城域网EPON承载IP基站回传的研究

随着3G移动互联网业务的发展,移动网络基站接口逐步呈现高速化、IP化趋势,在传统SDH网络无法满足基站承载需求的情况下,利用IP无线接入网（IPRAN）来实现3G移动基站承载已经成为技术演进方向。从节省网络投资成本及考虑到SDH网络现状等因素提出了利用城域网MPLS VPN及以太无源光网络接入技术来实现基站语音及数据业务的回传,探讨了基站回传组网中的各种安全保护技术,并通过现网测试验证了EPON接入技术承载基站回传业务的可行性。     

TD-LTE小基站回传承载方案

TD-LTE小基站的部署场景、覆盖策略与传统宏基站不同,站址的规划也与宏基站有较大区别,采用传统宏基站PTN回传网络承载TD-LTE小基站将面临三大难题:网络效能低、安全性差、智能性低.对如何建设高效、安全、智能的小基站回传网络进行了研究,结合中国移动网络现状,提出PON+CMNet、PTN+CMNet、PON+PTN 、PTN端到端4种小基站回传承载方案,并对这4种方案进行了现网测试验证.验证表明,4种承载方案均满足小基站通信业务需求,采用PON+CMNet承载方案在安全性、智能性、高效性上优于另外3种承载方案.     

浅谈IP RAN组网方案

为满足大带宽保障、高品质承载、多点化服务的接入需求,适应未来LTE阶段基站回传等多种业务的承载需求。可满足多种业务承载需求的IP RAN适时出现了。文章从3G和LTE承载需求的角度出发,依托城域骨干网,简要阐述了IP RAN组网方案,并且描述了IP RAN组网各类设备的设置原则以及组网要求。     

PON承载LTE小基站回传业务研究

研究了LTE小基站回传的技术需求,综合考虑成本、技术能力、工程实施难度等因素,研究PON承载LTE小基站回传业务的可行性和必要性,介绍了PON承载LTE小基站回传业务的关键技术及其实现。最后,基于调研和实验室测试的相关结果,介绍了国内外相关的标准化进展和设备成熟度。     

PON承载移动回传的应用场景及部署方案研究

伴随着移动互联网的高速发展,运营商正面临着移动基站回传的难题.将PON用于移动回传的承载具备诸多优点,梳理PON承载移动回传的应用场景、技术要求以及存在的关键问题.同时还在中国联通的现网建设试验局点,并通过实验室和外场测试验证其可行性.     

WCDMA网基站业务承载方式探讨

文章分析了WCDMA基站业务承载的背景及现有传输网存在的问题,提出了在分组传送网建成之前,采用基站侧加以太网交换机的方案来满足3G承载需求,并对具体方案进行了详细的阐述。     

无线Mesh自组网在应急通信基站回传中的应用探讨

随着移动通信网络技术的发展,应急通信中的移动基站类型、业务内容、应用场景也发生了很大变化,传统应急通信基站的回传手段已难以满足新业务的性能需求。文章将介绍无线Mesh自组网技术及其特点,结合测试分析和实际应用,提出基于无线Mesh自组网的无线回传方案。     

面向全业务运营的城域网建设

1 全业务运营对城域网的需求 如何满足全业务运营的需求是运营商在城域网建设中需考虑的主要问题,也是电信界近年来工作的主题之一.全业务运营要求包括城域网在内的承载网具备全业务承载和管理能力,目标架构是从骨干网到城域网端到端IP化.     

基于IPRAN的移动基站综合承载方案

随着国内4G发牌及建设的逐步启动,LTE基站大带宽回传是网络建设重点与基础;本文结合IPRAN技术及4G建网特点,分析了LTE及CDMA承载的流量、同步、组网需求,探讨了IPRAN组网、C网IP化改造方案;为搭建2G、3G、4G共承载的综合IPRAN网络提供方案建议,以实现快速部署LTE回传网络。     

浅析当前4G时代基站回传承载网协调组网

随着移动互联时代的到来,我国不同领域的通信技术也不断融合,而且在应用与发展过程中加强了技术渗透.特别是4G时代的来临,加速了我国移动网络通信发展的步伐.而承载网作为我国电信网络的技术基础,其主要功能就是实现网络支撑业务的演进和发展.在我国网络管理规划过程中,基站回传承载网的主要建设模式分为需求现状分析以及网络规划目标制定、网络运行管理与预测及网络实施和具体规划,从而最终经过指标分析评估制定科学的基站回传承载网协调组网方案.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.