlON and β-Si₃N₄ during its phase development, this composite had equiaxed α'-SiAlON (∼0.2 μm) and elongated β-Si₃N₄ fine grains. The optimum mechanical properties of this two-phase composite were in the sample with 30–40%α', which had a flexural strength of 1100 MPa at 25°C 800 MPa at 1400°C in air, and a fracture toughness 6 Mpa·m^1/2. α'-SiAlON grains were equiaxed under a sintering condition at 1780°C or lower temperatures. Morphologies of the α°-SiAlON grains were affected by the sintering conditions.     

Mechanical Properties of β-Si3N4-Whisker/Si3N4-Matrix Composites

Composites containing 30 vol%β-Si₃N₄ whiskers in a Si₃N₄ matrix were fabricated by hot-pressing. The composites exhibited fracture toughness values between 7.6 and 8.6 MPa · m^1/2, compared to 4.0 MPa · m^1/2 for unreinforced polycrystalline Si₃N₄. The improvements in fracture toughness were attributed to crack wake effects, i.e., whisker bridging and pullout mechanisms.     

Effect of α-Si3N4 Particle Size on the Microstructural Evolution of Si3N4 Ceramics

The effects of initial particle size on the microstructure of silicon nitride ceramics produced by pressureless sintering have been investigated. The microstructures of the silicon nitride ceramics varied considerably with the size of the initial powder. With decreasing powder size, abnormal grain growth was enhanced, which resulted in significant bimodal distribution of grain size. The observed results are discussed in relation to the two-dimensional nucleation and growth theory for faceted crystals.     

Quantitative Microscopy of β-Si3N4 Ceramics

The three-dimensional grain size distribution in an experimental β-Si₃N₄ material has been determined using the hexagonal prism as a model of β-Si₃N₄ grain shape. Results from quantitative microscopy of polished and etched sections were compared with computer-generated two-dimensional stereological parameters of hexagonal prisms with different aspect ratios in order to determine an average grain shape (i.e., aspect ratio) in the microstructure. Section parameter distributions for the average grain shape were obtained from the computer simulations and used in a three-dimensional reconstruction of the microstructure. The results showed that this Si₃N₄ ceramic had the postulated fibrous microstructure and a broad grain size distribution.     

Ultra-Long Single-Crystalline α-Si3N4 Nanowires: Derived from a Polymeric Precursor

Single-crystalline α-Si₃N₄ nanowires were synthesized by thermal decomposition of a polysilazane preceramic polymer using FeCl₂ powders as catalyst. The nanowires, which are 20–40 nm in diameter and up to several mm in length, possess smooth surfaces and uniform diameters along the entire length and contain no detectable structural defects such as dislocation or stacking faults. The study also revealed that all nanowires grow along [100] direction. The growth of the nanowires is attributed to a novel solid–liquid–gas–solid reaction/crystallization process. The mechanism that governs the formation of nanowires rather than nanobelts is discussed.     

Local Chemical Bonding around Rare-Earth Ions in α- and ß-Si3N4

First-principles molecular-orbital calculations of α- and ß-Si₃N₄ with a trivalent lanthanide (Ln³⁺) ion at the interstitial site are conducted using model clusters that are composed of 41-43 atoms, neglecting lattice relaxation effects. When an interstitial Ln³⁺ ion is present, strong antibonding between the Ln³⁺ ion and Si₃N₄ is found. The magnitude of the antibonding is almost the same between the alpha- and ß-Si₃N₄ matrices. On the other hand, the Si-N bond around the Ln³⁺ ion is notably reinforced in alpha-Si₃N₄ but not so much in ß-Si₃N₄. The different electronic response to the presence of the Ln³⁺ ion for the Si-N bond is concluded to be the origin of the different solubilities of interstitial Ln³⁺ ions between alpha- and ß-SiAlONs that are reported experimentally. The contribution of the electric field that is induced by the presence of a trivalent charge at the interstitial site is examined in detail; we have found that the Si-N bond strength is not simply determined by the electric field but rather in a more complex manner.     

Pressureless Sintering of α-Si3N4 Porous Ceramics Using a H3PO4 Pore-Forming Agent

A new method for preparing high bending strength porous silicon nitride (Si₃N₄) ceramics with controlled porosity has been developed by using pressureless sintering techniques and phosphoric acid (H₃PO₄) as the pore-forming agent. The fabrication process is described in detail and the sintering mechanism of porous ceramics is analyzed by the X-ray diffraction method and thermal analysis. The microstructure and mechanical properties of the porous Si₃N₄ ceramics are investigated, as a function of the content of H₃PO₄. The resultant high porous Si₃N₄ ceramics sintered at 1000°–1200°C show a fine porous structure and a relative high bending strength. The porous structure is caused mainly by the volatilization of the H₃PO₄ and by the continous reaction of SiP₂O₇ binder, which could bond on to the Si₃N₄ grains. Porous Si₃N₄ ceramics with a porosity of 42%–63%, the bending strength of 50–120 MPa are obtained.     

Synthesis of β-Si3N4 by Chemical Vapor Deposition

Beta-type CVD-Si₃N₄ plates (up to 1.1 mm thick) have been prepared by adding TiCl₄ vapor to the system SiCl₄-NH₃-H₂ at deposition temperatures of 1350° to 1450°C, while α-type or amorphous CVD-Si₃N₄ was obtained without TiCl₄ vapor at the same deposition temperature. Three to four wt % 777V was included in the β-type CVD-Si₃N₄ matrix. The density, preferred orientation, and lattice parameters of β-type CVD-Si₃N₄ were examined.     

Fabrication of Hard and Strong α/β-Si3N4 Composites With MgSiN2 as Addivitives

α/β-Si₃N₄ composites with various α/β phase ratios were prepared by hot pressing at 1600°–1650°C with MgSiN₂ as sintering additives. An excellent combination of mechanical properties (Vickers indentation hardness of 23.1 GPa, fracture strength of about 1000MPa, and toughness of 6.3 MPa·m^1/2) could be obtained. Compared with conventional Si₃N₄-based ceramics, this new material has obvious advantages. It is as hard as typical in-situ-reinforced α-Sialon, but much stronger than the latter (700 MPa). It has comparable fracture strength and toughness, but is much harder than β-Si₃N₄ ceramics (16 GPa). The microstructures and mechanical properties can be tailored by choosing the additive and controlling the heating schedule.     

Calculation of Grain-Boundary Bonding in Rare-Earth-Doped β-Si3N4

First-principles molecular orbital calculations are performed by the discrete variational Xalpha method using model clusters of rare-earth-doped β-Si₃N₄ and the interface between prismatic planes of β-Si₃N₄ and intergranular glassy films. On the basis of the total overlap population of each cluster, the rare-earth ions are implied to be stable in the grain-boundary model, while they are not stable in the bulk model. These results are consistent with experimental observations showing significant segregation of Ln³⁺ ions at the grain boundary and no solubility of Ln³⁺ into bulk β-Si₃N₄. Grain-boundary bonding is weakened with an increase of the ionic radius of the rare-earth ions, which provides a reasonable explanation for the ionic size dependence of the crack propagation behaviors as well as the growth rate of the prismatic plane in the rare-earth-doped β-Si₃N₄ during liquid-phase sintering.     

Formation of α-Si3N4 Solid Solutions in the System Si3N4-A1N-Y2O3

The subsolidus phase diagram of the quasiternary system Si₃N₄-AlN-Y₂O₃ was established. In this system α-Si₃N₄ forms a solid solution with 0.1Y₂O₃: 0.9 AIN. The solubility limits are represented by Y_0.33Si_10.5Al_1.5O_0.5N_15.5 and Y_0.67Si₉A1₃ON₁₅. At 1700°C an equilibrium exists between β-Si₃N₄ and this solid solution.     

Low-Pressure Chemical Vapor Deposition of α-Si3N4 from SiF4 and NH3: Kinetic Characteristics

Deposition of α-Si₃N₄ from SiF₄ and NH₃ was systematically studied using an axisymmetric, vertical hot-wall reactor in the temperature range of 1340° to 1490°C. The relationship between process variables and deposition behavior was identified. The deposition process was most strongly influenced by temperature. In general, deposition rate increased exponentially with increased deposition temperature, although reagent depletion in the axial direction caused a rapid decrease in the deposition rate. The deposition rate increased moderately with increased flow rate or decreased NH₃/SiF₄ molar ratio. The decomposition characteristic of pure NH₃ and SiF₄ were studied utilizing mass spectroscopy and compared to thermodynamic predictions in order to assess their influences on the Si₃N₄ deposition process. Finally, the crystallography of Si₃N₄ deposits was correlated as a function of temperature and deposition rate.     

Effects of SiF4 and NH3 Concentrations on the Low-Pressure CVD of Polycrystalline α-Si3N4

The effects of SiF₄ and NH₄ concentrations on the growth rate of polycrystalline α-Si₃N₄ were examined in the pressure range of 1.5 to 10.0 torr (1 torr ∽ 1.33 × 10² Pa). At low SiF₄ partial pressures, the growth rate increased almost linearly with the SiF₄ partial pressure. The relationship appeared to become zeroth-order at high SiF₄ partial pressures. Under excess NH₃ conditions, the growth rate was not significantly affected in any consistent manner by changes in the NH₃ partial pressure. A surface kinetic rate mechanism which qualitatively described the observed deposition behavior was postulated and discussed.     

Formation of β-Si3N4 Coatings by Chemical Vapor Deposition

BetaSi₃N₄ coatings were obtained by chemical vapor deposition in a fused-silica reaction tube by outside heating of the system SiCl₄-NH₃-N₂ at a deposition temperature (reaction tube temperature) of 1300°C, whereas α- and α+β-phase coatings were obtained at depositon temperatures of 1150° and 1250°C, respecively. Formation of β-phase coatings at relatively low temperatures is explained in terms of the effect of a catalytic impurity, SiO vapor from the reaction tube. The X-ray diffraction patterns and sulface morphologies of the coatings were studied.     

Dissolution Kinetics of β-Si3N4 in an Mg-Si-O-N Glass

The rate of dissolution of β-Si₃N₄ into an Mg-Si-O-N glass was measured by working with a composition in the ternary system Si₃N₄-SiO₂-MgO such that Si₂N₂O rather than β-Si₃N₄ was the equilibrium phase. Dissolution was driven by the chemical reaction Si₃N₄(c)+SiO₂( l )→Si₂N₂O(c). Analysis of the kinetic data, in view of the morphology of the dissolving phase (Si₃N₄) and the precipitating phase (Si₂N₂O), led to the conclusion that the dissolution rate was controlled by reaction at the crystal/glass interface of the Si₃N₄, crystals. The process appears to have a fairly constant activation energy, equal to 621 ±40 kJ-mol⁻¹, at T=1573 to 1723 K. This large activation energy is believed to reflect the sum of two quantities: the heat of solution of β-Si₃N₄ hi the glass and the activation enthalpy for jumps of the slower-moving species across the crystal/glass interface. The data reported should be useful for interpreting creep and densification experiments with MgO-fluxed Si₃N₄.     

Low-Pressure Chemical Vapor Deposition of α-Si3N4 from SiF4 and NH3: Nucleation and Growth Characteristics

The crystal structure and surface morphology of Si₃N₄ prepared by LPCVD were characterized as a function of processing conditions. Temperature was the most dominant variable which affected the coating microstructure. Strongly faceted crystalline Si₃N₄ was deposited at temperatures above ∼ 1410°C. In the temperature range of 1300° to 1410°C, crystalline and amorphous phases were codeposited. The content of the crystalline phase rapidly decreased with decreased temperature. In this temperature range, the coating crystallinity was also influenced by kinetic factors such as deposition rate and reagent depletion. For example, Si₃N₄ became more crystalline as the deposition rate was decreased by either decreasing the flow rate or increasing the NH₃/SiF₄ molar ratio. At ∼ 1300°C, the coating surface appeared fully botryoidal, and the coatings were mostly amorphous. Changes in the orientation and size of Si₃N₄ crystallites were parametrically documented. As the temperature was increased, the Si₃N₄ grains generally became more preferentially oriented to the (102) and/or ( l 0 l ) where l = 1,2,3,., directions. The average facet size increased with coating thickness.