退火处理对Cu、CuNi薄膜及其热电偶电性能的影响

采用磁控溅射法在单晶硅片基底上制备多个Cu薄膜和CuNi薄膜,对其进行退火处理,分析不同退火温度对薄膜电阻率的影响。结果显示,随着退火温度的升高,两种薄膜的电阻率逐渐减小,且Cu薄膜的电阻率变化较CuNi薄膜更为明显。在镀有SiO2绝缘膜的硅片基底上制备T型(Cu/CuNi)薄膜热电偶,并进行退火处理,对退火前后的热电偶进行静态标定。实验数据表明,T型薄膜热电偶经过退火处理后,灵敏度由退火前38.35μV/℃增大到44.10μV/℃。     

T型薄膜热电偶灵敏度与薄膜电阻率的关系

在优化薄膜制备工艺的基础上,通过实验对Cu、CuNi薄膜的电阻率与T型薄膜热电偶(TFTC)灵敏度之间的关系进行了研究。首先,通过设计正交试验,以Cu、CuNi薄膜电阻率为考察指标,得到了影响电阻率的主次因素以及各工艺参数对薄膜电阻率的影响规律。然后根据实验结果确定工艺参数条件,制备出了薄膜电阻率不同的3个T型薄膜热电偶,并对其灵敏度进行了实验标定。标定结果表明:T型薄膜热电偶的薄膜电阻率越小,其灵敏度越大。     

金属基NiCr-NiSi薄膜热电偶的制备及性能研究

采用电子束蒸发和磁控溅射法在Ni基超合金基片上制备NiCr-NiSi薄膜热电偶,薄膜热电偶依次由Ni基超合金基片、NiCrAlY过渡层、Al2O3热氧化层、氧化铝绝缘层、NiCr-NiSi薄膜热电偶层以及氧化铝保护层构成。对此薄膜热电偶样品的静态标定结果表明,所制备的金属基NiCr-NiSi薄膜热电偶在25～600℃内具有良好的线性度,Seebeck(塞贝克)系数达到37.5μV/K,略低于K型标准热电偶的塞贝克系数40.0μV/K。     

Ba_(0.5)Sr_(0.5)TiO_3薄膜电容的尺寸效应研究

采用射频磁控溅射和微细加工技术制备了不同尺寸的钛酸锶钡(Ba0.5Sr0.5TiO3,BST)平行板电容,研究了低频和高频条件下不同尺寸BST平行板电容的电容密度和Q值的变化情况。结果表明,由于存在边缘效应,BST薄膜电容的电容密度及Q值都具有尺寸效应。低频时,随着电容面积增大,电容密度减小,Q值增大。高频时,随着电容面积增大,电容密度及Q值减小。     

双势垒量子阱薄膜压阻效应实验研究

采用分子束外延方法在砷化镓衬底上生长了AlAs/GaAs双势垒量子阱薄膜结构。介绍了量子阱薄膜在单轴压力作用下的压阻实验,测试出薄膜在压力影响下的I-V曲线,并分析了量子阱薄膜压阻效应的成因。通过实验证实了量子阱薄膜具有较高灵敏度的压阻效应,其压阻灵敏度比目前常用的多晶硅的压阻灵敏度提高一个数量级。     

准矩形激光脉冲对薄膜热电偶传感器响应时间的测量

本文从时域观点分析了测量热辐射传感器瞬态响应时间的近似条件，并以准矩形激光脉冲作为热源实验测量了微秒级薄膜温度传感器的响应时间，最后对毫微秒级快速响应温度传感器提出了测定其瞬态响应的可行性方案。     

压电薄膜振动传感器灵敏度与频响标定研究

近年来,压电薄膜振动传感器发展十分迅速,已被广泛应用于结构健康监测、医疗电子、加速度、器件振动等测量。该文针对压电薄膜振动传感器的性能检测,设计了一套以可调频激振台作为核心的压电传感器灵敏度与频响特性标定装置。振动信号由可调频激振台提供,标准压电传感器与自制传感器同步进行振动测试。测试结果表明,该装置可方便地实现对被测传感器灵敏度和频率响应特性的标定。标定系统整体设计简单,操作方便。同时系统体积小,稳定性高,测量误差小,便于对各种类型的压电振动传感器进行检测,具有很强的实用性和广阔的发展空间。基于该系统对自制压电薄膜传感器性能的标定,研究了压电薄膜传感器灵敏度的影响因素。     

激光扫描制备大尺寸超导薄膜的理论分析

提出了利用激光扫描剥离靶材,沉积膜厚分布均匀的大尺寸高温超导薄膜分析模型。利用这模型取得的结果表明:激光扫描方法沉积的薄膜厚度分布依赖于激光扫描半径、靶面与基片的间距。对于一定均匀性程度要求的薄膜,存在一个能获得最大尺寸薄膜的最佳激光扫描半径。实验结果与理论分析基本一致。     

磁控溅射生长Cu/Si薄膜

用溅射方法在Si(111)上生长Cu/Si,Ti/Si,Cu/Ti/Si薄膜。用XRD,红外吸收光谱,台阶仪对薄膜进行分析和测量。结果表明:在150℃溅射生长出的Cu/Ti/Si薄膜的缓冲层为硅化物TiSi2(311);Cu薄膜的主要成分是晶粒大小为17nm的Cu(111);Cu/Ti/Si(111)平均厚度为462nm,粗糙度为薄膜厚度的3%。在以TiSi2薄膜为缓冲层的Si(111)衬底上生长出的Cu薄膜抗氧化性较强、薄膜均匀性和致密性较好。     

基于双热电偶校准ECR-PEMOCVD薄膜生长温度分析研究

通过简单叙述Ⅲ族GaN基氮化物薄膜,以及了解半导体薄膜生长系统的温度变化情况重要性,提出了基于双热电偶校准薄膜生长装置ECR-PEMOCVD温度的方法.试验表明,置放样品的托盘温度(薄膜的生长的真实温度)与生长环境温度(设定温度)是不一样的,两者的差异甚至很大.最后讨论了在经过校温的系统上进行蓝宝石衬底的氢氮等离子体清洗实验,并通过RHEED图像评价清洗结果质量.     

石墨烯/CdTe肖特基结柔性薄膜太阳能电池研究

利用Matlab仿真模拟了石墨烯/P-CdTe肖特基结太阳能电池的光电特性。结果表明,电池的短路电流密度Jsc为23.9×10–3A/cm2、开路电压Voc为0.64 V、填充因子FF为79.0,转换效率η高达12%。与传统的氧化铟锡(ITO)电极比较,石墨烯柔韧性好,同时具备高透光和高导电的特性,可替代ITO作为新型电极材料来制备柔性薄膜太阳能电池。     

基于闭合磁路的框式薄膜电感的研究

通过磁控溅射工艺制备出三种框式薄膜电感,其中特殊磁芯电感、全磁膜电感为设计制作的具有闭合磁性回路的特殊薄膜电感,而三文治结构电感是目前流行的薄膜电感,这些电感均由下层磁芯层、下层绝缘层(聚偏二氯乙烯,厚度约为40μm)、线圈和线圈中心的磁膜、上层绝缘层和上层磁芯层组成,其差别在于磁芯结构不同。在1~3 MHz频率范围内,比较了三种电感的等效电感、寄生电容和损耗因子。结果表明:与三文治结构电感和全磁膜电感相比,特殊磁芯电感有较高的等效电感量和较小的寄生电容,但损耗较后两者高。     

Performance improvement mechanisms of organic thin-film transistors using MoOx-doped pentacene as channel layer

Organic thin-film transistors (OTFTs) with various MoO_x-doped pentacene channel layers were fabricated and investigated. Compared the OTFTs with the 0.50 mol% MoO_x-doped pentacene to the conventional OTFTs without MoO_x dopant, the maximum output current was increased from −11.6 to −37.9 μA, the effective field-effect mobility was enhanced from 0.71 to 1.60 cm²/V-s, the threshold voltage was reduced from −21.2 to −14.8 V, and the on/off current ratio slightly decreased from 3.6 × 10⁶ to 1.2 × 10⁶. The performance improvement was attributed to the highest occupied molecular orbital (HOMO) of the MoO_x-doped pentacene gradually approached to the Au work function with increasing the doping percentage of MoO_x, which led to reduce the contact resistance and to enhance the p-type characteristics of the MoO_x-doped OTFTs by increasing the hole density and enhancing the hole-injection efficiency. However, the output current and the field-effect mobility decreased with an increase of the MoO_x doping percentage, if the doping mole percentage of MoO_x was higher than 0.50%. This behavior was attributed to the Fermi level pinning effect, gradual increase of hole concentration and significant degradation of crystallinity.     

基于热电偶的睡眠呼吸监测传感器的仿真与分析

针对阻塞性睡眠呼吸暂停综合症(OSAHS)这一常见疾病,本文设计了一种基于薄膜热电偶的睡眠呼吸监测传感器,并通过赛贝克效应和传热学原理分析了呼吸过程中温度以及对流换热系数的变化,为传感器呼吸监测能力的可行性提供了理论依据.本文采用COMSOL进行了有限元仿真,研究了基底厚度、热电偶材料、热电偶厚度以及导线排布方式对传感...     

基于K型热电偶的电阻炉温控系统设计

电阻炉温度的检测和控制直接与能耗、生产效率、产品质量、安全生产等重大技术指标相关联.为了能快速、准确检测与控制电阻炉的温度,系统采用K型热电偶和MAX6675作为温度采集模块,以单片机SI℃89C52为核心,设计了一种基于K型热电偶电阻炉温度检测控制系统,包括系统的硬件电路与软件系统.经实验测试,系统控制精度达到0.5℃,且性能稳定,使用简便,符合设计的预期要求.     

Study of electron-scattering mechanism in nanoscale Cu interconnects

This paper presents a study of electron scattering in damascene-processed Cu interconnects. To understand the leading electron-scattering mechanism responsible for the size effect, Cu interconnects with varying physical widths, 80–750 nm, were made, and their resistivity characterized as a function of temperature, ranging from liquid He temperature (4.2 K) to 500 K. The resulting data suggest that surface scattering, contrary to expectations, was not the primary cause of the size effect observed in this investigation. Surface scattering was found to weaken with decreasing line width. Further analysis leads to the conclusion that a substantial fraction of the size effect originates from impurity content scaling inversely with width in these samples.     

光纤光栅在不同基底上的应变灵敏度研究

为实现光纤光栅传感器对基体表面应变的准确监测,在三种不同基底上对同一个光纤光栅传感器进行标定,研究了不同基体对传感器应变传递的影响。实验表明,光纤光栅传感器选用不同的标定基底其应变灵敏度系数是不同的,实际测量时需根据不同的被测对象,选用合适的基体来标定应变灵敏度系数,这样才能真实的反应基体的应变。     

Low-voltage p-channel, n-channel and ambipolar organic thin-film transistors based on an ultrathin inorganic/polymer hybrid gate dielectric layer

A key issue in research into organic thin-film transistors (OTFTs) is low-voltage operation. In this study, we fabricated low-voltage operating (below 3V) p-channel, n-channel and ambipolar OTFTs based on pentacene or/and C₆₀ as the active layers, respectively, with an ultrathin AlO_X/poly(methyl methacrylate co glycidyl methacrylate) (P(MMA–GMA)) hybrid layer as the gate dielectric. Benefited from the enhanced crystallinity of C₆₀ layer and greatly reduced density of electron trapping states at the interface of channel/dielectric due to the insertion of ultrathin pentacene layer between C₆₀ and P(MMA–GMA), high electron mobility can be achieved in present pentacene/C₆₀ heterostructure based ambipolar OTFTs. The effect of the thickness of pentacene layer and the deposition sequence of pentacene and C₆₀ on the device performance of OTFTs was studied. The highest electron mobility of 3.50 cm²/V s and hole mobility of 0.25 cm²/V s were achieved in the ambipolar OTFT with a pentacene (3.0 nm)/C₆₀ (30 nm) heterostructure.     

Low-voltage operation of organic thin-film transistors based on ultrafine printed silver electrodes

We report the low-voltage operation of organic thin-film transistors (OTFTs) based on high-resolution printed source/drain electrodes that are produced by a surface photoreactive nanometal printing (SuPR-NaP) technique. We utilized an ultrathin layer of perfluoropolymer, Cytop, that functions not only as a gate dielectric layer in the OTFTs but also as a base layer for producing a patterned reactive surface for silver nanoparticle chemisorption in the SuPR-NaP technique. We successfully demonstrate 2 V operation with negligible hysteresis in the polycrystalline pentacene OTFT with a gate dielectric thickness of 22 nm, and we achieved current amplification by the printed electrodes modified with pentafluorobenzenethiol. The SuPR-NaP technique enables the production of high-resolution printed silver electrodes required for high-performance OTFTs, which have potential practical electronic device applications.