Design and simulation of a novel RF MEMS shunt capacitive switch with low actuation voltage and high isolation

Microsystem Technologies - This paper presents a new RF MEMS capacitive shunt switch with low voltage, low loss and high isolation for K-band applications. In this design, we have proposed the step...     

Mechanical modelling of capacitive RF MEMS shunt switches

The mechanical response of a RF MEMS shunt connected switch in coplanar waveguide configuration has been studied by using both an uni-dimensional approach based on analytical equations and a Finite Element Method (FEM) with commercial software simulations. The analytical model, developed by means of a MATHCAD program, has been used to predict the dynamics of the device, mainly taking into account its re-configuration time and the energy balance involved in the actuation and in the de-actuation mechanisms. After that, 2D and 3D simulations have been performed to get the really deformed shape of the bridge, depending on the central and lateral actuation of the suspended beam. After that, 2D and 3D simulations have been performed by a central and lateral actuation of the suspended beam to get the really deformed shape of the bridge. Theoretical and experimental results about the threshold voltage and the response time of the device confirm the validity of the proposed modeling.     

Design analysis and simulation of a digital RF MEMS varactor with high capacitive ratio

Microsystem Technologies - This work presents a variable RF MEMS capacitor based on five cantilever shunt switches for the first time. Conceptually, the proposed varactor design comprises five...     

Design and analysis of asymmetric structure capacitive RF MEMS shunt switch

Microsystem Technologies - This paper deals with the study of shunt capacitive RF switches. Comparative study is done on non-uniform designed structures, which are simulated using finite element...     

Design and simulation of RF MEMS shunt capacitive switch with non-uniform meanders for C-band applications

Microsystem Technologies - This paper presents, the design and simulation of RF MEMS shunt capacitive switch. The electromechanical and electromagnetic analysis of the switch has been done using...     

Design and simulation of capacitive SPDT RF MEMS switch to improve its isolation

Microsystem Technologies - This paper presents the simulation and analysis of capacitive shunt SPDT RF MEMS switch for high radio frequency applications. The design is based on the shunt...     

Design and performance analysis of double cantilever type capacitive shunt RF MEMS switch

This paper presents a novel structure of capacitance shunt type RF switch for 5G applications. The proposed RF MEMS switch is having Cantilever type designed with optimized dimensions to operate in V-band applications. The electromechanical analysis is done by using the COMSOL tool. The actuation voltage of the proposed switch is 10.5 V with the air gap of 1 µm and gold as a beam material. The proposed switch with the meanders and perforations show the scattering parameters in HFSS software such as insertion loss (S₁₂) of − 0.033 dB and return loss (S₁₁) less than − 48 dB and the isolation (S₂₁) calculated in off-state as − 62 dB at 50 GHz.

     

Development of a low stress RF MEMS double-cantilever shunt capacitive switch

Microsystem Technologies - In this paper, a novel RF MEMS shunt capacitive switch with application in the Ka frequency band is proposed. The spring design and the step structure added to the beam...     

Design and performance analysis of uniform meander structured RF MEMS capacitive shunt switch along with perforations

Microsystem Technologies - This paper presents design and simulation of uniform structured RF MEMS capacitive shunt switch using FEM tool and HFSS software. The switches with different shaped...     

On characterization of symmetric type capacitive RF MEMS switches

Microsystem Technologies - This paper presents the design, fabrication and characterization of capacitive type MEMS switch for space and terrestrial communication applications. The deviation in...     

Design and simulation of a novel RF MEMS shunt capacitive switch with a unique spring for Ka-band application

Microsystem Technologies - RF-MEMS switches may be divided into capacitive and metal-to-metal types in terms of type of connection. In capacitive switches in the OFF-state the beam does not attach...     

低驱动电压k波段电容耦合式RFMEMS开关的设计

设计了一种低驱动电压的电容耦合式射频微机械(RF MEMS)开关.RF MEMS开关采用共面波导传输线,双电极驱动,悬空金属膜采用弹性折叠梁支撑.使用MEMS CAD软件CoventorWare、微波CAD软件HFSS,分别仿真了开关的力学性能和电磁性能,仿真结果表明:开关的驱动电压为2.5V,满足低驱动电压的设计目标;开关开态的插入损耗约为0.23 dB@20 GHz,关态的隔离度约为18.1 dB@20 GHz.最后给出了这种RF MEMS开关的微制造工艺.     

Analysis of RF MEMS shunt capacitive switch with uniform and non-uniform meanders

Microsystem Technologies - This paper reports on electromechanical, switching time and performance analysis of capacitive shunt RF MEMS switch with uniform and non-uniform meanders. The MEMS switch...     

Effect of filter parameters on the phase noise of RF MEMS tunable filters employing shunt capacitive switches

The effect of filter parameters on the phase noise of RF MEMS tunable filters employing shunt capacitive switches is investigated in this article. It is shown that the phase noise of a tunable filter is dependent on the input power, fractional bandwidth, filter order, resonator quality factor, and tuning state. Phase noise is higher for filters with smaller fractional bandwidth. In filters with high fractional bandwidth (>3%), phase noise increases as the input power approaches the power‐handling capability of the filter. In filters with smaller bandwidths, phase noise increases with input power upto a threshold level of input power, but begins to decrease thereafter. The unloaded quality factor of the filter has a noticeable effect on the phase noise of filters with narrow bandwidths. The phase noise changes with the filter tuning state and is maximum when all the switches are in the up‐state position. It is also shown that the phase noise increases with the filter order, due to increase in the number of noisy elements in the filter structure. This article provides a methodology to evaluate the phase noise of a tunable filter and proves that RF MEMS filters are suitable for high performance applications without considerable phase‐noise penalty. © 2009 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2010.     

Design and manufacturing of X-band RF MEMS switches

Microsystem Technologies - In this article, we present the results of the design of different geometries for X-band RF MEMS switches. A number of mechanical and RF optimizations are described along...     

Design and analysis of RF MEMS shunt switch for V-band applications

Microsystem Technologies - In this paper, we have designed and simulations of RF MEMS shunt switch. The electro-mechanical and electromagnetic analysis of the switch have been done using COMSOL...     

Design and analysis of a RF MEMS shunt switch using U-shaped meanders for low actuation voltage

This paper presents the design and simulation of RF MEMS switch using uniform U-Shaped meanders. High isolation and low insertion loss are the main performance parameters enhanced by considering the inductive sections on the design and developing high capacitance using HfO₂ as a dielectric medium. The inductive sections in the design help maintain the device at resonance. The proposed uniform U-shaped meanders lower the spring constant and reduce the Pull-in-voltage of the switch. The performance characteristics are observed by simulating the proposed switch in the electromechanics environment using the COMSOL FEM tool. The switch exhibits a low Pull-in-voltage of 5.2 V with a very low switching time of 23.1 µs. Total capacitance of 42.19 fF is formed during upstate which provides a low insertion loss of less than 0.1 dB. Capacitance of 19.11 pF during downstate provides high isolation of − 42.11 dB.

     

RF MEMS悬臂梁开关的设计与仿真

利用有限元软件HFSS和ANSYS系统研究了串联MEMS开关的微波性能和力学性能与其结构参数之间的关系,并在此基础上优化出悬臂梁开关的几何结构参数,设计了RF MEMS开关,实验表明：在外施电压为10V左右时,悬臂梁的挠度可达3μm左右,5GHz时,回波损耗小于0．2dB,隔离度大于35dB。