Design of MEMS switch for RF applications

Components like passive electronically scanned (sub) arrays, T/R modules, reconfigurable antennas etc., in RF applications are in need of MEMS switches for its re-configurability and polarization. This paper presents the analysis, design and simulation of a MEMS switch. The switch proposed in this paper is intended to work in the frequency range of 4–8 GHz. The proposed switch fulfills the switching characteristics concerning the five requirements loss, linearity, high switching speed, small size/power consumption, low pull down voltage following a relatively simple design, which ensures reliability, robustness and high fabrication yield. The switch implemented in this paper is based on the integration mode of operation and widely used in RF applications.     

Design and analysis of asymmetric structure capacitive RF MEMS shunt switch

Microsystem Technologies - This paper deals with the study of shunt capacitive RF switches. Comparative study is done on non-uniform designed structures, which are simulated using finite element...     

Design and simulation of RF MEMS shunt capacitive switch with non-uniform meanders for C-band applications

Microsystem Technologies - This paper presents, the design and simulation of RF MEMS shunt capacitive switch. The electromechanical and electromagnetic analysis of the switch has been done using...     

Performance analysis of series: shunt configuration based RF MEMS switch for satellite communication applications

Microsystem Technologies - In this paper the RF-MEMS switch with series–shunt configuration on a single quartz substrate is presented to achieve high isolation than the individual series or...     

Design and analysis of SP4T RF MEMS switch for satellite applications

Microsystem Technologies - In this paper, SP4T (Single Pole four throw) type RF MEMS Switch is designed for Satellite applications. The beam thickness of the switch is varying from...     

Design and performance analysis of double cantilever type capacitive shunt RF MEMS switch

This paper presents a novel structure of capacitance shunt type RF switch for 5G applications. The proposed RF MEMS switch is having Cantilever type designed with optimized dimensions to operate in V-band applications. The electromechanical analysis is done by using the COMSOL tool. The actuation voltage of the proposed switch is 10.5 V with the air gap of 1 µm and gold as a beam material. The proposed switch with the meanders and perforations show the scattering parameters in HFSS software such as insertion loss (S₁₂) of − 0.033 dB and return loss (S₁₁) less than − 48 dB and the isolation (S₂₁) calculated in off-state as − 62 dB at 50 GHz.

     

Design and analysis of a RF MEMS shunt switch using U-shaped meanders for low actuation voltage

This paper presents the design and simulation of RF MEMS switch using uniform U-Shaped meanders. High isolation and low insertion loss are the main performance parameters enhanced by considering the inductive sections on the design and developing high capacitance using HfO₂ as a dielectric medium. The inductive sections in the design help maintain the device at resonance. The proposed uniform U-shaped meanders lower the spring constant and reduce the Pull-in-voltage of the switch. The performance characteristics are observed by simulating the proposed switch in the electromechanics environment using the COMSOL FEM tool. The switch exhibits a low Pull-in-voltage of 5.2 V with a very low switching time of 23.1 µs. Total capacitance of 42.19 fF is formed during upstate which provides a low insertion loss of less than 0.1 dB. Capacitance of 19.11 pF during downstate provides high isolation of − 42.11 dB.

     

Design of a packaging-friendly double-topology RF MEMS switch for space applications

Microsystem Technologies - This article presents the results of the research, design and a series of manufacturing steps of an RF-MEMS switch to be used in space communication systems. Design and...     

Capacitance modelling of perforated RF MEMS shunt switch

Microsystem Technologies - This paper presents the capacitance modelling of RF MEMS shunt switch by using the parallel plate, fringing field, and parasitic capacitance. The model carried out...     

Multiport RF MEMS switch for satellite payload applications

Microsystem Technologies - Design, fabrication and characterization of a novel RF switch is proposed in this paper. The multiport RF MEMS switch provides a single input multiple output novel...     

Design of a novel step structure RF MEMS switch for K-band applications

Microsystem Technologies - In this paper, we have design a proposed step structure RF MEMS switch for K-band applications. The non-uniform meander structure is implemented for both optimized and...     

Design and performance analysis of uniform meander structured RF MEMS capacitive shunt switch along with perforations

Microsystem Technologies - This paper presents design and simulation of uniform structured RF MEMS capacitive shunt switch using FEM tool and HFSS software. The switches with different shaped...     

Design and performance analysis of hybrid SPDT RF MEMS switch

Microsystem Technologies - This paper presents the design and simulation of Hybrid type RF MEMS switch for satellite communication application. The Hybrid switch beam is having non-uniform meanders...     

Design and of analysis of SPDT Ohmic RF MEMS switch

Microsystem Technologies - This paper reports on the simulation and analysis of Ohmic SPDT (single pole double throw) switch for telecommunication application. A comparative study is performed by...     

RF MEMS悬臂梁开关的设计与仿真

利用有限元软件HFSS和ANSYS系统研究了串联MEMS开关的微波性能和力学性能与其结构参数之间的关系,并在此基础上优化出悬臂梁开关的几何结构参数,设计了RF MEMS开关,实验表明：在外施电压为10V左右时,悬臂梁的挠度可达3μm左右,5GHz时,回波损耗小于0．2dB,隔离度大于35dB。     

Asymmetric RF MEMS resonant switch for high speed switching applications

Microsystem Technologies - Although micro-electro-mechanical switches are beneficial in small sizes, high levels of power handling, compatibility with CMOS process, wide bandwidth and zero power...     

Development of a low stress RF MEMS double-cantilever shunt capacitive switch

Microsystem Technologies - In this paper, a novel RF MEMS shunt capacitive switch with application in the Ka frequency band is proposed. The spring design and the step structure added to the beam...     

一种平板式MEMSRF射频开关的设计

介绍了一种实用的平板电容式MEMSRF射频开关。研究了外加驱动电压与由此所引起的极板间距和极板受力变化之间的非线性关系,提出了一种有效的基于有限元的设计分析方法,在此基础上设计了相应的MEMS加工工艺流程,并给出了具体的MEMS工艺。     

Analysis of RF MEMS shunt capacitive switch with uniform and non-uniform meanders

Microsystem Technologies - This paper reports on electromechanical, switching time and performance analysis of capacitive shunt RF MEMS switch with uniform and non-uniform meanders. The MEMS switch...     

Design and simulation of a novel RF MEMS shunt capacitive switch with a unique spring for Ka-band application

Microsystem Technologies - RF-MEMS switches may be divided into capacitive and metal-to-metal types in terms of type of connection. In capacitive switches in the OFF-state the beam does not attach...